STR-W6251D

STR-W6251D

30 W-Universal Input/45 W-230 Vac Input

PWM Switching Regulators

Features and Benefits

▪ Overcurrent protection (OCP) with ac input voltage compensation function; no additional peripheral circuits required—minimizes dependency of OCP on ac input

▪ Overload protection (OLP) with integrated timer reduces power stress (temperature rise) at overload condition, requires no peripheral components

▪ Avalanche-guaranteed MOSFET improves device capability of withstanding excess surge voltage, providing a simple surge absorber circuit without breakdown voltage derating

▪ Start-up circuit eliminates the need for a start-up resistor, and helps to reduce input power consumption

Continued on the next page…

Package: TO-220

Description

The STR-W6200D series are current-mode PWM ICs that incorporate controller chips. These devices are manufactured using a proprietary high-voltage BCD process, and avalancheguaranteed MOSFETs. These elements allow power supply systems designs that are highly reliable and simple, with fewer peripheral components. These ICs also provide Auto-Burst mode operation, which lowers input power requirements at light loads, and improves efficiency over the entire load range and universal-input range.

Applicatons include:

▪ TV set top box

▪ LCD PC monitor, LCD TV

▪ General consumer, PC, and industrial applications requiring SMPS power supply with standby mode

Not to scale

Functional Block Diagram

VCC

FM/ELP

FB

12 V

UVLO

15.5 V/ 8.9 V

PWM OSC

REG

D

MAX

75%

S Q

R

VREG

28.5 V

OVP

7.1 V

ELP

TSD

Frequency

Modulation

S2

OLP

CK

Q t

OLP t

FM

=

×32

S1

R

7.1 V

RST

R

S Q

R Q

S

OCP

7.8 V

160 μA

Feedback

Control

Slope

Compensation

STARTUP

I startup

=1.6 mA

DRV

Drain Peak

Current

Compensation

LEB

D/ST

S/OCP

GND

28103.51

STR-W6251D



Features and Benefits (continued)

▪ Bias Assist function improves start-up performance by selfbiasing the VCC pin, and allows a use of a small value VCC capacitor, resulting in improved response to overvoltage conditions

▪ Very low current consumption in nonoperating (UVLO) state:

I

CC(off)

= 5 μA (typical) at V

CC

= 13.8 V

▪ Slope compensation circuit stabilizes operation, preventing interference from subharmonics

▪ Leading Edge Blanking

• Overcurrent Protection (OCP), pulse-by-pulse sensing

• Overload Protection (OLP), auto restart after certain duration

• External Latch Protection (ELP), latched

• Overvoltage Protection (OVP), latched

• Thermal Shut Down (TSD), latched

▪ Externally-activated shut down protection (ELP) for emergency system shut down

▪ Auto-Burst Standby function (pin < 0.1 W at zero output load condition)

▪ Audible noise reducing function in Standby mode

▪ TO-220 full-molded package with 6 pins

Selection Guide

Part Number

STRW6251D

Packing

50 pieces per tube

Pin-out Diagram

Terminal List Table

Number Name

1 D/ST

Description

Drain/startup terminal

2 NC

3

4

5

6

7

S/OCP

VCC

GND

FB

FM/ELP

Clipped

Source/Overcurrent Protection terminal

Power supply terminal

Ground terminal

Feedback terminal

Frequency jittering and External

Latch Protection terminal

Functions

MOSFET drain and input of start-up signal

No connection

MOSFET source and input of overcurrent detection signal

Input of power supply for control circuit

Ground

Input of constant voltage control signal

Control input for frequency jittering control and

External Latch Protection

1 2 3 4 5 6 7

All performance characteristics given are typical values for circuit or system baseline design only and are at the nominal operating voltage and an ambient temperature, T

A

, of 25°C, unless oth er wise stated.

Allegro MicroSystems, Inc.

115 Northeast Cutoff, Box 15036

Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com

2

STR-W6251D



ABSOLUTE MAXIMUM RATINGS at T

A

= 25°C

Characteristic Symbol Terminal Note Rating

Drain Current 1

Maximum Switching Current

Single Pulse Avalanche Energy

S/OCP Terminal Voltage

FM/ELP Terminal Voltage

2

FM/ELP Terminal Inflow Current

3

I

Dpeak

I

DMAX

E

AS

I

Dpeak

V

OCP

V

FM

I

FM

V

FB

V

CC

1-3

1-3

1-3

1-3

3-5

7-5

7-5

Single Pulse

T

A

= –20 to 125°C

Single Pulse

V

DD

= 99 V, L = 20 mH

2.6

2.6

47

2

–6 to 6

–0.3 to 14

3

FB Terminal Voltage

Controller (MIC) Input Voltage

MOSFET Power Dissipation 4 P

D1

6-5

4-5

8-1

With infinite heatsink

Without heatsink

–0.3 to 9

0 to 32

25

1.3

Controller (MIC) Power Dissipation

Operating Internal Frame Temperature

Operating Ambient Temperature

Storage Temperature

Channel Junction Temperature

P

D2

T

F

T op

T stg

T

J

5-3

–

–

–

–

For Vcc×Icc

Refer to T

OP

1 Refer to figure 1

2 I

DMAX

is the drain current on the D/ST pin determined by the drive voltage of the IC and the threshold voltage, V th

, of the MOSFET

3 Refer to figure 3

4 Refer to figure 4

0.8

–20 to 115

–20 to 115

–40 to 125

150

Unit

A

A mJ

W

W

V

V

A

V

V mA

W

°C

°C

°C

°C

Figure 2 – MOSFET Safe Operating Area

Drain Current versus Voltage at T

A

= 25°C, Single Pulse

100.00

Figure 1 – MOSFET Safe Operating Area

Derating Curve

100

80

60

40

20

0

0 25 50 75 100

Temperature, T

F

(°C)

125 150

10.00

1 ms

0.1 ms

1.00

0.10

DS(on)

Current limit due to R

0.01

1

Refer to figure 1 for MOSFET SOA temperature derating coefficient

10 100

Drain-to-Source Voltage, V

DS

(V)

1000




3

STR-W6251D



Figure 3 – MOSFET Avalanche Energy Derating Curve

100

80

60

40

20

0

25 50 75 100 125

Channel Junction Temperature, T

J

(°C)

150

Figure 4 – Transient Thermal Resistance

10.00

1.00

0.10

0.01

1μ 10μ 100μ

Time, t (s)

1m 10m 100m

Figure 5 – MOSFET Power Dissipation versus Temperature

30

25

20

15

With infinite heatsink

P

D1

= 25 W at T

A

≤ 25°C

10

5

0

0

P

D1

Without heatsink

= 1.3 W at T

A

≤ 25°C

20 40 60 80 100 120 140 160

Ambient Temperature, T

A

(°C)




4

STR-W6251D



ELECTRICAL CHARACTERISTICS valid at V

CC

= 18 V, T

A

= 25°C, unless otherwise specified

Characteristic Symbol Terminal Test Conditions

Power Supply Start-up Operation

Operation Start Voltage

Operation Stop Voltage

Circuit Current in Operation

Circuit Current in Non-Oscillation

Circuit Current in Non-Operation

Start-up Current

Bias Assist Voltage

V

CC(ON)

V

CC(OFF)

I

CC(ON)

I

CC(STOP)

I

CC(OFF)

I startup

V

BIAS

4-5

4-5

4-5

4-5

4-5

4-5

4-5

(VCC voltage at which operation starts) Measurement circuit 1, V

CC

= 0 through 13.9 through 17.1 V

(VCC voltage at which operation stops) Measurement circuit 1, V

CC

= 17.1 through 9.8 to 8.0 V

(Inflow current into VCC terminal in oscillation)

Measurement circuit 1

(Inflow current into VCC terminal at V

FB

= 0 V)


(Inflow current into VCC terminal prior to oscillation)

Measurement circuit 1, V

CC

= 13.8

(Inflow current into D/ST terminal) Measurement circuit 7, V

CC

= 0, D/ST = 450 V

(VCC voltage at which I startup

starts, and I startupBias begins) Measurement circuit 7, V

CC

13.6 to 16.8 V

= 17.1 through

Normal Operating Characteristics

FM/ELP High Threshold Voltage

FM/ELP Low Threshold Voltage

FM/ELP Voltage Hysteresis

FM/ELP Outflow Current 1

FM/ELP Inflow Current 1

Average Switching Frequency

Frequency Jitter Deviation

Maximum Duty Cycle

FB Maximum Feedback Current

1

Burst Threshold Voltage

Slope Compensation Start-up

Duty Cycle

Slope Compensation Rate

V

FM(H)

V

FM(L)

V

FMhys

I

FMsrc

I

FMsink f

OSC(av)

∆f

D

MAX

I

FB(MAX)

V burst(th)

D

SLP

SLP

7-5

7-5

7-5

7-5

7-5

1-5

1-5

1-5

6-5

6-5

6-5

6-5

(FM/ELP terminal voltage at which I

FM

changes from

–13 μA to 13 μA) Measurement circuit 2

(FM/ELP terminal voltage at which I

FM

changes from

13 μA to –13 μA) Measurement circuit 2

(V

FM(H)

– V

FM(L)

) Measurement circuit 2

(FM/ELP terminal outflow current at V

FM


= V

FM(L)

)

(FM/ELP terminal inflow current at V

FM


= V

FM(H)

)

(D/ST terminal average oscillation frequency)

Measurement circuit 2 f

OSC

(peak-to-peak) Measurement circuit 2

(Maximum width of the low portion of the D/ST terminal waveform) Measurement circuit 2

(FB terminal outflow current at V

FB

= 0 V)


Set V

FM

= 0 V and decrease V

FB

(V burst(th)

is the FB terminal voltage level at which D/ST changes from low to high) Measurement circuit 3

D

SLP

= (t3 / t4) × 100 (see figure for measurement circuit 4 for values of t) Measurement circuit 4

SLP

= 0.02 / (t2 – t1) (see figure for measurement circuit 4 for values of t) Measurement circuit 4

Min.

13.9

15.5

17.1

8.0

–

–

–

–0.9

–1.6

–2.3

13.6

15.2

16.8

4.0

2.4

1.3

–17.4

–13 –8.6

8.6

60

4.8

71

–220 –160 –100

0.99

1.10

1.21

–

–22

Typ.

8.9

1.4

0.8

5

4.5

2.8

1.7

13

67

6.9

75

27

Max

9.8

2.8

1.3

20

5.0

3.2

1.9

17.4

74

9

79

–

Units

V

V mA mA

μA mA

V

V

V

V

μA

μA kHz kHz

%

μA

V

%

–17 –12 mV/μs

Continued on next page…




5

STR-W6251D



ELECTRICAL CHARACTERISTICS, continued, valid at V

CC

= 18 V, T

A

= 25°C, unless otherwise specified

Characteristic Symbol Terminal Test Conditions Min.

Typ.

Max Units

Protection Operation

OCP Threshold Voltage at Zero

Duty Cycle (0% On-Duty)

V

OCP1

3-5

Set V

FM

= 0 V and increase V

OCP.

(V

OCP1

is the S/OCP terminal voltage level at which D/ST changes from low to high) Measurement circuit 5

Drain Peak Current Compensation

Coefficient

OCP Threshold Voltage After

Compensation

V

D

PC

OCP2

–

3-5

D

PC

= –0.75× SLP / f

V

OCP2

= D

PC

× D

MAX

OSC(av)

+ V

OCP1

Leading Edge Blanking Time

OLP Delay Time

Circuit Current in OLP-Operation

OVP Protection Voltage

Latch Circuit Sustaining Current

Latch Circuit Release Voltage

ELP Threshold Voltage

2

2

V

I

V

I t t blank

CC (OLP)

CC(OVP)

CC(La.H)

CC(La.OFF)

V

OLP

ELP

1-5

1-5

4-5

4-5

4-5

4-5

7-5

(The low portion of the D/ST terminal waveform at

V

OCP

= 2 V) Measurement circuit 5

(Time between setting FB terminal open and when oscillation stops) Measurement circuit 6

(Inflow current into VCC terminal after OLP operation)


(VCC terminal voltage at which the voltage of D/ST terminal is switched from low to high by decreasing

V

FB

after setting V

V

CC

FM

= 0 V) Measurement circuit 1,

= 18.0 V through 27 to 30 V

(Inflow current into VCC terminal after OVP operation)

Measurement circuit 1, V

CC

= 8 V

(VCC voltage at which I

CC

is dropped below 20 μA by decreasing V

CC

V

CC

after OVP operation)

= 31.0 V through 7.8 to 6.4 V

(FM/ELP terminal voltage at which the oscillation of the D/ST terminal waveform is stopped by increasing

V

FM


Inflow Current at External Latch

Protection

Thermal Shut Down Operating

Temperature

T

I

ELP

JTSD

7-5

–

(Inflow current at V

FM

= V

ELP


Power MOSFET Characteristics

Drain-to-Source Breakdown Voltage

Drain Leakage Current

V

DSS

I

DSS

1-3

1-3

I

D

= 300 μA, Measurement circuit 8

V

D

= 650 V, Measurement circuit 7

ON-Resistance

Switching Time

Thermal Resistance

Single Pulse Avalanche Energy

R

DS(ON) t r

R

θJ-F

E

AS

1-3

1-3

–

–

I

D

= 0.6 A, V

FM

= 0 V Measurement circuit 10


Measured between junction and internal frame


1 Input and output current polarity at the device pin; plus(+) represents sink and minus(–) represents source.

2 The latch circuit means a circuit operated ELP, OVP, and TSD.

0.71

0.78

0.86

1.5

1.9

0.82

0.93

1.04

280

–

–

27

–

6.4

6.4

–

135

650

–

–

–

–

–

400

200

410

28.5

140

7.1

7.1

55

–

–

–

–

–

–

–

2.3

520

–

700

30

220

7.8

7.8

100

–

V mV/

DC%

V ns ms

μA

V

μA

V

V

μA

°C

–

300

3.95

400

2.23

°C/W

– –

V

μA

Ω ns




6

STR-W6251D



Measurement Circuit 1

STR-W6200D

100Ω

V

1

D/ST S/OCP VCC GND

3 5

V

D

DD

10V V

I

CC

A

CC

+

FB

FM/

ELP

7

1μF

V

FB

V

FM

V

CC

V

FM

V

FB

V

D

V

CC(ON)

13.8V

0V

0V

V

CC(OVP)

32V

18V

5V

3.65V

V

CC(OFF)

V

OFF(FM)

0V

2V

8V

V

CCc(La.OFF)

I

CC

I

CC(OFF)

I

CC(STOP)

I

CC(ON)


I

CC(La.H)

V

CC

V

FB

STR-W6200D

100Ω

V

1

D/ST S/OCP VCC GND

3 5

V

D

DD

10V

18V

V

CC

+

1μF

FB

FM/

ELP

7

A

I

FM

V

FB

V

FM

V

FM

I

FM

0μA

V

D

18V

5V

0V

V

FMH

4.5Vtyp

I snk(FM) f osc(Hi)

0V

V

FML f osc(Lo)

5V

2.8Vtyp

V

LFM

+(V

FMH

-V

FML

)/2

I src(FM)

V

ELP

I

ELP t2 f osc(av) t1

100Ω

V

DD

10V

STR-W6200D

1

D/ST S/OCP VCC GND

3 5

V

D

18V

V

CC

+

1μF

FB

A

I

FB

7

FM/

ELP

V

FB

V

FM

V

CC

V

FM


18V

5V

0V

5V

V

FB

Vburst

0V

V

D

5V

-I

FB

I

FB(MAX)

V

HYS

5V

I

FB(MIN)




7

STR-W6251D



STR-W6200D

FB

FM/

ELP

1

D/ST S/OCP VCC GND

3 5

V

D

V

OCP

100Ω

18V

+

1μF

V

DD

10V

V

CC

V

FB

4V

7

V

FM

STR-W6200D

D/ST S/OCP VCC GND FB

FM/

ELP

5 7 1

V

D

100ǡ

3

V

OCP

V

DD

20V

18V

V

CC

+

1μF

V

FM

V

CC

V

FM

V

FB

V

OCP

5V


18V

3.65V

4V

Internal feedback signal

0.68V

V1-0.04V

V1-0.02V

V

D

࡮

SLP

= t3 / t4 100

࡮

LP

= 0.02 / (t2-t1) t1 t2

V1 t3


18V

V

CC

5V

V

FM 0V

V

OCP1

V

OCP

0V

3.65V

2V

V

D

V

D(Lo)

V

OCP2

= (–0.75 × SLP × D

MAX

/ f

OSC(av)

) + V

OCP1 tblank


t4 t5(≈tblank)

STR-W6200D

1

D/ST S/OCP VCC GND

3 5

V

D

I

CC

A

V

FB

100Ω

+

1μF

SW

FB

V

DD

10V V

CC

18V

FM/

ELP

7

V

FM

47nF

18 V

V

CC

V

FM

V

FB

SW ONψOFF

V

D t

FM

I

CC

7.8 V typ t

OLP

(= t

FM

16)




I

CC(OLP)

8

STR-W6251D



STR-W6200D


FM/

ELP

1

I

D

A

3

I

CC

A

5 7

V

DD

V

CC

+

1μF

V

FM


400V

V

DD

I

D

I

CC

V

CC

V

FM

0V

0V

I

STARTUP

18V

650V

V

BIAS

13V

5V

I

DSS

Measurement Circuit 8 Measurement Circuit 9

V

D

V

1

STR-W6200D


FM/

ELP

3

I

D

300

μ A

18V

V

CC

5

+

1μF

7

V

FM

47nF

1

V

D

100Ω

STR-W6200D


FM/

ELP

3 5 7

+

1μF

V

FM

47nF

V

DD

10V

18V

V

CC

V

D tr

10V

90%

10%

V

D

V

1

STR-W6200D


FM/

ELP

3 5 7

I

D

0.6A

18V

V

CC

+

1μF

V

FM


V

CC

V

FM

18V

5V

V

D

0V

V

D(Lo)

R

DS(ON)

=V

D(Lo)

/ 0.6




9

STR-W6251D



L

1

STR-W6200D


FM/

ELP

3 5 7

V

DD

V

GS

V

DS

18V

V

CC

+

1μF


Vcc

V

GS

V

DS

I

L t

18V

8V

V

DSpeak

V

DD

V IIN ( ac)

TYPICAL APPLICATION CIRCUIT

1

D/ST

4

V C C

S T R -W 6200D

S/O C P

3

FM /

ELP

7

G N D

5

FB

6

Option




O U T

G N D

10

STR-W6251D

10.0 ±0.2

Gate Burr



PACKAGE DIMENSIONS, TO-220

4.2 ±0.2

2.8 ±0.2

Branding

XXXXXXXX

XXXXXXXX

2.6 ±0.1

Terminal dimension at case surface

(2×R1)

1.34

+0.2

–0.1

1.74

+0.2

–0.1

6×P1.27 ±0.15 = 7.62 ±0.15

Terminal dimensions at case surface

0.45

+0.2

–0.1

5.08 ±0.6

Terminal dimension at lead tips

1 2 3 4 5 6 7

Gate burr: 0.3 mm (max.)

Terminal core material: Cu

Terminal treatment: Ni plating and solder dip

Heat sink material: Cu

Heat sink treatment: Ni plating

Leadform: 2003

Weight (approximate): 2.3 g

Dimensions in millimeters

Drawing for reference only

Branding codes (exact appearance at manufacturer discretion):

1st line, type: W6251

2nd line, lot: YMDD R

Where: Y is the last digit of the year of manufacture

M is the month (1 to 9, O, N, D)

DD is the 2-digit date

R is the manufacturer registration symbol

Leadframe plating Pb-free. Device composition complies with the RoHS directive.




11

STR-W6251D

Shipping Tube Dimensions:

Wall thickness: 0.6±0.3 mm

Wall warp: <2 mm

Material: Hardened polyvinyl

Coating: antistatic

Tolerance ±0.4 mm, unless otherwise specified



PACKING SPECIFICATIONS

Minimum packing option: Tube FM-205 E

4.8

+0.4

0

1.4

5.1

9 × R0.6

2.85

(3.6)

14.3

1.3

+0.3

–0.2

Side marked

“ANTISTATIC”

Shipping Carton Dimensions:

Capacity: 1800 pieces maximum per carton

36 tubes per carton

3 rows, 12 tubes per row

Carton

(side

view)

All dimensions: mm

Spacer

Tube

Spacer

620

Tube

185




12

STR-W6251D



WARNING

— These devices are designed to be operated at lethal voltages and energy levels. Circuit designs that embody these components must conform with applicable safety requirements. Pre cau tions must be taken to prevent accidental contact with power-line potentials. Do not connect ground ed test equipment.

The use of an isolation transformer is recommended during circuit development and breadboarding.

Because reliability can be affected adversely by improper storage environments and handling methods, please observe the following cautions.

Cautions for Storage

• Ensure that storage conditions comply with the standard temperature (5°C to 35°C) and the standard relative humidity (around 40 to 75%); avoid storage locations that experience extreme changes in temperature or humidity.

• Avoid locations where dust or harmful gases are present and avoid direct sunlight.

• Reinspect for rust in leads and solderability of products that have been stored for a long time.

Cautions for Testing and Handling

When tests are carried out during inspection testing and other standard test periods, protect the products from power surges from the testing device, shorts between adjacent products, and shorts to the heatsink.

Remarks About Using Silicone Grease with a Heatsink

•

When silicone grease is used in mounting this product on a heatsink, it shall be applied evenly and thinly. If more silicone grease than required is applied, it may produce stress.

•

Volatile-type silicone greases may produce cracks after long periods of time, resulting in reduced heat radiation effect. Silicone grease with low consistency (hard grease) may cause cracks in the mold resin when screwing the product to a heatsink.

•

Our recommended silicone greases for heat radiation purposes, which will not cause any adverse effect on the product life, are indicated below:

Type

G746

Suppliers

Shin-Etsu Chemical Co., Ltd.

YG6260 GE Toshiba Silicone Co., Ltd.

SC102 Dow Corning Toray Silicone Co., Ltd.

Soldering

• When soldering the products, please be sure to minimize the working time, within the following limits:

260±5°C 10 s

350±5°C 3 s

•

Soldering iron should be at a distance of at least 1.5 mm from the body of the products

Electrostatic Discharge

• When handling the products, operator must be grounded. Grounded wrist straps worn should have at least 1 MΩ of resistance to ground to prevent shock hazard.

• Workbenches where the products are handled should be grounded and be provided with conductive table and floor mats.

• When using measuring equipment such as a curve tracer, the equipment should be grounded.

• When soldering the products, the head of soldering irons or the solder bath must be grounded in other to prevent leak voltages generated by them from being applied to the products.

• The products should always be stored and transported in our shipping containers or conductive containers, or be wrapped in aluminum foil.

Assembly

• During soldering or other operations, the interior frame temperature of the device should never exceed 105°C.

• Recommended screw torque through the mounting tab is 0,588 to 0.785 N • m (6 to 8 kgf • cm)




13

STR-W6251D



The products described herein are manufactured in Ja pan by Sanken Electric Co., Ltd. for sale by Allegro MicroSystems, Inc.

Sanken and Allegro reserve the right to make, from time to time, such de par tures from the detail spec i fi ca tions as may be re quired to per mit im-

prove ments in the per for mance, reliability, or manufacturability of its prod ucts. Therefore, the user is cau tioned to verify that the in for ma tion in this publication is current before placing any order.

When using the products described herein, the ap pli ca bil i ty and suit abil i ty of such products for the intended purpose shall be reviewed at the users responsibility.

Although Sanken undertakes to enhance the quality and reliability of its prod ucts, the occurrence of failure and defect of semi con duc tor products at a certain rate is in ev i ta ble.

Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to society due to device failure or malfunction.

Sanken products listed in this publication are designed and intended for use as components in general-purpose electronic equip ment or apparatus

(home ap pli anc es, office equipment, tele com mu ni ca tion equipment, measuring equipment, etc.). Their use in any application requiring radiation hardness assurance (e.g., aero space equipment) is not supported.

When considering the use of Sanken products in ap pli ca tions where higher reliability is re quired (transportation equipment and its control systems or equip ment, fire- or burglar-alarm systems, various safety devices, etc.), contact a company sales representative to discuss and obtain written confirmation of your spec i fi ca tions.

The use of Sanken products without the written consent of Sanken in applications where ex treme ly high reliability is required (aerospace equipment, nuclear power-control stations, life-support systems, etc.) is strictly prohibited.

The information in clud ed herein is believed to be accurate and reliable. Ap pli ca tion and operation examples described in this pub li ca tion are given for reference only and Sanken and Allegro assume no re spon si bil i ty for any in fringe ment of in dus tri al property rights, intellectual property rights, or any other rights of Sanken or Allegro or any third party that may result from its use.

Copyright © 2006-2007 Allegro MicroSystems, Inc.

This datasheet is based on Sanken datasheet SSE23661




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Asia-Pacific

China

Sanken Electric Hong Kong Co., Ltd.

Suite 1026, Ocean Centre

Canton Road, Tsimshatsui

Kowloon, Hong Kong

Tel: 852-2735-5262, Fax: 852-2735-5494

Sanken Electric (Shanghai) Co., Ltd.

Room 3202, Maxdo Centre

Xingyi Road 8, Changning District

Shanghai, China

Tel: 86-21-5208-1177, Fax: 86-21-5208-1757

Taiwan Sanken Electric Co., Ltd.

Room 1801, 18th Floor

88 Jung Shiau East Road, Sec. 2

Taipei 100, Taiwan R.O.C.

Tel: 886-2-2356-8161, Fax: 886-2-2356-8261

Japan

Sanken Electric Co., Ltd.

Overseas Sales Headquarters

Metropolitan Plaza Building

1-11-1 Nishi-Ikebukuro, Toshima-ku

Tokyo 171-0021, Japan

Tel: 81-3-3986-6164, Fax: 81-3-3986-8637

Korea

Sanken Electric Korea Co., Ltd.

Samsung Life Yeouido Building 16F

23-10, Yeouido-Dong, Yeongdeungpo-gu

Seoul 150-734, Korea

Tel: 82-2-714-3700, Fax: 82-2-3272-2145



Worldwide Contacts

Singapore

Sanken Electric Singapore Pte. Ltd.

150 Beach Road, #14-03 The Gateway West

Singapore 189720

Tel: 65-6291-4755, Fax: 65-6297-1744

Europe

Sanken Power Systems (UK) Limited

Pencoed Technology Park

Pencoed, Bridgend CF35 5HY, United Kingdom

Tel: 44-1656-869-100, Fax: 44-1656-869-162

North America

United States

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01606, U.S.A.

Tel: 1-508-853-5000, Fax: 1-508-853-7895

Allegro MicroSystems, Inc.

14 Hughes Street, Suite B105

Irvine, California 92618, U.S.A.

Tel: 1-949-460-2003, Fax: 1-949-460-7837




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