H7N0603DL H7N0603DS DATASHEET

H7N0603DL H7N0603DS DATASHEET
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April 1st, 2010
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H7N0603DL, H7N0603DS
Silicon N Channel MOS FET
High speed power Switching
REJ03G0123-0200
Rev.2.00
Jan.26.2005
Features
• Low on - resistance
RDS (on) = 11 mΩ typ.
• Low drive current
• Capable of 4.5 gate drive
Outline
PRSS0004ZD-B
(Previous code: DPAK(L)-2)
PRSS0004ZD-C
(Previous code: DPAK-(S))
4
D
G
4
1 2
3
1. Gate
2. Drain
3. Source
4. Drain
H7N0603DS
S
1 2
3
H7N0603DL
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25°C
3. Tch = 25°C, Rg ≥ 50Ω
Rev.2.00, Jan.26.2005, page 1 of 8
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IAPNote3
EARNote3
PchNote2
Tch
Tstg
Ratings
60
±20
30
120
30
25
53.6
40
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
H7N0603DL, H7N0603DS
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
Static drain to source on state
resistance
RDS(on)
Forward transfer capacitance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
fall time
Body - drain diode forward voltage
Body – drain diode reverse recovery
time
Notes: 1. Pulse Test
Rev.2.00, Jan.26.2005, page 2 of 8
tf
VDF
trr
Min
60
±20
—
—
1.5
—
—
24
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
11
16
40
3200
385
225
56
11
12
30
125
90
Max
—
—
±10
10
2.5
15
22
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
—
—
—
17
0.9
30
—
—
—
ns
V
ns
Test condition
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 60 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 15 A, VGS = 10 VNote1
ID = 15 A, VGS = 4.5 VNote1
ID = 15 A, VDS = 10 VNote1
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 25 V
VGS = 10 V
ID = 30 A
VGS = 10 V, ID = 15 A
RL = 2.0 Ω
Rg = 4.7 Ω
IF = 30 A, VGS = 0Note1
IF = 30 A, VGS = 0
diF / dt = 100 A / µs
H7N0603DL, H7N0603DS
Main Characteristics
Power vs. Tmperature Derating
Maximum Safe Operation Area
1000
(A)
300
40
100
0µ
ID
30
Drain Current
20
10
s
10
DC Operation
(Tc = 25°C)
3
1
PW = 10 ms
(1 shot)
0.3 Operation in
0.1 this area is
limited by RDS(on)
0
50
100
150
Case Temperature
0.03
0.01 Ta = 25°C
0.1 0.3
1
200
Pulse Test
3.5 V
20
10
3V
(A)
40
30
20
150°C
10
25°C
Tc=–40°C
2.5 V
4
6
Drain to Source Voltage
8
0
10
2
VDS (V)
300
ID = 20 A
200
10 A
5A
12
4
8
Gate to Source Voltage
Rev.2.00, Jan.26.2005, page 3 of 8
8
10
VGS (V)
100
Pulse Test
30
VGS = 4.5 V
10
10 V
3
1
16
VGS
Drain Source On State Resistance
RDS(on) (mΩ)
400
0
6
Static Drain to Source State Resistance
vs. Drain Current
Pulse Test
100
4
Gate to Source Voltage
Drain Source Saturation Voltage vs.
Gate to Source Voltage
500
100
VDS = 10 V
Pulse Test
ID
4.0 V
4.5 V
2
30
VDS (V)
Typical Trasfer Characteristics
30
0
10
50
Drain Current
(A)
ID
Drain Current
40
VGS = 10 V
5.0 V
3
Drain to Source Voltage
Tc (°C)
Typical Output Characterristics
50
Drain to Source Voltage VDS(on) (mV)
µs
s
m
30
10
10
1
Channel Dissipation
Pch (W)
50
20
(V)
1
10
3
Drain Current
ID
30
(A)
100
H7N0603DL, H7N0603DS
Forward Transfer Admittance vs.
Drain Current
50
Forward Transfer Admittance |yfs| (S)
Drain Source On State Resistance
RDS(on) (mΩ)
Static Drain to State Resistance
vs. Temperature
Pulse Test
40
30
5, 10, 20 A
20
4.5 V
10
0
–50
0
50
100
Case Temperature
Tc = –40°C
10
1
25°C
0.1
150°C
0.01
0.001
5, 10, 20 A
VGS = 10 V
100
150
VDS = 10 V
Pulse Test
0.0001 0.001 0.01
Drain Current ID
Tc (°C)
30
10
3
1
3
10
Reverse Drain Current
30
IDR
Ciss
1000
300
Coss
100
Crss
30 VGS = 0
f = 1 MHz
10
0
10
20
30
40
50
Drain to Source Voltage VDS (V)
100
(A)
Dynamic Input Characteristics
100
40
20
0
12
8
VDD = 50 V
25 V
10 V
20
40
60
Reverse Drain Current
Rev.2.00, Jan.26.2005, page 4 of 8
4
0
80
100
Qg (nc)
(V)
300
Switching Time t (ns)
VDS
VDD = 50 V
25 V
10 V
VGS
16
Gate Source Voltage
(V)
VDS
Drain to Source Voltage
VGS
80
60
Switching Characteristics
1000
20
ID = 30 A
100
(A)
3000
100
0.3
10
10000
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
1
0.1
1
Typical Capacitance vs.
Drain to Source Voltage
Body-Drain Diode Reverse
Recovery Time
300
0.1
tr
tf
td(off)
100
30
td(on)
tr
tf
10
VGS = 10 V, VDD = 30 V
3 PW = 5 µs, duty < 1 %
Rg = 4.7 Ω
1
0.1
0.3
3
10
1
30
Drain Current ID (A)
100
H7N0603DL, H7N0603DS
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR
(A)
10 V
40
30
5V
20
VGS = 0, –5 V
10
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
VSD
(mJ)
50
80
Repetitive Avalanche Energy EAR
Maximum Avalanche Energy vs.
Channel Temperature Derating
64
IAP = 25 A
VDD = 25 V
duty < 0.1 %
Rg > 50 Ω
48
32
16
0
25
(V)
50
75
100
125
150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
γs (t)
3
Normalized Transient Thermal Impedance
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
θch - c(t) = γs (t) • θch - c
θch - c = 3.125°C/ W, Tc = 25°C
0.05
2
0.0
0.03
PDM
1
0.0
D=
ot
PW
T
PW
1sh
T
0.01
10 µ
100 µ
1m
10 m
100 m
Pulse Width PW (S)
Avalanche Test Circuit
V DS
Monitor
1
10
Avalanche Waveform
EAR =
L
1
2
• L • I AP •
2
I AP
Monitor
VDSS
VDSS – V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50Ω
0
Rev.2.00, Jan.26.2005, page 5 of 8
VDD
H7N0603DL, H7N0603DS
Switching Time Test circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
Rg
90%
D.U.T.
RL
Vin
Vout
Vin
10 V
V DS
= 30 V
10%
90%
td(on)
Rev.2.00, Jan.26.2005, page 6 of 8
10%
tr
10%
90%
td(off)
tf
H7N0603DL, H7N0603DS
Package Dimensions
• H7N0603DL
RENESAS Code
Previous Code
MASS[Typ.]

PRSS0004ZD-B
DPAK(L)-(2) / DPAK(L)-(2)V
0.42g
Unit: mm
1.7 ± 0.5
JEITA Package Code
2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
16.2 ± 0.5
3.1 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
(0.7)
4.7 ± 0.5
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
0.55 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
• H7N0603DS
RENESAS Code
Previous Code
MASS[Typ.]
SC-63
PRSS0004ZD-C
DPAK(S) / DPAK(S)V
0.28g
6.5 ± 0.5
5.4 ± 0.5
(0.1)
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
2.5 ± 0.5
(1.2)
1.0 Max.
2.29 ± 0.5
Rev.2.00, Jan.26.2005, page 7 of 8
(5.1)
(5.1)
(0.1)
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
JEITA Package Code
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
H7N0603DL, H7N0603DS
Ordering Information
Part Name
H7N0603DL
H7N0603DSTL
H7N0603DL-E
H7N0603DSTL-E
Quantity
100 pcs
3000 pcs
100 pcs
3000 pcs
Shipping Container
Sack
Taping
Sack
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00, Jan.26.2005, page 8 of 8
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .2.0
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