IRHM7260 JANSR2N7433 RADIATION HARDENED 200V, N-CHANNEL
PD-91332F
IRHM7260
JANSR2N7433
200V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-254AA)
REF: MIL-PRF-19500/663
®
RAD-Hard HEXFET TECHNOLOGY
™
Product Summary
Part Number Radiation Level
IRHM7260
100K Rads (Si)
IRHM3260
300K Rads (Si)
IRHM4260
500K Rads (Si)
IRHM8260 1000K Rads (Si)
RDS(on)
0.070Ω
0.070Ω
0.070Ω
0.070Ω
ID
QPL Part Number
35A* JANSR2N7433
35A* JANSF2N7433
35A* JANSG2N7433
35A* JANSH2N7433
International Rectifier’s RAD-Hard TM HEXFET ®
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices have
been characterized for both Total Dose and Single
Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
TO-254AA
Features:
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
35*
25
140
250
2.0
±20
500
35
25
5.7
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (0.063 in.(1.6mm) from case for 10s)
9.3 (Typical)
C
g
*Current is limited by package
For footnotes refer to the last page
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1
08/09/07
IRHM7260, JANSR2N7433
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
200
—
—
V
—
0.26
—
V/°C
—
—
2.0
9.0
—
—
—
—
—
—
—
—
0.070
0.077
4.0
—
25
250
Ω
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
290
42
120
50
200
200
130
—
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
V
S
µA
nA
nC
ns
nH
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 25A Ã
VGS = 12V, ID = 35A
VDS = VGS, ID = 1.0mA
VDS ≥ 15V, IDS = 25A Ã
VDS= 160V ,VGS = 0V
VDS = 160V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID =35A
VDS = 100V
VDD = 100V, ID =35A
VGS =12V, RG = 2.35Ω
Measured from Drain lead (6mm /0.25in
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
5300
1200
360
—
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
35*
140
1.8
820
8.5
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = 35A, VGS = 0V Ã
Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs
VDD ≤ 50V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
*Current limited by package
Thermal Resistance
Parameter
RthJC
RthJA
RthCS
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
Min Typ Max Units
—
—
—
— 0.50
—
48
0.21 —
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHM7260, JANSR2N7433
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
VSD
100 K Rads(Si)1
Min
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Ã
Diode Forward Voltage
200
2.0
—
—
—
—
—
Max
300K-1000K Rads (Si)2
Min
Units
Max
—
4.0
100
-100
25
0.070
200
1.25
—
—
—
—
—
4.5
100
-100
25
0.11
1.8
—
1.8
Test Conditions
µA
Ω
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS = 160V, VGS = 0V
VGS = 12V, ID = 25A
V
VGS = 0V, IS = 35A
V
nA
1. Part number IRHM7260 (JANSR2N7433)
2. Part numbers IRHM3260 (JANSF2N7433), IRHM4260 (JANSG2N7432) and IRHM8260 (JANSH2N7433)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
(MeV/(mg/cm2))
28
36.8
Energy
(MeV)
285
305
Range
(µm)
43
39
VDS(V)
@VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
190
180
170
125
—
100
100
100
50
—
200
VDS
150
Cu
100
Br
50
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHM7260, JANSR2N7433
1000
Pre-Irradiation
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
100
10
5.0V
20µs PULSE WIDTH
TJ = 25 °C
5.0V
1
10
100
100
10
VDS , Drain-to-Source Voltage (V)
2.5
TJ = 150 ° C
V DS = 50V
20µs PULSE WIDTH
6
7
8
9
10
11
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
5
100
Fig 2. Typical Output Characteristics
1000
100
10
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
1
20µs PULSE WIDTH
TJ = 150 °C
12
40A
ID = 35A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
10000
20
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
8000
C, Capacitance (pF)
IRHM7260, JANSR2N7433
Ciss
6000
4000
Coss
2000
Crss
0
1
10
ID = 35A
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
40
VDS , Drain-to-Source Voltage (V)
80
120
160
200
240
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
VDS = 160V
VDS = 100V
VDS = 40V
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
TJ = 150 ° C
10
TJ = 25 ° C
1
0.1
0.0
V GS = 0 V
0.5
1.0
1.5
2.0
2.5
3.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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3.5
100µs
1ms
10
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHM7260, JANSR2N7433
Pre-Irradiation
50
LIMITED BY PACKAGE
V GS
40
ID , Drain Current (A)
RD
VDS
D.U.T.
RG
30
+
- VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS
90%
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHM7260, JANSR2N7433
EAS , Single Pulse Avalanche Energy (mJ)
1400
TOP
1200
15V
BOTTOM
ID
16A
22A
35A
1000
L
VDS
D.U.T
RG
VGS
20V
IAS
DRIVER
+
- VDD
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
A
800
600
400
200
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12 V
QGS
.2µF
.3µF
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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12V
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHM7260, JANSR2N7433
Pre-Irradiation
Foot Notes:
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with V DS Bias.
160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Á VDD = 50V, starting TJ = 25°C, L=0.82mH
Peak IL = 35A, VGS =12V
 ISD ≤ 35A, di/dt ≤ 410A/µs,
VDD ≤ 200V, TJ ≤ 150°C
Case Outline and Dimensions — TO-254AA
0.12 [.005]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
6.60 [.260]
6.32 [.249]
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
1
C
2
2X
14.48 [.570]
12.95 [.510]
0.84 [.033]
MAX.
1.14 [.045]
0.89 [.035]
0.36 [.014]
3.81 [.150]
B A
NOT ES :
1.
2.
3.
4.
B
3
3X
3.81 [.150]
13.84 [.545]
13.59 [.535]
1.27 [.050]
1.02 [.040]
DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
CONTROLLING DIMENSION: INCH.
CONFORMS TO JEDEC OUTLINE TO-254AA.
PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 08/2007
8
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