2SK3147(L), 2SK3147(S) Data Sheet (Silicon N Channel MOS FET/High Speed Power Switching)

2SK3147(L), 2SK3147(S) Data Sheet (Silicon N Channel MOS FET/High Speed Power Switching)
Data Sheet
2SK3147(L), 2SK3147(S)
100V, 5A, 0.13Ωmax.
Silicon N Channel Power MOS FET
High Speed Power Switching
R07DS1254EJ0400
(Previous: REJ03G1072-0300)
Rev.4.00
Mar 25, 2015
Features
 Low on-resistance
RDS = 0.1  typ.
 High speed switching
 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK(L)-(2))
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
D
4
4
1. Gate
2. Drain
3. Source
4. Drain
G
1
1
2
3
S
2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note3
EAR Note3
Pch Note2
Tch
Tstg
Ratings
100
20
5
20
5
5
2.5
20
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Notes: 1. PW  10 s, duty cycle  1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg  50 
R07DS1254EJ0400 Rev.4.00
Mar 25, 2015
Page 1 of 8
2SK3147(L), 2SK3147(S)
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Note:
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
100
20
—
—
1.0
—
—
3.5
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.1
0.13
6
420
185
100
10
35
110
60
0.85
85
Max
—
—
10
10
2.5
0.13
0.17
—
—
—
—
—
—
—
—
—
—
Unit
V
V
A
A
V


S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = 100 A, VDS = 0
VGS = 16 V, VDS = 0
VDS = 100 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 3 A, VGS = 10 VNote4
ID = 3 A, VGS = 4 V Note4
ID = 3 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 3 A, VGS = 10V,
RL = 10 
IF = 5 A, VGS = 0
IF = 5 A, VGS = 0
diF/ dt = 50 A/ s
4. Pulse test
R07DS1254EJ0400 Rev.4.00
Mar 25, 2015
Page 2 of 8
2SK3147(L), 2SK3147(S)
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
50
s
0
m
s
(1
sh
tio
ot
n
1 Operation in
this area is
0.5 limited by RDS(on)
(T
)
c
=
25
°C
)
Drain Current ID (A)
m
=1
ra
2
Ta = 25°C
0.1
50
100
150
1
200
2
5
10 20
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
10
10 V
Pulse Test
3.5 V
8
6V
4V
6
3V
4
2
8
VDS = 10 V
Pulse Test
6
4
Tc = 75°C
–25°C
2
VGS =2.5 V
2
4
6
8
25°C
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
2.5
Pulse Test
2.0
1.5
1.0
ID = 5 A
0.5
2A
0
0
10
4
8
12
1A
16
20
Gate to Source Voltage VGS (V)
R07DS1254EJ0400 Rev.4.00
Mar 25, 2015
Static Drain to Source on State Resistance
RDS (on) (Ω)
0
50 100 200 500
Case Temperature TC (°C)
Drain Current ID (A)
10
Drain Current ID (A)
1
5
μs
0.2
0
Drain to Source Saturation Voltage
VDS (on) (V)
μs
0
PW
pe
O
10
10
10
C
20
10
20
30
D
Channel Dissipation Pch (W)
40
0.5
Pulse Test
0.2
VGS = 4 V
0.1
10 V
0.05
0.02
0.01
0.1 0.2
0.5
1
2
5
10 20
50
Drain Current ID (A)
Page 3 of 8
Forward Transfer Admittance
vs. Drain Current
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance ⏐yfs⏐ (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
2SK3147(L), 2SK3147(S)
0.50
Pulse Test
0.40
1, 2 A
0.30
5A
VGS = 4 V
0.20
5A
0.10
1, 2 A
10 V
0
–40
0
40
80
120
160
Tc = –25°C
25°C
10
5
75°C
2
1
0.5
0.1
VDS = 10 V
Pulse Test
0.3
1
3
10
30
100
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance
vs. Drain to Source Voltage
5000
di / dt = 50 A / μs
VGS = 0, Ta = 25°C
2000
Capacitance C (pF)
500
200
100
50
20
1000
500
Ciss
200
Coss
100
50
Crss
VGS = 0
f = 1 MHz
20
200
10
0.3
1
3
10
30
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
20
ID = 5 A
VDD = 100 V
50 V
25 V
160
16
120
12
VGS
VDS
80
8
40
0
0
100
4
VDD = 100 V
50 V
25 V
8
16
24
32
Gate Charge Qg (nc)
R07DS1254EJ0400 Rev.4.00
Mar 25, 2015
0
40
500
300
Switching Time t (ns)
10
0.1
Gate to Source Voltage VGS (V)
Reverse Recovery Time trr (ns)
20
Case Temperature TC (°C)
1000
Drain to Source Voltage VDS (V)
50
td(off)
100
tf
30
tr
10
td(on)
3
1
0.1
VGS = 10 V, VDD = 30 V
PW = 5 μs, duty < 1 %
0.3
1
3
10
30 100
Drain Current ID (A)
Page 4 of 8
2SK3147(L), 2SK3147(S)
8
6
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
(A)
10
Reverse Drain Current IDR
Reverse Drain Current vs.
Source to Drain Voltage
10 V
4
VGS = 0, –5 V
5V
2
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
2.5
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
VSD (V)
Source to Drain Voltage
IAP= 5 A
VDD = 50 V
duty < 0.1 %
Rg > 50 Ω
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
1
0.5
0.3
0.2
0.1
0.05
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 6.25°C/W, Tc = 25°C
0.02
1
0.0
0.03
e
uls
PDM
tP
1
o
sh
D=
PW
T
PW
T
0.01
10 µ
100 µ
1m
100 m
10 m
Pulse Width
10
PW (S)
Avalanche Test Circuit
VDS
Monitor
1
Avalanche Waveform
L
EAR =
1
2
• L • IAP2 •
VDSS
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
D. U. T
VDS
VDD
ID
Vin
15 V
50 Ω
0
R07DS1254EJ0400 Rev.4.00
Mar 25, 2015
VDD
Page 5 of 8
2SK3147(L), 2SK3147(S)
Switching Time Test Circuit
Switching Time Waveforms
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
10 V
50 Ω
VDD
= 30 V
Vout
10%
10%
10%
90%
td(on)
R07DS1254EJ0400 Rev.4.00
Mar 25, 2015
tr
90%
td(off)
tf
Page 6 of 8
2SK3147(L), 2SK3147(S)
Package Dimensions
JEITA Package Code
⎯
RENESAS Code
PRSS0004ZD-B
Previous Code
MASS[Typ.]
DPAK(L)-(2) / DPAK(L)-(2)V
0.42g
1.7 ± 0.5
Package Name
DPAK(L)-(2)
2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
16.2 ± 0.5
3.1 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
(0.7)
4.7 ± 0.5
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
Unit: mm
0.55 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZD-C
Previous Code
DPAK(S) / DPAK(S)V
6.5 ± 0.5
5.4 ± 0.5
(0.1)
MASS[Typ.]
0.28g
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
(5.1)
(5.1)
(0.1)
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
Package Name
DPAK(S)
2.29 ± 0.5
0 – 0.25
2.5 ± 0.5
(1.2)
1.0 Max.
2.29 ± 0.5
R07DS1254EJ0400 Rev.4.00
Mar 25, 2015
0.8 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
Page 7 of 8
2SK3147(L), 2SK3147(S)
Ordering Information
Part Name
2SK3147L-E
2SK3147STR-E
Quantity
3200 pcs
3000 pcs
R07DS1254EJ0400 Rev.4.00
Mar 25, 2015
Shipping Container
Box (Sack)
Taping
Page 8 of 8
Notice
1.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
2.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
3.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
4.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or
5.
Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on
third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product.
the product's quality grade, as indicated below.
"Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic
equipment; and industrial robots etc.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc.
Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical
implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it
in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses
incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics.
6.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
7.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or systems manufactured by you.
8.
Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
9.
Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or
regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the
development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and
regulations and follow the procedures required by such laws and regulations.
10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the
contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics
products.
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.com
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2801 Scott Boulevard Santa Clara, CA 95050-2549, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
9251 Yonge Street, Suite 8309 Richmond Hill, Ontario Canada L4C 9T3
Tel: +1-905-237-2004
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-6503-0, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
Room 1709, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100191, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 301, Tower A, Central Towers, 555 Langao Road, Putuo District, Shanghai, P. R. China 200333
Tel: +86-21-2226-0888, Fax: +86-21-2226-0999
Renesas Electronics Hong Kong Limited
Unit 1601-1611, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2265-6688, Fax: +852 2886-9022
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre, Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 1207, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics India Pvt. Ltd.
No.777C, 100 Feet Road, HALII Stage, Indiranagar, Bangalore, India
Tel: +91-80-67208700, Fax: +91-80-67208777
Renesas Electronics Korea Co., Ltd.
12F., 234 Teheran-ro, Gangnam-Gu, Seoul, 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2015 Renesas Electronics Corporation. All rights reserved.
Colophon 5.0
Was this manual useful for you? yes no
Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Download PDF

advertisement