TLE7241E Data Sheet (2.5 MB, EN)

TLE7241E Data Sheet (2.5 MB, EN)
Data Sheet, Rev. 1.1, Jan. 2009
TLE 7241E
Dual Channel Constant Current
Control Solenoid Driver
Automotive Power
TLE 7241E
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
1.1
1.2
1.3
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4
4.1
Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5
5.1
5.2
5.3
5.4
5.4.1
5.4.2
5.4.3
5.4.4
5.5
5.5.1
5.5.2
5.5.3
5.5.4
5.6
5.6.1
5.6.2
Functional Description and Electrical Characteristics . . . . . . . . . . . .
Supply and Reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input/Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Protection and Control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Overvoltage Sensing and Protection . . . . . . . . . . . . . . . . . . . . . . . . . . .
Overcurrent / Short to VBAT Sensing . . . . . . . . . . . . . . . . . . . . . . . . . . .
Open Load / Short to Ground Detection . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Current Control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Hysteretic Current Control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Dither Control and Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Command Out of Range / Dither Clipping . . . . . . . . . . . . . . . . . .
Error Correction Registers / Average Switch Threshold Trimming . . . .
SPI Command and Diagnosis Structure . . . . . . . . . . . . . . . . . . . . . . . . . .
SPI Signal Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SPI Command Structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
6.1
Application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
Layout Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
8
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Data Sheet
2
3
3
4
4
13
13
14
15
16
16
17
21
28
30
30
37
43
44
46
46
52
Rev. 1.1, 2009-01-19
Dual Channel Constant Current Control Solenoid
Driver
1
Overview
1.1
Features
•
•
•
•
•
•
•
•
•
TLE 7241E
PG-DSO-20-27
Two Fully Independent Channels
Integrated N-channel DMOS transistors
Programmable Average Current with 10-bit resolution
via SPI
– Iavg range = 0 to 1000 mA (typical)
Programmable Superimposed Dither
– Programmable Frequency (41 Hz to 1 kHz typ)
– Programmable Amplitude (12.5 to 390 mVpp typ)
– Programmable Hysteresis (40 to 110 mVpp typ)
Interface and Control
– 16-bit SPI (Serial Peripheral Interface) daisy chainable
– A single “Default” pin to disable both channels and reset the programmable
registers of both channels
– 5.0 V and 3.3 V logic compatible I/O
– The contents of all registers can be verified via SPI
– Operation with or without external reference possible
Protection
– Overcurrent
– Overvoltage
– Overtemperature
Diagnostics
– Overcurrent / shorted solenoid
– Overtemperature
– Open load
– Short to GND
Green Product (RoHS compliant)
AEC Qualified
Type
Ordering Code
Package
TLE 7241E
on request
PG-DSO-20-27
Data Sheet
3
Rev. 1.1, 2009-01-19
TLE 7241E
Overview
1.2
•
•
Applications
Variable force solenoids (e.g. automatic transmission solenoids)
Constant current controlled solenoids like
– Idle Speed Control
– Exhaust Gas Recirculation
– Valve control
– Suspension Control
1.3
General Description
The TLE 7241E is a dual channel constant current control solenoid driver with integrated
DMOS power transistors. The average load current can be programmed to a value in the
range of 0 mA to 1000 mA (with a 1 Ω external sense resistor) with 10 bits of resolution.
Load current is controlled using a hysteretic control scheme with a programmable
hysteresis value. A triangular “dither” waveform can be superimposed on the switching
current waveform in order to improve the transfer function of the solenoid. The amplitude
and frequency of the dither waveform are programmable by the SPI interface. The
device is protected from damage due to overcurrent, overvoltage and overtemperature
conditions, and is able to diagnose and report open loads, shorted loads, and loads
shorted to ground.
Note: An external free-wheeling diode must be provided when using the TLE 7241E in
constant current control mode, otherwise the IC will be damaged.
For best accuracy, an external 2.5 V reference voltage should be supplied at the REF
pin. The TLE 7241E also includes an internal 2.5 V reference voltage, which can be
selected by connecting the REF pin to ground. The reference voltage selection (internal
or external) can be verified via the SPI interface.
Data Sheet
4
Rev. 1.1, 2009-01-19
TLE 7241E
Overview
Application Block Diagram
Solenoid
VBAT
VBAT
VDD
BAT
REF
OUT1
DEFAULT
TEST
Logic
VBAT
NEG1
Channel 1
VSO
PGND1
SI
BAT
REF
SO
OUT2
SPI
SCK
Channel 2
NEG2
CSB
POS2
GND
Figure 1
Data Sheet
VBAT
Solenoid
POS1
PGND2
Basic Application Diagram
5
Rev. 1.1, 2009-01-19
TLE 7241E
Overview
Detailed Block Diagram
REF
Vdd
6
14
BAT
16
Diagnostics &
Protection
*
*
*
*
*
*
Int
Vref
Vcal
detect
Over t em p
Open load while on
Open load while of f
shorted load
load short ed t o ground
Overvolt age (Vpwr)
Diff
Amp
Register
bank
Vref
+
-
4
POS1
3
NEG1
2
OUT1
1
PGND1
Vdd
Status
Vbat
Fault type bit
DEFAULT
7
TEST
13
VSO
SPI Decoder
VSO
9
SCK
8
Control Circuit
Switching
Hysteresis
Error Cor Reg
200mv
Error Cor Reg
400mv
Error Cor Reg
600mv
Error Cor Reg
800mv
Error Cor Reg
1000mv
Dither
Osc
Revision Code
SI
10
Logic and gate
drive with
overload
protection
Slew Rate
11
CSB
Average Current
Vdd
Tem p
Dither Register
CHANNEL #1
SPI
Interface
18
POS2
NEG2
19
OUT2
20
PGND2
17
SO
12
CHANNEL #2
15
GND
Figure 2
Data Sheet
Detailed Block Diagram
6
Rev. 1.1, 2009-01-19
TLE 7241E
Pin Configuration
2
Pin Configuration
Pin Assignment
1
20
PGND2
OUT1
2
19
OUT2
NEG1
3
18
NEG2
POS1
4
17
POS2
N.C.
5
16
BAT
VDD
6
15
GND
DEFAULT
7
14
REF
SCK
8
13
TEST
CSB
9
12
SO
10
11
VSO
SI
TLE 7241E
PGND1
EPGND
Figure 3
PINOUT.VSD
Pin-Out
Pin Definitions and Functions
Pin
Pin Name
Pin Description
1
PGND1
Power Ground Channel 1; internally connected to
PGND2
2
OUT1
Output Channel 1; Drain of Output DMOS; connect to
negative terminal of external sense resistor
3
NEG1
Negative Sense Pin Channel 1; connect to negative
terminal of external sense resistor with dedicated trace
4
POS1
Positive Sense Pin Channel 1; connect to positive
terminal of external sense resistor with dedicated trace
5
NC
Not Connected; not bonded internally
6
VDD
Logic Supply Voltage; connect a ceramic capacitor to
GND near the device
7
DEFAULT
Control Input; Active high digital input. 3.3V and 5.0V
logic compatible. In case of not used, connect to ground
Data Sheet
7
Rev. 1.1, 2009-01-19
TLE 7241E
Pin Configuration
Pin Definitions and Functions (cont’d)
Pin
Pin Name
Pin Description
8
SCK
SPI Clock; Digital input pin. 3.3V and 5.0V logic
compatible
9
CSB
Chip Select Bar; Active low digital input pin. 3.3V and
5.0V logic compatible
10
SI
Serial Data Input; 3.3V and 5.0V logic compatible
11
VSO
SPI Supply Voltage; connect a ceramic capacitor to GND
near the device
12
SO
Serial Data Output; Supplied by Vso pin
13
TEST
Test Pin; connect to GND
14
REF
Voltage Reference; connect to external 2.5 V reference,
or connect to GND to enable internal reference.
15
GND
Ground; signal ground
16
BAT
BAT Input; connect to the solenoid supply voltage
through a series resistor. Connect a ceramic capacitor to
GND near the device
17
POS2
Positive Sense Pin Channel 2; connect to positive
terminal of external sense resistor with dedicated trace
18
NEG2
Negative Sense Pin Channel 2; connect to negative
terminal of external sense resistor with dedicated trace
19
OUT2
Output Channel 2; Drain of Output DMOS; connect to
negative terminal of external sense resistor
20
PGND2
Power Ground Channel 2; internally connected to
PGND1
Expose EPGND
d Lead
Frame
GND; Should be connected to GND, PGND1 and PGND2
and to the ground plane of the ECU
Note: If a channel is unused, the OUTx, NEGx, and POSx pins should be connected
together.
Data Sheet
8
Rev. 1.1, 2009-01-19
TLE 7241E
Maximum Ratings
3
Maximum Ratings
Absolute Maximum Ratings1)
Tj = -40 to 150 °C
Pos. Parameter
Symbol
Limit Values
Unit Notes
Min.
Max.
-0.3
-0.3
-0.3
50
6.0
6.0
Vdc –
Vdc
Vdc
POSx-NEGx
-0.3
-0.3
-0.3
50
50
20
Vdc –
Vdc
Vdc
Voltages
M.1
Supply Voltage
BAT
VDD
VSO
M.2
Analog Input Voltage
POSx
NEGx
M.3
Output Voltage
OUTx
-0.3
50
Vdc –
M.4
Digital Input Voltage
REF
TEST
SI
SCK
CSB
DEFAULT
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
min. (6.0, VDD + 0.3)
6.0
6.0
6.0
min. (6.0, VSO + 0.3)
min. (6.0, VSO + 0.3)
Vdc –
Vdc
Vdc
Vdc
Vdc
Vdc
M.5
Digital Output Pin
Voltage
SO
-0.3
min. (6.0, VSO + 0.3) Vdc –
M.6
Dynamic Clamp
Voltage
Tclamp < 2.0 ms
BAT
POSx
NEGx
OUTx
-1.5
-1.5
-1.5
-1.5
–
–
–
–
V
V
V
V
M.7
Ground Pin Voltage
(GND)
GND
-0.3
0.3
Vdc –
M.8
Difference between
PGND1 and PGND2
PGNDx
-0.3
0.3
Vdc –
Tj
-40
150
°C
–
Tst
Emax
-55
150
°C
–
–
30
mJ
–
–
Others
M.9
Biased Junction
Temperature
M.10 Storage Temperature
M.11 Single Clamp Energy
(OUTx) I=1.0A
Tj=150 °C
Data Sheet
9
Rev. 1.1, 2009-01-19
TLE 7241E
Maximum Ratings
Absolute Maximum Ratings1) (cont’d)
Tj = -40 to 150 °C
Pos. Parameter
Symbol
Limit Values
Unit Notes
Min.
Max.
M.12 ESD HBM all pins
EIA/JESD22-A 114B
(1.5 K Ω, 100 pF)
–
-2
+2
kV
–
M.13 ESD MM all pins
EIA/JESD22-A115A
(0 Ω, 200 pF)
–
-200
200
V
–
1) Not subject to production test, specified by design
All voltages are with respect to PGND1 & 2. Positive current flows into the pin unless
otherwise specified.
Attention: Stresses above those listed here may cause permanent damage to the
device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Data Sheet
10
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Range
4
Functional Range
Functional Range
Tj = -40 to 150 °C; VREF = 2.5V
Pos. Parameter
Symbol
Limit Values
Min.
Max.
Unit
Remarks
F.1
Voltage at BAT
VBAT
9
18
V
–
F.2
Voltage at VDD
VDD
4.75
5.25
V
–
F.3
Voltage at VSO
VVSO
3.1
VDD + 0.3 V
–
or 5.25V
F.4
Voltage at SI, SCK
VIN1
-0.3
Voltage at CSB,
DEFAULT, SO
VIN2
-0.3
VDD + 0.3 V
VSO + 0.3 V
–
F.5
F.6
Voltage at POS1,
POS2, NEG1,
NEG2, OUT1, OUT2
VOUT,
VPOS,
VNEG
-0.3
50
V
–
F.7
Voltage Difference
POS1-NEG1,
POS2-NEG2
VPOS VNEG
0
1.23
V
–
F.8
Voltage at PGND1,
PGND2, GND
VGND
-0.3
0.3
V
–
F.9
SPI Clock Frequency
fclk
3.2
MHz CSO = 200 pF max;
VVSO = 5 V
150
°C
F.10 Junction Temperature Tj
-40
–
–
Note: Within the functional range the IC operates as described in the circuit
description. The electrical characteristics are specified within the
conditions given in the related electrical characteristics table.
4.1
Thermal Resistance
Pos. Parameter
Symbol
Limit Values
Min.
G.1
Junction to Case1)
G.2
Junction to Ambient1)
Data Sheet
RthjC
RthjA
Typ.
5.2
26
11
Unit
Conditions
K/W
2)
K/W
2) 3)
Max.
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Range
1) Not subject to production test, specified by design.
2) Both channels on with 1W power dissipation per channel
3) Specified RthJA value is according to Jedec JESD51-2, -5, -7 at natural convection on FR4 2s2p board.
The Product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers
(2 x 70mm Cu, 2 x 35 mm Cu). Where applicable a thermal via array under the exposed pad contacted the
first inner layer.
Data Sheet
12
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
5
Functional Description and Electrical Characteristics
Note: The listed characteristics are ensured over the operating range of the integrated
circuit. Typical characteristics specify mean values expected over the production
spread. If not otherwise specified, typical characteristics apply at TA = 25 °C and
the given supply voltage.
5.1
Supply and Reference
The device has incorporated a power-on reset circuit. This feature will reset the
commanded average current to 0 mA (device off), and will reset the programmable
registers to their default values. The fault register bits are reset during power on reset.
The device will remain off until a valid command is received. The device will also be reset
in the case of an undervoltage condition on the pin VDD. Note that if the voltage on the
pin REF pin is greater than the voltage on the pin VDD, a current will flow from the REF
pin to the VDD pin.
Electrical Characteristics 1)
Tj = -40 to 150 °C; VBAT = 9 V to 18 V; VDD = 4.75 V to 5.25 V
Pos. Parameter
Symbol
Limit Values
Min.
Typ.
Max.
Unit Test Conditions and
Instructions
–
20
μA
5.1.1 REF
Bias Current
IREF
-20
5.1.2 VDD
5 V Supply
Current
IDD
–
5.1.3 VSO
I/O Supply
Current
ISO
–
5.1.4 BAT
Supply Current
IBAT
–
5.1.5 VDD
VPOR
Power-On Reset
Threshold
5.1.6 Internal
Reference
Voltage
VIREF
2)
VREF = 2.5 V
(includes leakage current
and a small current sink)
–
15
mA
VDD = 5.25 V;
CSB = 5.0 V;
DAC = 3FF
–
1
mA
VSO = 5.25 V;
CSB = 5.0 V
–
1
mA
VDD = 5.25 V;
CSB = 5.0 V
2.5
–
3.5
V
Power-On Reset
Threshold
2.45
2.5
2.55
V
Tested at wafer test.
1) Positive current flow is into the device.
2) Target @TJ = 25 °C
Data Sheet
13
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
5.2
Input/Output
The DEFAULT pin is an active high input. A weak pull-up current (typical 15 μA) on this
pin ensures a defined level when this pin is not connected (e.g. open pin). An active high
signal on the DEFAULT pin sets the commanded current for both channels to 0 mA, and
resets all programmable registers to their default values. Any SPI commands that are
received while the DEFAULT pin is high will be ignored, and the SO pin will remain in a
high impedance state.
The fault register bits are not cleared when the Default pin is asserted.
Upon coming out of default mode, the commanded current will remain at 0 mA, device
off, and the programmable registers will remain at their default values.
The DEFAULT pin must be asserted high whenever the voltage on the pin VDD is less
than the minimum VDD operating voltage (4.75 V), otherwise the electrical characteristic
specifications (see table below) may not be met. The diagnostic functions are not
operational when the VDD voltage is less than 4.75V.
The TEST pin is an active high pin. This pin must be connected directly to ground in the
application, as it is only used for IC test purposes. A passive pull-down resistor in the
device ensures a logic low value when the pin is not connected.
Electrical Characteristics 1)
Tj = -40 to 150 °C; VBAT = 9 V to 18 V; VDD = 4.75 V to 5.25 V
Pos. Parameter
Symbol
Limit Values
Typ.2) Max.
Unit Test Conditions
and Instructions
IDEFAULT -25
5.2.1 DEFAULT
Input Bias Current
-10
μA
5.2.2 TEST
RTEST
Pull-down Resistor
–
20
–
kΩ
–
Min.
-5
VDEFAULT = 0 V;
Pull-up source is pin VSO
5.2.3 SI, SCK, CSB,
DEFAULT Input
Threshold
VIH
2.0
–
–
V
SCK is specified by
design, not subject to
production test.
5.2.4 SI, SCK, CSB,
DEFAULT Input
Threshold
VIL
–
–
0.8
V
SCK is specified by
design, not subject to
production test.
5.2.5 SO Output High
Voltage
VOH
0.8
–
–
V
SO Io = -1 mA
5.2.6 SO Output Low
Voltage
VOL
–
–
0.4
V
SO Io = 1 mA
VSO
1) Positive current flow is into the device.
2) Target @TJ = 25 °C
Data Sheet
14
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
5.3
Power Output
The slew rate of the voltage on the pins OUT1 and OUT2 are programmable via the SPI
interface. The fast settings are intended for fast switching solenoids (low inductance) to
minimize power dissipation within the TLE 7241E, and to minimize DC current error due
to overshooting the switch points. The slower slew rates can be used with slower
switching solenoids (high inductance) to improve radiated emissions from the wiring
harness.
Electrical Characteristics 1)
Tj = -40 to 150 °C; VBAT = 9 V to 18 V; VDD = 4.75 V to 5.25 V
Pos. Parameter
Symbol
Min.
Limit Values
Typ.2) Max.
Unit Test Conditions and
Instructions
5.3.1 OUTx rise and OUTx
fall times Slew tR and tF
Rate reg = 0
0.25
0.5
1
μs
Threshold: 4 V to 10 V
VBAT = 14 V;
Rload = 5 Ω
5.3.2 OUTx rise and OUTx
fall times Slew tR and tF
Rate reg = 1
0.5
1
2
μs
Threshold: 4 V to 10 V
VBAT = 14 V;
Rload = 5 Ω
5.3.3 OUTx rise and OUTx
fall times Slew tR and tF
Rate reg = 2
1
2
4
μs
Threshold: 4 V to 10 V
VBAT = 14 V;
Rload = 5 Ω
5.3.4 OUTx rise and OUTx
fall times Slew tR and tF
Rate reg = 3
2.5
5
10
μs
Threshold: 4 V to 10 V
VBAT = 14 V;
Rload = 5 Ω
5.3.5 OUTx Output
Off Leakage
(00H)
IDSS
–
–
10
μA
VDS = 24 V
5.3.6 OUTx Output
Off Leakage
(00H)
IDSS
–
–
3
mA
VDS = VCLAMP - 1V
VCLAMP is the measured
5.3.7 OUTx3) Driver RDS(ON)
on Resistance
clamp voltage
(Item 5.4.1.3)
–
240
450
mΩ
Driver on Resistance
@TJ = 150 °C
1) Positive current flow is into the device.
2) TJ = 25 °C
3) Electrical Distributions must be performed on this parameter as defined in the AEC-Q100 Specification
Table 2 test 27.
Data Sheet
15
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
5.4
Protection and Control
Electrical Characteristics 1)
Tj = -40 to 150 °C; VBAT = 9 V to 18 V; VDD = 4.75 V to 5.25 V
Pos. Parameter Symbol
Limit Values
Max.
Unit Test Conditions and
Instructions
5.4.1 POS/NEG
IBIAS
POS/NEG -500
IBIAS
–
500
μA
DAC command =3FF
POS=NEG=0V &
POS=NEG=17V
5.4.2 POS/NEG
LEAKAGE
POS/NEG 20
LEAKAGE
40
60
μA
0
20
μA
Fault typing bit = 0, Zero
Current,
POS = NEG = 14 V
Fault typing bit = 1, Zero
Current,
POS = NEG = 14 V
Min.
-20
Typ.
2)
1) Positive current flow is into the device.
2) TJ = 25 °C
Note: Integrated protection functions are designed to prevent IC destruction under fault
conditions described in the data sheet. Fault conditions are considered as outside
normal operating range. Protections functions are not designed for continuous
repetitive operation.
5.4.1
Overvoltage Sensing and Protection
When the voltage on the BAT pin exceeds the Overvoltage Shutdown Threshold (see
table below, Item 5.4.1.1), the output channel will shut off to protect the IC from
excessive power dissipation. A short filter with a typical value of 6.5 μs is included to
prevent undesired shutdown due to short transient voltage spikes. Although SPI
communication will remain functional, the output will remain off. The device will resume
normal operation when the BAT voltage has dropped below the overvoltage hysteresis
level. Note that the programmable registers are not reset, and the dither counter
continues to operate during an overvoltage event.
Both channels are disabled when an overvoltage condition is detected.
Data Sheet
16
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
OVER-VOLTAGE FAULT
V POSx - VNEGx
on
LS-Switch
state
off
t < tov
Vov
Vov-ovhyst
Vpwr
14 V
Figure 4
Overvoltage Shutdown
Electrical Characteristics 1)
Tj = -40 to 150 °C; VBAT = 9 V to 18 V; VDD = 4.75 V to 5.25 V
Pos.
Parameter
Symbol
Limit Values
2)
Min.
Typ.
5.4.1.1 BAT Overvoltage OV
Shutdown
30
35
40
Vdc Ramp up BAT until
outputs Off
5.4.1.2 BAT Overvoltage OVHYST
hysteresis
–
1.0
–
Vdc Ramp BAT down
until outputs On3)
50
53
60
V
5.4.1.3 OUTx Active
Clamp Voltage
Vclamp
Max.
Unit Test Conditions
and Instructions
Id = 20 mA, output
off
1) Positive current flow is into the device.
2) TJ = 25 °C
3) Not subject to production test, specified by design.
5.4.2
Overcurrent / Short to VBAT Sensing
An overcurrent fault is detected by sensing the voltage at the POS input pin. A
comparator is used to detect the voltage while the gate drive is on. When the voltage at
the POS input pin exceeds the short circuit / overcurrent threshold (see table below,
Item 5.4.2.3) for a time greater than the short sense time (see table below, Item 5.4.2.1)
Data Sheet
17
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
the driver will be turned off and the Overcurrent / Short to VBAT (VSHT) fault bit will be
latched until the fault register is read via SPI. The driver will remain in the off condition
for the short circuit refresh time (see table below, Item 5.4.2.2). After the refresh time,
the driver will automatically turn on again. If the short condition is no longer present, the
channel will operate normally. If the short circuit condition persists, the driver will be
cycled off after the short sense time once again. The refresh time has been chosen for
minimal increase in power dissipation during a continuous fault condition.
In order to prevent false detection of an overcurrent / short to VBAT fault during an “off to
on” transition of the low-side output transistor, the detection circuit is disabled for a
blanking time (see “Electrical Characteristics” on Page 31, Item 5.5.1.1 and
Item 5.5.1.2) after the transistor is enabled (see Figure 16 and Figure 17).
The output transistor control circuit includes a current limit feature that will limit the
transistor current to a maximum value (see table below, Item 5.4.2.4) in order to protect
the device from excessive current flow.
If a new average current command or configuration command is received for a shorted
channel while that channel is within the short circuit refresh time, the new data will be
stored but the channel will remain in the off state until the refresh time expires. The new
data will become active when the short circuit condition is released.
The Overcurrent / Short to VBAT detection is channel specific.
Note: An Overcurrent / Short to VBAT fault is not detected if the average current
command is <50 mA (with 1 W sense resistor).
Note: An overcurrent / short to VBAT fault is latched until read via the MISO return word.
Data Sheet
18
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
SHORT TO Vbat FAULT - OCCURS & CLEARS WHILE ON
VPOSx -VNEGx
15V
Vpos
0V
on
LS-Switch
state
Load State
off
tss
t < tss
Short to
Vbat
Tref
ok
VSHTx fault
state
VSHTx latched
fault state
CSB
G.C.
cmd
MOSI
MISO
G.C.
cmd
G.C.
cmd
G.C.
response
G.C.
response
G.C.
response
VSHT=0
VSHT=1
VSHT=1
VSHT=0
The Latched Fault State is sampled and stored in the SPI transmit register at the points marked with “
Figure 5
G.C.
cmd
G.C.
response
“.
Short to VBAT - Channel On
SHORT TO Vbat FAULT WHILE ON, THEN TURNED OFF
VPOSx - VNEGx
15V
Vposx
0V
on
LS-Switchx
state
off
tss
Tref
Short to Vbat
Load State
ok
VSHTx
fault state
VSHTx latched
fault state
CSB
MOSI
MISO
G.C.
cmd
G.C.
cmd
A.C. cmd
Iav=0ma
G.C.
response
G.C.
response
VSHT=0
VSHT=1
The Latched Fault State is sampled and stored in the SPI transmit register at the points marked with “
Figure 6
Data Sheet
G.C.
cmd
G.C.
cmd
A.C.
G.C.
G.C.
responseresponseresponse
EDG=1 VSHT=1
VSHT=0
“.
Short to VBAT - Channel On Then Turned Off
19
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
SHORT TO Vbat FAULT - OCCURS WHILE OFF THEN TURNED ON
VP OSx - VNEGx
Vpos
15V
0V
LS-Switch
state
on
off
Tref
Short to
Load State Vbat
ok
tss
VSHTx
fault state
VSHTx latched
fault state
CSB
A.C. cmd
Iav>50ma
G.C.
cmd
MOSI
A.C.
G.C.
response response
G.C.
response
MISO
EDG=0
VSHT=0
G.C.
cmd
G.C.
cmd
G.C.
cmd
VSHT=1
G.C.
response
G.C.
response
VSHT=1
VSHT=0
The Latched Fault State is sampled and stored in the SPI transmit register at the points marked with “
Figure 7
“.
Short to VBAT - Channel Off Then Turned On
Electrical Characteristics 1)
Tj = -40 to 150 °C; VBAT = 9 V to 18 V; VDD = 4.75 V to 5.25 V
Pos.
Parameter
Symbol
Min.
Limit Values
Typ.2) Max.
Unit Test Conditions
and Instructions
5.4.2.1 OUTx Short
Sense Time
tss
30
60
90
μs
50 - 50 Threshold
5.4.2.2 OUTx Short
Refresh Time
tref
3
14
24
ms
50 - 50 Threshold
5.4.2.3 OUTx Short
circuit/
Overcurrent
Fault
Threshold
VVSHTOCT 2.0
2.5
3.0
Vdc
VREF = 2.5 V
5.4.2.4 OUTx Current
Limit
Idlim
5.0
6.0
A
VBAT = 14 V;
VDD = 5V;
3.0
output on
1) Positive current flow is into the device.
2) TJ = 25 °C
Data Sheet
20
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
5.4.3
Open Load / Short to Ground Detection
The OLSG fault bit is set under the following conditions.
Operating Condition #1
The average current command is > 50 mA (with 1 Ω sense resistor) and the low-side
driver is ON (solenoid current is increasing).
The OLSG (open load/short to ground) fault bit will be set if the low-side transistor
remains on for a time greater than the on state open sense time (“Electrical
Characteristics” on Page 23, Item 5.4.3.3).
Operating Condition #2
The average current command is > 50 mA (with 1 Ω sense resistor) and the low-side
driver is OFF.
The OLSG fault bit is set if the voltage on the NEGx pin is less than the NEG pin OLSG
threshold voltage (“Electrical Characteristics” on Page 23, Item 5.4.3.6) for a time
greater than the NEG pin OLSG delay time (“Electrical Characteristics” on Page 23,
Item 5.4.3.5).
Operating Condition #3
The average current command is < 50 mA (with a 1 Ω sense resistor) and the fault typing
bit = 0.
The OLSG (open load/short to ground) fault bit will be set if the POS pin voltage is less
than the off state open load threshold (“Electrical Characteristics” on Page 20,
Item 5.4.2.3) for longer than the off state open load sense time (“Electrical
Characteristics” on Page 23, Item 5.4.3.4) or the NEG pin is less than the NEG pin
OLSG threshold voltage (“Electrical Characteristics” on Page 23, Item 5.4.3.6) for a
time greater than the NEG pin OLSG delay time (“Electrical Characteristics” on
Page 23, Item 5.4.3.5). A pull-down current (“Electrical Characteristics” on Page 23,
Item 5.4.3.1) will be activated between the POS pin and ground when the Fault Typing
bit = 0.
Operating Condition #4
The average current command is < 50 mA (with a 1 Ω sense resistor) and the fault typing
bit = 1.
The OLSG fault bit will be set when the voltage on the pin POSx is below the off state
open load threshold (“Electrical Characteristics” on Page 20, Item 5.4.2.3) for the a
time greater than tos(off) (“Electrical Characteristics” on Page 23, Item 5.4.3.4) or the
NEG pin is less than the NEG pin OLSG threshold voltage (“Electrical Characteristics”
on Page 23, Item 5.4.3.6) for a time greater than the NEG pin OLSG delay time
Data Sheet
21
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
(“Electrical Characteristics” on Page 23, Item 5.4.3.5). A pull-up current (“Electrical
Characteristics” on Page 23, Item 5.4.3.2) will be activated between VDD and the POS
pin when the Fault Typing bit = 1.
Distinguishing between Open Load and Short to Ground Faults
When an Open Load/Short to Ground is flagged, to distinguish between Open Load and
Short-To-Ground, a general configuration command word must be sent three times to
the appropriate channel with the fault typing bit set, and the average current must be
programmed to zero. Check the OL/SG fault bit from the third write. A ‘0’ signifies Open
Load, ‘1’ signifies Short-To-Ground. A short to ground will still be flagged for 0 mA
command current. Note that setting the fault typing bit under both normal & fault
conditions does not change the status of the output or the current flowing.
The fault typing bit enables a 40 μA pull-up current on the POS pin when high, and
enables a 40 μA pull-down current on the POS pin when low.
Data Sheet
22
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Electrical Characteristics 1)
Tj = -40 to 150 °C; VBAT = 9 V to 18 V; VDD = 4.75 V to 5.25 V
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Max.
Unit Test Conditions
and Instructions
5.4.3.1 POS Open detect IOL
current
20
40
60
μA
Fault typing bit = 0,
Zero Current
5.4.3.2 POS Load short to ISG
ground detect
-60
-40
-20
μA
Fault typing bit = 1,
Zero Current,
POS = NEG = 2 V
tos(on)
5.4.3.3 OUTx On-State
open sense time –
POS pin
6
12
24
ms
50 - 50 Threshold3)
tos(off)
5.4.3.4 OUTx Off-State
open sense time –
POS pin
30
60
90
μs
50 - 50 Threshold3)
5.4.3.5 NEGx Open load / TOLSG_N
(off)
short to ground
filter time – NEG
pin
30
60
90
μs
–
5.4.3.6 NEGx Open load / VOLSG_N
short to ground
detection
threshold – NEG
pin
2.0
2.8
3.6
V
–
2)
1) Positive current flow is into the device.
2) TJ = 25 °C
3) Not subject to production test, tested by scanpath.
Data Sheet
23
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Diagnostics Timing Diagrams
OPEN CIRCUIT / SHORT TO GROUND FAULT - OCCURS & CLEARS WHILE ON
VPOS - VNEG
on
Output transistor
state
off
open
Load State
tos(on)
ok
OL/SGx
fault state
t < tos (on)
OL/SGx latched
fault state
CSB
G.C.
cmd
MOSI
G.C.
cmd
G.C.
cmd
G.C.
cmd
G.C.
response
G.C.
response
G.C.
response
OLSG=0
OLSG=0
OLSG=1
G.C.
cmd
G.C.
response
G.C.
response
OLSG=1
OLSG=0
MISO
The Latched Fault State is sampled and stored in the SPI transmit register at the points marked with “
Figure 8
“.
Open Load / Short to Ground Fault - Channel On
OPEN LOAD / LOAD SHORTED TO GROUND FAULT - OCCURS WHILE ON THEN
CHANNEL IS TURNED OFF
V POSx -VNEGx
on
LS-Switchx
state
Load State
off
open
ok
tos(on) = 12ms
OL/SGx
fault state
tos(off)=60µs
OL/SGx latched
fault state
CSB
G.C.
cmd
G.C.
cmd
G.C.
cmd
A.C. cmd
Iav=0ma
MOSI
G.C.
response
G.C.
response
OLSG=0
OLSG=1
A.C.
G.C.
response response
MISO
The Latched Fault State is sampled and stored in the SPI transmit register at the points marked with “
Figure 9
Data Sheet
EDG=1
OLSG=1
“.
Open Load / Short to Ground - Channel On Then Turned Off
24
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
OPEN CIRCUIT FAULT - OCCURS & CLEARS WHILE OFF
14V
V POSx
dVPOS/dt
2.5V
t < tos (off)
open
Load State
ok
tos (off)
OL/SGx
fault state
OL/SGx latched
fault state
CSB
G.C.
cmd
G.C.
cmd
G.C.
cmd
MOSI
G.C.
response
G.C.
response
G.C.
response
OLSG=1
OLSG=0
MISO
OLSG=0
The Latched Fault State is sampled and stored in the SPI transmit register at the points marked with “
Figure 10
“.
Open Load Short to Ground - Channel Off
d V POS
– ( i OL – i Rrecirc )
----------------- = ---------------------------------------------------------dt
( C POS + C NEG + C OUT )
(1)
iOL = open load detection pull down current (5.4.3.1)
iRrecirc = reverse leakage current of recirculation diode
CPOS = external capacitance on the POS pin
CNEG = external capacitance of the NEG pin
COUT = external capacitance on the OUT pin
Data Sheet
25
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
OPEN CIRCUIT FAULT - OCCURS WHILE OFF THEN TURNED ON
14V
VPOSx
2.5V
open
Load State
ok
tos (off)
tos(on) = 12ms
OL/SGx
fault state
OL/SGx latched
fault state
CSB
G. C.
cmd
G. C.
cmd
A.C. cmd
Iav>50ma
G. C.
cmd
MOSI
G. C.
response
G.C.
response
A.C.
response
OLSG=0
OLSG=1
EDG=1
G. C.
response
MISO
The Latched Faul t State i s sampl ed and stored in the SPI transmit regi ster at the points marked with “
Figure 11
Data Sheet
OLSG=1
“ .
Open Load / Short to Ground - Channel Off Then Turned On
26
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
OPEN CIRCUIT FAULT - OCCURS WHILE OFF THEN OPEN LOAD / SHORT TO GROUND
TEST IS PERFORMED
14V
V POSx
dV POS/dt
2.5V
open
Load State
ok
tos(off)
tos (off) tos(off)
OL/SGx
fault state
OL/SGx latched
fault state
CSB
MOSI
MISO
G.C.
cmd
G.C.
response
G.C.
response
OLSG=0
OLSG=1
The Latched Fault State is sampled and stored in the SPI transmit register at the points marked with “
Figure 12
G.C.
cmd
FT=1
G.C.
cmd
FT=1
G.C.
cmd
G.C.
cmd
FT=1
G.C.
G.C.
G.C.
response response response
OLSG=1 OLSG=1 OLSG=0
“.
Open Load - Fault Type Bit = 1 Test
d V POS
– ( i SG – i Rrecirc )
----------------- = ---------------------------------------------------------dt
( C POS + C NEG + C OUT )
(2)
iSG = short to ground detection pull up current (5.4.3.2)
iRrecirc = reverse leakage current of recirculation diode
CPOS = external capacitance on the POS pin
CNEG = external capacitance of the NEG pin
COUT = external capacitance on the OUT pin
Data Sheet
27
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
SHORT TO GROUND FAULT - OCCURS & CLEARS WHILE OFF
14V
VPOSx
2.5V
t < tos (off)
Short to
GND
Load
State
ok
tos(off)
tos(off)
OL/SGx
fault state
OL/SGx
latched
fault state
CSB
MOSI
G.C.
cmd
G.C.
cmd
FT=1
G.C.
cmd
G.C.
cmd
FT=1
G.C.
cmd
FT=1
G.C.
cmd
G.C.
cmd
G.C.
response
G.C.
response
G.C.
G.C.
G.C.
response response response
G.C.
G.C.
response response
OLSG=0
OLSG=1
OLSG=1 OLSG=1 OLS G=1
OLSG=1 OLSG=0
MISO
The Latched Fault State is sampled and stored in the SPI transmit register at the points marked with “
Figure 13
5.4.4
“.
Short to Ground Fault Type Bit = 1 Test
Thermal Shutdown
Each output transistor includes an independent thermal shutdown circuit. When the
temperature of the output transistor exceeds a threshold value (see table below,
Item 5.4.4.1), the output transistor will be turned off and a fault bit will be set for the failed
channel. The transistor will remain off until the local transistor temperature has
decreased by the thermal hysteresis value (see table below, Item 5.4.4.2), the output
transistor will then turn on again.
Thermal shutdown faults are channel specific.
Note: A thermal fault is latched until read via the MISO return word.
Data Sheet
28
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
^
OVER-TEMPERATURE FAULT
VP OSx - VNEGx
on
LS-Switchx
state
off
OT shutdown
Sensor x temp
OT shutdown OT hyst
OTMPx
fault state
OTMPx latched
fault state
CSB
G.C.
cmd
G.C.
cmd
G.C.
cmd
G.C.
cmd
MOSI
MISO
G.C.
response
G.C.
response
G.C.
response
G.C.
response
OTMP=0
OTMP=1
OTMP=1
OTMP=0
The Latched Fault State is sampled and stored in the SPI transmit register at the points marked with “
Figure 14
“.
Overtemperature Shutdown with Restart
Electrical Characteristics 1)
Tj = -40 to 150 °C; VBAT = 9 V to 18 V; VDD = 4.75 V to 5.25 V
Pos.
Parameter
Symbol
Min. Typ.2) Max.
Limit Values
Unit Test Conditions
and Instructions
5.4.4.1 OUTx
Overtemperature
shutdown threshold
OTsd
160
–
190
°C
3)
5.4.4.2 OUTx
Overtemperature
hysteresis
OThys
–
10
–
°C
3)
1) Positive current flow is into the device.
2) TJ = 25 °C
3) Not subject to production test, specified by design.
Data Sheet
29
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
5.5
Current Control
5.5.1
Hysteretic Current Control
The TLE 7241E device uses a hysteretic control method to regulate the solenoid current.
The output transistor is toggled on and off based on the measured value of the solenoid
current. The solenoid current is measured at the pins POSx and NEGx which are
connected to an external current sense resistor. The device calculates an upper and
lower switch point based on the input commands from the microprocessor. The output
transistor is turned on until the upper threshold is reached, and then turned off until the
lower threshold is reached. See Figure 15 for an example of the solenoid current
waveform. In this example, the dither is disabled.
The average switch point
Upper switch pt + Lower switch pt
SP AVG = ----------------------------------------------------------------------------------------
(3)
2
is determined by the contents of the average current command register.
The relationship is:
register value
- × 1230 mV
SP AVG = ----------------------------------10
(4)
2
The hysteresis value can be programmed to a value from 40 mVpp to 110 mVpp in steps
of 10 mVpp.
Upper Switch Point
Hysteresis
Lower Switch Point
Figure 15
Data Sheet
Output Current Waveform - No Dither
30
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Note that the switching frequency and duty cycle of the output transistor are not directly
controlled by the TLE 7241E device and are dependent on the characteristics of the
solenoid (inductance, resistance, etc.) and the solenoid supply voltage.
Electrical Characteristics 1)
Tj = -40 to 150 °C; VBAT = 9 V to 18 V; VDD = 4.75 V to 5.25 V
Pos.
Parameter
3)
Symbol
Limit Values
Min.
Typ.
Unit Test Conditions and
Instructions
Max.
2)
5.5.1.1
OUTx
Blanking
time 1 (see
Figure 16,
Figure 17)
Tblank1
–
5
–
μs
Slew Rate Register =
0 or 1.
From enable/disable
of lowside output
transistor to enabling
of Vpos comparator.
5.5.1.2
OUTx3)
Blanking
time 2 (see
Figure 16,
Figure 17)
Tblank2
–
15
–
μs
Slew Rate Register =
2 or 3.
From enable/disable
of output transistor to
enabling of Vpos
comparator.
5.5.1.3
OUTx4)5)
dVOUT =
200 mV
Iavg register
= 0A6H
dVOUT 200 -5%
200
+5%
mV
Output current
IOUT = 200 mA with
Rsense = 1.0 Ω
REF = 2.5V
5.5.1.4
OUTx4)5)
dVOUT =
400 mV
Iavg register
= 14DH
dVOUT 400 -2.5 % 400
2.5% mV
Output current
IOUT = 400 mA with
Rsense = 1.0 Ω
REF = 2.5V
5.5.1.5
OUTx4)5)
dVOUT =
600 mV
Iavg register
= 1F3H
dVOUT 600 -2%
600
2%
mV
Output current
IOUT = 600 mA with
Rsense = 1.0 Ω
REF = 2.5V
5.5.1.6
OUTx4)5)
dVOUT =
800 mV
Iavg register
= 29AH
dVOUT 800 -2%
800
2%
mV
Output current
IOUT = 800 mA with
Rsense = 1.0 Ω
REF = 2.5V
Data Sheet
31
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Electrical Characteristics (cont’d)1)
Tj = -40 to 150 °C; VBAT = 9 V to 18 V; VDD = 4.75 V to 5.25 V
Pos.
Parameter
Min.
Typ.
Unit Test Conditions and
Instructions
Max.
5.5.1.7
OUTx4)5)
dVOUT =
1000 mV
Iavg register
= 340H
dVOUT1000 -3%
1000
3%
mV
Output current
IOUT = 1000 mA with
Rsense = 1.0 Ω
REF = 2.5V
5.5.1.8
OUTx3)5)
Switching
hysteresis
40
Sw Hyst.
register = 0
DAC counts
= ±17
dVhyst40
29.6
39.6
49.6
mVpp
40 mV programmed
setting
Input Command >
200 mV
REF = 2.5V
5.5.1.9
OUTx3)5)
Switching
hysteresis
50
Sw Hyst.
register = 1
DAC counts
= ±21
dVhyst50
40.4
50.4
60.4
mVpp
50 mV programmed
setting
Input Command >
200 mV
REF = 2.5V
5.5.1.10 OUTx3)5)
Switching
hysteresis
60
Sw Hyst.
register = 2
DAC counts
= ±25
dVhyst60
50.1
60.1
70.1
mVpp
60 mV programmed
setting
Input Command >
200 mV
REF = 2.5V
Data Sheet
Symbol
Limit Values
2)
32
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Electrical Characteristics (cont’d)1)
Tj = -40 to 150 °C; VBAT = 9 V to 18 V; VDD = 4.75 V to 5.25 V
Pos.
Parameter
Min.
Typ.
Unit Test Conditions and
Instructions
Max.
5.5.1.11 OUTx3)5)
Switching
hysteresis
70
Sw Hyst.
register = 3
DAC counts
= ±29
dVhyst70
59.7
69.7
79.7
mVpp
70 mV programmed
setting
Input Command >
200 mV
REF = 2.5V
5.5.1.12 OUTx3)5)
Switching
hysteresis
80
Sw Hyst.
register = 4
DAC counts
= ±33
dVhyst80
70.5
80.5
90.5
mVpp
80 mV programmed
setting
Input Command >
200 mV
REF = 2.5V
5.5.1.13 OUTx3)5)
Switching
hysteresis
90
Sw Hyst.
register = 5
DAC counts
= ±37
dVhyst90
80.1
90.1
101.1
mVpp
90 mV programmed
setting
Input Command >
200 mV
REF = 2.5V
Data Sheet
Symbol
Limit Values
2)
33
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Electrical Characteristics (cont’d)1)
Tj = -40 to 150 °C; VBAT = 9 V to 18 V; VDD = 4.75 V to 5.25 V
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Unit Test Conditions and
Instructions
Max.
5.5.1.14 OUTx3)5)
Switching
hysteresis
100
Sw Hyst.
register = 6
DAC counts
= ±42
dVhyst100
88.7
99.7
109.7
mVpp
100 mV programmed
setting
Input Command >
200 mV
REF = 2.5V
5.5.1.15 OUTx3)5)
Switching
hysteresis
110
Sw Hyst.
register = 7
DAC counts
= ±46
dVhyst110
100.5
110.5 120.5
mVpp
110 mV programmed
setting
Input Command >
200 mV
REF = 2.5V
2)
1) Positive current flow is into the device.
2) TJ = 25 °C
3) Not subject to production test, specified by design.
4) Electrical Distributions must be performed on this parameter as defined in the AEC-Q100 Specification Table 2
test 27.
5) When the internal reference is used (REF pin grounded), the minimum and maximum limits must be increased
by +/- 2%
Data Sheet
34
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Figure 16
Data Sheet
Blanking Time (output transistor turning off)
35
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Figure 17
Data Sheet
Blanking Time (output transistor turning on)
36
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
5.5.2
Dither Control and Operation
The dither waveform is generated digitally within the TLE 7241E by periodically adding
or subtracting from the average current command register contents. Figure 18 is an
illustration of the Dither Waveform.
Dither
Amplitude
Dither
Period
Figure 18
Dither Waveform
The Dither Frequency can be programmed over a range of 41 Hz to 1 kHz.
The Dither Amplitude can be programmed over a range from 12.5 mVpp to 390 mVpp.
The Dither waveform can be disabled by clearing both the dither amplitude and dither
frequency fields in the Dither Configuration Register.
Note: Programming the Dither Frequency field to zero when the Dither Amplitude is
programmed to a non-zero value will result in incorrect current regulation.
In some applications, an enhanced dither waveform is required. The enhanced dither
waveform will hold the lower switch point at the minimum value (lowest lower switch point
within the dither period) until the solenoid current crosses the lower switch point. This
mode may be useful when the decay time of the solenoid current is slower than the slope
of the dither waveform. See Figure 19 for an illustration of the enhanced dither
waveform. Enhanced Dither can be enabled by setting a bit in the SPI Dither
Configuration word.
Data Sheet
37
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Figure 19
Enhanced Dither Waveform
When the enhanced dither bit is selected, the dither period will only be extended if the
lower switch threshold is not crossed during the entire negative slope portion of the dither
waveform.
Example see Figure 20.
The first dither period is not extended since the lower threshold was crossed during the
negative slope portion of the dither waveform, the following two dither periods are
extended since the low switch point was not crossed during the negative slope portion
of the waveform.
Data Sheet
38
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Figure 20
Enhanced Dither Waveform
The extension of the dither period will be terminated when the lower switch threshold is
crossed or when the extension time has exceeded the enhanced dither time out period
(minimum 15 ms) - see Figure 21.
Data Sheet
39
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Enhanced Dither
Time Out
Figure 21
Data Sheet
Enhanced Dither Time-out
40
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Electrical Characteristics 1)
Tj = -40 to 150 °C; VBAT = 9 V to 18 V; VDD = 4.75 V to 5.25 V
Pos.
Parameter
Min.
Typ.
Max.
Unit Test Conditions
and Instructions
15
–
25
ms
–
OUTx Dither3)4) IDAP-P
Amplitude Reg
= 04H
40.5
50
60.5
mVpp
50 mV setting
programmed
REF = 2.5V
5.5.2.3
OUTx Dither3)4) IDAP-P
Amplitude Reg
= 08H
90.9
101
110.9
mVpp
100 mV setting
programmed
REF = 2.5V
5.5.2.4
OUTx Dither3)4) IDAP-P
Amplitude Reg
= 0CH
141.4 151
161.4
mVpp
150 mV setting
programmed
REF = 2.5V
5.5.2.5
OUTx Dither3)4) IDAP-P
Amplitude Reg
= 10H
191.8 202
211.8
mVpp
200 mV setting
programmed
REF = 2.5V
5.5.2.6
OUTx Dither3)4) IDAP-P
Amplitude Reg
= 14H
242.3 252
262.3
mVpp
250 mV setting
programmed
REF = 2.5V
5.5.2.7
OUTx Dither3)4) IDAP-P
Amplitude Reg
= 18H
292.7 303
312.7
mVpp
300 mV setting
programmed
REF = 2.5V
5.5.2.8
OUTx Dither3)4) IDAP-P
Amplitude Reg
= 1CH
343.2 353
363.2
mVpp
350 mV setting
programmed
REF = 2.5V
5.5.2.9
OUTx Dither
fdither
Frequency Reg
= 34H
-15% 100
+15%
Hz
100 Hz setting
programmed3)
5.5.2.10 OUTx Dither
fdither
Frequency Reg
= 23H
-15% 150
+15%
Hz
150 Hz setting
programmed3)
5.5.2.11 OUTx Dither
fdither
Frequency Reg
= 1AH
-15% 200
+15%
Hz
200 Hz setting
programmed3)
5.5.2.1
OUTx3)
Enhanced
Dither time out
5.5.2.2
Data Sheet
Symbol
Tout(eD)
Limit Values
41
2)
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Electrical Characteristics (cont’d)1)
Tj = -40 to 150 °C; VBAT = 9 V to 18 V; VDD = 4.75 V to 5.25 V
Pos.
Parameter
Symbol
Limit Values
Max.
Unit Test Conditions
and Instructions
5.5.2.12 OUTx Dither
fdither
Frequency Reg
= 15H
-15% 250
+15%
Hz
250 Hz setting
programmed3)
5.5.2.13 OUTx Dither
fdither
Frequency Reg
= 11H
-15% 308
+15%
Hz
300 Hz setting
programmed3)
5.5.2.14 OUTx Dither
fdither
Frequency Reg
= 0FH
-15% 350
+15%
Hz
350 Hz setting
programmed3)
5.5.2.15 OUTx Dither
fdither
Frequency Reg
= 0DH
-15% 403
+15%
Hz
400 Hz setting
programmed3)
5.5.2.16 OUTx Dither
fdither
Frequency Reg
= 0CH
-15% 437
+15%
Hz
450 Hz setting
programmed3)
5.5.2.17 OUTx Dither
fdither
Frequency Reg
= 0AH
-15% 524
+15%
Hz
500 Hz setting
programmed3)
Min.
2)
Typ.
1) Positive current flow is into the device.
2) TJ = 25 °C
3) Not subject to production test, specified by design
4) When the internal reference is used (REF pin grounded), the minimum and maximum limits must be increased
by +/- 2%
Data Sheet
42
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
5.5.3
Input Command Out of Range / Dither Clipping
If an average current command between 000H and 029H inclusive (0 mA and 50 mA with
a 1 Ω sense resistor) is received, then the average current will be set to 000 (channel
disabled) and the COR (command out of range) error bit will be set. The average current
set point verification reported in the MISO word, however, will be the actual average
current command, not 000H.
If an average current command greater than 3D6H (1.18 A with a 1 Ω sense resistor) is
received, then the average current will be set to 3D6H, and the COR error bit will be set.
The average current set point verification reported in the MISO word, however, will be
the actual commanded current, not 3D6H.
The minimum limit for the lower switch point is 19H (30 mA with a 1 Ω sense resistor) and
the maximum limit for the upper switch point is 3FFH (1.23 A with a 1 Ω sense resistor).
If the microprocessor sets the average current command and the switching hysteresis
setting to values that result in switch points beyond these limits, the TLE 7241E will clip
the switch point to 19H or 3FFH and the COR error bit will be set.
If the average current set point and the switching hysteresis setting do not result in switch
points outside the usable range (19H to 3FFH), but dither is enabled and the dither
amplitude setting results in an out of range switch point, then the DCLP fault bit will be
set. The fault bit is set when the calculated switch point (average current + hysteresis +
dither) exceeds the upper or lower limit, not when the registers are programmed.
When the DCLP fault bit is set, the TLE 7241E will enter “symmetrical dither clipping”
mode within one dither cycle after the clipping occurs. During symmetrical dither clipping
mode, the device maintains the average current set-point by reducing the amplitude of
the dither waveform. Up to one full dither cycle may be required to exit the “symmetrical
dither clipping mode” and resume normal operation when the registers are reprogrammed. See Figure 22 for an example of the dither clipping waveform.
Data Sheet
43
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Figure 22
5.5.4
Symmetrical Dither Clipping
Error Correction Registers / Average Switch Threshold
Trimming
The average switch threshold of each channel is trimmed at wafer test under the
following operating conditions: Tamb = 25 °C, VBAT = 14 V, Vcc = 5.0 V, VREF = 2.5 V,
average current command = 299H (800 mA with 1 Ω sense resistor), dither = off,
hysteresis = 80 mVpp.
The TLE 7241E includes 5 error correction registers for each channel. The registers are
written during room temperature wafer testing. After the device has been trimmed, the
average of the upper and lower switch thresholds is measured at 5 average current
operating points. The difference in the measured value and the ideal value is
permanently stored in the 5 error registers. The contents of the error correction register
are an 8 bit signed value that must be added to the ideal current command to minimize
the average current error.
Data Sheet
44
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Error Correction
Register #
Corresponding Average
Current Register Setting
(Hex)
Corresponding Ideal Average
Current with a 1 Ω ext. Sense
Resistor
0
0A6
200 mA
1
14D
400 mA
2
1F3
600 mA
3
29A
800 mA
4
340
1000 mA
For example:
•
•
•
•
Measured average switch threshold at 0A6H during Infineon production test = 207 mV
Ideal average switch threshold at 0A6H = 199.6 mV
Error Correction = -7.4 mV / (1.2 mV/count) = -6 counts
The contents of the error correction register are -6 or FAH
The contents of the error correction registers can be used by the application
microcontroller to improve the accuracy of the average switch points. In the above
example, when the microcontroller requests an average current of 200 mA (assuming a
1 Ω sense resistor), the command sent should be 0A6 (ideal) - 6 (error correction) = 0A0.
For current commands between the 5 measured operating points, the microprocessor
can use linear (or more complex) interpolation to calculate the appropriate error
correction values.
Data Sheet
45
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
5.6
SPI Command and Diagnosis Structure
5.6.1
SPI Signal Description
The SPI serial interface has the following features:
•
•
•
•
Full duplex, 4-wire synchronous communication
Slave mode operation only
Fixed SCK polarity and phase requirements
Fixed 16-bit command word
SCK operation up to 5.0 MHz (the maximum clock frequency may be limited to a value
less than 5.0 MHz by the minimum required SO setup time of the SPI master device and
by the total capacitive load on the SO bus node. With a SO load capacitance of 200 pF
the maximum SPI frequency is 3.2 MHz).
The TLE 7241E IC Serial Peripheral Interface (SPI) is used to transmit and receive data
synchronously with the master SPI device. Communication occurs over a full-duplex,
four wire SPI bus. The TLE 7241E IC will operate only as a slave device to the master,
and requires four external pins; SI, SO, SCK, and CSB. All words are 16 bits long and
sent MSB first. The device is selected when the CSB signal is asserted (low). The master
will then send 16 (or a multiple of 16) clock pulses over the SCK pin. The TLE 7241E will
simultaneously turn on the serial output SO and return the MISO return bits. When
receiving, valid data is latched on the rising edge of each SCK pulse. The serial output
data is available on the rising edge of SCK, and transitions on the falling edge of SCK.
See Figure 23 for SPI timing diagram.
The number of clock cycles occurring on the pin SCK while the CSB pin is asserted low
must be 16 or an integer multiple of 16, otherwise the SPI MOSI data will be ignored.
The fault registers are double buffered. The first buffer layer will latch a fault at the time
the fault is detected. This inner layer buffer is cleared when the fault condition is no
longer present and the fault bit has been communicated to the microprocessor by a
MISO response. The second layer buffer will latch the output of the inner layer buffer
whenever the CSB pin transitions from low to high. The output of this buffer layer is
transferred to the MISO shift register one SPI frame after the corresponding MOSI
command has been received from the microcontroller.
The MISO data word value of FFFFH is never generated by the TLE 7241E, and will
indicate a Hi-Z state on the SO pin when an external pull-up resistor to VDD is used. This
feature can be used to detect an open connection between the SO pin of the TLE 7241 E
and the microcontroller.
All undefined MOSI command words will be ignored by the TLE 7241E, and the MISO
response during the next SPI frame will be undefined (but not FFFFH).
Note: The OL/SG fault bit is latched into the MISO register, and then updated within tdly
(≤ 1.7 μs) after the rising edge of the CSB signal when the received MOSI word is
an General Configuration command.
Data Sheet
46
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Figure 23
Data Sheet
SPI Timing Diagram
47
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Electrical Characteristics 1)
Tj = -40 to 150 °C; VBAT = 9 V to 18 V; VDD = 4.75 V to 5.25 V
Pos.
Parameter
Symbol
Limit Values
Min. Typ.
5.6.1.1
CSB Input Bias ICSB
Current
ISI
5.6.1.2
SI Input Pulldown Current
5.6.1.3
SCK Input Pull- ISCK
down Current
5.6.1.4
SO Tri-state
Leakage
Current
5.6.1.5
SI, SCK, CSB, CIN
DEFAULT
Input
Capacitance
ISOT
-25
-10
2)
Max.
Unit Test Conditions
and Instructions
-5
μA
VCSB = 0 V
Pull-up source is
from pin VSO
5
10
25
μA
VSI = VVSO
5
10
25
μA
VSCK = VVSO
-10
0
10
μA
CSB = 0.7 VDD
0 V < VSO < VVSO
–
–
20
pF
0 V < VSO < 5.25 V
3)
5.6.1.6
SO Tri-state
Output
Capacitance
CSOT
–
–
20
pF
5.6.1.7
SCK Serial
Clock
Frequency
fSCK
–
–
3.2
MHz SPI clock
SPI communications
tested at CL = 200 pF
on the SO pin,
Tsu1 = 40 ns
5.6.1.8
SCK Clock
Pulse High
Time
Twh
85
–
–
ns
SCK Clock
Pulse Low
Time
Twl
85
5.6.1.9
Data Sheet
0 V < VSO < 5.25 V
3)
fSCK = 3.2 MHz,
SCK = 2 V to 2 V
(see Figure 23)
–
–
ns
fSCK = 3.2 MHz,
SCK = 0.8 V to 0.8 V
(see Figure 23)
48
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Electrical Characteristics (cont’d)1)
Tj = -40 to 150 °C; VBAT = 9 V to 18 V; VDD = 4.75 V to 5.25 V
Pos.
Parameter
Symbol
Limit Values
Max.
Unit Test Conditions
and Instructions
5.6.1.10 SO, CSB SO
Pin Enable/
Disable
Tsoen,
Tsodis
–
–
80
ns
CSB = 2.0 V to SO =
0.8 V/2.0 V, 10K ext.
SO pull-up (see
Figure 23) - enable
CSB = 0.8 V to SO
hi-Z, 10K ext. SO
pull-up (see
Figure 23) - disable
5.6.1.11 SO, SCK3)
Output Data
Setup Time,
SO to SCK
Rising Edge
Tsu1
80
–
–
ns
Required setup time
by microprocessor
equivalent to Twl Tvalid
SO = 0.8 V/2.0 V to
SCK = 0.8 V
(see Figure 23)
5.6.1.12 SO, SCK3)
Th1
Output Data
Hold Time, SO
Hold After SCK
Rising Edge
150
–
–
ns
Required hold time
by microprocessor
equivalent to Twh +
Tvalid - Trso/Tfso
SCK = 2.0 V to
SO = 0.8 V/2.0 V
(see Figure 23)
5.6.1.13 SI, SCK Input
Data Setup
Time, SI to
SCK Rising
Edge
Tsu2
20
–
–
ns
SI = 0.8 V/2.0 V to
SCK = 2.0 V at
3.2 MHz
(see Figure 23)
5.6.1.14 SI, SCK Input
Data Hold
Time, SI Hold
after SCK
Rising Edge
Th2
30
–
–
ns
SCK = 2.0 V to
SI = 0.8 V/2.0 V at
3.2 MHz
(see Figure 23)
5.6.1.15 SO Serial
Output
Rise/Fall Time
Trso/Tfso –
–
50
ns
Cld = 200 pF
Min. Typ.
Data Sheet
2)
(see Figure 23)
49
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Electrical Characteristics (cont’d)1)
Tj = -40 to 150 °C; VBAT = 9 V to 18 V; VDD = 4.75 V to 5.25 V
Pos.
Parameter
Symbol
Limit Values
Max.
Unit Test Conditions
and Instructions
5.6.1.16 SI, CSB, SCK
Serial Inputs
Rise/Fall Time
Trsi/Tfsi
–
–
25
ns
3)
5.6.1.17 CSB, SCK
CSB Falling
Edge to SCK
Rising Edge
Tlead
100
–
–
ns
CSB = 0.8 V to SCK
= 0.8 V (see
Figure 23)
5.6.1.18 CSB, SCK
SCK Falling
Edge to CSB
Rising Edge
Tlag
50
–
–
ns
SCK = 0.8 V to CSB
= 0.8 V
(see Figure 23)
5.6.1.19 SCK, SO
Falling Edge
SCK to SO
Data Valid
Data
Valid
–
–
80
ns
SCK = 0.8 V to SO
Data Valid, Cld =
200 pF at 3.2 MHz
(see Figure 23)
5.6.1.20 CSB3)
Sequential
Transfers
Xfer
Delay
1
–
–
μs
CSB = 2.0 V
(increasing) to CSB
= 2.0 V (decreasing).
IC will not require
more than maximum
time stated between
communications.
5.6.1.21 SCK, CSB
Tsck1
Falling edge of
SCK to falling
edge of CSB
20
–
–
ns
SCK = 0.8 V to CSB
= 2.0 V
(see Figure 23)
5.6.1.22 SCK, CSB
Rising edge of
CSB to rising
edge of SCK
10
–
–
ns
CSB = 2.0 V to SCK
= 0.8 V
(see Figure 23)
Min. Typ.
Data Sheet
Tsck2
50
2)
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Electrical Characteristics (cont’d)1)
Tj = -40 to 150 °C; VBAT = 9 V to 18 V; VDD = 4.75 V to 5.25 V
Pos.
Parameter
Symbol
Limit Values
Min. Typ.
2)
Max.
Unit Test Conditions
and Instructions
5.6.1.23 SCK
Number of
SCK pulses
while CSB low
(n is a positive
integer)
nSCK
16
n × 16 –
Pulses
–
5.6.1.24 CSB3)
MISO shift
register load
delay time
tdly
–
1.7
μs
CSB = 2.0 V
(increasing) to MISO
data loaded into shift
register (see
Figure 24)
–
1) Positive current flow is into the device.
2) TJ = 25 °C.
3) Not subject to production test, specified by design.
Tdly
Latched
Fault Bit
CSB
Figure 24
Data Sheet
Fault Bit Refresh Delay Time (tdly)
51
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
5.6.2
SPI Command Structure
Table 1
SPI Command Summary
Channel Instruction ID Command Type
MISO Response - Next
CSB Assertion
B15
B14
B13
0
0
0
Average Current Set Point CH#1
Average Current Verification
and Status - CH#1
0
0
1
Dither Configuration - CH#1
Dither Config Verification
CH#1
0
1
0
General Configuration CH#1
General Config Verification
CH#1
0
1
1
Read Register - CH#1
Register Contents - CH#1
1
0
0
Average Current Set Point CH#2
Average Current Verification
and Status - CH#2
1
0
1
Dither Configuration - CH#2
Dither Config Verification
CH#2
1
1
0
General Configuration CH#2
General Config Verification
CH#2
1
1
1
Read Register - CH#2
Register Contents - CH#2
Figure 25
B12
B11
B10
B9
B8
X
COR
X
DCLP
D9
D9
D8
D8
Dither clipping
X
EDG
Command out
of Range
0
0
Diagnostic Error
0
0
I average
CH
CH
Channel
MOSI
MISO
B13
B7
B6
I average
B14
Channel
B15
D7
D7
D6
D6
B5
B4
Average Current
Setpoint
D5
D4
D5
D4
B3
B2
B1
B0
D3
D3
D2
D2
D1
D1
D0
D0
Average Current
Setpoint
Average Current Set Point
MOSI
•
•
B12 - B10 NU: Not used, Default = 0 (40 mVpp)
B9 - B0: Average Current Set point, Average Current Set point setting (see Table 2),
Default = 0 (0 mA)
Data Sheet
52
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
MISO
•
•
•
•
B12 Diagnostic Error: = 1 if OL/SG = 1 or VSHT = 1 or OTMP = 1 (channel specific)
B11 Command out of Range: = 1 if the average current set point + the hysteresis
setting result in a switch point > 1.23 V or < 0.03 V
B10 Dither Clipping: = 1 if the dither setting, average current set point, and hysteresis
setting result in a switch point > 1.23 V or < 0.03 V
B9 - B0 Average Current Set point: Contents of the average current set point
command (non-clipped)
Table 2
Average Output Current Key (typical) - Partial Table
COR Hex d9 d8 d7 d6 d5 d4 d3 d2 d1 d0 Average
Switch
Point
[mV]
Load
Current
with 1 Ω
Sense
Resistor
[mA]
Load
Current
with
0.68 Ω
Sense
Resistor
[mA]
0
000 0
0
0
0
0
0
0
0
0
0
0.00
0.00
0.00
1
001 0
0
0
0
0
0
0
0
0
1
0.00
0.00
0.00
1
002 0
0
0
0
0
0
0
0
1
0
0.00
0.00
0.00
1
003 0
0
0
0
0
0
0
0
1
1
0.00
0.00
0.00
1
028 0
0
0
0
1
0
1
0
0
0
0.00
0.00
0.00
1
029 0
0
0
0
1
0
1
0
0
1
0.00
0.00
0.00
1)
02A 0
0
0
0
1
0
1
0
1
0
50.45
50.45
74.19
1)
02B 0
0
0
0
1
0
1
0
1
1
51.65
51.65
75.96
1)
02C 0
0
0
0
1
0
1
1
0
0
52.85
52.85
77.72
0A6 0
0
1
0
1
0
0
1
1
0
199.39
199.39
293.23
14D 0
1
0
1
0
0
1
1
0
1
399.99
399.99
588.22
1F3 0
1
1
1
1
1
0
0
1
1
599.38
599.38
881.45
29A 1
0
1
0
0
1
1
0
1
0
799.98
799.98
1176.44
…
…
0
…
0
…
0
…
0
…
Data Sheet
53
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Table 2
Average Output Current Key (typical) - Partial Table (cont’d)
COR Hex d9 d8 d7 d6 d5 d4 d3 d2 d1 d0 Average
Switch
Point
[mV]
Load
Current
with 1 Ω
Sense
Resistor
[mA]
Load
Current
with
0.68 Ω
Sense
Resistor
[mA]
0
340 1
1
0
1
0
0
0
0
0
0
999.38
999.38
1469.67
1)
3D3 1
1
1
1
0
1
0
0
1
1
1175.95
1175.95
1729.33
1)
3D4 1
1
1
1
0
1
0
1
0
0
1177.15
1177.15
1731.10
1)
3D5 1
1
1
1
0
1
0
1
0
1
1178.35
1178.35
1732.87
1)
3D6 1
1
1
1
0
1
0
1
1
0
1178.35
1178.35
1732.87
1
3D7 1
1
1
1
0
1
0
1
1
1
1178.35
1178.35
1732.87
1
3FC 1
1
1
1
1
1
1
1
0
0
1178.35
1178.35
1732.87
1
3FD 1
1
1
1
1
1
1
1
0
1
1178.35
1178.35
1732.87
1
3FE 1
1
1
1
1
1
1
1
1
0
1178.35
1178.35
1732.87
1
3FF 1
1
1
1
1
1
1
1
1
1
1178.35
1178.35
1732.87
…
…
1) COR state dependent on the switching hysteresis value.
register value
- × 1230 mV
SP AVG = ----------------------------------10
(5)
register value 1230
- × ---------------- mA
I AVG = ----------------------------------10
R sense
2
(6)
2
Note: When a new average current command or hysteresis setting is received, the new
data is loaded immediately with the rising edge of CSB (not synchronized with the
dither waveform). The dither waveform is not reset when the new average current
command or hysteresis setting is received.
Data Sheet
54
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Figure 26
B9
DA4
DA4
DA3
DA3
DA2
DA2
B6
B5
B4
B3
DA1
DA1
DA0
DA0
DF6
DF6
DF5
DF5
DF4
DF4
DF3
DF3
B2
B1
B0
DF2
DF2
DF1
DF1
DF0
DF0
Dither Frequency
ED
ED
B7
Dither Amplitude
1
1
B8
Dither Frequency
B10
Dither Amplitude
B11
Enhanced Dither
B12
Enhanced
Dither
0
0
Dither
Configuration
CH
CH
Channel
MOSI
MISO
B13
Dither
Configuration
B14
Channel
B15
Dither Programming
MOSI
•
•
•
B12 Enhanced Dither: Enables the enhanced dither feature when ED = 1,
Default = 0 (disabled)
B11 - B7 Dither Amplitude: Setting for the amplitude of the dither waveform (see
Table 3), Default = 00H (Dither Disabled)
B6 - B0 Dither Frequency: Setting for the frequency of the dither waveform (see
Table 4), Default = 00H (Dither Disabled)
Note: To disable the dither waveform, both the amplitude and frequency fields must be
set to zero. These fields must both be cleared in the same SPI communication frame.
Programming the frequency to zero when the amplitude is set to a non-zero value will
result in incorrect current regulation.
MISO
•
•
•
B12 Enhanced Dither: Contents of the ED bit of the dither configuration register
B11 - B7 Dither Amplitude: Contents of the dither amplitude register
(shadow register)
B6 - B0 Dither Frequency: Contents of the dither frequency register (shadow register)
Note: When a Dither Configuration command is received which changes either the dither
frequency or the dither amplitude settings, the new dither waveform
characteristics will take effect at the beginning of the next dither period.
Data Sheet
55
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Figure 27
Data Sheet
Start of Dither Cycle
56
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Table 3
Ideal Dither Amplitude Key (typical)
Hex DA4 DA3 DA2 DA1 DA0 Dither
Dither
Amplitude Amplitude with
[mVpp]
1 Ω sense
resistor [mApp]
Dither
Amplitude with
0.68 Ω sense
resistor [mApp]
00
0
0
0
0
0
0.0
0.00
0.00
01
0
0
0
0
1
12.6
12.6
18.5
02
0
0
0
1
0
25.2
25.2
37.1
03
0
0
0
1
1
37.8
37.8
55.6
04
0
0
1
0
0
50.5
50.45
74.19
05
0
0
1
0
1
63.1
63.06
92.74
06
0
0
1
1
0
75.7
75.68
111.29
07
0
0
1
1
1
88.3
88.29
129.84
08
0
1
0
0
0
100.9
100.90
148.38
09
0
1
0
0
1
113.5
113.51
166.93
0A
0
1
0
1
0
126.1
126.13
185.48
0B
0
1
0
1
1
138.7
138.74
204.03
0C
0
1
1
0
0
151.4
151.35
222.58
0D
0
1
1
0
1
164.0
163.96
241.12
0E
0
1
1
1
0
176.6
176.58
259.67
0F
0
1
1
1
1
189.2
189.19
278.22
10
1
0
0
0
0
201.8
201.80
296.77
11
1
0
0
0
1
214.4
214.41
315.32
12
1
0
0
1
0
227.0
227.03
333.86
13
1
0
0
1
1
239.6
239.64
352.41
14
1
0
1
0
0
252.3
252.25
370.96
15
1
0
1
0
1
264.9
264.86
389.51
16
1
0
1
1
0
277.5
277.48
408.05
17
1
0
1
1
1
290.1
290.09
426.60
18
1
1
0
0
0
302.7
302.70
445.15
19
1
1
0
0
1
315.3
315.32
463.70
1A
1
1
0
1
0
327.9
327.93
482.25
1B
1
1
0
1
1
340.5
340.54
500.79
Data Sheet
57
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Table 3
Ideal Dither Amplitude Key (typical)
Hex DA4 DA3 DA2 DA1 DA0 Dither
Dither
Amplitude Amplitude with
[mVpp]
1 Ω sense
resistor [mApp]
Dither
Amplitude with
0.68 Ω sense
resistor [mApp]
1C
1
1
1
0
0
353.2
353.15
519.34
1D
1
1
1
0
1
365.8
365.77
537.89
1E
1
1
1
1
0
378.4
378.38
556.44
1F
1
1
1
1
1
391.0
390.99
574.99
register value × 10.5
- × 1230 mVpp
V dithamp = ----------------------------------------------------10
(7)
register value × 10.5 --------------1230-×
I dithamp = ----------------------------------------------------mApp
10
R
sense
2
(8)
2
Table 4
Ideal Dither Frequency Key (typical)- Partial Table
Hex
DF6
DF5
DF4
DF3
DF2
DF1
DF0
Dither Frequency
00
0
0
0
0
0
0
0
0.0 Hz
01
0
0
0
0
0
0
1
5238.1 Hz
02
0
0
0
0
0
1
0
2619.0 Hz
03
0
0
0
0
0
1
1
1746.0 Hz
04
0
0
0
0
1
0
0
1309.5 Hz
05
0
0
0
0
1
0
1
1047.6 Hz
06
0
0
0
0
1
1
0
873.0 Hz
07
0
0
0
0
1
1
1
748.3 Hz
08
0
0
0
1
0
0
0
654.8 Hz
09
0
0
0
1
0
0
1
582.0 Hz
0A
0
0
0
1
0
1
0
523.8 Hz
0B
0
0
0
1
0
1
1
476.2 Hz
0C
0
0
0
1
1
0
0
436.5 Hz
0D
0
0
0
1
1
0
1
402.9 Hz
0E
0
0
0
1
1
1
0
374.2 Hz
0F
0
0
0
1
1
1
1
349.2 Hz
Data Sheet
58
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Table 4
Ideal Dither Frequency Key (typical)- Partial Table (cont’d)
Hex
DF6
DF5
DF4
DF3
DF2
DF1
DF0
Dither Frequency
10
0
0
1
0
0
0
0
327.4 Hz
11
0
0
1
0
0
0
1
308.1 Hz
12
0
0
1
0
0
1
0
291.0 Hz
13
0
0
1
0
0
1
1
275.7 Hz
14
0
0
1
0
1
0
0
261.9 Hz
15
0
0
1
0
1
0
1
249.4 Hz
16
0
0
1
0
1
1
0
238.1 Hz
17
0
0
1
0
1
1
1
227.7 Hz
18
0
0
1
1
0
0
0
218.3 Hz
19
0
0
1
1
0
0
1
209.5 Hz
1A
0
0
1
1
0
1
0
201.5 Hz
1B
0
0
1
1
0
1
1
194.0 Hz
1C
0
0
1
1
1
0
0
187.1 Hz
1D
0
0
1
1
1
0
1
180.6 Hz
1E
0
0
1
1
1
1
0
174.6 Hz
1F
0
0
1
1
1
1
1
169.0 Hz
20
0
1
0
0
0
0
0
163.7 Hz
21
0
1
0
0
0
0
1
158.7 Hz
22
0
1
0
0
0
1
0
154.1 Hz
23
0
1
0
0
0
1
1
149.7 Hz
24
0
1
0
0
1
0
0
145.5 Hz
25
0
1
0
0
1
0
1
141.6 Hz
26
0
1
0
0
1
1
0
137.8 Hz
27
0
1
0
0
1
1
1
134.3 Hz
28
0
1
0
1
0
0
0
131.0 Hz
29
0
1
0
1
0
0
1
127.8 Hz
2A
0
1
0
1
0
1
0
124.7 Hz
2B
0
1
0
1
0
1
1
121.8 Hz
2C
0
1
0
1
1
0
0
119.0 Hz
2D
0
1
0
1
1
0
1
116.4 Hz
Data Sheet
59
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Table 4
Ideal Dither Frequency Key (typical)- Partial Table (cont’d)
Hex
DF6
DF5
DF4
DF3
DF2
DF1
DF0
Dither Frequency
2E
0
1
0
1
1
1
0
113.9 Hz
2F
0
1
0
1
1
1
1
111.4 Hz
30
0
1
1
0
0
0
0
109.1 Hz
31
0
1
1
0
0
0
1
106.9 Hz
32
0
1
1
0
0
1
0
104.8 Hz
33
0
1
1
0
0
1
1
102.7 Hz
34
0
1
1
0
1
0
0
100.7 Hz
35
0
1
1
0
1
0
1
98.8 Hz
36
0
1
1
0
1
1
0
97.0 Hz
37
0
1
1
0
1
1
1
95.2 Hz
38
0
1
1
1
0
0
0
93.5 Hz
39
0
1
1
1
0
0
1
91.9 Hz
3A
0
1
1
1
0
1
0
90.3 Hz
3B
0
1
1
1
0
1
1
88.8 Hz
3C
0
1
1
1
1
0
0
87.3 Hz
3D
0
1
1
1
1
0
1
85.9 Hz
3E
0
1
1
1
1
1
0
84.5 Hz
3F
0
1
1
1
1
1
1
83.1 Hz
40
1
0
0
0
0
0
0
81.8 Hz
41
1
0
0
0
0
0
1
80.6 Hz
42
1
0
0
0
0
1
0
79.4 Hz
43
1
0
0
0
0
1
1
78.2 Hz
44
1
0
0
0
1
0
0
77.0 Hz
45
1
0
0
0
1
0
1
75.9 Hz
46
1
0
0
0
1
1
0
74.8 Hz
47
1
0
0
0
1
1
1
73.8 Hz
48
1
0
0
1
0
0
0
72.8 Hz
49
1
0
0
1
0
0
1
71.8 Hz
4A
1
0
0
1
0
1
0
70.8 Hz
4B
1
0
0
1
0
1
1
69.8 Hz
Data Sheet
60
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Table 4
Ideal Dither Frequency Key (typical)- Partial Table (cont’d)
Hex
DF6
DF5
DF4
DF3
DF2
DF1
DF0
Dither Frequency
4C
1
0
0
1
1
0
0
68.9 Hz
4D
1
0
0
1
1
0
1
68.0 Hz
4E
1
0
0
1
1
1
0
67.2 Hz
4F
1
0
0
1
1
1
1
66.3 Hz
50
1
0
1
0
0
0
0
65.5 Hz
51
1
0
1
0
0
0
1
64.7 Hz
52
1
0
1
0
0
1
0
63.9 Hz
53
1
0
1
0
0
1
1
63.1 Hz
54
1
0
1
0
1
0
0
62.4 Hz
55
1
0
1
0
1
0
1
61.6 Hz
56
1
0
1
0
1
1
0
60.9 Hz
57
1
0
1
0
1
1
1
60.2 Hz
58
1
0
1
1
0
0
0
59.5 Hz
59
1
0
1
1
0
0
1
58.9 Hz
5A
1
0
1
1
0
1
0
58.2 Hz
5B
1
0
1
1
0
1
1
57.6 Hz
5C
1
0
1
1
1
0
0
56.9 Hz
5D
1
0
1
1
1
0
1
56.3 Hz
5E
1
0
1
1
1
1
0
55.7 Hz
5F
1
0
1
1
1
1
1
55.1 Hz
60
1
1
0
0
0
0
0
54.6 Hz
61
1
1
0
0
0
0
1
54.0 Hz
62
1
1
0
0
0
1
0
53.5 Hz
63
1
1
0
0
0
1
1
52.9 Hz
64
1
1
0
0
1
0
0
52.4 Hz
65
1
1
0
0
1
0
1
51.9 Hz
66
1
1
0
0
1
1
0
51.4 Hz
67
1
1
0
0
1
1
1
50.9 Hz
68
1
1
0
1
0
0
0
50.4 Hz
69
1
1
0
1
0
0
1
49.9 Hz
Data Sheet
61
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Table 4
Ideal Dither Frequency Key (typical)- Partial Table (cont’d)
Hex
DF6
DF5
DF4
DF3
DF2
DF1
DF0
Dither Frequency
6A
1
1
0
1
0
1
0
49.4 Hz
6B
1
1
0
1
0
1
1
49.0 Hz
6C
1
1
0
1
1
0
0
48.5 Hz
6D
1
1
0
1
1
0
1
48.1 Hz
6E
1
1
0
1
1
1
0
47.6 Hz
6F
1
1
0
1
1
1
1
47.2 Hz
70
1
1
1
0
0
0
0
46.8 Hz
71
1
1
1
0
0
0
1
46.4 Hz
72
1
1
1
0
0
1
0
45.9 Hz
73
1
1
1
0
0
1
1
45.5 Hz
74
1
1
1
0
1
0
0
45.2 Hz
75
1
1
1
0
1
0
1
44.8 Hz
76
1
1
1
0
1
1
0
44.4 Hz
77
1
1
1
0
1
1
1
44.0 Hz
78
1
1
1
1
0
0
0
43.7 Hz
79
1
1
1
1
0
0
1
43.3 Hz
7A
1
1
1
1
0
1
0
42.9 Hz
7B
1
1
1
1
0
1
1
42.6 Hz
7C
1
1
1
1
1
0
0
42.2 Hz
7D
1
1
1
1
1
0
1
41.9 Hz
7E
1
1
1
1
1
1
0
41.6 Hz
7F
1
1
1
1
1
1
1
41.2 Hz
6
1.76 × 10
f dith = --------------------------------------------------- Hz
(9)
register value × 336
Data Sheet
62
Rev. 1.1, 2009-01-19
TLE 7241E
Figure 28
B7
B6
B5
X
0
X
0
X
0
X
REF
FT
FT
B4
Over
Temperature
X
X
X
OL/SG VSHT OTMP
Short to Vpwr
0
0
B3
B2
SR0
SR0
SW2
SW2
Slew Rate
SR1
SR1
B1
B0
Switching
Hysteresis
B8
SW1
SW1
SW0
SW0
Switching
Hysteresis
B9
Slew Rate
B10
Fault Typing
Current Source
B11
Fault Typing
Current Source
B12
Open Load or
Short to GND
1
1
General
Configuration
CH
CH
Channel
MOSI
MISO
B13
General
Configuration
B14
Channel
B15
Ext./Int.
Reference Volt.
Functional Description and Electrical Characteristics
General Configuration Register
MOSI
•
•
•
•
B12 - B6: Not used, Ignored - Don’t Care
B5 Fault Typing Bit: Activates a 40 μA pull-up current on POSx pin for SG/OL
differentiation. Default = 0 (disabled)
B4 - B3 Slew Rate: Setting for the slew rate (see Table 5). Default = 3 (1.2 V/μs)
B2 - B0 Switching Hysteresis: Setting for the hysteresis value (see Table 6),
Default = 0 (40 mVpp)
MISO
•
•
•
•
•
•
•
•
B12 OL/SG: Open Load / Short to Ground fault flag
B11 VSHT: Short to BAT (Shorted Load) fault flag
B10 OTMP: Overtemperature fault flag
B9 - B7: Not used, always 0
B6 REF: = 0 when an external reference is detected on the REF pin,
B6 REF: = 1 when the REF pin is grounded and the internal 2.5 V reference is active
B5 FT: Contents of the FT-bit in the general configuration register
B4 - B3 Slew Rate: Contents of the Slew Rate settings in the general configuration
register
B2 - B0 SW: Contents of the switching hysteresis setting in the general configuration
register
Data Sheet
63
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
Table 5
Slew Rate Control Key
SR1
SR0
Tf/Tr (4 V - 10 V)
Slew Rate
0
0
0.5 μs
12 V/μs
0
1
1 μs
6 V/μs
1
0
2 μs
3 V/μs
1
1
5 μs
1.2 V/μs
Table 6
Switching Hysteresis Key
SH2
SH1
SH0
Hysteresis
0
0
0
40 mVpp
0
0
1
50 mVpp
0
1
0
60 mVpp
0
1
1
70 mVpp
1
0
0
80 mVpp
1
0
1
90 mVpp
1
1
0
100 mVpp
1
1
1
110 mVpp
Figure 29
B10
B9
RID2
RID2
RID1
RID1
0
0
B7
B6
B5
B4
B3
B2
B1
B0
0
0
RID0
RID0
X
RV7
X
RV6
X
RV5
X
RV4
X
RV3
X
RV2
X
RV1
X
RV0
Register Value
Command
Extension
1
1
B8
Register ID
B11
Register ID
B12
Command
Extension
1
1
Read Error
Registers
CH
CH
Channel
MOSI
MISO
B13
Read Error
Registers
B14
Channel
B15
Read Error Register
MOSI
•
•
•
B12 - B11 Command Extension: Always send as 00
B10 - B8 Register ID: Selects Register to be transmitted to μP during next SPI frame
(see Table 7)
B7 - B0: Not used, Ignored / Don't Care
Data Sheet
64
Rev. 1.1, 2009-01-19
TLE 7241E
Functional Description and Electrical Characteristics
MISO
•
•
•
B12 - 11 Command Extension: Always 00
B10 - B8 RID0-2: Register ID of the register contents in B7 - B0
B7 - B0 RV: Register contents
Table 7
Error Register Values per Channel
RID2
RID1
RID0
Register Name
0
0
0
Error Correction - 200 mV
0
0
1
Error Correction - 400 mV
0
1
0
Error Correction - 600 mV
0
1
1
Error Correction - 800 mV
1
0
0
Error Correction - 1000 mV
1
0
1
Chip Revision Code
1
1
0
00H
1
1
1
00H
The MOSI Commands “X1101XXX XXXXXXXX”, “X1110XXX XXXXXXXX”, and
“X1111XXX XXXXXXXX” are not valid commands for the TLE7241 E. The MISO return
words associated with these commands are undefined, but exclude the word “FFFFH”.
Data Sheet
65
Rev. 1.1, 2009-01-19
TLE 7241E
Application
6
Application
VPWR
(4)
Rbat (2)
2.5V ref
Cref
+5V
VPWR/
RECIRC
Cbat
Cvdd
VDD
BAT
REF
Cout1(3)
+5V or 3.3V
OUT1
Rsns1
SOL1
Csol1
NEG1
VSO
Cso
POS1
Rso
(5)
Cng1
(3)
Cps1
(3)
PGND1
SO
μController
Tri-Core
TC17XX
Rdft (1).
TLE7241
DEFAULT
OUT2
SI
Cout2 (3)
Rsns2
NEG2
SCK
POS2
CSB
Cng2
(3)
SOL2
Csol2
Cps2
(3)
PGND2
TEST
Figure 30
VPWR/
RECIRC
GND
Application Circuit
Note: This is a very simplified example of an application circuit. The function must be
verified in the real application
1. Recommended for applications with microcontroller I/O voltage levels less than
5.0 V. The resistor will limit the microcontroller input current when the adjacent pins
DEFAULT and VDD are shorted together.
2. Required for applications that do not provide a reverse battery protected BAT supply.
RBAT may also be required to limit the BAT pin current during BAT voltage transient
events (e. g. ISO pulses).
3. May be required for module level compliance with EMC specifications, but they are
not required for TLE7241 functionality or stability.
4. Connect to the REF pin directly to GND to enable the internal 2.5 V voltage reference.
5. Optional. Defines SO signal voltage when the SO pin has failed as an open circuit.
Note: In case of an unused channel, the OUTx, NEGx, and POSx pins should be
connected together.
Data Sheet
66
Rev. 1.1, 2009-01-19
TLE 7241E
Application
6.1
•
•
•
•
•
•
•
•
•
•
Layout Notes
The POS pin should be connected directly to the external sense resistor with a
dedicated trace.
The NEG pin should be connected directly to the external sense resistor with a
dedicated trace.
The POS pin trace should be routed near the NEG pin trace and both traces should
not be routed near noise inducing signal lines and/or components (SPI clock signals,
switching power supply inductors, etc.).
For best accuracy, the external sense resistor should be placed near the IC.
A capacitor should be connected between the VDD pin and ground near the IC.
A capacitor should be connected between the VSO pin and ground near the IC.
A capacitor should be connected between the BAT pin and ground near the IC.
A capacitor should be connected between the REF pin and ground near the IC.
The exposed lead frame should be connected to a large area ground plane and to
the pins PGND1, PGND2.
The GND pin should be connected directly to the ground plane.
Data Sheet
67
Rev. 1.1, 2009-01-19
TLE 7241E
Package Outlines
Package Outlines
1)
1.27
0.7 ±0.2
0.4 ±0.08 2)
0.25 M
A
11
10.3 ±0.3
D
Bottom View
Ejector Mark
Ejector Mark
11
20
Exposed Diepad
4.6
20
0.1 C 20x
C
A-B C D 20x
8° MAX.
7.6 -0.2
0.23 +0.09
0.35 x 45°
2.6 MAX.
0...0.10
2.45 -0.2
7
Index Marking
10
1
10
B
5.2
1
Index Marking
12.8 -0.2 1)
1) Does not include plastic or metal protrusion of 0.15 max. per side
2) Does not include dambar protrusion of 0.05 max. per side
PG-DSO-20-27-PO V14
Figure 31
PG-DSO-20-27 EDP(Plastic Dual Small Outline Exposed Die Pad)
Green Product (RoHS-compliant)
To meet the world-wide customer requirements for environmentally friendly
products and to be compliant with government regulations the device is
available as a green product. Green products are RoHS-Compliant (i.e Pb-free
finish on leads and suitable for Pb-free soldering according to IPC/JEDEC JSTD-020).
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.
Data Sheet
68
Dimensions in mm
Rev. 1.1, 2009-01-19
TLE 7241E
Revision History
8
Revision History
Version
Date
Rev. 1.1
2009-01-19 Page 68: Updated Package drawing (Stand-off)
Page 69-70: added Revision History, updated Legal
Disclaimer
Data Sheet
Changes
69
Rev. 1.1, 2009-01-19
Edition 2009-01-19
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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