datasheet for RJK0632JPD by Renesas Electronics Corporation

datasheet for RJK0632JPD by Renesas Electronics Corporation
Preliminary Datasheet
RJK0632JPD
Silicon N Channel MOS FET
High Speed Power Switching
R07DS0342EJ0100
Rev.1.00
May 11, 2011
Features
•
•
•
•
•
For Automotive application
AEC-Q101 compliant
Low on-resistance : RDS(on) = 29 mΩ typ.
Capable of 4.5 V gate drive
Low input capacitance : Ciss = 440 pF typ.
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S))
2, 4
D
4
1
2
1.
2.
3.
4.
1G
3
Gate
Drain
Source
Drain
S
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
4. AEC-Q101 compliant
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IDR (pulse) Note1
IAP Note2
EAR Note2
Pch Note3
Tch Note4
Tstg
Value
60
±20
20
80
20
80
14
16.8
25
175
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
Thermal Impedance Characteristics
• Channel to case thermal impedance θch-c: 6.00°C/W
R07DS0342EJ0100 Rev.1.00
May 11, 2011
Page 1 of 6
RJK0632JPD
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
IGSS
IDSS
VGS(off)
Static drain to source on state
resistance
RDS(on)
—
—
1.0
—
—
—
—
29
±10
1
2.0
35
μA
μA
V
mΩ
VGS = ±20 V, VDS = 0
VDS = 60 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 10 A, VGS= 10 V Note5
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
RDS(on)
—
41
55
mΩ
ID = 10 A, VGS= 4.5 V Note5
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
—
—
—
—
—
—
—
—
—
—
—
—
440
135
85
10
1.4
3.0
8.5
12
40
11
0.95
30
—
—
—
—
—
—
—
—
—
—
1.24
—
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
VDS = 10 V, VGS = 0
f = 1 MHz
Body-drain diode reverse recovery
time
Note:
trr
Test Conditions
VDD = 25 V, VGS = 10 V,
ID = 20 A
ID= 10 A, RL = 3 Ω
VGS = 10 V, RG = 4.7 Ω
IF = 20 A, VGS = 0 Note5
IF = 20 A, VGS = 0,
diF/dt = 100 A/μs
5. Pulse test
R07DS0342EJ0100 Rev.1.00
May 11, 2011
Page 2 of 6
RJK0632JPD
Preliminary
Main Characteristics
Maximum Safe Operation Area
40
100
100
Case Temperature
1 Operation
in this area
is limited RDS(on)
PW = 10 ms
0.1
Tc (°C)
100
3.3 V
16
12
VGS = 2.6 V
8
4
Drain Current ID (A)
Drain Current ID (A)
100
10
Typical Transfer Characteristics
10 V
5V
Tc = 25°C
Pulse Test
0
5
10
Tc = 175°C
25°C
1
−40°C
0.1
0.01
0.001
0
10
VDS = 10 V
Pulse Test
1
2
3
4
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source State Resistance
vs. Drain Current
200
ID = 10 A
Pulse Test
160
120
Tc = 175°C
80
25°C
40
−40°C
0
0
4
8
12
16
Gate to Source Voltage VGS (V)
R07DS0342EJ0100 Rev.1.00
May 11, 2011
20
Static Drain to Source On State Resistance
RDS(on) (mΩ)
Static Drain to Source On State Resistance
RDS(on) (mΩ)
1
Drain to Source Voltage VDS (V)
Typical Output Characteristics
20
DC Operation
0.01
0.1
200
150
s
50
µs
0
m
10
1
20
10
µs
30
Tc = 25°C
1 shot Pulse
0
Drain Current ID (A)
1000
10
Channel Dissipation
50
10
Pch (W)
Power vs. Temperature Derating
1000
Tc = 25°C
Pulse Test
100
VGS = 4.5 V
10 V
10
1
10
100
Drain Current ID (A)
Page 3 of 6
Preliminary
Static Drain to Source on State Resistance
vs. Temperature
100
Typical Capacitance vs.
Drain to Source Voltage
10000
Pulse Test
ID = 10 A
Capacitance C (pF)
80
VGS = 4.5 V
60
40
10 V
20
0
50
100
150
1000
Ciss
Coss
100
Crss
5
10
15
20
25
30
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Reverse Drain Current vs.
Source to Drain Voltage
40
20
VGS
Tc = 25°C
ID = 10 A
16
VDD = 25 V
10 V
5V
30
12
VDS
20
8
VDD = 25 V
10 V
5V
10
4
0
0
0
200
4
8
12
16
20
Gate Charge Qg (nC)
20
Reverse Drain Current IDR (A)
50
Tc = 25°C
VGS = 0
f = 1 MHz
10
0
−50
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Static Drain to Source On State Resistance
RDS(on) (mΩ)
RJK0632JPD
Tc = 25°C
Pulse Test
10 V
16
12
8
VGS = 0, −5 V
4
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Repetitive Avalanche Energy EAR (mJ)
Avalanche Energy vs.
Channel Temperature Derating
100
IAP = 14 A
VDD = 25 V
duty < 0.1 %
Rg ≥ 50 Ω
80
60
40
20
0
25
50
75
100
125
150
175
Channel Temperature Tch (°C)
R07DS0342EJ0100 Rev.1.00
May 11, 2011
Page 4 of 6
Preliminary
Normalized Transient Thermal Impedance γs (t)
RJK0632JPD
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
D=1
0.5
0.2
0.1
0.1
0.05
θch – c(t) = γs (t) • θch – c
θch – c = 6.00°C/W, Tc = 25°C
e
uls
tp
ho
0.01
PDM
1s
D=
0.02
0.01
10 µ
PW
T
PW
T
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
L
VDS
Monitor
EAR =
1
L • IAP2 •
2
VDSS
VDSS – VDD
IAP
Monitor
V (BR)DSS
Rg
VDD
D. U. T
IAP
VDS
Vin
15 V
ID
50 Ω
0
VDD
Switching Time Test Circuit
Vout
Monitor
Vin Monitor
Rg
Switching Time Waveform
90%
D.U.T.
RL
Vin
Vout
Vin
10 V
10%
10%
VDS
= 30 V
90%
td(on)
R07DS0342EJ0100 Rev.1.00
May 11, 2011
10%
tr
90%
td(off)
tf
Page 5 of 6
RJK0632JPD
Preliminary
Package Dimensions
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZD-C
Previous Code
DPAK(S) / DPAK(S)V
MASS[Typ.]
0.28g
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
(5.1)
(5.1)
6.5 ± 0.3
5.6 ± 0.5
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
Package Name
DPAK(S)
0 – 0.25
2.5 ± 0.5
(1.2)
1.0 Max.
2.29 ± 0.5
0.8 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
Ordering Information
Orderable Part Number
Quantity
RJK0632JPD-00-J3
3000 pcs
R07DS0342EJ0100 Rev.1.00
May 11, 2011
Shipping Container
Taping (Sinistrorse)
Page 6 of 6
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