datasheet for SMK630F by AUK Corp.

datasheet for SMK630F by AUK Corp.
SMK630F
Advanced N-Ch Power MOSFET
Features
•
•
•
•
PIN Connection
High Voltage : BVDSS=200V(Min.)
Low Crss : Crss=24pF(Typ.)
Low gate charge : Qg=12nC(Typ.)
Low RDS(on) : RDS(on)=0.4 (Max.)
D
G
Ordering Information
Type N o.
M a r k in g
Pa ck a ge Code
SMK630F
SMK630
TO-220F-3L
GD
S
S
Marking Diagram
Column 1 : Manufacturer
Column 2 : Production Information
e.g.) GYMDD
-. G : Factory management code
-. YMDD : Date Code (year, month, date)
AUK
AUK
GYMDD
YMDD
SMK630
SDB20D45
Column 3 : Device Code
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
200
V
Gate-source voltage
VGSS
±30
V
(Tc=25 )
9
A
(Tc=100 )
5.4
A
IDM
36
A
Power dissipation
PD
30
W
Avalanche current (Single)
IAS
9
A
Single pulsed avalanche energy
EAS
232
mJ
Avalanche current (Repetitive)
IAR
9
A
Repetitive avalanche energy
EAR
9.5
mJ
TJ
150
Tstg
-55~150
Drain current (DC) *
Drain current (Pulsed)
ID
*
Junction temperature
Storage temperature range
°C
* Limited by maximum junction temperature
Characteristic
Thermal
resistance
Symbol
Typ.
Max.
Junction-case
Rth(J-C)
-
4.16
Junction-ambient
Rth(J-A)
-
62.5
KSD-T0O043-001
Unit
°C/W
1
SMK630F
Electrical Characteristics (TC=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Drain-source breakdown voltage
BVDSS
ID=250uA, VGS=0
200
-
-
V
Gate threshold voltage
VGS(th)
ID=250uA, VDS=VGS
2.0
-
4.0
V
Drain-source cut-off current
IDSS
VDS=200V, VGS=0V
-
-
1
uA
Gate leakage current
IGSS
VDS=0V, VGS=±30V
-
-
±100
nA
RDS(ON)
VGS=10V, ID=4.5A
-
0.34
0.40
Ω
gfs
VDS=10V, ID=4.5A
-
5.5
-
S
-
420
525
-
99
128
-
24
28
-
11
-
-
92
-
td(off)
-
70
-
Fall time
tf
-
72
-
Total gate charge
Qg
-
12
17
Gate-source charge
Qgs
-
2.4
-
Gate-drain charge
Qgd
-
3.5
-
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
VDD=100V, ID=9A
RG=25Ω
tr
Turn-off delay time
VGS=0V, VDS=25V,
f=1MHz
VDS=160V, VGS=10V
ID=9A
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (TC=25°C unless otherwise noted)
Characteristic
Symbol
Source current (DC)
IS
Source current (Pulsed)
Forward voltage
Test Condition
Min.
Typ. Max. Unit
-
-
9
ISM
Integral reverse diode
in the MOSFET
-
-
36
VSD
VGS=0V, IS=9A
-
-
1.4
V
Reverse recovery time
trr
-
158
-
ns
Reverse recovery charge
Qrr
IS=9A, VGS=0V
dIF/dt=100A/us
-
0.97
-
uC
A
Note ;
Repetitive rating : Pulse width limited by maximum junction temperature
L=4.3mH, IAS=9A, VDD=50V, RG=25Ω, Starting TJ=25
Pulse Test : Pulse width≤300us, Duty cycle≤2%
Essentially independent of operating temperature
KSD-T0O043-001
2
SMK630F
Electrical Characteristic Curves
Fig. 1 ID - VDS
Fig. 2 ID - VGS
Fig. 3 RDS(on) - ID
Fig. 4 IS - VSD
Fig. 5 Capacitance - VDS
Fig. 6 VGS - QG
KSD-T0O043-001
3
SMK630F
Fig. 8 RDS(on) - TJ
Fig. 7 VDSS - TJ
Fig. 9
Fig. 10 Safe Operating Area
ID - TC
KSD-T0O043-001
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Fig. 11 Gate Charge Test Circuit & Waveform
SMK630F
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
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5
SMK630F
Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform
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SMK630F
Outline Dimension
unit: mm
KSD-T0O043-001
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SMK630F
The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.
KSD-T0O043-001
8
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