6MBI100VB-120-50
http://www.fujielectric.com/products/semiconductor/
6MBI100VB-120-50
IGBT Modules
IGBT MODULE (V series)
1200V / 100A / 6 in one package
Features
Compact Package
P.C.Board Mount
Low VCE (sat)
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Symbols
Inverter
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power dissipation
Junction temperature
Conditions
VCES
VGES
Ic
Ic pulse
-Ic
-Ic pulse
Pc
Tj
Continuous
1ms
1ms
1 device
Tc=100°C
Tc=80°C
Maximum
ratings
1200
±20
100
200
100
200
520
175
Operating junciton temperature
(under switching conditions)
Tjop
150
Case temperature
Storage temperature
Tc
Tstg
125
-40 ~ +125
Isolation voltage
Between terminal and copper base (*1)
Viso
Between thermistor and others (*2)
AC : 1min.
Screw torque
Mounting (*3)
M5
-
Units
V
V
A
W
°C
2500
VAC
3.5
Nm
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
1
7175b
JULY 2015
6MBI100VB-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Symbols
Conditions
ICES
IGES
VGE (th)
VGE = 0V, VCE = 1200V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 100mA
VCE (sat)
(terminal)
VGE = 15V
IC = 100A
VCE (sat)
(chip)
VGE = 15V
IC = 100A
Rg (int)
Cies
ton
tr
tr (i)
toff
tf
VCE = 10V, VGE = 0V, f = 1MHz
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Inverter
Collector-Emitter saturation voltage
Internal gate resistance
Input capacitance
Turn-on time
Turn-off time
VCC = 600V
IC = 100A
VGE = +15 / -15V
RG = 1.6Ω
VF
(terminal)
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
IF = 100A
Forward on voltage
VF
(chip)
IF = 100A
Reverse recovery time
trr
Resistance
R
B value
B
IF = 100A
T = 25°C
T = 100°C
T = 25 / 50°C
Items
Symbols
Conditions
Thermal resistance (1device)
Rth(j-c)
Contact thermal resistance (1device) (*4)
Rth(c-f)
Thermistor
Characteristics
min.
typ.
max.
1.0
200
6.0
6.5
7.0
2.30
2.75
2.60
2.65
1.75
2.20
2.05
2.10
7.5
9.1
0.39
1.20
0.09
0.60
0.03
0.53
1.00
0.06
0.30
2.25
2.70
2.40
2.35
1.70
2.15
1.85
1.80
0.35
5000
465
495
520
3305
3375
3450
Units
mA
nA
V
V
Ω
nF
µs
V
µs
Ω
K
Thermal resistance characteristics
Characteristics
min.
typ.
max.
0.29
0.44
0.05
-
Inverter IGBT
Inverter FWD
with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Equivalent Circuit Schematic
[ Inverter ]
[ Thermistor ]
16,17,18
30,31,32
1
2
9
10
5
6
U
27,28,29
3
4
V
24,25,26
W
21,22,23
11
12
7
8
13,14,15
33,34,35
2
19
20
Units
°C/W
6MBI100VB-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
VGE=20V
15V
200
12V
VGE=20V
Collector current : IC [A]
Collector current : IC [A]
200
Tj= 150oC / chip
150
10V
100
50
12V
15V
150
100
10V
50
8V
8V
0
0
0
1
2
3
4
5
0
2
4
5
Collector-Emitter voltage: VCE [V]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25oC / chip
Collector - Emitter voltage : VCE [V]
Tj=25°C
150°C
150
125°C
100
50
8
6
4
Ic=200A
Ic=100A
Ic= 50A
2
0
0
0
1
2
3
4
5
5
10
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
Collector - Emitter voltage: VCE [200V/div]
Gate - Emitter voltage: VGE [5V/div]
100.0
Cies
1.0
Coes
Cres
0.1
0
10
20
30
20
25
[ Inverter ]
Dynamic gate charge (typ.)
Vcc=600V, Ic=100A, Tj= 25°C
VGE=0V, f= 1MHz, Tj= 25oC
10.0
15
Gate - Emitter voltage: VGE [V]
Collector-Emitter voltage: VCE [V]
Capacitance: Cies, Coes, Cres [nF]
3
Collector-Emitter voltage: VCE [V]
200
Collector current : IC [A]
1
40
Collector - Emitter voltage: VCE [V]
VCE
VGE
0
-1000
0
Gate charge: Qg [nC]
3
1000
6MBI100VB-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.6Ω, Tj= 150°C
10000
1000
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.6Ω, Tj= 125°C
toff
ton
tr
100
tf
10
0
50
100
150
200
10000
1000
toff
ton
tr
100
tf
10
250
0
Collector current: IC [A]
10000
toff
1000
ton
tr
100
tf
10
0.1
1.0
10.0
150
200
250
100.0
30
Eon(150°C)
Eon(125°C)
20
Eoff(150°C)
Eoff(125°C)
Err(150°C)
Err(125°C)
10
0
0
50
100
150
200
250
Collector current: IC [A]
Gate resistance : RG [Ω]
[ Inverter ]
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 1.6Ω ,Tj = 150°C
[ Inverter ]
Switching loss vs. gate resistance (typ.)
Vcc=600V, Ic=100A, VGE=±15V
30
250
Collector current: IC [A]
Switching loss : Eon, Eoff, Err [mJ/pulse ]
100
Collector current: IC [A]
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.6Ω
Switching loss : Eon, Eoff, Err [mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
[ Inverter ]
Switching time vs. gate resistance (typ.)
Vcc=600V, Ic=100A, VGE=±15V, Tj= 125°C
50
20
Eon(150°C)
Eon(125°C)
Eoff(150°C)
Eoff(125°C)
Err(150°C)
Err(125°C)
10
200
150
RBSOA
(Repetitive pulse)
100
50
0
0
0
0
1
10
200
400
600
800 1000 1200 1400 1600
100
Collector-Emitter voltage : VCE [V]
(Main terminals)
Gate resistance : RG [Ω]
4
6MBI100VB-120-50
[ Inverter ]
Forward current vs. forward on voltage (typ.)
chip
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
Forward current : IF [A]
200
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Tj=25°C
150
Tj=150°C
Tj=125°C
100
50
0
10.00
1
2
3
10
0
50
100
150
200
250
Forward on voltage : VF [V]
Forward current : IF [A]
Transient thermal resistance (max.)
[ Thermistor ]
Temperature characteristic (typ.)
n
τn
rn
[°C/W]
[sec]
IGBT
FWD
100
1
2
3
4
0.0023 0.0301 0.0598 0.0708
0.03111 0.07886 0.11141 0.06862
0.04719 0.11966 0.16904 0.10411
1.00
FWD[Inverter]
IGBT[Inverter]
0.10
0.01
0.001
Irr(150°
C)
Irr(125°
C)
trr(150°
C)
trr(125°
C)
100
4
Resistance : R [kΩ]
Thermal resistanse : Rth(j-c) [ °C/W ]
0
1000
[ Inverter ]
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, RG=1.6Ω
0.010
0.100
10
1
0.1
1.000
-60
Pulse width : Pw [sec]
-40
-20
0
20
40
60
80
100 120 140 160 180
Temperature [°C ]
Outline Drawings, mm
Weight:300g(typ.)
5
300
6MBI100VB-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
WARNING
1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of July 2015.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specifications.
2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property rights which may arise from the use of the applications described herein.
3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, flame retardant, and free of malfunction.
4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.
• Computers
• OA equipment
• Communications equipment (terminal devices)
• Measurement equipment
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• Audiovisual equipment • Electrical home appliances
• Personal equipment • Industrial robots etc.
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it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment
becomes faulty.
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(without limitation).
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7.Copyright ©1996-2015 by Fuji Electric Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.
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Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions
set forth herein.
6
Technical Information
IGBT Modules
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Information
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2015-10
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