TN0106 (40980 байта)
TN0106
TN0110
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BVDSS /
BVDGS
RDS(ON)
(max)
ID(ON)
(min)
VGS(th)
(max)
Order Number / Package
60V
3.0Ω
2A
2.0V
TN0106N3
100V
3.0Ω
2A
2.0V
TN0110N3
TO-92
Features
Low Threshold DMOS Technology
❏ Low threshold — 2.0V max.
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
❏ High input impedance
❏ Low input capacitance — 50pF typical
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
❏ Low input and output leakage
❏ Complementary N- and P-channel devices
Applications
❏ Logic level interfaces – ideal for TTL and CMOS
Package Option
❏ Solid state relays
❏ Battery operated systems
❏ Photo voltaic drives
❏ Analog switches
❏ General purpose line drivers
❏ Telecom switches
Absolute Maximum Ratings
SGD
Drain-to-Source Voltage
BVDSS
Drain-to-Gate Voltage
BVDGS
Gate-to-Source Voltage
± 20V
Operating and Storage Temperature
Soldering Temperature*
TO-92
-55°C to +150°C
300°C
* Distance of 1.6 mm from case for 10 seconds.
Note: See Package Outline section for dimensions.
01/06/03
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1
TN0106/TN0110
Thermal Characteristics
Package
ID (continuous)*
TO-92
ID (pulsed)
350mA
Power Dissipation
@ TC = 25°C
θjc
θja
°C/W
°C/W
1.0W
125
2.0A
170
IDR*
IDRM
350mA
2.0A
* ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified)
Parameter
Min
Drain-to-Source
Breakdown Voltage
BVDSS
TN0110
100
TN0106
60
VGS(th)
Gate Threshold Voltage
∆V GS(th)
Change in VGS(th) with Temperature
IGSS
Gate Body Leakage
IDSS
Zero Gate Voltage Drain Current
Typ
0.6
-3.2
Max
ID = 1mA, VGS = 0V
2.0
V
VGS = VDS, ID = 0.5mA
-5.0
mV/°C
VGS = VDS, ID = 1.0mA
100
nA
VGS = ±20V, VDS = 0V
10
ON-State Drain Current
RDS(ON)
0.75
1.4
2.0
3.4
VGS = 0V, VDS = Max Rating
µA
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
A
VGS = 5V, VDS = 25V
VGS = 10V, VDS = 25V
Static Drain-to-Source
ON-State Resistance
2.0
1.6
3.0
∆RDS(ON)
Change in RDS(ON) with Temperature
0.6
1.1
GFS
Forward Transconductance
CISS
Input Capacitance
50
60
COSS
Common Source Output Capacitance
25
35
CRSS
Reverse Transfer Capacitance
4.0
8.0
td(ON)
Turn-ON Delay Time
2.0
5.0
tr
Rise Time
3.0
5.0
td(OFF)
Turn-OFF Delay Time
6.0
7.0
tf
Fall Time
3.0
6.0
VSD
Diode Forward Voltage Drop
1.0
1.5
trr
Reverse Recovery Time
400
225
Conditions
V
500
ID(ON)
Unit
4.5
Ω
%/°C
400
m
Ω
Symbol
VGS = 4.5V, ID = 250mA
VGS = 10V, ID = 500mA
ID = 0.5A, VGS = 10V
VDS = 25V, ID = 500mA
pF
VGS = 0V, VDS = 25V
f = 1 MHz
ns
VDD = 25V
ID = 1.0A
RGEN = 25Ω
V
ISD = 0.5A, VGS = 0V
ns
ISD = 0.5A, VGS = 0V
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
VDD
RL
10V
90%
PULSE
GENERATOR
INPUT
0V
10%
t(ON)
td(ON)
Rgen
t(OFF)
tr
td(OFF)
OUTPUT
tF
D.U.T.
VDD
10%
INPUT
10%
OUTPUT
0V
90%
90%
2
TN0106/TN0110
Typical Performance Curves
Output Characteristics
Saturation Characteristics
5
5
4
4
VGS = 10V
3
ID (amperes)
ID (amperes)
VGS = 10V
8V
2
6V
1
4V
2V
0
0
10
20
30
40
3
8V
2
6V
1
4V
0
2V
50
0
2
4
VDS (volts)
6
8
10
VDS (volts)
Power Dissipation vs. Case Temperature
Transconductance vs. Drain Current
0.5
2.0
TA = -55°C
0.4
0.3
PD (watts)
GFS (siemens)
TA = 25°C
TA = 150°C
0.2
TO-92
1.0
0.1
VDS = 25V
0
0
0
.6
1.2
1.8
2.4
0
3.0
25
50
125
150
Thermal Resistance (normalized)
1.0
TC = 25°C
TO-92 (pulsed)
ID (amperes)
100
Thermal Response Characteristics
Maximum Rated Safe Operating Area
10
1.0
0.1
75
TC (° C)
ID (amperes)
TO-92 (DC)
0.8
0.6
0.4
TO-92
TC = 25°C
PD = 1W
0.2
0
0.01
1
10
100
0.001
1000
VDS (volts)
0.01
0.1
tp (seconds)
3
1
10
TN0106/TN0110
Typical Performance Curves
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
1.3
5.0
VGS = 5V
4.0
RDS(ON) (ohms)
1.1
1.0
3.0
2.0
1.0
0.9
0
0.8
-50
0
50
100
150
1.0
0
Transfer Characteristics
5.0
V(th) and RDS Variation with Temperature
1.4
3.0
VDS = 25V
TA = -55°C
1.4
V(th)@ 0.5mA
1.2
VGS(th) (normalized)
2.4
ID (amperes)
4.0
3.0
2.0
ID (amperes)
Tj (°C)
25°C
1.8
150°C
1.2
0.6
0
1.0
1.2
1.0
RDS(ON) @ 10V, 0.5A
0.8
0.8
0.6
0.6
0.4
0
2
4
6
8
10
RDS(ON) (normalized)
BVDSS (normalized)
1.2
VGS = 10V
0.4
-50
0
50
VGS (volts)
100
150
Tj (°C)
Capacitance vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
10
100
f = 1MHz
VDS = 10V
8
55pF
VGS (volts)
C (picofarads)
75
CISS
50
40V
6
4
COSS
25
2
CRSS
50pF
0
0
0
10
20
30
40
0
1.0
2.0
3.0
4.0
5.0
QG (nanocoulombs)
VDS (volts)
01/06/03
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
©2003 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
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