S29JL064H 64 Mbit (8 M x 8-Bit/4 M x 16-Bit), 3 V Simultaneous Read/Write Flash This product family has been retired and is not recommended for designs. For new and current designs, the S29JL064J supersedes the S29JL064H. This is the factory-recommended migration path. Please refer to the S29JL064J data sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only Distinctive Characteristics Ultra Low Power Consumption (typical values) – 2 mA active read current at 1 MHz – 10 mA active read current at 5 MHz – 200 nA in standby or automatic sleep mode Architectural Advantages Simultaneous Read/Write operations – Data can be continuously read from one bank while executing erase/program functions in another bank – Zero latency between read and write operations Cycling Endurance: 1 Million Cycles per Sector Typical es Software Features Supports Common Flash Memory Interface (CFI) D Erase Suspend/Erase Resume – Suspends erase operations to read data from, or program data to, a sector that is not being erased, then resumes the erase operation ew Boot Sectors – Top and bottom boot sectors in the same device – Any combination of sectors can be erased Data# Polling and Toggle Bits – Provides a software method of detecting the status of program or erase cycles fo Zero Power Operation – Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero R ot Performance Characteristics High Performance – Access time as fast as 55 ns – Program time: 4 µs/word typical using accelerated programming function Cypress Semiconductor Corporation Document Number: 002-01184 Rev. *B • Hardware Features Ready/Busy# Output (RY/BY#) – Hardware method for detecting program or erase cycle completion Hardware Reset Pin (RESET#) – Hardware method of resetting the internal state machine to the read mode WP#/ACC Input Pin – Write protect (WP#) function protects sectors 0, 1, 140, and 141, regardless of sector protect status – Acceleration (ACC) function accelerates program timing N 48-pin TSOP ec Compatible with JEDEC Standards – Pinout and software compatible with single-power-supply flash standard 63-ball Fine Pitch BGA Unlock Bypass Program Command – Reduces overall programming time when issuing multiple program command sequences d om m en de Secured Silicon Sector: Extra 256-byte Sector – Factory locked and identifiable: 16 bytes available for secure, random factory Electronic Serial Number; verifiable as factory locked through autoselect function – Customer lockable: One-time programmable only. Once locked, data cannot be changed rN Manufactured on 0.13 µm Process Technology Package options ig n Data Retention: 20 years typical Flexible Bank architectUre – Read may occur in any of the three banks not being written or erased – Four banks may be grouped by customer to achieve desired bank divisions Sector Protection – Hardware method to prevent any program or erase operation within a sector – Temporary Sector Unprotect allows changing data in protected sectors in-system 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised January 08, 2016 S29JL064H Contents Connection Diagrams.................................................. 6 5. Pin Description............................................................. 7 6. Logic Symbol ............................................................... 7 7. Ordering Information ................................................... 8 8. 8.1 8.2 8.3 8.4 8.5 8.6 8.7 8.8 8.9 8.10 8.11 8.12 8.13 8.14 Device Bus Operations................................................ 9 Word/Byte Configuration................................................ 9 Requirements for Reading Array Data......................... 10 Writing Commands/Command Sequences.................. 10 Simultaneous Read/Write Operations with Zero Latency ........................................................................ 10 Standby Mode.............................................................. 11 Automatic Sleep Mode................................................. 11 RESET#: Hardware Reset Pin..................................... 11 Output Disable Mode ................................................... 12 Autoselect Mode .......................................................... 16 Sector/Sector Block Protection and Unprotection........ 17 Write Protect (WP#) ..................................................... 18 Temporary Sector Unprotect........................................ 19 Secured Silicon Sector Flash Memory Region ............ 21 Hardware Data Protection............................................ 22 9. Common Flash Memory Interface (CFI) ................... 23 10. 10.1 10.2 10.3 10.4 10.5 10.6 10.7 10.8 Command Definitions................................................ 25 Reading Array Data ..................................................... 26 Reset Command .......................................................... 26 Autoselect Command Sequence ................................. 26 Enter Secured Silicon Sector/Exit Secured Silicon Sector Command Sequence ................................................... 26 Byte/Word Program Command Sequence................... 27 Chip Erase Command Sequence ................................ 28 Sector Erase Command Sequence ............................. 29 Erase Suspend/Erase Resume Commands ................ 30 11. 11.1 11.2 11.3 11.4 11.5 11.6 11.7 Write Operation Status .............................................. DQ7: Data# Polling ...................................................... RY/BY#: Ready/Busy#................................................. DQ6: Toggle Bit I ......................................................... DQ2: Toggle Bit II ........................................................ Reading Toggle Bits DQ6/DQ2.................................... DQ5: Exceeded Timing Limits ..................................... DQ3: Sector Erase Timer............................................. 12. Absolute Maximum Ratings...................................... 36 13. Operating Ranges ...................................................... 37 AC Characteristics...................................................... 41 Read-Only Operations .................................................. 41 Hardware Reset (RESET#)........................................... 42 Word/Byte Configuration (BYTE#) ................................ 43 Erase and Program Operations .................................... 44 Temporary Sector Unprotect......................................... 48 Alternate CE# Controlled Erase and Program Operations ....................................................................49 18. Erase and Programming Performance ..................... 51 19. TSOP & BGA Pin Capacitance ................................... 51 ig n 4. 17. 17.1 17.2 17.3 17.4 17.5 17.6 20. Physical Dimensions .................................................. 52 20.1 FBE063—63-Ball Fine-Pitch Ball Grid Array (BGA) 12 x 11 mm package ....................................................52 20.2 TS 048—48-Pin Standard TSOP .................................. 53 es Block Diagram.............................................................. 5 Key To Switching Waveforms .................................... 40 D 3. 16. 21. ew Product Selector Guide ............................................... 4 Test Conditions ........................................................... 39 Document History Page ............................................. 54 rN 2. 15. fo General Description..................................................... 3 Simultaneous Read/Write Operations with Zero Latency 3 S29JL064H Features ..................................................... 3 N ot R ec om m en de d 1. 1.1 1.2 31 32 33 34 35 35 35 35 14. DC Characteristics..................................................... 37 14.1 CMOS Compatible ....................................................... 37 14.2 Zero-Power Flash ........................................................ 38 Document Number: 002-01184 Rev. *B Page 2 of 55 S29JL064H 1. General Description The S29JL064H is a 64 megabit, 3.0 volt-only flash memory device, organized as 4,194,304 words of 16 bits each or 8,388,608 bytes of 8 bits each. Word mode data appears on DQ15–DQ0; byte mode data appears on DQ7–DQ0. The device is designed to be programmed in-system with the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programmers. The device is available with an access time of 55, 60, 70, or 90 ns and is offered in 48-pin TSOP and 63-ball Fine Pitch BGA packages. Standard control pins—chip enable (CE#), write enable (WE#), and output enable (OE#)—control normal read and write operations, and avoid bus contention issues. The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. 1.1 Simultaneous Read/Write Operations with Zero Latency es ig n The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into four banks, two 8 Mb banks with small and large sectors, and two 24 Mb banks of large sectors. Sector addresses are fixed, system software can be used to form user-defined bank groups. ew D During an Erase/Program operation, any of the three non-busy banks may be read from. Note that only two banks can operate simultaneously. The device can improve overall system performance by allowing a host system to program or erase in one bank, then immediately and simultaneously read from the other bank, with zero latency. This releases the system from waiting for the completion of program or erase operations. 24 Mb Bank 3 24 Mb Bank 4 8 Mb fo Bank 2 d 8 Mb de Bank 1 Sector Sizes Eight 8 Kbyte/4 Kword, Fifteen 64 Kbyte/32 Kword Forty-eight 64 Kbyte/32 Kword Forty-eight 64 Kbyte/32 Kword Eight 8 Kbyte/4 Kword, Fifteen 64 Kbyte/32 Kword S29JL064H Features ec 1.2 Megabits om m en Bank rN The S29JL064H can be organized as both a top and bottom boot sector configuration. ot R The Secured Silicon Sector Sector is an extra 256 byte sector capable of being permanently locked by Spansion or customers. The Secured Silicon Customer Indicator Bit (DQ6) is permanently set to 1 if the part has been customer locked, and permanently set to 0 if the part has been factory locked. This way, customer lockable parts can never be used to replace a factory locked part. N Factory locked parts provide several options. The Secured Silicon Sector may store a secure, random 16 byte ESN (Electronic Serial Number), customer code (programmed through Spansion programming services), or both. Customer Lockable parts may utilize the Secured Silicon Sector as bonus space, reading and writing like any other flash sector, or may permanently lock their own code there. DMS (Data Management Software) allows systems to easily take advantage of the advanced architecture of the simultaneous read/write product line by allowing removal of EEPROM devices. DMS will also allow the system software to be simplified, as it will perform all functions necessary to modify data in file structures, as opposed to single-byte modifications. To write or update a particular piece of data (a phone number or configuration data, for example), the user only needs to state which piece of data is to be updated, and where the updated data is located in the system. This is an advantage compared to systems where user-written software must keep track of the old data location, status, logical to physical translation of the data onto the Flash memory device (or memory devices), and more. Using DMS, user-written software does not need to interface with the Flash memory directly. Instead, the user's software accesses the Flash memory by calling one of only six functions. The device offers complete compatibility with the JEDEC 42.4 single-power-supply Flash command set standard. Commands are written to the command register using standard microprocessor write timings. Reading data out of the device is similar to reading from other Flash or EPROM devices. Document Number: 002-01184 Rev. *B Page 3 of 55 S29JL064H The host system can detect whether a program or erase operation is complete by using the device status bits: RY/BY# pin, DQ7 (Data# Polling) and DQ6/DQ2 (toggle bits). After a program or erase cycle has been completed, the device automatically returns to the read mode. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory. This can be achieved in-system or via programming equipment. The device offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters the automatic sleep mode. The system can also place the device into the standby mode. Power consumption is greatly reduced in both modes. 90 70 90 60 70 90 25 30 35 S29JL064H 60 60 55 55 OE# Access (ns), tOE 25 70 N ot R ec om m en de d fo Max Access Time (ns), tACC CE# Access (ns), tCE ew 55 rN Standard Voltage Range: VCC = 2.7–3.6 V D Part Number Speed Option es ig n 2. Product Selector Guide Document Number: 002-01184 Rev. *B Page 4 of 55 S29JL064H 3. Block Diagram VCC VSS OE# Mux BYTE# Bank 1 Bank 2 es X-Decoder A21–A0 om m en Bank 3 Address Bank 4 Address X-Decoder Bank 4 N ot R ec Mux Bank 3 Y-gate de d A21–A0 X-Decoder DQ15–DQ0 fo DQ0–DQ15 Mux DQ15–DQ0 Control DQ15–DQ0 ew Status rN CE# BYTE# WP#/ACC STATE CONTROL & COMMAND REGISTER D A21–A0 RESET# WE# DQ15–DQ0 Bank 2 Address ig n RY/BY# DQ15–DQ0 A21–A0 X-Decoder Y-gate Bank 1 Address A21–A0 Document Number: 002-01184 Rev. *B Page 5 of 55 S29JL064H 4. Connection Diagrams Figure 4.1 48-Pin Standard TSOP ew rN om m en de d fo A16 BYTE# VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 ig n 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 D 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 es A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 WE# RESET# A21 WP#/ACC RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 B8 NC* NC* A7 B7 D7 E7 A14 F7 A15 G7 A16 H7 J7 BYTE# DQ15/A-1 L8 M8 NC* NC* K7 L7 M7 VSS NC* NC* A13 A12 ot NC* C6 D6 E6 F6 G6 H6 J6 K6 A9 A8 A10 A11 DQ7 DQ14 DQ13 DQ6 N NC* C7 R A8 ec Figure 4.2 63-Ball Fine-Pitch BGA (FBGA) - Top View, Balls Facing Down C5 D5 E5 F5 G5 H5 J5 K5 WE# RESET# A21 A19 DQ5 DQ12 VCC DQ4 C4 D4 RY/BY# WP#/ACC E4 F4 G4 H4 J4 K4 A18 A20 DQ2 DQ10 DQ11 DQ3 C3 D3 E3 F3 G3 H3 J3 K3 A7 A17 A6 A5 DQ0 DQ8 DQ9 DQ1 A2 C2 D2 E2 F2 G2 H2 J2 K2 L2 M2 NC* A3 A4 A2 A1 A0 CE# OE# VSS NC* NC* A1 B1 NC* NC* * Balls are shorted together via the substrate but not connected to the die. Document Number: 002-01184 Rev. *B L1 M1 NC* NC* Page 6 of 55 S29JL064H Pin Description DQ15/A-1 CE# 22 Addresses 15 Data Inputs/Outputs (x16-only devices) DQ15 (Data Input/Output, word mode), A-1 (LSB Address Input, byte mode) Chip Enable OE# Output Enable WE# Write Enable WP#/ACC RESET# Hardware Write Protect/Acceleration Pin Hardware Reset Pin, Active Low Selects 8-bit or 16-bit mode Ready/Busy Output 3.0 volt-only single power supply (see Product Selector Guide on page 4 for speed options and voltage supply tolerances) es VCC ig n BYTE# RY/BY# VSS Device Ground NC Pin Not Connected Internally D A21–A0 DQ14–DQ0 ew 5. fo rN 6. Logic Symbol 22 d 16 or 8 de A21–A0 DQ15–DQ0 om m en (A-1) CE# OE# ec WE# R WP#/ACC RY/BY# ot RESET# N BYTE# Document Number: 002-01184 Rev. *B Page 7 of 55 S29JL064H 7. Ordering Information The order number is formed by a valid combinations of the following: S29JL064H 55 T A I 00 0 Packing Type 0 = Tray 3 = 13-inch Tape and Reel Model Number (Additional Ordering Options) 00 = Standard Configuration Temperature Range I = Industrial (–40C to +85C) ig n Package Material Set A = Standard F = Pb-free D ew rN Speed Option 55 = 55 ns 60 = 60 ns 70 = 70 ns 90 = 90 ns es Package Type T = Thin Small Outline Package (TSOP) Standard Pinout B = Fine-pitch Ball-Grid Array Package (Not for new designs - (See Note)) fo Product Family S29JL064H: 3.0 Volt-only, 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) Simultaneous Read/Write Flash Memory Manufactured on 130 nm process technology om m en de d Note For new designs involving Fine-pitch Ball Grid Array (FBGA) packages, S29PL064J supersedes S29JL064H and is the factory recommended migration path. Please refer to the S29PL-J Data Sheet for specifications and ordering information. S29JL064H Valid Combinations Device Family Speed Option Package, Material, Set and Temperature Range Model Number Packing Type S29JL064H ec TAI TFI 55, 60, 70, 90 00 0, 3 (Note 2) R BAI, BFI Package Description TS048 (Note 3) TSOP FBE063 (Note 4) Fine-pitch BGA ot Notes 1. Listed TSOP part numbers describe products based on Copper (Cu) leadframes. Contact your local sales office for products based on Alloy-42 leadframes. N 2. Type 0 is standard. Specify other options as required. 3. TSOP package marking omits packing type designator from ordering part number. 4. BGA package marking omits leading S29 and packing type designator from ordering part number. Document Number: 002-01184 Rev. *B Page 8 of 55 S29JL064H 8. Device Bus Operations This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information needed to execute the command. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. Table lists the device bus operations, the inputs and control levels they require, and the resulting output. The following subsections describe each of these operations in further detail. S29JL064H Device Bus Operations DQ15–DQ8 OE# WE# RESET# BYTE# = VIH Read L L H H L/H AIN DOUT Write L H L H (Note 3) AIN DIN L/H X High-Z X X VCC 0.3 V Output Disable L H H H L/H X High-Z Reset X X X L L/H X High-Z (Note 2) Temporary Sector Unprotect L VID L/H L H L VID (Note 3) SA, A6 = H, A1 = H, A0 = L X X X VID (Note 3) AIN High-Z High-Z High-Z DIN High-Z High-Z X DIN X X DIN DIN High-Z DIN ew H DOUT High-Z X rN Sector Unprotect L fo Sector Protect (Note 2) SA, A6 = L, A1 = H, A0 = L DQ14–DQ8 = High-Z, DQ15 = A-1 d Standby DQ7– DQ0 es VCC 0.3 V BYTE# = VIL ig n CE# Addresses (Note 2) D Operation WP#/ ACC R ec om m en de Legend L = Logic Low = VIL H = Logic High = VIH VID = 11.5–12.5 V VHH = 9.0 ± 0.5 V X = Don’t Care SA = Sector Address AIN = Address In DIN = Data In DOUT = Data Out ot Notes: 1. Addresses are A21:A0 in word mode (BYTE# = VIH), A21:A-1 in byte mode (BYTE# = VIL). N 2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See Sector/Sector Block Protection and Unprotection on page 17. 3. If WP#/ACC = VIL, sectors 0, 1, 140, and 141 remain protected. If WP#/ACC = VIH, protection on sectors 0, 1, 140, and 141 depends on whether they were last protected or unprotected using the method described in Sector/Sector Block Protection and Unprotection on page 17. If WP#/ACC = VHH, all sectors will be unprotected. 8.1 Word/Byte Configuration The BYTE# pin controls whether the device data I/O pins operate in the byte or word configuration. If the BYTE# pin is set at logic ‘1’, the device is in word configuration, DQ15–DQ0 are active and controlled by CE# and OE#. If the BYTE# pin is set at logic ‘0’, the device is in byte configuration, and only data I/O pins DQ7–DQ0 are active and controlled by CE# and OE#. The data I/O pins DQ14–DQ8 are tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function. Document Number: 002-01184 Rev. *B Page 9 of 55 S29JL064H 8.2 Requirements for Reading Array Data To read array data from the outputs, the system must drive the CE# and OE# pins to VIL. CE# is the power control and selects the device. OE# is the output control and gates array data to the output pins. WE# should remain at VIH. The BYTE# pin determines whether the device outputs array data in words or bytes. The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. Each bank remains enabled for read access until the command register contents are altered. Refer to Read-Only Operations on page 41 for timing specifications and to Figure 17.1 on page 41 for the timing diagram. ICC1 in DC Characteristics on page 37 represents the active current specification for reading array data. Writing Commands/Command Sequences ig n 8.3 es To write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH. D For program operations, the BYTE# pin determines whether the device accepts program data in bytes or words. Refer to Word/Byte Configuration on page 9 for more information. rN ew The device features an Unlock Bypass mode to facilitate faster programming. Once a bank enters the Unlock Bypass mode, only two write cycles are required to program a word or byte, instead of four. Byte/Word Program Command Sequence on page 27 has details on programming data to the device using both standard and Unlock Bypass command sequences. d fo An erase operation can erase one sector, multiple sectors, or the entire device. Table on page 15 indicates the address space that each sector occupies. Similarly, a sector address is the address bits required to uniquely select a sector. Command Definitions on page 25 has details on erasing a sector or the entire chip, or suspending/resuming the erase operation. de The device address space is divided into four banks. A bank address is the address bits required to uniquely select a bank. 8.3.1 om m en ICC2 in the DC Characteristics on page 37 represents the active current specification for the write mode. AC Characteristics on page 41 contains timing specification tables and timing diagrams for write operations. Accelerated Program Operation ec The device offers accelerated program operations through the ACC function. This is one of two functions provided by the WP#/ACC pin. This function is primarily intended to allow faster manufacturing throughput at the factory. N ot R If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock Bypass mode, temporarily unprotects any protected sectors, and uses the higher voltage on the pin to reduce the time required for program operations. The system would use a two-cycle program command sequence as required by the Unlock Bypass mode. Removing VHH from the WP#/ ACC pin returns the device to normal operation. Note that VHH must not be asserted on WP#/ACC for operations other than accelerated programming, or device damage may result. In addition, the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result. Write Protect (WP#) on page 18 for related information. 8.3.2 Autoselect Functions If the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on DQ15–DQ0. Standard read cycle timings apply in this mode. Refer to Autoselect Mode on page 16 and Autoselect Command Sequence on page 26 for more information. 8.4 Simultaneous Read/Write Operations with Zero Latency This device is capable of reading data from one bank of memory while programming or erasing in the other bank of memory. An erase operation may also be suspended to read from or program to another location within the same bank (except the sector being erased). Figure 17.8 on page 46 shows how read and write cycles may be initiated for simultaneous operation with zero latency. ICC6 and ICC7 in the DC Characteristics on page 37 represent the current specifications for read-while-program and read-whileerase, respectively. Document Number: 002-01184 Rev. *B Page 10 of 55 S29JL064H 8.5 Standby Mode When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. The device enters the CMOS standby mode when the CE# and RESET# pins are both held at VCC ± 0.3 V. (Note that this is a more restricted voltage range than VIH.) If CE# and RESET# are held at VIH, but not within VCC ± 0.3 V, the device will be in the standby mode, but the standby current will be greater. The device requires standard access time (t CE) for read access when the device is in either of these standby modes, before it is ready to read data. If the device is deselected during erasure or programming, the device draws active current until the operation is completed. ICC3 in DC Characteristics on page 37 represents the standby current specification. 8.6 Automatic Sleep Mode D es ig n The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. ICC5 in DC Characteristics on page 37 represents the automatic sleep mode current specification. RESET#: Hardware Reset Pin ew 8.7 d fo rN The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/ write commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity. om m en de Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS±0.3 V, the device draws CMOS standby current (ICC4). If RESET# is held at VIL but not within VSS±0.3 V, the standby current will be greater. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash memory, enabling the system to read the boot-up firmware from the Flash memory. R ec If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY# to determine whether the reset operation is complete. If RESET# is asserted when a program or erase operation is not executing (RY/BY# pin is “1”), the reset operation is completed within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after the RESET# pin returns to VIH. N ot Refer to AC Characteristics on page 41 for RESET# parameters and to Figure 17.2 on page 42 for the timing diagram. Document Number: 002-01184 Rev. *B Page 11 of 55 S29JL064H 8.8 Output Disable Mode When the OE# input is at VIH, output from the device is disabled. The output pins are placed in the high impedance state. S29JL064H Sector Architecture (Sheet 1 of 4) Sector Size (Kbytes/Kwords) (x8) Address Range (x16) Address Range SA0 0000000000 8/4 000000h–001FFFh 00000h–00FFFh SA1 0000000001 8/4 002000h–003FFFh 01000h–01FFFh SA2 0000000010 8/4 004000h–005FFFh 02000h–02FFFh SA3 0000000011 8/4 006000h–007FFFh 03000h–03FFFh SA4 0000000100 8/4 008000h–009FFFh 04000h–04FFFh SA5 0000000101 8/4 00A000h–00BFFFh 05000h–05FFFh SA6 0000000110 8/4 00C000h–00DFFFh 06000h–06FFFh SA7 0000000111 8/4 00E000h–00FFFFh 07000h–07FFFh SA8 0000001xxx 64/32 010000h–01FFFFh 08000h–0FFFFh SA9 0000010xxx 64/32 020000h–02FFFFh SA10 0000011xxx 64/32 030000h–03FFFFh es ig n Sector Address A21–A12 ew D 10000h–17FFFh 18000h–1FFFFh 0000100xxx 64/32 040000h–04FFFFh 20000h–27FFFh 0000101xxx 64/32 050000h–05FFFFh 28000h–2FFFFh SA13 0000110xxx 64/32 060000h–06FFFFh 30000h–37FFFh SA14 0000111xxx 64/32 070000h–07FFFFh 38000h–3FFFFh SA15 0001000xxx 64/32 080000h–08FFFFh 40000h–47FFFh SA16 0001001xxx 64/32 090000h–09FFFFh 48000h–4FFFFh SA17 0001010xxx 64/32 SA18 0001011xxx 64/32 SA19 0001100xxx SA20 0001101xxx SA21 0001110xxx SA22 0001111xxx de d fo rN SA11 SA12 0A0000h–0AFFFFh 50000h–57FFFh 0B0000h–0BFFFFh 58000h–5FFFFh 64/32 0C0000h–0CFFFFh 60000h–67FFFh 64/32 0D0000h–0DFFFFh 68000h–6FFFFh 64/32 0E0000h–0EFFFFh 70000h–77FFFh 64/32 0F0000h–0FFFFFh 78000h–7FFFFh N ot R ec Bank 1 Sector om m en Bank Document Number: 002-01184 Rev. *B Page 12 of 55 S29JL064H S29JL064H Sector Architecture (Sheet 2 of 4) Sector Sector Address A21–A12 Sector Size (Kbytes/Kwords) (x8) Address Range SA23 0010000xxx 64/32 100000h–10FFFFh 80000h–87FFFh SA24 0010001xxx 64/32 110000h–11FFFFh 88000h–8FFFFh SA25 0010010xxx 64/32 120000h–12FFFFh 90000h–97FFFh SA26 0010011xxx 64/32 130000h–13FFFFh 98000h–9FFFFh (x16) Address Range SA27 0010100xxx 64/32 140000h–14FFFFh A0000h–A7FFFh SA28 0010101xxx 64/32 150000h–15FFFFh A8000h–AFFFFh SA29 0010110xxx 64/32 160000h–16FFFFh B0000h–B7FFFh SA30 0010111xxx 64/32 170000h–17FFFFh B8000h–BFFFFh 0011000xxx 64/32 180000h–18FFFFh C0000h–C7FFFh 0011001xxx 64/32 190000h–19FFFFh C8000h–CFFFFh ig n SA31 SA32 0011010xxx 64/32 1A0000h–1AFFFFh 0011011xxx 64/32 1B0000h–1BFFFFh D0000h–D7FFFh SA35 0011000xxx 64/32 1C0000h–1CFFFFh SA36 0011101xxx 64/32 1D0000h–1DFFFFh SA37 0011110xxx 64/32 1E0000h–1EFFFFh F0000h–F7FFFh SA38 0011111xxx 64/32 1F0000h–1FFFFFh F8000h–FFFFFh es SA33 SA34 D8000h–DFFFFh D ew 64/32 200000h–20FFFFh 100000h–107FFFh 0100001xxx 64/32 210000h–21FFFFh 108000h–10FFFFh SA41 0100010xxx 64/32 220000h–22FFFFh 110000h–117FFFh SA42 0101011xxx 64/32 118000h–11FFFFh 0100100xxx 64/32 SA44 0100101xxx 64/32 SA45 0100110xxx SA46 0100111xxx Bank 2 230000h–23FFFFh de SA43 fo 0100000xxx SA40 d rN E0000h–E7FFFh E8000h–EFFFFh SA39 240000h–24FFFFh 120000h–127FFFh 250000h–25FFFFh 128000h–12FFFFh om m en Bank 64/32 260000h–26FFFFh 130000h–137FFFh 64/32 270000h–27FFFFh 138000h–13FFFFh 64/32 280000h–28FFFFh 140000h–147FFFh 64/32 290000h–29FFFFh 148000h–14FFFFh 0101000xxx SA48 0101001xxx SA49 0101010xxx 64/32 2A0000h–2AFFFFh 150000h–157FFFh SA50 0101011xxx 64/32 2B0000h–2BFFFFh 158000h–15FFFFh R ec SA47 0101100xxx 64/32 2C0000h–2CFFFFh 160000h–167FFFh 0101101xxx 64/32 2D0000h–2DFFFFh 168000h–16FFFFh SA53 0101110xxx 64/32 2E0000h–2EFFFFh 170000h–177FFFh 0101111xxx 64/32 2F0000h–2FFFFFh 178000h–17FFFFh N SA54 ot SA51 SA52 SA55 0110000xxx 64/32 300000h–30FFFFh 180000h–187FFFh SA56 0110001xxx 64/32 310000h–31FFFFh 188000h–18FFFFh SA57 0110010xxx 64/32 320000h–32FFFFh 190000h–197FFFh SA58 0110011xxx 64/32 330000h–33FFFFh 198000h–19FFFFh SA59 0110100xxx 64/32 340000h–34FFFFh 1A0000h–1A7FFFh SA60 0110101xxx 64/32 350000h–35FFFFh 1A8000h–1AFFFFh SA61 0110110xxx 64/32 360000h–36FFFFh 1B0000h–1B7FFFh SA62 0110111xxx 64/32 370000h–37FFFFh 1B8000h–1BFFFFh SA63 0111000xxx 64/32 380000h–38FFFFh 1C0000h–1C7FFFh SA64 0111001xxx 64/32 390000h–39FFFFh 1C8000h–1CFFFFh SA65 0111010xxx 64/32 3A0000h–3AFFFFh 1D0000h–1D7FFFh SA66 0111011xxx 64/32 3B0000h–3BFFFFh 1D8000h–1DFFFFh SA67 0111100xxx 64/32 3C0000h–3CFFFFh 1E0000h–1E7FFFh SA68 0111101xxx 64/32 3D0000h–3DFFFFh 1E8000h–1EFFFFh Document Number: 002-01184 Rev. *B Page 13 of 55 S29JL064H S29JL064H Sector Architecture (Sheet 3 of 4) Sector Sector Address A21–A12 Sector Size (Kbytes/Kwords) (x8) Address Range (x16) Address Range SA71 1000000xxx 64/32 400000h–40FFFFh 200000h–207FFFh SA72 1000001xxx 64/32 410000h–41FFFFh 208000h–20FFFFh SA73 1000010xxx 64/32 420000h–42FFFFh 210000h–217FFFh SA74 1000011xxx 64/32 430000h–43FFFFh 218000h–21FFFFh SA75 1000100xxx 64/32 440000h–44FFFFh 220000h–227FFFh SA76 1000101xxx 64/32 450000h–45FFFFh 228000h–22FFFFh SA77 1000110xxx 64/32 460000h–46FFFFh 230000h–237FFFh SA78 1000111xxx 64/32 470000h–47FFFFh 238000h–23FFFFh 1001000xxx 64/32 480000h–48FFFFh 240000h–247FFFh SA80 1001001xxx 64/32 490000h–49FFFFh 248000h–24FFFFh SA81 1001010xxx 64/32 4A0000h–4AFFFFh SA82 1001011xxx 64/32 4B0000h–4BFFFFh ig n SA79 es 250000h–257FFFh 258000h–25FFFFh 1001100xxx 64/32 4C0000h–4CFFFFh 1001101xxx 64/32 4D0000h–4DFFFFh SA85 1001110xxx 64/32 4E0000h–4EFFFFh 270000h–277FFFh SA86 1001111xxx 64/32 4F0000h–4FFFFFh 278000h–27FFFFh ew 268000h–26FFFFh 1010000xxx 64/32 500000h–50FFFFh 280000h–28FFFFh 1010001xxx 64/32 510000h–51FFFFh 288000h–28FFFFh SA89 1010010xxx 64/32 520000h–52FFFFh 290000h–297FFFh SA90 1010011xxx 64/32 298000h–29FFFFh 1010100xxx 64/32 1010101xxx 64/32 SA93 1010110xxx SA94 1010111xxx SA95 1011000xxx SA96 1011001xxx 540000h–54FFFFh 2A0000h–2A7FFFh 550000h–55FFFFh 2A8000h–2AFFFFh 64/32 560000h–56FFFFh 2B0000h–2B7FFFh 64/32 570000h–57FFFFh 2B8000h–2BFFFFh 64/32 580000h–58FFFFh 2C0000h–2C7FFFh 64/32 590000h–59FFFFh 2C8000h–2CFFFFh ec Bank 3 530000h–53FFFFh de SA91 SA92 fo SA87 SA88 d rN 260000h–267FFFh D SA83 SA84 om m en Bank 1011010xxx 64/32 5A0000h–5AFFFFh 2D0000h–2D7FFFh 1011011xxx 64/32 5B0000h–5BFFFFh 2D8000h–2DFFFFh R SA97 SA98 1011100xxx 64/32 5C0000h–5CFFFFh 2E0000h–2E7FFFh 1011101xxx 64/32 5D0000h–5DFFFFh 2E8000h–2EFFFFh SA101 1011110xxx 64/32 5E0000h–5EFFFFh 2F0000h–2FFFFFh 1011111xxx 64/32 5F0000h–5FFFFFh 2F8000h–2FFFFFh SA103 1100000xxx 64/32 600000h–60FFFFh 300000h–307FFFh SA104 1100001xxx 64/32 610000h–61FFFFh 308000h–30FFFFh SA105 1100010xxx 64/32 620000h–62FFFFh 310000h–317FFFh SA106 1100011xxx 64/32 630000h–63FFFFh 318000h–31FFFFh N SA102 ot SA99 SA100 SA107 1100100xxx 64/32 640000h–64FFFFh 320000h–327FFFh SA108 1100101xxx 64/32 650000h–65FFFFh 328000h–32FFFFh SA109 1100110xxx 64/32 660000h–66FFFFh 330000h–337FFFh SA110 1100111xxx 64/32 670000h–67FFFFh 338000h–33FFFFh SA111 1101000xxx 64/32 680000h–68FFFFh 340000h–347FFFh SA112 1101001xxx 64/32 690000h–69FFFFh 348000h–34FFFFh SA113 1101010xxx 64/32 6A0000h–6AFFFFh 350000h–357FFFh SA114 1101011xxx 64/32 6B0000h–6BFFFFh 358000h–35FFFFh SA115 1101100xxx 64/32 6C0000h–6CFFFFh 360000h–367FFFh SA116 1101101xxx 64/32 6D0000h–6DFFFFh 368000h–36FFFFh Document Number: 002-01184 Rev. *B Page 14 of 55 S29JL064H S29JL064H Sector Architecture (Sheet 4 of 4) Sector Address A21–A12 Sector Size (Kbytes/Kwords) (x8) Address Range (x16) Address Range SA119 1110000xxx 64/32 700000h–70FFFFh 380000h–387FFFh SA120 1110001xxx 64/32 710000h–71FFFFh 388000h–38FFFFh SA121 1110010xxx 64/32 720000h–72FFFFh 390000h–397FFFh SA122 1110011xxx 64/32 730000h–73FFFFh 398000h–39FFFFh 1110100xxx 64/32 740000h–74FFFFh 3A0000h–3A7FFFh SA124 1110101xxx 64/32 750000h–75FFFFh 3A8000h–3AFFFFh SA125 1110110xxx 64/32 760000h–76FFFFh 3B0000h–3B7FFFh SA126 1110111xxx 64/32 770000h–77FFFFh 3B8000h–3BFFFFh SA127 1111000xxx 64/32 780000h–78FFFFh 3C0000h–3C7FFFh SA128 1111001xxx 64/32 790000h–79FFFFh 3C8000h–3CFFFFh SA129 1111010xxx 64/32 7A0000h–7AFFFFh SA130 1111011xxx 64/32 7B0000h–7BFFFFh SA131 1111100xxx 64/32 7C0000h–7CFFFFh SA132 1111101xxx 64/32 7D0000h–7DFFFFh SA133 1111110xxx 64/32 7E0000h–7EFFFFh SA134 1111111000 8/4 7F0000h–7F1FFFh SA135 1111111001 8/4 7F2000h–7F3FFFh 3F9000h–3F9FFFh SA136 1111111010 8/4 7F4000h–7F5FFFh 3FA000h–3FAFFFh SA137 1111111011 8/4 7F6000h–7F7FFFh 3FB000h–3FBFFFh SA138 1111111100 8/4 SA139 1111111101 8/4 SA140 1111111110 8/4 SA141 1111111111 es 3D0000h–3D7FFFh 3D8000h–3DFFFFh D ew rN fo 3E0000h–3E7FFFh 3E8000h–3EFFFFh 3F0000h–3F7FFFh 3F8000h–3F8FFFh d 8/4 ig n SA123 3FC000h–3FCFFFh 7FA000h–7FBFFFh 3FD000h–3FDFFFh 7FC000h–7FDFFFh 3FE000h–3FEFFFh 7FE000h–7FFFFFh 3FF000h–3FFFFFh 7F8000h–7F9FFFh de Bank 4 Sector om m en Bank ec Note The address range is A21:A-1 in byte mode (BYTE# = VIL) or A21:A0 in word mode (BYTE# = VIH). 2 A21–A19 ot 1 000 N Bank R Bank Address 001, 010, 011 3 100, 101, 110 4 111 Secured Silicon Sector Addresses Device Sector Size (x8) Address Range (x16) Address Range S29JL064H 256 bytes 000000h–0000FFh 000000h–00007Fh Document Number: 002-01184 Rev. *B Page 15 of 55 S29JL064H 8.9 Autoselect Mode The autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on DQ7–DQ0. This mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. However, the autoselect codes can also be accessed in-system through the command register. ig n When using programming equipment, the autoselect mode requires VID on address pin A9. Address pins must be as shown in Table . In addition, when verifying sector protection, the sector address must appear on the appropriate highest order address bits (see Table on page 15). Table shows the remaining address bits that are don’t care. When all necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on DQ7–DQ0. However, the autoselect codes can also be accessed in-system through the command register, for instances when the S29JL064 is erased or programmed in a system without access to high voltage on the A9 pin. The command sequence is illustrated in Table on page 30. Note that if a Bank Address (BA) on address bits A21, A20, and A19 is asserted during the third write cycle of the autoselect command, the host system can read autoselect data from that bank and then immediately read array data from another bank, without exiting the autoselect mode. es To access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in Table on page 30. This method does not require VID. Refer to Autoselect Command Sequence on page 26 for more information. CE# OE# WE# Manufacturer ID: Spansion Products L L H BA X VID X L X L L H BA X VID X Read Cycle 1 H SA Secured Silicon Indicator Bit (DQ6, DQ7) L L H BA L L X L L L H 22h X H H L 22h H H H X 01h 7Eh H X VID X L X L L H L X X 01h (protected), 00h (unprotected) X VID X L X L L H H X X 81h (factory locked), 01h (not factory/ customer locked) X 02h 22h 01h R ot N Legend L = Logic Low = VIL H = Logic High = VIH BA = Bank Address SA = Sector Address X = Don’t care. L L L om m en L A0 ec L A1 DQ7 to DQ0 H Read Cycle 3 Sector Protection Verification A2 BYTE# = VIL d L L DQ15 to DQ8 BYTE# = VIH de Read Cycle 2 A3 ew A6 A5 to A4 rN Description Device ID A9 A8 to A7 fo A11 to A10 A21 to A12 D S29JL064H Autoselect Codes, (High Voltage Method) Document Number: 002-01184 Rev. *B Page 16 of 55 S29JL064H 8.10 Sector/Sector Block Protection and Unprotection (Note: For the following discussion, the term sector applies to both sectors and sector blocks. A sector block consists of two or more adjacent sectors that are protected or unprotected at the same time (see Table ). The hardware sector protection feature disables both program and erase operations in any sector. The hardware sector unprotection feature re-enables both program and erase operations in previously protected sectors. Sector protection/unprotection can be implemented via two methods. S29JL064H Boot Sector/Sector Block Addresses for Protection/Unprotection (Sheet 1 of 2) A21–A12 Sector/Sector Block Size SA0 0000000000 8 Kbytes SA1 0000000001 8 Kbytes SA2 0000000010 8 Kbytes SA3 0000000011 8 Kbytes 0000000100 8 Kbytes 0000000101 8 Kbytes SA6 0000000110 8 Kbytes SA7 0000000111 8 Kbytes SA8–SA10 0000001XXX, 0000010XXX, 0000011XXX, SA11–SA14 00001XXXXX SA15–SA18 00010XXXXX 00101XXXXX SA31-SA34 00110XXXXX D ew rN fo SA27-SA30 d 00100XXXXX 256 (4x64) Kbytes de 00011XXXXX SA23–SA26 192 (3x64) Kbytes om m en SA19–SA22 es SA4 SA5 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 00111XXXXX 256 (4x64) Kbytes SA39-SA42 01000XXXXX 256 (4x64) Kbytes SA43-SA46 01001XXXXX 256 (4x64) Kbytes SA47-SA50 01010XXXXX 256 (4x64) Kbytes ec SA35-SA38 SA67–SA70 256 (4x64) Kbytes 256 (4x64) Kbytes 01101XXXXX 256 (4x64) Kbytes ot 01110XXXXX N SA59–SA62 SA63–SA66 01011XXXXX 01100XXXXX R SA51-SA54 SA55–SA58 256 (4x64) Kbytes 01111XXXXX 256 (4x64) Kbytes SA71–SA74 10000XXXXX 256 (4x64) Kbytes SA75–SA78 10001XXXXX 256 (4x64) Kbytes SA79–SA82 10010XXXXX 256 (4x64) Kbytes SA83–SA86 10011XXXXX 256 (4x64) Kbytes SA87–SA90 10100XXXXX 256 (4x64) Kbytes SA91–SA94 10101XXXXX 256 (4x64) Kbytes SA95–SA98 10110XXXXX 256 (4x64) Kbytes 256 (4x64) Kbytes SA99–SA102 10111XXXXX SA103–SA106 11000XXXXX 256 (4x64) Kbytes SA107–SA110 11001XXXXX 256 (4x64) Kbytes SA111–SA114 11010XXXXX 256 (4x64) Kbytes SA115–SA118 11011XXXXX 256 (4x64) Kbytes SA119–SA122 11100XXXXX 256 (4x64) Kbytes SA123–SA126 11101XXXXX 256 (4x64) Kbytes Document Number: 002-01184 Rev. *B ig n Sector Page 17 of 55 S29JL064H S29JL064H Boot Sector/Sector Block Addresses for Protection/Unprotection (Sheet 2 of 2) A21–A12 Sector/Sector Block Size 11110XXXXX 256 (4x64) Kbytes SA131–SA133 1111100XXX, 1111101XXX, 1111110XXX 192 (3x64) Kbytes 1111111000 8 Kbytes SA135 1111111001 8 Kbytes SA136 1111111010 8 Kbytes SA137 1111111011 8 Kbytes SA138 1111111100 8 Kbytes SA139 1111111101 8 Kbytes SA140 1111111110 8 Kbytes SA141 1111111111 8 Kbytes es SA134 ig n Sector SA127–SA130 rN ew D Sector protect/Sector Unprotect requires VID on the RESET# pin only, and can be implemented either in-system or via programming equipment. Figure 8.2 on page 20 shows the algorithms and Figure 17.13 on page 49 shows the timing diagram. For sector unprotect, all unprotected sectors must first be protected prior to the first sector unprotect write cycle. Note that the sector unprotect algorithm unprotects all sectors in parallel. All previously protected sectors must be individually re-protected. To change data in protected sectors efficiently, the temporary sector unprotect function is available. See Temporary Sector Unprotect on page 48. fo The device is shipped with all sectors unprotected. Optional Spansion programming service enable programming and protecting sectors at the factory prior to shipping the device. Contact your local sales office for details. Write Protect (WP#) om m en 8.11 de d It is possible to determine whether a sector is protected or unprotected. See Autoselect Mode on page 16 for details. The Write Protect function provides a hardware method of protecting without using VID. This function is one of two provided by the WP#/ACC pin. ec If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in sectors 0, 1, 140, and 141, independently of whether those sectors were protected or unprotected using the method described in Sector/Sector Block Protection and Unprotection on page 17. ot R If the system asserts VIH on the WP#/ACC pin, the device reverts to whether sectors 0, 1, 140, and 141 were last set to be protected or unprotected. That is, sector protection or unprotection for these sectors depends on whether they were last protected or unprotected using the method described in Sector/Sector Block Protection and Unprotection on page 17. WP#/ACC Modes N Note that the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result. WP# Input Voltage Device Mode VIL Disables programming and erasing in SA0, SA1, SA140, and SA141 VIH Enables programming and erasing in SA0, SA1, SA140, and SA141, dependent on whether they were last protected or unprotected. VHH Enables accelerated programming (ACC). See Accelerated Program Operation on page 10. Document Number: 002-01184 Rev. *B Page 18 of 55 S29JL064H 8.12 Temporary Sector Unprotect (Note: For the following discussion, the term sector applies to both sectors and sector blocks. A sector block consists of two or more adjacent sectors that are protected or unprotected at the same time (see Table on page 17). This feature allows temporary unprotection of previously protected sectors to change data in-system. The Temporary Sector Unprotect mode is activated by setting the RESET# pin to VID. During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. Once VID is removed from the RESET# pin, all the previously protected sectors are protected again. Figure 8.1 shows the algorithm, and Figure 17.12 on page 48 shows the timing diagrams, for this feature. If the WP#/ACC pin is at VIL, sectors 0, 1, 140, and 141 will remain protected during the Temporary sector Unprotect mode. Figure 8.1 Temporary Sector Unprotect Operation ig n START rN Perform Erase or Program Operations ew D es RESET# = VID (Note 1) de d fo RESET# = VIH om m en Temporary Sector Unprotect Completed (Note 2) Notes 1. All protected sectors unprotected (If WP#/ACC = VIL, sectors 0, 1, 140, and 141 will remain protected). N ot R ec 2. All previously protected sectors are protected once again. Document Number: 002-01184 Rev. *B Page 19 of 55 S29JL064H Figure 8.2 In-System Sector Protect/Unprotect Algorithms START START Protect all sectors: The indicated portion of the sector protect algorithm must be performed for all unprotected sectors prior to issuing the first sector unprotect address PLSCNT = 1 RESET# = VID Wait 1 µs Temporary Sector Unprotect Mode No PLSCNT = 1 RESET# = VID Wait 1 µs No First Write Cycle = 60h? First Write Cycle = 60h? Yes Yes Set up sector address es D ew Set up first sector address rN om m en Read from sector address with A6=0, A3=0, A2=0, A1=1, A0=0 No ot R Yes Yes Protect another sector? N Device failed Wait 15 ms Increment PLSCNT No A6=1, A3=0, A2=0, A1=1, A0=0 Read from sector address with A6=1, A3=0, PLSCNT = 1000? Yes Device failed Write reset command Sector Protect complete A2=0, A1=1, A0=0 No Remove VID from RESET# Sector Protect Algorithm Verify Sector Unprotect: Write 40h to sector address with ec No Yes A6=1, A3=0, A2=0, A1=1, A0=0 de A2=0, A1=1, A0=0 fo Reset PLSCNT = 1 Sector Unprotect: Write 60h to sector address with d Verify Sector Protect: Write 40h to sector address with A6=0, A3=0, Data = 01h? All sectors protected? Yes Wait 150 µs PLSCNT = 25? ig n No Sector Protect: Write 60h to sector address with A6=0, A3=0, A2=0, A1=1, A0=0 Increment PLSCNT Temporary Sector Unprotect Mode Set up next sector address No Data = 00h? Yes Last sector verified? No Yes Sector Unprotect Algorithm Remove VID from RESET# Write reset command Sector Unprotect complete Document Number: 002-01184 Rev. *B Page 20 of 55 S29JL064H 8.13 Secured Silicon Sector Flash Memory Region The Secured Silicon Sector feature provides a Flash memory region that enables permanent part identification through an Electronic Serial Number (ESN). The Secured Silicon Sector is 256 bytes in length, and uses a Secured Silicon Sector Indicator Bit (DQ7) to indicate whether or not the Secured Silicon Sector is locked when shipped from the factory. This bit is permanently set at the factory and cannot be changed, which prevents cloning of a factory locked part. This ensures the security of the ESN once the product is shipped to the field. The product is available with the Secured Silicon Sector either factory locked or customer lockable. The factory-locked version is always protected when shipped from the factory, and has the Secured Silicon Sector Indicator Bit permanently set to a 1. The customer-lockable version is shipped with the Secured Silicon Sector unprotected, allowing customers to utilize the that sector in any manner they choose. The customer-lockable version has the Secured Silicon Sector Indicator Bit permanently set to a 0. Thus, the Secured Silicon Sector Indicator Bit prevents customer-lockable devices from being used to replace devices that are factory locked. Factory Locked: Secured Silicon Sector Programmed and Protected At the Factory rN 8.13.1 ew D es ig n The system accesses the Secured Silicon Sector through a command sequence (see Enter Secured Silicon Sector/Exit Secured Silicon Sector Command Sequence on page 26). After the system has written the Enter Secured Silicon Sector command sequence, it may read the Secured Silicon Sector by using the addresses normally occupied by the boot sectors. This mode of operation continues until the system issues the Exit Secured Silicon Sector command sequence, or until power is removed from the device. On power-up, or following a hardware reset, the device reverts to sending commands to the first 256 bytes of Sector 0. Note that the ACC function and unlock bypass modes are not available when the Secured Silicon Sector is enabled. om m en de d fo In a factory locked device, the Secured Silicon Sector is protected when the device is shipped from the factory. The Secured Silicon Sector cannot be modified in any way. The device is preprogrammed with both a random number and a secure ESN. The 8-word random number is at addresses 000000h–000007h in word mode (or 000000h–00000Fh in byte mode). The secure ESN is programmed in the next 8 words at addresses 000008h–00000Fh (or 000010h–00001Fh in byte mode). The device is available preprogrammed with one of the following: A random, secure ESN only Customer code through Spansion programming services Both a random, secure ESN and customer code through Spansion programming services R Customer Lockable: Secured Silicon Sector NOT Programmed or Protected At the Factory ot 8.13.2 ec Contact an your local sales office for details on using Spansion programming services. N If the security feature is not required, the Secured Silicon Sector can be treated as an additional Flash memory space. The Secured Silicon Sector can be read any number of times, but can be programmed and locked only once. Note that the accelerated programming (ACC) and unlock bypass functions are not available when programming the Secured Silicon Sector. The Secured Silicon Sector area can be protected using one of the following procedures: Write the three-cycle Enter Secured Silicon Sector Region command sequence, and then follow the in-system sector protect algorithm as shown in Figure 8.2 on page 20, except that RESET# may be at either VIH or VID. This allows in-system protection of the Secured Silicon Sector Region without raising any device pin to a high voltage. Note that this method is only applicable to the Secured Silicon Sector. To verify the protect/unprotect status of the Secured Silicon Sector, follow the algorithm shown in Figure 8.3 on page 22. Once the Secured Silicon Sector is locked and verified, the system must write the Exit Secured Silicon Sector Region command sequence to return to reading and writing the remainder of the array. The Secured Silicon Sector lock must be used with caution since, once locked, there is no procedure available for unlocking the Secured Silicon Sector area and none of the bits in the Secured Silicon Sector memory space can be modified in any way. Document Number: 002-01184 Rev. *B Page 21 of 55 S29JL064H Figure 8.3 Secured Silicon Sector Protect Verify START If data = 00h, Secure Silicon Sector is unprotected. If data = 01h, Secure Silicon Sector is protected. RESET# = VIH or VID Wait 1 ms Write 60h to any address Write 40h to Secure Silicon Sector address with A6 = 0, A1 = 1, A0 = 0 ig n Remove VIH or VID from RESET# D es Write reset command Secure Silicon Sector Protect Verify complete fo rN ew Read from Secure Silicon Sector address with A6 = 0, A1 = 1, A0 = 0 d Hardware Data Protection de 8.14 Low VCC Write Inhibit ec 8.14.1 om m en The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to Table on page 30 for command definitions). In addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during VCC power-up and power-down transitions, or from system noise. 8.14.2 N ot R When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets to the read mode. Subsequent writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control pins to prevent unintentional writes when VCC is greater than VLKO. Write Pulse Glitch Protection Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle. 8.14.3 Logical Inhibit Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a logical one. 8.14.4 Power-Up Write Inhibit If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to the read mode on power-up. Document Number: 002-01184 Rev. *B Page 22 of 55 S29JL064H 9. Common Flash Memory Interface (CFI) The Common Flash Interface (CFI) specification outlines device and host system software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be deviceindependent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors can standardize their existing interfaces for long-term compatibility. This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h in word mode (or address AAh in byte mode), any time the device is ready to read array data. The system can read CFI information at the addresses given in Table on page 23 to Table on page 25. To terminate reading CFI data, the system must write the reset command.The CFI Query mode is not accessible when the device is executing an Embedded Program or embedded Erase algorithm. The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query mode, and the system can read CFI data at the addresses given in Table on page 23 to Table on page 25. The system must write the reset command to reading array data. CFI Query Identification String D es ig n For further information, please refer to the CFI Specification and CFI Publication 100. Contact your local sales office for copies of these documents. Addresses (Word Mode) Addresses (Byte Mode) Data 10h 11h 12h 20h 22h 24h 0051h 0052h 0059h Query Unique ASCII string “QRY” 13h 14h 26h 28h 0002h 0000h Primary OEM Command Set 15h 16h 2Ah 2Ch 0040h 0000h Address for Primary Extended Table 17h 18h 2Eh 30h 0000h 0000h Alternate OEM Command Set (00h = none exists) 19h 1Ah 32h 34h 0000h 0000h Address for Alternate OEM Extended Table (00h = none exists) 36h 1Ch 38h rN fo d de om m en R 0027h Description VCC Min. (write/erase) D7–D4: volt, D3–D0: 100 millivolt ot 1Bh Data N Addresses (Byte Mode) ec System Interface String Addresses (Word Mode) ew Description 0036h VCC Max. (write/erase) D7–D4: volt, D3–D0: 100 millivolt 1Dh 3Ah 0000h VPP Min. voltage (00h = no VPP pin present) 1Eh 3Ch 0000h VPP Max. voltage (00h = no VPP pin present) 1Fh 3Eh 0003h Typical timeout per single byte/word write 2N µs 20h 40h 0000h Typical timeout for Min. size buffer write 2N µs (00h = not supported) 21h 42h 0009h Typical timeout per individual block erase 2N ms 22h 44h 0000h Typical timeout for full chip erase 2N ms (00h = not supported) 23h 46h 0005h Max. timeout for byte/word write 2N times typical 24h 48h 0000h Max. timeout for buffer write 2N times typical 25h 4Ah 0004h Max. timeout per individual block erase 2N times typical 26h 4Ch 0000h Max. timeout for full chip erase 2N times typical (00h = not supported) Document Number: 002-01184 Rev. *B Page 23 of 55 S29JL064H Device Geometry Definition Addresses (Word Mode) Addresses (Byte Mode) Data 27h 4Eh 0017h Device Size = 2N byte 28h 29h 50h 52h 0002h 0000h Flash Device Interface description (refer to CFI publication 100) 2Ah 2Bh 54h 56h 0000h 0000h Max. number of byte in multi-byte write = 2N (00h = not supported) 2Ch 58h 0003h Number of Erase Block Regions within device 2Dh 2Eh 2Fh 30h 5Ah 5Ch 5Eh 60h 0007h 0000h 0020h 0000h Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100) 31h 32h 33h 34h 62h 64h 66h 68h 007Dh 0000h 0000h 0001h Erase Block Region 2 Information (refer to the CFI specification or CFI publication 100) 35h 36h 37h 38h 6Ah 6Ch 6Eh 70h 0007h 0000h 0020h 0000h Erase Block Region 3 Information (refer to the CFI specification or CFI publication 100) 39h 3Ah 3Bh 3Ch 72h 74h 76h 78h 0000h 0000h 0000h 0000h Erase Block Region 4 Information (refer to the CFI specification or CFI publication 100) N ot R ec om m en de d fo rN ew D es ig n Description Document Number: 002-01184 Rev. *B Page 24 of 55 S29JL064H Primary Vendor-Specific Extended Query Addresses (Word Mode) Addresses (Byte Mode) Data 40h 41h 42h 80h 82h 84h 0050h 0052h 0049h Query-unique ASCII string “PRI” 43h 86h 0031h Major version number, ASCII (reflects modifications to the silicon) 44h 88h 0033h Minor version number, ASCII (reflects modifications to the CFI table) 45h 8Ah 000Ch Address Sensitive Unlock (Bits 1-0) 0 = Required, 1 = Not Required Description Silicon Revision Number (Bits 7-2) 8Ch 0002h Erase Suspend 0 = Not Supported, 1 = To Read Only, 2 = To Read & Write 47h 8Eh 0001h Sector Protect 0 = Not Supported, X = Number of sectors per group 48h 90h 0001h Sector Temporary Unprotect 00 = Not Supported, 01 = Supported 49h 92h 0004h Sector Protect/Unprotect scheme 01 =29F040 mode, 02 = 29F016 mode, 03 = 29F400, 04 = 29LV800 mode 4Ah 94h 0077h Simultaneous Operation 00 = Not Supported, X = Number of Sectors (excluding Bank 1) 4Bh 96h 0000h Burst Mode Type 00 = Not Supported, 01 = Supported 4Ch 98h 0000h Page Mode Type 00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page 4Dh 9Ah 0085h 4Eh 9Ch 0095h 4Fh 9Eh 0001h 50h A0h 0001h 57h AEh 0004h 58h B0h 59h B2h 0030h 5Ah B4h 0030h 5Bh B6h 0017h fo rN ew D es ig n 46h d ACC (Acceleration) Supply Minimum de 00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV om m en ACC (Acceleration) Supply Maximum 00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV Top/Bottom Boot Sector Flag 00h = Uniform device, 01h = 8 x 8 Kbyte Sectors, Top And Bottom Boot with Write Protect, 02h = Bottom Boot Device, 03h = Top Boot Device, 04h= Both Top and Bottom Program Suspend ec 0 = Not supported, 1 = Supported ot R Bank Organization N 0017h 00 = Data at 4Ah is zero, X = Number of Banks Bank 1 Region Information X = Number of Sectors in Bank 1 Bank 2 Region Information X = Number of Sectors in Bank 2 Bank 3 Region Information X = Number of Sectors in Bank 3 Bank 4 Region Information X = Number of Sectors in Bank 4 10. Command Definitions Writing specific address and data commands or sequences into the command register initiates device operations. Table on page 30 defines the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. A reset command is then required to return the device to reading array data. All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on the rising edge of WE# or CE#, whichever happens first. Refer to AC Characteristics on page 41 for timing diagrams. Document Number: 002-01184 Rev. *B Page 25 of 55 S29JL064H 10.1 Reading Array Data The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. Each bank is ready to read array data after completing an Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the corresponding bank enters the erase-suspend-read mode, after which the system can read data from any non-erase-suspended sector within the same bank. The system can read array data using the standard read timing, except that if it reads at an address within erase-suspended sectors, the device outputs status data. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See Erase Suspend/Erase Resume Commands on page 30 for more information. The system must issue the reset command to return a bank to the read (or erase-suspend-read) mode if DQ5 goes high during an active program or erase operation, or if the bank is in the autoselect mode. See Reset Command on page 26 for more information. Reset Command es 10.2 ig n See Requirements for Reading Array Data on page 10 for more information. Read-Only Operations on page 41 provides the read parameters, and Figure 17.1 on page 41 shows the timing diagram. D Writing the reset command resets the banks to the read or erase-suspend-read mode. Address bits are don’t cares for this command. rN ew The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the bank to which the system was writing to the read mode. Once erasure begins, however, the device ignores reset commands until the operation is complete. de d fo The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the bank to which the system was writing to the read mode. If the program command sequence is written to a bank that is in the Erase Suspend mode, writing the reset command returns that bank to the erase-suspend-read mode. Once programming begins, however, the device ignores reset commands until the operation is complete. om m en The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to the read mode. If a bank entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns that bank to the erase-suspend-read mode. Autoselect Command Sequence R 10.3 ec If DQ5 goes high during a program or erase operation, writing the reset command returns the banks to the read mode (or erasesuspend-read mode if that bank was in Erase Suspend). N ot The autoselect command sequence allows the host system to access the manufacturer and device codes, and determine whether or not a sector is protected. The autoselect command sequence may be written to an address within a bank that is either in the read or erase-suspend-read mode. The autoselect command may not be written while the device is actively programming or erasing in another bank. The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle that contains the bank address and the autoselect command. The bank then enters the autoselect mode. The system may read any number of autoselect codes without re-initiating the command sequence. Table on page 30 shows the address and data requirements. To determine sector protection information, the system must write to the appropriate bank address (BA) and sector address (SA). Table on page 15 shows the address range and bank number associated with each sector. The system must write the reset command to return to the read mode (or erase-suspend-read mode if the bank was previously in Erase Suspend). 10.4 Enter Secured Silicon Sector/Exit Secured Silicon Sector Command Sequence The Secured Silicon Sector region provides a secured data area containing a random, sixteen-byte electronic serial number (ESN). The system can access the Secured Silicon Sector region by issuing the three-cycle Enter Secured Silicon Sector command sequence. The device continues to access the Secured Silicon Sector region until the system issues the four-cycle Exit Secured Document Number: 002-01184 Rev. *B Page 26 of 55 S29JL064H Silicon Sector command sequence. The Exit Secured Silicon Sector command sequence returns the device to normal operation. The Secured Silicon Sector is not accessible when the device is executing an Embedded Program or embedded Erase algorithm. Table on page 30 shows the address and data requirements for both command sequences. See also Secured Silicon Sector Flash Memory Region on page 21 for further information. Note that the ACC function and unlock bypass modes are not available when the Secured Silicon Sector is enabled. 10.5 Byte/Word Program Command Sequence ig n The system may program the device by word or byte, depending on the state of the BYTE# pin. Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically provides internally generated program pulses and verifies the programmed cell margin. Table on page 30 shows the address and data requirements for the byte program command sequence. es When the Embedded Program algorithm is complete, that bank then returns to the read mode and addresses are no longer latched. The system can determine the status of the program operation by using DQ7, DQ6, or RY/BY#. Refer to Write Operation Status on page 31 for information on these status bits. rN ew D Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the program operation. The program command sequence should be reinitiated once that bank has returned to the read mode, to ensure data integrity. Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when a program operation is in progress. 10.5.1 de d fo Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from 0 back to a 1. Attempting to do so may cause that bank to set DQ5 = 1, or cause the DQ7 and DQ6 status bits to indicate the operation was successful. However, a succeeding read will show that the data is still 0. Only erase operations can convert a 0 to a 1. Unlock Bypass Command Sequence ec om m en The unlock bypass feature allows the system to program bytes or words to a bank faster than using the standard program command sequence. The unlock bypass command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. That bank then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is required to program in this mode. The first cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the program address and data. Additional data is programmed in the same manner. This mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total programming time. Table on page 30 shows the requirements for the command sequence. ot R During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command sequence. (See Table on page 30). N The device offers accelerated program operations through the WP#/ACC pin. When the system asserts VHH on the WP#/ACC pin, the device automatically enters the Unlock Bypass mode. The system may then write the two-cycle Unlock Bypass program command sequence. The device uses the higher voltage on the WP#/ACC pin to accelerate the operation. Note that the WP#/ACC pin must not be at VHH for any operation other than accelerated programming, or device damage may result. In addition, the WP#/ ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result. Figure 10.1 on page 28 illustrates the algorithm for the program operation. Refer to Erase and Program Operations on page 44 for parameters, and Figure 17.5 on page 45 for timing diagrams. Document Number: 002-01184 Rev. *B Page 27 of 55 S29JL064H Figure 10.1 Program Operation START Write Program Command Sequence Data Poll from System No D Verify Data? es ig n Embedded Program algorithm in progress rN ew Yes No Last Address? om m en de d fo Increment Address Yes Programming Completed Note 1. See Table on page 30 for program command sequence. Chip Erase Command Sequence ec 10.6 N ot R Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. Table on page 30 shows the address and data requirements for the chip erase command sequence. When the Embedded Erase algorithm is complete, that bank returns to the read mode and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. Refer to Write Operation Status on page 31 for information on these status bits. Any commands written during the chip erase operation are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the chip erase command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when an erase operation is in progress. Figure 10.2 on page 29 illustrates the algorithm for the erase operation. Refer to Erase and Program Operations on page 44 for parameters, and Figure 17.7 on page 46 for timing diagrams. Document Number: 002-01184 Rev. *B Page 28 of 55 S29JL064H 10.7 Sector Erase Command Sequence Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and the sector erase command. Table on page 30 shows the address and data requirements for the sector erase command sequence. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire sector for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. es ig n After the command sequence is written, a sector erase time-out of 80 µs occurs. During the time-out period, additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles must be less than 80 µs, otherwise erasure may begin. Any sector erase address and command following the exceeded time-out may or may not be accepted. It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is written. Any command other than Sector Erase or Erase Suspend during the time-out period resets that bank to the read mode. The system must rewrite the command sequence and any additional addresses and commands. D The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section on DQ3: Sector Erase Timer.). The time-out begins from the rising edge of the final WE# or CE# pulse (first rising edge) in the command sequence. rN ew When the Embedded Erase algorithm is complete, the bank returns to reading array data and addresses are no longer latched. Note that while the Embedded Erase operation is in progress, the system can read data from the non-erasing bank. The system can determine the status of the erase operation by reading DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. Refer to Write Operation Status on page 31 for information on these status bits. de d fo Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the sector erase command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when an erase operation is in progress. om m en Figure 10.2 on page 29 illustrates the algorithm for the erase operation. Refer to Erase and Program Operations on page 44 for parameters, and Figure 17.7 on page 46 for timing diagrams. Figure 10.2 Erase Operation R ec START N ot Write Erase Command Sequence (Notes 1, 2) Data Poll to Erasing Bank from System No Embedded Erase algorithm in progress Data = FFh? Yes Erasure Completed Notes 1. See Table on page 30 for erase command sequence. 2. See the section on DQ3 for information on the sector erase timer. Document Number: 002-01184 Rev. *B Page 29 of 55 S29JL064H 10.8 Erase Suspend/Erase Resume Commands The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. The bank address is required when writing this command. This command is valid only during the sector erase operation, including the 80 µs time-out period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. The bank address must contain one of the sectors currently selected for erase. When the Erase Suspend command is written during the sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. ig n After the erase operation has been suspended, the bank enters the erase-suspend-read mode. The system can read data from or program data to any sector not selected for erasure. (The device erase suspends all sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. Refer to Write Operation Status on page 31 for information on these status bits. D es After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read mode. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard Byte Program operation. Refer to Write Operation Status on page 31 for more information. rN ew In the erase-suspend-read mode, the system can also issue the autoselect command sequence. The device allows reading autoselect codes even at addresses within erasing sectors, since the codes are not stored in the memory array. When the device exits the autoselect mode, the device reverts to the Erase Suspend mode, and is ready for another valid operation. Refer to Autoselect Mode on page 16 and Autoselect Command Sequence on page 26 for details. de d fo To resume the sector erase operation, the system must write the Erase Resume command. The bank address of the erasesuspended bank is required when writing this command. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the chip has resumed erasing. Command Sequence (Note 1) om m en Cycles S29JL064H Command Definitions First Addr Data RD 1 RA Reset (Note 7) 1 XXX 4 Byte 6 Byte Word Secured Silicon Sector Factory Protect (Note 10) Byte Sector/Sector Block Protect Verify (Note 11) Word Enter Secured Silicon Sector Region Word Exit Secured Silicon Sector Region Word 555 XXX 00 A0 PA PD AAA 2AA 555 55 555 20 AAA Unlock Bypass Program (Note 12) 2 XXX A0 PA PD Unlock Bypass Reset (Note 13) 2 XXX 90 XXX 00 Document Number: 002-01184 Rev. *B 90 555 55 AA 00/01 555 555 AAA (SA)X02 (SA)X04 AAA 2AA 555 3 Byte 01 (BA)X1E 88 55 AA (BA)X0F 02 555 555 555 (BA)X0E (BA)X1C AAA 2AA AAA Word Unlock Bypass Data 81/01 90 55 AA 4 Addr (BA)X03 (BA)555 555 555 Byte Sixth Data (BA)X06 (BA)AAA 2AA AAA Word Program Addr 7E 90 55 AA (BA)X01 (BA)X02 (BA)555 555 555 4 01 (BA)AAA 2AA AA AAA Byte (BA)X00 90 55 555 555 3 90 (BA)AAA 2AA AAA Byte Data (BA)555 55 AA 4 Fifth Addr (BA)555 555 AAA Byte Fourth Data (BA)AAA 2AA AA AAA 4 Addr 55 555 555 ot Word Device ID (Note 9) Data 2AA AA AAA N Autoselect (Note 8) 555 R Manufacturer ID Addr Bus Cycles (Notes 2–5) Third F0 ec Read (Note 6) Word Second Page 30 of 55 S29JL064H Cycles S29JL064H Command Definitions Command Sequence (Note 1) Word Bus Cycles (Notes 2–5) First Addr Second Data 555 Chip Erase AA AAA Word AA AAA 1 BA B0 Erase Resume (Note 15) 1 BA 30 Word Addr Sixth Data 2AA 555 Addr Data 555 55 555 10 AAA 2AA 80 AAA Addr AA AAA 555 55 Fifth Data 555 80 AAA 555 Erase Suspend (Note 14) Fourth Data 555 55 2AA 6 Byte Addr 555 555 Sector Erase Data 2AA 6 Byte Addr Third AA AAA 55 SA 30 555 55 CFI Query (Note 15) 1 98 AA ig n Byte rN ew D es Legend X = Don’t care RA = Address of the memory location to be read. RD = Data read from location RA during read operation. PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later. PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first. SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A21–A12 uniquely select any sector. Refer to Table on page 15 for information on sector addresses. BA = Address of the bank that is being switched to autoselect mode, is in bypass mode, or is being erased. A21–A19 uniquely select a bank. fo Notes 1. See Table on page 9 for description of bus operations. 2. All values are in hexadecimal. d 3. Except for the read cycle and the fourth, fifth, and sixth cycle of the autoselect command sequence, all bus cycles are write cycles. de 4. Data bits DQ15–DQ8 are don’t care in command sequences, except for RD and PD. 5. Unless otherwise noted, address bits A21–A11 are don’t cares for unlock and command cycles, unless SA or PA is required. om m en 6. No unlock or command cycles required when bank is reading array data. 7. The Reset command is required to return to the read mode (or to the erase-suspend-read mode if previously in Erase Suspend) when a bank is in the autoselect mode, or if DQ5 goes high (while the bank is providing status information). 8. The fourth cycle of the autoselect command sequence is a read cycle. The system must provide the bank address to obtain the manufacturer ID, device ID, or Secured Silicon Sector factory protect information. Data bits DQ15–DQ8 are don’t care. While reading the autoselect addresses, the bank address must be the same until a reset command is given. See Autoselect Command Sequence on page 26 for more information. ec 9. The device ID must be read across the fourth, fifth, and sixth cycles. R 10. The data is 81h for factory locked, 41h for customer locked, and 01h for not factory/customer locked. 11. The data is 00h for an unprotected sector/sector block and 01h for a protected sector/sector block. ot 12. The Unlock Bypass command is required prior to the Unlock Bypass Program command. N 13. The Unlock Bypass Reset command is required to return to the read mode when the bank is in the unlock bypass mode. 14. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is valid only during a sector erase operation, and requires the bank address. 15. The Erase Resume command is valid only during the Erase Suspend mode, and requires the bank address. Command is valid when device is ready to read array data or when device is in autoselect mode. 11. Write Operation Status The device provides several bits to determine the status of a program or erase operation: DQ2, DQ3, DQ5, DQ6, and DQ7. Table on page 36 and the following subsections describe the function of these bits. DQ7 and DQ6 each offer a method for determining whether a program or erase operation is complete or in progress. The device also provides a hardware-based output signal, RY/ BY#, to determine whether an Embedded Program or Erase operation is in progress or has been completed. Document Number: 002-01184 Rev. *B Page 31 of 55 S29JL064H 11.1 DQ7: Data# Polling The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm is in progress or completed, or whether a bank is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the command sequence. During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then that bank returns to the read mode. During the Embedded Erase algorithm, Data# Polling produces a 0 on DQ7. When the Embedded Erase algorithm is complete, or if the bank enters the Erase Suspend mode, Data# Polling produces a 1 on DQ7. The system must provide an address within any of the sectors selected for erasure to read valid status information on DQ7. D es ig n After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 µs, then the bank returns to the read mode. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected sector, the status may not be valid. fo rN ew When the system detects DQ7 has changed from the complement to true data, it can read valid data at DQ15–DQ0 (or DQ7–DQ0 for x8-only device) on the following read cycles. Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously with DQ15–DQ8 (DQ7–DQ0 for x8-only device) while Output Enable (OE#) is asserted low. That is, the device may change from providing status information to valid data on DQ7. Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has completed the program or erase operation and DQ7 has valid data, the data outputs on DQ15–DQ0 may be still invalid. Valid data on DQ15–DQ0 (or DQ7–DQ0 for x8-only device) will appear on successive read cycles. N ot R ec om m en de d Table on page 36 shows the outputs for Data# Polling on DQ7. Figure 11.1 on page 33 shows the Data# Polling algorithm. Figure 17.9 on page 47 shows the Data# Polling timing diagram. Document Number: 002-01184 Rev. *B Page 32 of 55 S29JL064H Figure 11.1 Data# Polling Algorithm START Read DQ7–DQ0 Addr = VA Yes DQ7 = Data? es DQ5 = 1? D No ig n No ew Yes d fo rN Read DQ7–DQ0 Addr = VA Yes om m en de DQ7 = Data? No FAIL PASS ec Notes 1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being erased. During chip erase, a valid address is any non-protected sector address. RY/BY#: Ready/Busy# N 11.2 ot R 2. DQ7 should be rechecked even if DQ5 = 1 because DQ7 may change simultaneously with DQ5. The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a pull-up resistor to VCC. If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is high (Ready), the device is in the read mode, the standby mode, or one of the banks is in the erase-suspend-read mode. Table on page 36 shows the outputs for RY/BY#. Document Number: 002-01184 Rev. *B Page 33 of 55 S29JL064H 11.3 DQ6: Toggle Bit I Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause DQ6 to toggle. The system may use either OE# or CE# to control the read cycles. When the operation is complete, DQ6 stops toggling. After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 100 µs, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. es ig n The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase-suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erasesuspended. Alternatively, the system can use DQ7 (see DQ7: Data# Polling on page 32).If a program address falls within a protected sector, DQ6 toggles for approximately 1 µs after the program command sequence is written, then returns to reading array data. D DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete. ew Figure 11.2 Toggle Bit Algorithm fo de d Read Byte (DQ7–DQ0) Address =VA rN START om m en Read Byte (DQ7–DQ0) Address =VA No Yes No DQ5 = 1? N ot R ec Toggle Bit = Toggle? Yes Read Byte Twice (DQ7–DQ0) Address = VA Toggle Bit = Toggle? No Yes Program/Erase Operation Not Complete, Write Reset Command Program/Erase Operation Complete Note The system should recheck the toggle bit even if DQ5 = 1 because the toggle bit may stop toggling as DQ5 changes to 1. See the subsections on DQ6 and DQ2 for more information. Document Number: 002-01184 Rev. *B Page 34 of 55 S29JL064H 11.4 DQ2: Toggle Bit II The Toggle Bit II on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is erasesuspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table on page 36 to compare outputs for DQ2 and DQ6. Reading Toggle Bits DQ6/DQ2 es 11.5 ig n Figure 11.2 on page 34 shows the toggle bit algorithm in flowchart form, and DQ2: Toggle Bit II on page 35 explains the algorithm. See also DQ6: Toggle Bit I on page 34. Figure 17.10 on page 47 shows the toggle bit timing diagram. Figure 17.11 on page 48 shows the differences between DQ2 and DQ6 in graphical form. rN ew D Refer to Figure 11.2 on page 34 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ15–DQ0 (or DQ7–DQ0 for x8-only device) at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on DQ15–DQ0 (or DQ7–DQ0 for x8-only device) on the following read cycle. de d fo However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not completed the operation successfully, and the system must write the reset command to return to reading array data. DQ5: Exceeded Timing Limits ec 11.6 om m en The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 11.2 on page 34). R DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a 1, indicating that the program or erase cycle was not successfully completed. N ot The device may output a 1 on DQ5 if the system tries to program a 1 to a location that was previously programmed to 0. Only an erase operation can change a 0 back to a 1. Under this condition, the device halts the operation, and when the timing limit has been exceeded, DQ5 produces a 1. Under both these conditions, the system must write the reset command to return to the read mode (or to the erase-suspend-read mode if a bank was previously in the erase-suspend-program mode). 11.7 DQ3: Sector Erase Timer After writing a sector erase command sequence, the system may read DQ3 to determine whether or not erasure has begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase command. When the time-out period is complete, DQ3 switches from a 0 to a 1. If the time between additional sector erase commands from the system can be assumed to be less than 50 µs, the system need not monitor DQ3. See also Sector Erase Command Sequence on page 29. After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure that the device has accepted the command sequence, and then read DQ3. If DQ3 is 1, the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored until the erase operation is complete. If DQ3 is 0, the device will accept additional sector erase commands. To ensure the command has been accepted, the system software should check the status of Document Number: 002-01184 Rev. *B Page 35 of 55 S29JL064H DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last command might not have been accepted. Table on page 36 shows the status of DQ3 relative to the other status bits Write Operation Status Status Standard Mode Erase Suspend Mode Embedded Program Algorithm DQ7 (Note 2) DQ6 DQ5 (Note 1) DQ3 DQ2 (Note 2) RY/BY# DQ7# Toggle 0 N/A No toggle 0 0 Toggle 0 1 Toggle 0 1 No toggle 0 N/A Toggle 1 Data Data Data Data Data 1 DQ7# Toggle 0 N/A N/A 0 Embedded Erase Algorithm Erase Suspended Sector Erase-Suspend-Read Non-Erase Suspended Sector ig n Erase-Suspend-Program es Notes 1. DQ5 switches to 1 when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. Refer to the section on DQ5 for more information. D 2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details. rN ew 3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm is in progress. The device outputs array data if the system addresses a non-busy bank. fo 12. Absolute Maximum Ratings Storage Temperature, Plastic Packages de Voltage with Respect to Ground –0.5 V to +4.0 V om m en VCC (Note 1) A9, OE#, and RESET# (Note 2) WP#/ACC All other pins (Note 1) Output Short Circuit Current (Note 3) –65°C to +150°C –65°C to +125°C d Ambient Temperature with Power Applied –0.5 V to +12.5 V –0.5 V to +10.5 V –0.5 V to VCC +0.5 V 200 mA R ec Notes 1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, input or I/O pins may overshoot VSS to –2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCC +0.5 V. See Figure 12.1 on page 36. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 12.2 on page 37. N ot 2. Minimum DC input voltage on pins A9, OE#, RESET#, and WP#/ACC is –0.5 V. During voltage transitions, A9, OE#, WP#/ACC, and RESET# may overshoot VSS to – 2.0 V for periods of up to 20 ns. See Figure 12.1 on page 36. Maximum DC input voltage on pin A9 is +12.5 V which may overshoot to +14.0 V for periods up to 20 ns. Maximum DC input voltage on WP#/ACC is +9.5 V which may overshoot to +12.0 V for periods up to 20 ns. 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. 4. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. Figure 12.1 Maximum Negative Overshoot Waveform 20 ns 20 ns +0.8 V –0.5 V –2.0 V 20 ns Document Number: 002-01184 Rev. *B Page 36 of 55 S29JL064H Figure 12.2 Maximum Positive Overshoot Waveform 20 ns VCC +2.0 V VCC +0.5 V 2.0 V 20 ns 20 ns 13. Operating Ranges Industrial (I) Devices –40°C to +85°C ig n Ambient Temperature (TA) VCC Supply Voltages 2.7 V to 3.6 V es VCC for standard voltage range ew D Operating ranges define those limits between which the functionality of the device is guaranteed. fo Parameter Description d Parameter Symbol CMOS Compatible Test Conditions Min de 14.1 rN 14. DC Characteristics VIN = VSS to VCC, VCC = VCC max Input Load Current ILIT A9, OE# and RESET# Input Load Current VCC = VCC max, OE# = VIH; A9 or OE# or RESET# = 12.5 V ILO Output Leakage Current VOUT = VSS to VCC, VCC = VCC max, OE# = VIH ILR Reset Leakage Current R ec om m en ILI VCC = VCC max; RESET# = 12.5 V Max Unit 1.0 µA 35 µA 1.0 µA 35 µA CE# = VIL, OE# = VIH, Byte Mode 5 MHz 10 16 1 MHz 2 4 CE# = VIL, OE# = VIH, Word Mode 5 MHz 10 16 mA VCC Active Read Current (Notes 1, 2) ot ICC1 Typ 4 VCC Active Write Current (Notes 2, 3) CE# = VIL, OE# = VIH, WE# = VIL 15 30 mA ICC3 VCC Standby Current (Note 2) CE#, RESET# = VCC 0.3 V 0.2 5 µA ICC4 VCC Reset Current (Note 2) RESET# = VSS 0.3 V 0.2 5 µA ICC5 Automatic Sleep Mode (Notes 2, 4) VIH = VCC 0.3 V; VIL = VSS 0.3 V 0.2 5 µA Byte 21 45 ICC6 VCC Active Read-While-Program Current (Notes 1, 2) CE# = VIL, OE# = VIH Word 21 45 Byte 21 45 ICC7 VCC Active Read-While-Erase Current (Notes 1, 2) CE# = VIL, OE# = VIH Word 21 45 ICC8 VCC Active Program-While-Erase-Suspended Current (Notes 2, 5) CE# = VIL, OE# = VIH 17 35 mA N 2 ICC2 1 MHz mA mA VIL Input Low Voltage –0.5 0.8 V VIH Input High Voltage 0.7 x VCC VCC + 0.3 V VHH Voltage for WP#/ACC Sector Protect/Unprotect and Program Acceleration 8.5 9.5 V Document Number: 002-01184 Rev. *B VCC = 3.0 V ± 10% Page 37 of 55 S29JL064H Parameter Symbol Parameter Description Test Conditions VID Voltage for Autoselect and Temporary Sector Unprotect VCC = 3.0 V 10% VOL Output Low Voltage IOL = 2.0 mA, VCC = VCC min VOH1 Output High Voltage VOH2 Min 11.5 IOH = –2.0 mA, VCC = VCC min 0.85 VCC IOH = –100 µA, VCC = VCC min VCC–0.4 Low VCC Lock-Out Voltage (Note 5) VLKO Typ 1.8 Max Unit 12.5 V 0.45 V V 2.0 2.3 V Notes 1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. 2. Maximum ICC specifications are tested with VCC = VCCmax. 3. ICC active while Embedded Erase or Embedded Program is in progress. 4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is 200 nA. es Zero-Power Flash D 14.2 ig n 5. Not 100% tested. ew Figure 14.1 ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents) rN de d fo 20 15 om m en Supply Current in mA 25 10 ec 5 500 1000 1500 2000 2500 3000 3500 4000 Time in ns N ot 0 R 0 Note Addresses are switching at 1 MHz Document Number: 002-01184 Rev. *B Page 38 of 55 S29JL064H Figure 14.2 Typical ICC1 vs. Frequency 12 3.6 V 10 2.7 V es ig n 6 D 4 ew Supply Current in mA 8 fo rN 2 2 de 1 d 0 3 4 5 Frequency in MHz om m en Note T = 25 °C Figure 15.1 Test Setup R ec 15. Test Conditions N ot 3.3 V 2.7 k Device Under Test CL 6.2 k Note Diodes are IN3064 or equivalent Document Number: 002-01184 Rev. *B Page 39 of 55 S29JL064H Test Specifications Test Condition 55, 60 70, 90 Output Load Unit 1 TTL gate Output Load Capacitance, CL (including jig capacitance) 30 100 Input Rise and Fall Times Input Pulse Levels pF 5 ns 0.0–3.0 V 1.5 V Output timing measurement reference levels 1.5 V 16. Key To Switching Waveforms Inputs Outputs es Waveform ig n Input timing measurement reference levels ew D Steady rN Changing from H to L fo Changing from L to H de om m en Does Not Apply Changing, State Unknown d Don’t Care, Any Change Permitted Center Line is High Impedance State (High Z) Figure 16.1 Input Waveforms and Measurement Levels 3.0 V 1.5 V Input Measurement Level 1.5 V Output N ot R ec 0.0 V Document Number: 002-01184 Rev. *B Page 40 of 55 S29JL064H 17. AC Characteristics Read-Only Operations Parameter JEDEC Std. tAVAV tRC tAVQV Speed Options Description Test Setup Read Cycle Time (Note 1) tACC Address to Output Delay CE#, OE# = VIL OE# = VIL 55 60 70 90 Unit Min 55 60 70 90 ns Max 55 60 70 90 ns Max 55 tELQV tCE Chip Enable to Output Delay tGLQV tOE Output Enable to Output Delay Max tEHQZ tDF Chip Enable to Output High Z (Notes 1, 3) Max 16 tGHQZ tDF Output Enable to Output High Z (Notes 1, 3) Max 16 tOH Output Hold Time From Addresses, CE# or OE#, Whichever Occurs First Min 0 tOEH Output Enable Hold Time (Note 1) Min ns ns ns ns ns es Min Toggle and Data# Polling 90 35 ns 10 ns 0 D Read 70 30 5 ew tAXQX 60 25 ig n 17.1 rN Notes 1. Not 100% tested. 2. See Figure 15.1 on page 39 and Table on page 40 for test specifications fo 3. Measurements performed by placing a 50 ohm termination on the data pin with a bias of VCC/2. The time from OE# high to the data bus driven to VCC/2 is taken as tDF. om m en de d Figure 17.1 Read Operation Timings Addresses CE# tRC Addresses Stable tACC ec tRH N WE# tRH tDF tOE tOEH ot R OE# tCE tOH HIGH Z HIGH Z Output Valid Outputs RESET# RY/BY# 0V Document Number: 002-01184 Rev. *B Page 41 of 55 S29JL064H 17.2 Hardware Reset (RESET#) Parameter JEDEC Std Description All Speed Options Unit Max 20 µs RESET# Pin Low (NOT During Embedded Algorithms) to Read Mode (See Note) Max 500 ns ns tReady RESET# Pin Low (During Embedded Algorithms) to Read Mode (See Note) tReady tRP RESET# Pulse Width Min 500 tRH Reset High Time Before Read (See Note) Min 50 ns tRPD RESET# Low to Standby Mode Min 20 µs tRB RY/BY# Recovery Time Min 0 ns ig n Note Not 100% tested. D es Figure 17.2 Reset Timings CE#, OE# RESET# om m en tRP de d fo tRH rN ew RY/BY# tReady Reset Timings NOT during Embedded Algorithms ec Reset Timings during Embedded Algorithms R RY/BY# tReady N ot tRB CE#, OE# RESET# tRP Document Number: 002-01184 Rev. *B Page 42 of 55 S29JL064H 17.3 Word/Byte Configuration (BYTE#) Parameter JEDEC Speed Options Std. Description tELFL/tELFH 55 60 70 90 Unit CE# to BYTE# Switching Low or High Max 5 ns tFLQZ BYTE# Switching Low to Output HIGH Z Max 16 ns tFHQV BYTE# Switching High to Output Active Max 55 60 70 90 ns Figure 17.3 BYTE# Timings for Read Operations ig n CE# D es OE# tELFL Data Output (DQ7–DQ0) Data Output (DQ14–DQ0) fo DQ14–DQ0 rN BYTE# Switching from word to byte ew BYTE# de d DQ15/A-1 DQ15 Output Address Input tFLQZ om m en tELFH BYTE# BYTE# Switching from byte to word mode ec DQ14–DQ0 Data Address Input R DQ15/A-1 Data Output (DQ14–DQ0) DQ15 Output N ot tFHQV Figure 17.4 BYTE# Timings for Write Operations CE# The falling edge of the last WE# signal WE# BYTE# tSET (tAS) tHOLD (tAH) Note Refer to the Erase/Program Operations table for tAS and tAH specifications. Document Number: 002-01184 Rev. *B Page 43 of 55 S29JL064H 17.4 Erase and Program Operations Parameter Speed Options JEDEC Std tAVAV tWC Write Cycle Time (Note 1) Min tAVWL tAS Address Setup Time Min 0 ns tASO Address Setup Time to OE# low during toggle bit polling Min 15 ns tAH Address Hold Time Min tAHT Address Hold Time From CE# or OE# high during toggle bit polling Min tDVWH tDS Data Setup Time Min tWHDX tDH Data Hold Time Min 0 ns tOEPH Output Enable High during toggle bit polling Min 20 ns tGHWL tGHWL Read Recovery Time Before Write (OE# High to WE# Low) Min tELWL tCS CE# Setup Time Min tWHEH tCH CE# Hold Time Min tWLWH tWP Write Pulse Width Min tWPH Write Pulse Width High tSR/W Latency Between Read and Write Operations Programming Operation (Note 2) tWHWH1 tWHWH1 Accelerated Programming Operation, Word or Byte (Note 2) tWHWH2 tWHWH2 Sector Erase Operation (Note 2) 60 70 90 Unit 60 70 90 ns 30 35 40 45 0 35 ns 40 45 ig n 30 es 0 D 0 25 25 25 0 ns ns ns 0 25 ns ns 30 35 30 30 ns ns ns rN tWHWH1 Byte Typ 5 Word Typ 7 Typ 4 µs Typ 0.4 sec fo tWHWH1 55 55 ew Min Min d tWHDL de tWLAX Description µs VCC Setup Time (Note 1) Min 50 µs tRB Write Recovery Time from RY/BY# Min 0 ns Program/Erase Valid to RY/BY# Delay Max 90 ns tBUSY Notes 1. Not 100% tested. om m en tVCS N ot R ec 2. See Erase and Programming Performance on page 51 for more information. Document Number: 002-01184 Rev. *B Page 44 of 55 S29JL064H Figure 17.5 Program Operation Timings Program Command Sequence (last two cycles) tAS tWC Addresses Read Status Data (last two cycles) 555h PA PA PA tAH CE# tCH OE# tWHWH1 ig n tWP WE# tDH PD A0h Status ew Data D tDS es tWPH tCS tBUSY DOUT rN tRB fo RY/BY# d VCC de tVCS om m en Notes 1. PA = program address, PD = program data, DOUT is the true data at the program address. 2. Illustration shows device in word mode. Figure 17.6 Accelerated Program Timing Diagram R ec VHH VIL or VIH ot WP#/ACC tVHH N tVHH VIL or VIH Document Number: 002-01184 Rev. *B Page 45 of 55 S29JL064H Figure 17.7 Chip/Sector Erase Operation Timings Erase Command Sequence (last two cycles) tAS tWC 2AAh Addresses Read Status Data VA SA VA 555h for chip erase tAH CE# tCH OE# tWP WE# tWPH tCS tWHWH2 ig n tDS tDH 55h In Progress 30h es Data tBUSY Complete tRB ew RY/BY# D 10 for Chip Erase rN tVCS VCC fo Notes 1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Write Operation Status on page 31. de d 2. These waveforms are for the word mode. om m en Figure 17.8 Back-to-back Read/Write Cycle Timings tWC Valid RA Valid PA Addresses tCPH tCP tOE ot N Valid PA Valid PA tCE R CE# tWC tACC ec tAH OE# tWC tRC tOEH tGHWL tWP WE# tWPH tDF tDS tOH tDH Data Valid Out Valid In Valid In Valid In tSR/W WE# Controlled Write Cycle Document Number: 002-01184 Rev. *B Read Cycle CE# or CE2# Controlled Write Cycles Page 46 of 55 S29JL064H Figure 17.9 Data# Polling Timings (During Embedded Algorithms) tRC Addresses VA VA VA tACC tCE CE# tCH tOE OE# tOEH tDF WE# tOH High Z Complement Complement Status Data Status Data Valid Data True ig n DQ7 High Z Valid Data True es DQ0–DQ6 tBUSY D RY/BY# rN ew Note VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle Figure 17.10 Toggle Bit Timings (During Embedded Algorithms) fo tAHT tAS de d Addresses tAHT om m en tASO CE# tCEPH tOEH WE# ec tOEPH Valid Data Valid Status Valid Status (first read) (second read) (stops toggling) N DQ6/DQ2 tOE Valid Status ot tDH R OE# Valid Data RY/BY# Note VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle. Document Number: 002-01184 Rev. *B Page 47 of 55 S29JL064H Figure 17.11 DQ2 vs. DQ6 Enter Embedded Erasing Erase Suspend Erase Resume Erase Suspend Program Erase Suspend Read Erase WE# Enter Erase Suspend Program Erase Suspend Read Erase Complete Erase DQ6 DQ2 es Temporary Sector Unprotect D 17.5 ig n Note DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle DQ2 and DQ6. Parameter Std Description VID Rise and Fall Time (See Note) Min tVHH VHH Rise and Fall Time (See Note) Min tRSP RESET# Setup Time for Temporary Sector Unprotect tRRB RESET# Hold Time from RY/BY# High for Temporary Sector Unprotect Unit 500 ns rN tVIDR All Speed Options ew JEDEC fo Min ns 4 µs 4 µs d Min 250 om m en de Note Not 100% tested. Figure 17.12 Temporary Sector Unprotect Timing Diagram RESET# VSS, VIL, or VIH VID VSS, VIL, or VIH ec VID R tVIDR ot N CE# tVIDR Program or Erase Command Sequence WE# tRSP tRRB RY/BY# Document Number: 002-01184 Rev. *B Page 48 of 55 S29JL064H Figure 17.13 Sector/Sector Block Protect and Unprotect Timing Diagram VID VIH RESET# SA, A6, A1, A0 Valid* Valid* Sector Group Protect/Unprotect Data 60h Valid* Verify 60h 40h ig n 1 µs Sector Group Protect: 150 µs Sector Group Unprotect: 15 ms es CE# Status ew D WE# rN OE# d fo Note * For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0. Alternate CE# Controlled Erase and Program Operations de 17.6 om m en Parameter Std. Description tAVAV tWC Write Cycle Time (Note 1) Min tAVWL tAS Address Setup Time Min tELAX tAH Address Hold Time tDVEH tDS tEHDX tDH tGHEL tGHEL Speed Options 55 60 70 90 Unit 55 55 70 90 ns Min 30 35 40 45 ns Data Setup Time Min 30 35 40 45 ns Data Hold Time Min 0 ns Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns WE# Setup Time Min 0 ns WE# Hold Time Min 0 Min 25 25 Min 25 25 ot R ec JEDEC tWS tWH tELEH tCP CE# Pulse Width tEHEL tCPH CE# Pulse Width High N tWLEL tEHWH 0 ns ns 40 45 30 Byte Typ 5 Word Typ 7 ns ns tWHWH1 tWHWH1 Programming Operation (Note 2) tWHWH1 tWHWH1 Accelerated Programming Operation, Word or Byte (Note 2) Typ 4 µs tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.4 sec µs Note 1. Not 100% tested. 2. See Erase and Programming Performance on page 51 for more information. Document Number: 002-01184 Rev. *B Page 49 of 55 S29JL064H Figure 17.14 Alternate CE# Controlled Write (Erase/Program) Operation Timings PA for program SA for sector erase 555 for chip erase 555 for program 2AA for erase Data# Polling Addresses PA tWC tAS tAH tWH WE# tGHEL OE# tWS tCPH es CE# ig n tWHWH1 or 2 tCP tBUSY D tDS ew tDH DQ7# Data PD for program 30 for sector erase 10 for chip erase fo A0 for program 55 for erase rN tRH DOUT de d RESET# om m en RY/BY# Notes 1. Figure indicates last two bus cycles of a program or erase operation. 2. PA = program address, SA = sector address, PD = program data. 3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device. N ot R ec 4. Waveforms are for the word mode. Document Number: 002-01184 Rev. *B Page 50 of 55 S29JL064H 18. Erase and Programming Performance Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time Parameter 0.4 5 sec Chip Erase Time 56 Excludes 00h programming prior to erasure (Note 4) Byte Program Time 5 sec 150 µs Word Program Time 7 210 µs Accelerated Byte/Word Program Time 4 120 µs Byte Mode 42 126 Word Mode 28 84 10 30 Chip Program Time (Note 3) Excludes system level overhead (Note 5) sec Accelerated Chip Programming Time sec ig n Notes 1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 100,000 cycles; checkerboard data pattern. 2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles. es 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. D 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. ew 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table on page 30 for further information on command definitions. fo rN 6. The device has a minimum cycling endurance of 100,000 cycles per sector. CIN Input Capacitance COUT Output Capacitance ec Control Pin Capacitance Notes 1. Sampled, not 100% tested. Max 6 7.5 VIN = 0 VOUT = 0 VIN = 0 Unit pF Fine-pitch BGA 4.2 5.0 pF pF TSOP 8.5 12 Fine-pitch BGA 5.4 6.5 pF TSOP 7.5 9 pF Fine-pitch BGA 3.9 4.7 pF N ot 2. Test conditions TA = 25°C, f = 1.0 MHz. Typ TSOP R CIN2 Test Setup de Parameter Description om m en Parameter Symbol d 19. TSOP & BGA Pin Capacitance Document Number: 002-01184 Rev. *B Page 51 of 55 S29JL064H 20. Physical Dimensions FBE063—63-Ball Fine-Pitch Ball Grid Array (BGA) 12 x 11 mm package Dwg rev AF; 10/99 N ot R ec om m en de d fo rN ew D es ig n 20.1 Document Number: 002-01184 Rev. *B Page 52 of 55 S29JL064H TS 048—48-Pin Standard TSOP Dwg rev AA; 10/99 N ot R ec om m en de d fo rN ew D es ig n 20.2 Document Number: 002-01184 Rev. *B Page 53 of 55 S29JL064H 21. Document History Page Document Title:S29JL064H 64 Mbit (8 M x 8-Bit/4 M x 16-Bit), 3 V, Simultaneous Read/Write Flash Document Number: 002-01184 Rev. ECN No. Orig. of Change Submission Date Description of Change 01/22/2004 A:Initial release (Spansion Publication Number: S29JL064H_00) 03/26/2004 A1:Removed Latchup Characteristics section. 04/28/2004 A2:Updated data sheet status from Preliminary to Data sheet - RYSU 06/28/2005 A4:Added statement regarding new FBGA designs to first page. Updated Trademark. Ordering Information Added new FBGA design statement. Reformatted Valid Combinations Table. Sector / Sector Block Protection and Unprotection Reformatted Table 6 to fit on one page. Operating Ranges Removed Extended operating range. DC Characteristics Reformatted CMOS Compatible table columns. AC Characteristics Reformatted Erase and Program Operations table columns. ec om m en de d fo rN ** ew D es ig n 09/16/2004 A3:In-System Sector Protect/Unprotect Algorithms Corrected wait time in fourth step of flowchart. Autoselect Codes Corrected Secured Silicon Indicator Bit data on DQ7 to DQ0. Command Definitions Corrected Secured Silicon Sector Factory Protect data in fourth bus cycle. N ot R 06/06/2007 A5:Removed the 7 inch Tape and Reel Packing Type. 08/10/2007 A6:DC Characteristics Changed VLKO minimum, typical, and maximum values. ** - RYSU 09/19/2007 A7:S29JL064H Autoselect Codes, (High Voltage Method) Table Deleted code for 'customer locked' under column "DQ7 to DQ0" 09/08/2009 A8:In-System Sector Protect/Unprotect Algorithms Updated Figure Secured Silicon Sector Flash Memory Region Modified section Word/Byte Configuration (BYTE#) Changed tFHQV condition from Min. to Max *A 5038958 RYSU *B 5074510 RYSU 12/07/2015 Updated to Cypress template 01/08/2016 Added a note in blue font in page 1 showing the suggested replacement parts. Removed the Spansion Revision History Document Number: 002-01184 Rev. *B Page 54 of 55 S29JL064H Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. Products PSoC® Solutions Automotive..................................cypress.com/go/automotive psoc.cypress.com/solutions Clocks & Buffers ................................ cypress.com/go/clocks PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP Interface......................................... cypress.com/go/interface Cypress Developer Community Lighting & Power Control............ cypress.com/go/powerpsoc Community | Forums | Blogs | Video | Training Memory........................................... cypress.com/go/memory Technical Support PSoC ....................................................cypress.com/go/psoc cypress.com/go/support ig n Touch Sensing .................................... cypress.com/go/touch USB Controllers....................................cypress.com/go/USB N ot R ec om m en de d fo rN ew D es Wireless/RF .................................... cypress.com/go/wireless © Cypress Semiconductor Corporation, 2004-2016. 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Document Number: 002-01184 Rev. *B ® ® ® ® Revised January 08, 2016 Page 55 of 55 Cypress , Spansion , MirrorBit , MirrorBit Eclipse™, ORNAND™, EcoRAM™, HyperBus™, HyperFlash™, and combinations thereof, are trademarks and registered trademarks of Cypress Semiconductor Corp. All products and company names mentioned in this document may be the trademarks of their respective holders.
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