UPA1706 Data Sheet

UPA1706 Data Sheet
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1.
2.
3.
4.
5.
6.
7.
All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights
of Renesas Electronics or others.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of
semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,
and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by
you or third parties arising from the use of these circuits, software, or information.
When exporting the products or technology described in this document, you should comply with the applicable export control
laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas
Electronics products or the technology described in this document for any purpose relating to military applications or use by
the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and
technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited
under any applicable domestic or foreign laws or regulations.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics
does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and
“Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as
indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular
application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior
written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way
liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an
application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written
consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise
expressly specified in a Renesas Electronics data sheets or data books, etc.
“Standard”:
8.
9.
10.
11.
12.
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots.
“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support.
“Specific”:
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or
systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare
intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,
especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation
characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or
damages arising out of the use of Renesas Electronics products beyond such specified ranges.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have
specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further,
Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to
guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a
Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire
control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because
the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system
manufactured by you.
Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental
compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable
laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS
Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with
applicable laws and regulations.
This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas
Electronics.
Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this
document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1706
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
PACKAGE DRAWING (Unit : mm)
This product is N-Channel MOS Field Effect Transistor
designed for DC/DC Converters and power management
8
5
applications of notebook computers.
1,2,3 ; Source
; Gate
4
5,6,7,8 ; Drain
FEATURES
• Super low on-resistance
RDS(on)3 = 8.0 mΩ TYP. (VGS = 4.0 V, ID = 7.0 A)
6.0 ±0.3
4
4.4
0.8
+0.10
–0.05
5.37 MAX.
0.15
1.8 MAX.
RDS(on)2 = 7.0 mΩ TYP. (VGS = 4.5 V, ID = 7.0 A)
1.44
1
RDS(on)1 = 5.8 mΩ TYP. (VGS = 10 V, ID = 7.0 A)
0.05 MIN.
• Low Ciss : Ciss = 3000 pF TYP.
• Built-in G-S protection diode
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1706G
Power SOP8
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected)
Drain to Source Voltage
Note1
VDSS
30
V
VGSS
±20
V
ID(DC)
±13
A
ID(pulse)
±52
A
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to + 150
°C
Gate to Source Voltage
Note2
Drain Current (DC)
Drain Current (pulse)
Note3
Total Power Dissipation (TA = 25 °C)
Note4
Body
Diode
Gate
Gate
Protection
Diode
Source
Notes 1.
2.
3.
4.
VGS = 0 V
VDS = 0 V
PW ≤ 10 µs, Duty cycle ≤ 1 %
2
Mounted on ceramic substrate of 1200 mm x 0.7 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G13083EJ2V0DS00 (2nd edition)
Date Published April 2001 NS CP(K)
Printed in Japan
The mark ★ shows major revised points.
©
1998
µPA1706
ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected)
CHARACTERISTICS
SYMBOL
Drain to Source On-state Resistance
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
RDS(on)1
VGS = 10 V, ID = 7.0 A
5.8
7.8
mΩ
RDS(on)2
VGS = 4.5 V, ID = 7.0 A
7.0
10.0
mΩ
RDS(on)3
VGS = 4.0 V, ID = 7.0 A
8.0
12.0
mΩ
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 7.0 A
10
22
Drain Leakage Current
IDSS
VDS = 30 V, VGS = 0 V
10
µA
Gate to Source Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
µA
Input Capacitance
Ciss
VDS = 10 V
3000
pF
Output Capacitance
Coss
VGS = 0 V
950
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
380
pF
Turn-on Delay Time
td(on)
ID = 7.0 A
40
ns
VGS(on) = 10 V
220
ns
td(off)
VDD = 15 V
140
ns
tf
RG = 10 Ω
90
ns
Total Gate Charge
QG
ID = 13 A
56
nC
Gate to Source Charge
QGS
VDD = 24 V
9
nC
Gate to Drain Charge
QGD
VGS = 10 V
14
nC
VF(S-D)
IF = 13 A, VGS = 0 V
0.8
V
Reverse Recovery Time
trr
IF = 13 A, VGS = 0 V
43
ns
Reverse Recovery Charge
Qrr
di/dt = 100A/µs
50
nC
Gate to Source Cut-off Voltage
Rise Time
tr
Turn-off Delay Time
Fall Time
Body Diode Forward Voltage
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
RL
RG
RG = 10 Ω
PG.
VGS
VGS
Wave Form
0
PG.
VDD
ID
Wave Form
90 %
90 %
τ = 1µ s
Duty Cycle ≤ 1 %
10 %
0 10 %
tr
td(on)
ton
IG = 2 mA
RL
50 Ω
VDD
90 %
ID
τ
2
VGS(on)
10 %
ID
VGS
0
S
td(off)
tf
toff
Data Sheet G13083EJ2V0DS
µPA1706
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
2.8
100
80
60
40
20
0
20
40
60
80
100 120 140 160
Mounted on ceramic
substrate of
1200mm 2 × 0.7mm
2.4
2.0
1.6
1.2
0.8
0.4
0
20
TA - Ambient Temperature - ˚C
★
40
60
80
100 120 140 160
TA - Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
d
ite )
Lim10 V
=
ID(pulse) = 52 A
PW
)
(on
DS GS
10
ID(DC) = 13 A
10
ms
=1
Remark Mounted on ceramic substrate of 1200 mm ×
2
ms
0.7 mm
10
0m
s
Po
we
rD
iss
1
ipa
tio
nL
im
ite
d
0.1
TA = 25˚C
Single Pulse
0.01
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000
rth(t) - Transient Thermal Resistance - ˚C/W
ID - Drain Current - A
R tV
(a
100
Rth(ch-a) = 62.5˚C/W
10
1
0.1
Mounted on ceramic
substrate of 1200mm2 × 0.7mm
Single Pulse
Channel to Ambien
0.01
0.001
100 µ
1m
10 m
100 m
1
10
100
1 000
10 000
PW - Pulse Width - s
Data Sheet G13083EJ2V0DS
3
µPA1706
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
Pulsed
VGS = 10 V 4.5 V
50
ID - Drain Current - A
ID - Drain Current - A
4.0 V
TA = 125˚C
75˚C
25˚C
-25˚C
10
1
0.1
0.01
40
30
20
10
VDS = 10 V
0
1
3
2
4
0
VGS - Gate to Source Voltage - V
TA = −25˚C
25˚C
75˚C
125˚C
10
1
10
1
0.1
100
RDS(on) - Drain to Source On-state Resistance - mΩ
|yfs| - Forward Transfer Admittance - S
VDS =10 V
Pulsed
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
Pulsed
40
30
20
10
ID = 7.0 A
0
2
4
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Pulsed
20
15
10
VGS = 4.0 V
4.5 V
10 V
5
0
1
10
4
6
8
10
12 14 16 18 20
VGS - Gate to Source Voltage - V
100
VGS(off) - Gate to Source Cut-off Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
ID- Drain Current - A
25
0.8
0.6
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1000
0.4
0.2
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
2.6
VDS = 10 V
ID = 1 mA
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0
-40 -20 0
20 40 60 80 100 120 140 160
Tch - Channel Temperature - ˚C
ID - Drain Current - A
Data Sheet G13083EJ2V0DS
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
18
16
VGS = 4.0 V
4.5 V
12
10 V
10
8
6
4
2
0
-40 -20
ID = 7.0 A
0
100
0V
VGS =10 V
10
1
0.1
0
20 40 60 80 100 120 140 160
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
1000
Coss
Crss
100
10
10
100
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Diode - ns
100
10
1.4
td(on)
10
VDD = 15 V
VGS = 10 V
RG = 10 Ω
1
0.1
1
10
100
ID - Drain Current - A
di/dt = 100A/µs
VGS = 0 V
1
1.2
td(off)
tf
100
100
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1
0.1
1.0
0.8
tr
VDS - Drain to Source Voltage - V
1 000
0.6
SWITCHING CHARACTERISTICS
VGS = 0 V
f = 1 MHz
1
0.4
1 000
Ciss
10
0.1
0.2
VSD - Source to Drain Voltage - V
Tch - Channel Temperature - ˚C
10000
Pulsed
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
ID = 13 A
30
VDD = 24 V
15 V
6V
12
10
VGS
20
8
6
4
10
2
VDS
0
ID - Drain Current - A
20
40
60
80
VGS - Gate to Source Voltage - V
14
1000
IF - Diode Forward Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
µPA1706
0
100
QG - Gate Charge - nC
Data Sheet G13083EJ2V0DS
5
µPA1706
[MEMO]
6
Data Sheet G13083EJ2V0DS
µPA1706
[MEMO]
Data Sheet G13083EJ2V0DS
7
µPA1706
• The information in this document is current as of April, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
Was this manual useful for you? yes no
Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Download PDF

advertising