datasheet for KTD1898 by KEC Corp.

datasheet for KTD1898 by KEC Corp.
SEMICONDUCTOR
KTD1898
TECHNICAL DATA
EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES
A
1W (Mounted on Ceramic Substrate).
C
H
Small Flat Package.
G
J
B
E
Complementary to KTB1260.
DIM
A
B
C
D
E
F
G
H
J
K
D
D
K
MAXIMUM RATING (Ta=25
)
CHARACTERISTIC
F
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
80
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
1
A
Emitter Current
IE
-1
A
PC
500
mW
PC*
1
W
Tj
150
Tstg
-55 150
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Mounted on ceramic substrate (250mm
2
1
F
2
3
MILLIMETERS
4.70 MAX
_ 0.20
2.50 +
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
_ 0.10
1.50 +
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
0.8t)
Marking
h FE Rank
Lot No.
Z
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=80V, IE=0
-
-
1
A
Emitter Cut-off Current
IEBO
VEB=4V, IC=0
-
-
1
A
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, IB=0
80
-
-
V
DC Current Gain
hFE(Note)
VCE=3V, IC=500mA
70
-
400
VCE(sat)
IC=500mA, IB=20mA
-
-
0.4
V
VCE=10V, IC=50mA, f=100MHz
-
100
-
MHz
VCB=10V, IE=0, f=1MHz
-
20
-
pF
Collector-Emitter Saturation Voltage
fT
Transition Frequency
Cob
Collector Output Capacitance
Note : hFE Classification
2003. 7. 3
O:70 140,
Y:120
Revision No : 1
240,
GR:200
400
1/3
KTD1898
I C - V CE
Ta=25 C
VCE =5V
100
10
1
0.1
0
5mA
4mA
3mA
0.6
2mA
0.4
1mA
0.2
I B =0mA
0
2
6
8
10
12
COLLECTOR-EMITTER VOLTAGE VCE (V)
h FE - I C
VCE(sat) - I C
Ta=25 C
300
VCE =3V
100
VCE =1V
30
Ta=25 C
2.0
1.0
0.5
0.2
I C /I B=20/1
0.1
0.05
I C /I B =10/1
0.02
0.01
0
10
100
0
1K
10
1K
Ta=25 C
VCE =-5V
200
100
50
20
10
5
2
1
1
2
5
10
20
50 100 200
EMITTER CURRENT I C (mA)
Revision No : 1
500 1K
COLLECTOR OUTPUT CAPACITANCE C ob (pF)
f T - IE
500
100
1000
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
TRANSITION FREQUENCY f T (MHz)
4
BASE-EMITTER VOLTAGE VBE (V)
10
2003. 7. 3
6mA
0.8
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
1K
DC CURRENT GAIN h FE
Ta=25 C
1.0
0
COLLECTOR SATURATION
VOLTAGE VCE(sat) (V)
COLLECTOR CURRENT I C (mA)
1000
COLLECTOR CURRENT I C (mA)
I C - VBE
C ob - VCB
1000
Ta=25 C
f=1MHz
I E =0A
I C =0A
100
10
1
0.1 0.2
0.5
1
2
5
10
20
50 100
COLLECTOR-BASE VOLTAGE VCB (V)
2/3
KTD1898
COLLECTOR CURRENT I C (A)
3
1
COLLECTOR POWER DISSIPATION Pc (W)
SAFE OPERATING AREA
I C (Pulse) MAX. *
I C MAX.
(CONTINUOUS)
Pw
10
0m
=1
300m
DC
S*
0m
s*
OP
ER
AT
100m
IO
N
30m
10m
3m
1m
0.1
* SINGLE NONREPETITVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
Pc - Ta
1.2
1 MOUNTED ON CERAMIC
1
SUBSTRATE
(250mm 2 x0.8t)
2 Ta=25 C
1.0
0.8
0.6
2
0.4
0.2
0
0
20
40
60
80
100
120
140
160
AMBIENT TEMPERATURE Ta ( C)
0.3
1
3
10
30
100
COLLECTOR-EMITTER VOLTAGE VCE (V)
2003. 7. 3
Revision No : 1
3/3
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