LND250 (71323 байта)
LND250
N-Channel Depletion-Mode
MOSFET
Ordering Information
BVDSX /
BVDGX
RDS(ON)
(max)
IDSS
(min)
Order Number / Package
Product marking for SOT-23:
TO-236AB*
NDE❋
500V
1.0KΩ
1.0mA
LND250K1
where ❋ = 2-week alpha date code
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Features
Advanced DMOS Technology
❏ ESD gate protection
The LND2 is a high voltage N-channel depletion mode (normallyon) transistor utilizing Supertex’s lateral DMOS technology. The
gate is ESD protected.
❏ Free from secondary breakdown
❏ Low power drive requirement
The LND2 is ideal for high voltage applications in the areas of
normally-on switches, precision constant current sources, voltage ramp generation and amplification.
❏ Ease of paralleling
❏ Excellent thermal stability
❏ Integral source-drain diode
❏ High input impedance and low CISS
Applications
❏ Solid state relays
Package Options
❏ Normally-on switches
❏ Converters
❏ Power supply circuits
❏ Constant current sources
❏ Input protection circuits
Source
Absolute Maximum Ratings
Drain-to-Source Voltage
BVDSX
Drain-to-Gate Voltage
BVDGX
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
±20V
-55°C to +150°C
300°C
Gate
Drain
TO-236AB
(SOT-23)
top view
Note: See Package Outline section for dimensions.
12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
1 refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products,
LND250
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
@TA = 25°C
°C/W
°C/W
θja
IDR
IDRM*
13mA
30mA
0.36W
200
350
13mA
30mA
TO-236AB
θjc
* ID (continuous) is limited by max rated Tf.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min
BVDSX
Drain-to-Source Breakdown Voltage
500
VGS(OFF)
Gate-to-Source OFF Voltage
-1.0
Typ
Max
Unit
Conditions
V
VGS = -10V, ID = 1.0mA
-3.0
V
VDS = 25V, ID = 100nA
∆VGS(OFF) Change in VGS(OFF) with Temperature
5.0
mV/°C
VDS = 25V, ID = 100nA
IGSS
Gate Body Leakage Current
100
nA
VGS = ±20V, VDS = 0V
ID(OFF)
Drain-to-Source Leakage Current
100
nA
VGS = -10V, VDS = 450V
100
µA
VGS = -10V, VDS = 0.8V max rating
TA =125°C
3.0
mA
VGS = 0V, VDS = 25V
1K
Ω
VGS = 0V, ID = 0.5mA
1.2
%/°C
VGS = 0V, ID = 0.5mA
Ω
VGS = 0V, ID = 1.0mA
IDSS
Saturated Drain-to-Source Current
1.0
RDS(ON)
Static Drain-to-Source ON-State Resistance
850
∆RDS(ON) Change in RDS(ON) with Temperature
GFS
Forward Transconductance
1.0
2.0
m
CISS
Input Capacitance
7.5
10
COSS
Output Capacitance
2.0
3.5
CRSS
Reverse Transfer Capacitance
0.5
1.0
td(ON)
Turn-ON Delay Time
0.09
tr
Rise Time
0.45
td(OFF)
Turn-OFF Delay Time
0.1
tf
Fall Time
1.3
VSD
Diode Forward Voltage Drop
trr
Reverse Recovery Time
pF
VGS = -10V, VDS = 25V
f = 1MHz
VDD = 25V, ID = 1.0mA,
RGEN = 25Ω
µs
0.9
200
V
VGS = -10V, ISD = 1.0mA
ns
VGS = -10V, ISD = 1.0mA
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
90%
PULSE
GENERATOR
INPUT
-10V
10%
t(ON)
td(ON)
VDD
td(OFF)
RL
OUTPUT
Rgen
t(OFF)
tr
VDD
tF
D.U.T.
INPUT
10%
10%
OUTPUT
0V
90%
90%
12/13/010
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
2
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
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