PSS10MC1FT 2015-06
Application Note
Mitsubishi Semiconductors <Dual-In-Line Package Intelligent Power Module>
CONFIDENTIAL
PSS10MC1FT
TENTATIVE
Transfer-Mold Type
Insulated Type
(This is a RED INK Stamp)
Pre. K,Yamaguchi H,Kawafuji
Rev.
Apr. M,Sakai 8.June 2015
Applications :
AC400V three phase motor inverter drive.
Integrated Power Functions :
3φInverter+3φConverter+Brake
1200V/10A low-loss CSTBT inverter bridge with N-side open emitter structure for DC-to-AC
power conversion. Built-in Bootstrap Diode with current lilmiting resistor.
Integrated drive, protection and system control functions :
Inverter part
-For P-side
: Drive circuit, High voltage high-speed level shifting,
Control supply under-voltage (UV) protection.
-For N-side
: Drive circuit, Control supply under-voltage protection (UV),
Short circuit protection (SC)
-Fault signaling
: Corresponding to a SC fault (N-side IGBT), a UV fault (N-side supply)
-Temperature monitoring : Analog output of LVIC temperature
-Input interface
: 5V line (High Active).
Brake Part
-For IGBT
: Drive circuit, control supply under-voltage (UV) protection.
Fig. 1 Package Outlines
unit:mm
Note:
DIPIPM and CSTBT are registered trademarks of MITSUBISHI ELECTRIC CORPORATION.
DIPIPM
DPH-12180
(1/9)
APPLICATION NOTE
Application Note
Mitsubishi Semiconductors <Dual-In-Line Package Intelligent Power Module>
CONFIDENTIAL
PSS10MC1FT
TENTATIVE
Transfer-Mold Type
Insulated Type
(This is a RED INK Stamp)
Maximum Ratings (Tj=25C, unless otherwise noted):
Inverter Part:
Item
Symbol
Condition
Supply voltage
VCC
Applied between P-NU,NV,NW
Supply voltage (surge)
VCC(surge) Applied between P-NU,NV,NW
Collector-emitter voltage
VCES
Each IGBT collector current
Tc=25C
(Note1)
±IC
Each IGBT collector current (peak)
Tc=25C, less than 1ms
±ICP
Rating
900
1000
1200
(10)
(20)
Unit
V
V
V
A
A
Rating
900
1000
1200
(5)
(10)
1200
(5)
Unit
V
V
V
A
A
V
A
Rating
1600
10
Unit
V
A
(200)
A
(167)
A2s
Note1 Pulse width and period are limited due to junction temperature.
Brake Part:
Item
Supply voltage
Supply voltage (surge)
Collector-emitter voltage
Each IGBT collector current
Each IGBT collector current (peak)
Repetitive peak reverse voltage
Forward current
Symbol
VCC
VCC(surge)
VCES
±IC
±ICP
VRRM
IF
Condition
Applied between P-N(B)
Applied between P-N(B)
Tc=25C
(Note2)
Tc=25C, less than 1ms
Note2 Pulse width and period are limited due to junction temperature.
Converter Part:
Item
Repetitive peak reverse voltage
DC output current
Surge forward current
I2t for fusing
Symbol
VRRM
Io
IFSM
I2t
Control (Protection) Part
Item
Control supply voltage
Symbol
VD
Control supply voltage
VDB
Input voltage
VIN
Fault output supply voltage
Fault output current
Current sensing input voltage
VFO
IFO
VSC
DIPIPM
Condition
3φ rectifying circuit
1/2 cycle at 60Hz,Peak value,
Non-repetitive
Value for 1 cycle of surge current
Condition
Applied between VP1-VNC,VN1-VNC
Applied between VUFB-VUFS,
VVFB-VVFS ,VWFB-VWFS
Applied between UP,VP,WP,UN,VN,
WN,AIN-VNC
Applied between Fo-VNC
Sink current at Fo terminal
Applied between CIN-VNC
DPH-12180
(2/9)
Rating
20
Unit
V
20
V
-0.5~VD+0.5
V
-0.5~VD+0.5
(5)
-0.5~VD+0.5
V
mA
V
APPLICATION NOTE
Application Note
Mitsubishi Semiconductors <Dual-In-Line Package Intelligent Power Module>
CONFIDENTIAL
PSS10MC1FT
TENTATIVE
Transfer-Mold Type
Insulated Type
(This is a RED INK Stamp)
Total System
Item
Symbol
Self protection supply voltage limit
(short circuit protection capability)
VCC(PROT)
Junction temperature
Module case operation temperature
Storage temperature
Isolation voltage
Thermal Resistance :
Item
Junction to case thermal
resistance
Contact thermal
resistance (Note3)
Tj
Tc
Rating
Unit
800
V
(-30)~+150
(-30)~(+100)
C
C
-40~+125
C
2500
Vrms
Tstg
Viso
Symbol
Rth(j-c)Q
Rth(j-c)F
Rth(j-c)Q
Rth(j-c)F
Rth(j-c)R
Condition
VD=13.5~16.5V, Inverter part
Tj=125C, non-repetitive
less than 2μs
Inverter, brake, converter part
60Hz, Sinusoidal, AC 1 minute,
connection pins to heat sink plate
Condition
Inverter IGBT part (per 1/6 module)
Inverter FWD part (per 1/6 module)
Brake IGBT part
Brake FWD part
Converter part (per 1/6module)
Rth(c-f) Per 1 chip
Min.
Typ.
Max.
-
-
(1.70)
(2.30)
(1.90)
(2.30)
(1.30)
-
(0.25)
-
Unit
K/W
Note3
Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100μm~+200μm on the
contacting surface of DIPIPM and heat-sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is
determined by the thickness and the thermal conductivity of the applied grease.
Electrical Characteristics (Tj=25C, unless otherwise noted)
Inverter Part
Item
Symbol
Condition
Collector-emitter
Tj=25C
VD=VDB=15V
VCE(sat)
saturation voltage
VIN=5V, IC=10A,
Tj=125C
FWD forward voltage
VEC VIN=0V, -IC=10A
ton
VCC=600V, VD=VDB=15V
trr
IC=10A, VIN=0↔ 5V
Switching time
tc(on)
Tj=125C
toff
Inductive load
tc(off)
Collector-emitter
Tj=25C
ICES VCE=VCES
cut-off current
Tj=125C
Min.
(-)
-
Typ.
(1.50)
(1.80)
(2.40)
(1.90)
(0.60)
(0.60)
(2.80)
(0.50)
-
Max.
(-)
(-)
(-)
(-)
(-)
(-)
(-)
1
10
Unit
Min.
(-)
-
Typ.
(1.30)
(1.50)
(1.90)
(1.80)
(0.50)
(0.40)
(2.60)
(0.50)
-
Max.
(-)
(-)
(-)
(-)
(-)
(-)
(-)
1
10
Unit
V
V
μs
mA
Brake Part
Item
Collector-emitter
saturation voltage
FWD forward voltage
Switching time
Collector-emitter
cut-off current
DIPIPM
Symbol
VCE(sat)
VF
ton
trr
tc(on)
toff
tc(off)
ICES
Condition
VD=VDB=5V
VIN=5V, IC=5A
Tj=25C
Tj=125C
VIN=0V, -IC=5A
VCC=600V, VD=VDB=15V
IC=5A, VIN=0↔ 5V
Tj=125C
Inductive load
Tj=25C
Tj=125C
VCE=VCES
DPH-12180
(3/9)
APPLICATION NOTE
V
V
μs
mA
Application Note
Mitsubishi Semiconductors <Dual-In-Line Package Intelligent Power Module>
CONFIDENTIAL
PSS10MC1FT
TENTATIVE
Transfer-Mold Type
Insulated Type
(This is a RED INK Stamp)
Converter Part
Item
Repetitive reverse current
Forward voltage drop
Control (Protection) Part
Item
Symbol
Condition
IRRM VR=VRRM, Tj=125℃
VF
IF=10A
Symbol
ID
Circuit current
IDB
Fo output voltage
Shor circuit trip level
Input current
Control supply undervoltage protection
Fault output pulse width
Temperature output
VFOH
VFOL
Vsc(ref)
IIN
UVDBt
UVDBr
UVDt
UVDr
tFO
VOT
ON threshold voltage
Vth(on)
OFF threshold voltage
Vth(off)
Bootstrap Di
VF
forward voltage
Built-in limiting resistance
R
Min.
-
Condition
Typ.
(1.1)
Min.
4.9
(0.455)
0.70
(10.0)
(10.5)
(10.3)
(10.8)
1.6
VD=15V, VIN=5V
Total of VP1-VNC,
VN1-VNC
VD=15V, VIN=0V
VD=VDB=15V,VIN=5V
VUFB-VUFS,VVFB-VVFS,
VD=VDB=15V,VIN=0V
VWFB-VWFS
Vsc=0V, Fo terminal pull-up to 5V by 10kΩ
Vsc=1V, IFO=1mA
VIN=5V
Trip level
Reset level
Tj=25C
Trip level
Reset level
CFO=22nF
(Note 4)
LVIC temperature=100C,
Pull down R=5.1kΩ (Note 5)
Applied between UP,VP,WP,UN,VN,WN,
AIN-VNC
Max.
(7.0)
(1.4)
Unit
mA
V
Typ.
Max. Unit
(5.70)
(5.70)
mA
(0.55)
(0.55)
V
(0.95)
(0.480) (0.505) V
1.00
1.50
mA
(12.0)
(12.5)
V
(12.5)
(13.0)
2.4
ms
(2.89)
(3.02)
(3.41)
V
(0.8)
-
(3.5)
-
V
(-)
(0.9)
(1.3)
V
(16)
(20)
(24)
Ω
IF=(10)mA
including voltage drop by limiting resistor
Included in bootstrap Di
(Note 4) Fault signal is output when short circuit or control supply under-voltage protective functions operate at N-side.
-6
The fault output pulse-width tFO depends on the capacitance value of CFO (CFO = tFO  9.1  10 [F])
(Note 5) DIPIPM don't shutdown IGBTs and output fault signal automatically when temperature rises excessively.
When temperature exceeds the protect level that customer defined, controller (MCU) should stop the DIPIPM.
Mechanical Characteristics and Ratings
Item
Symbol
Mounting
Mounting torque

M4 screw
Condition
Recommended:
1.18N·m
Terminal pulling strength

Weight 19.6N
Bending strength

Weight 9.8N, 90deg. bend
DIPIPM
DPH-12180
(4/9)

EIAJED-4701
EIAJED-4701
Min.
Typ.
Max
Unit
0.98

1.47
N·m
10


s
2


times
APPLICATION NOTE
Application Note
Mitsubishi Semiconductors <Dual-In-Line Package Intelligent Power Module>
CONFIDENTIAL
PSS10MC1FT
TENTATIVE
Transfer-Mold Type
Insulated Type
(This is a RED INK Stamp)
Recommended Operation Conditions:
Item
Symbol
Supply voltage
Control supply voltage
VCC
VD
Control supply voltage
VDB
Control supply variation
Arm-shoot-through blocking time
PWM input frequency
Minimum input pulse width
Junction temperature
Recommended
Min. Typ. Max.
(0)
600 800
13.5 15.0 16.5
Condition
Applied between P-NU,NV,NW
Applied between VP1-VNC,VN1-VNC
Applied between
VUFB-VUFS,VVFB-VVFS,VWFB-VWFS
∆VD,
∆VDB
tdead
For each input signal, TC100C
fPWM
TC100C, Tj125C
PWIN(on) IC17A (Note 6)
(0)VCC800V,
IC10A
13.5VD16.5V,
13.0VDB18.5V,
PWIN(off) -20TC100C,
N line wiring inductance
10<IC17A
less than 10nH
(Note 7)
Tj
Unit
V
V
13.0
15.0
18.5
V
-1
-
+1
V/μs
(3.0)
(1.5)
-
20
-
μs
kHz
(3.0)
-
μs
(3.5)
-
-
-20
-
125
°C
(Note 7) DIPIPM might make no response to the input on signal with pulse width less than PWIN(on).
(Note 8) IPM might make delayed response or no response for the input signal with off pulse width less than PWIN(off).
Please refer below figure about delayed response.
About Delayed Response Against Shorter Input Off Signal Than PWIN(off) (P side only)
P Side Control Input
Internal IGBT Gate
Output Current Ic
t2
t1
Real line…off pulse width>PWIN(off); turn on time t1
Broken line…off pulse width<PWIN(off); turn on time t2
DIPIPM
DPH-12180
(5/9)
APPLICATION NOTE
Application Note
Mitsubishi Semiconductors <Dual-In-Line Package Intelligent Power Module>
CONFIDENTIAL
PSS10MC1FT
TENTATIVE
Transfer-Mold Type
Insulated Type
(This is a RED INK Stamp)
Fig.2 Internal Circuit
VP1
LVIC
AIN
B
VNC
N(B)
VP1
HVIC
P
VUFB
VUFS
UP
U
VVFB
VVFS
VP
V
VWFB
VWFS
WP
W
LVIC
VN1
NU
UN
VN
NV
WN
Fo
CIN
CFo
NW
VOT
P1
VNC
R
S
T
N1
DIPIPM
DPH-12180
(6/9)
APPLICATION NOTE
Application Note
Mitsubishi Semiconductors <Dual-In-Line Package Intelligent Power Module>
CONFIDENTIAL
PSS10MC1FT
TENTATIVE
Transfer-Mold Type
Insulated Type
(This is a RED INK Stamp)
Fig.3 Timing Charts of the Protective Functions
[A] Short-Circuit Protection ( N-side only, with external resistor and RC filter )
a1. Normal operation: IGBT turn on and carry current.
a2. Short circuit current detected (SC trigger).
a3. All N-side IGBTs' gates are hard interrupted.
a4. All N-side IGBT turn OFF.
a5. Fo output with a fixed pulse width (determined by the external capacitance CFO).
a6. Input “L”: IGBT off.
a7. Input “H”: IGBT on, but during the Fo output period the IGBT will not turn on.
a8. IGBT turns ON when LH signal is input after Fo is reset.
N-side control input
a6
Protection circuit state
a7
SET
RESET
Internal IGBT gate
a3
a2
SC
a1
a8
a4
Output current Ic
SC reference voltage
Sense voltage of
Rs
RC circuit time constant delay
Fault output Fo
a5
[B] Under- Voltage Protection (N-side, UVD)
b1. Control supply voltage V D rises: After VD level reaches under voltage reset level (UVDr),
the circuits start to operate when next input is applied.
b2. Normal operation: IGBT turn on and carry current.
b3. VD level dips to under voltage trip level. (UVDt).
b4. All N-side IGBT turn OFF in spite of control input condition.
b5. Fo is output for the period determined by the capacitance CFO but continuously during UV period.
b6. VD level reaches UVDr.
b7. Normal operation: IGBT turn on and carry current.
Control input
Protection circuit state
Control supply voltage VD
SET
RESET
RESET
UVDr
b1
UVDt
b2
b6
b3
b7
b4
Output current Ic
b5
Fault output Fo
DIPIPM
DPH-12180
(7/9)
APPLICATION NOTE
Application Note
Mitsubishi Semiconductors <Dual-In-Line Package Intelligent Power Module>
CONFIDENTIAL
PSS10MC1FT
TENTATIVE
Transfer-Mold Type
Insulated Type
(This is a RED INK Stamp)
[C] Under- Voltage Protection (P-side, UVDB )
c1. Control supply voltage VDB rises : After VDB level reaches under voltage reset level (UVDBr),
the circuits start to operate when next input is applied.
c2. Normal operation: IGBT turn on and carry current.
c3. VDB level dips to under voltage trip level (UVDBt).
c4. P-side IGBT of corresponding phase turns OFF in spite of control input signal level, but there is no
Fo signal output.
c5. VDB level reaches UVDBr.
c6. Normal operation: IGBT turn on and carry current.
Control input
Protection circuit state
Control supply voltage VDB
RESET
SET
RESET
UVDBr
c1
UVDBt
c2
c3
c4
c5
c6
Output current Ic
High-level (no fault output)
Fault output Fo
DIPIPM
DPH-12180
(8/9)
APPLICATION NOTE
Application Note
Mitsubishi Semiconductors <Dual-In-Line Package Intelligent Power Module>
CONFIDENTIAL
PSS10MC1FT
TENTATIVE
Transfer-Mold Type
Insulated Type
(This is a RED INK Stamp)
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appropriate measures such as (1) placement of substitutive, auxiliary circuits, (2) use of non-flammable material or (3)
prevention against any malfunction or mishap.
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DIPIPM
DPH-12180
(9/9)
APPLICATION NOTE
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