datasheet for 2N3498L by Semicoa

datasheet for 2N3498L by Semicoa
2N3498L
Silicon NPN Transistor
D a ta S h e e t
Description
Applications
SEMICOA Corporation offers:
• General purpose
• Low power
• NPN silicon transistor
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N3498LJ)
• JANTX level (2N3498LJX)
• JANTXV level (2N3498LJV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Features
•
•
•
•
Hermetically sealed TO-5 metal can
Also available in chip configuration
Chip geometry 5620
Reference document:
MIL-PRF-19500/366
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
Please contact SEMICOA for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
TC = 25°C unless otherwise specified
Symbol
VCEO
Rating
100
Collector-Base Voltage
VCBO
100
Unit
Volts
Volts
Emitter-Base Voltage
VEBO
6
Volts
Collector Current, Continuous
IC
500
mA
Power Dissipation, TA = 25OC
Derate linearly above 25OC
PT
1
5.71
RθJA
175
W
mW/°C
°C/W
TJ
-65 to +200
°C
TSTG
-65 to +200
°C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Copyright© 2010
Rev. H.2
SEMICOA Corporation
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
Page 1 of 2
2N3498L
Silicon NPN Transistor
D a ta S h e e t
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Collector-Emitter Breakdown Voltage
V(BR)CEO
Test Conditions
Min
IC = 10 mA
Typ
Max
Units
Volts
100
Collector-Base Cutoff Current
ICBO1
ICBO2
ICBO3
VCB = 100 Volts
VCB = 50 Volts
VCB = 50 Volts, TA = 150°C
10
50
50
Collector-Emitter Cutoff Current
ICEO
VCE = 80 Volts
1
µA
nA
µA
µA
Emitter-Base Cutoff Current
IEBO1
IEBO2
VEB = 6 Volts
VEB = 4 Volts
10
25
µA
nA
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
On Characteristics
Parameter
Symbol
hFE1
hFE2
hFE3
hFE4
hFE6
hFE7
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
VBEsat1
VBEsat3
VCEsat1
VCEsat3
Test Conditions
IC = 0.1 mA, VCE = 10 Volts
IC = 1.0 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
IC = 150 mA, VCE = 10 Volts
IC = 500 mA, VCE = 10 Volts
IC = 150 mA, VCE = 10 Volts
TA = -55°C
IC = 10 mA, IB = 1 mA
IC = 300 mA, IB = 30 mA
IC = 10 mA, IB = 1 mA
IC = 300 mA, IB = 30 mA
Min
20
25
35
40
15
22
Test Conditions
VCE = 20 Volts, IC = 20 mA,
f = 100 MHz
VCE = 10 Volts, IC = 10 mA,
f = 1 kHz
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
VCE = 10 Volts, IC = 0.5 mA,
f = 1 kHz, Rg = 1 kΩ
VCE = 10 Volts, IC = 0.5 mA,
f = 10 kHz, Rg = 1 kΩ
Min
Typ
Max
Units
120
0.8
1.4
0.2
0.6
Volts
Max
Units
Volts
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Symbol
|hFE|
hFE
Open Circuit Output Capacitance
COBO
Open Circuit Input Capacitance
CIBO
NF1
Noise Figure
NF2
Typ
1.5
8
35
300
10
pF
80
pF
16
dB
6
Switching Characteristics
Saturated Turn-On Time
tON
Saturated Turn-Off Time
tOFF
Copyright© 2010
Rev. H.2
VEB = 5 Volts, IC = 150 mA,
IB1 = 15 mA
IC = 150 mA, IB1=IB2=15 mA
115
ns
1,150
ns
SEMICOA Corporation
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
Page 2 of 2
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