CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT

CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT
CGHV96100F2
100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT
Cree’s CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor
(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET
offers excellent power added efficiency in comparison to other technologies. GaN
has superior properties compared to silicon or gallium arsenide, including higher
breakdown voltage, higher saturated electron drift velocity and higher thermal
conductivity. GaN HEMTs also offer greater power density and wider bandwidths
compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged
PN: CGHV961
00F2
Package Type
: 440210
package for optimal electrical and thermal performance.
Typical Performance Over 8.4-9.6 GHz (TC = 25˚C)
Parameter
8.4 GHz
8.8 GHz
9.0 GHz
9.2 GHz
9.4 GHz
9.6 GHz
Units
Linear Gain
12.7
12.4
12.7
13.1
13.1
12.4
dB
Output Power
151
147
150
152
140
131
W
Power Gain
10.8
10.6
10.7
10.7
10.5
10.2
dB
44
42
44
43
45
45
%
Power Added Efficiency
Note: Measured in CGHV96100F2-AMP (838179) under 100 µS pulse width, 10% duty, Pin 41.0 dBm (12.6 W)
15
Rev 2.0 – May 20
Features
Applications
• 8.4 - 9.6 GHz Operation
• Marine Radar
• 145 W POUT typical
• Weather Monitoring
• 10 dB Power Gain
• Air Traffic Control
• 45 % Typical PAE
• Maritime Vessel Traffic Control
• 50 Ohm Internally Matched
• Port Security
• <0.3 dB Power Droop
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Rating
Units
Drain-source Voltage
VDSS
100
Volts
25˚C
Gate-source Voltage
VGS
-10, +2
Volts
25˚C
Power Dissipation
PDISS
115.2 / 222.0
Watts
(CW / Pulse)
Storage Temperature
TSTG
-65, +150
˚C
TJ
225
˚C
Operating Junction Temperature
Conditions
Maximum Drain Current
IDMAX
12
Amps
Maximum Forward Gate Current
IGMAX
28.8
mA
Soldering Temperature2
TS
245
˚C
Screw Torque
τ
40
in-oz
Thermal Resistance, Junction to Case
RθJC
0.73
˚C/W
Pulse Width = 100 µs, Duty Cycle = 10%, 85˚C,
PDISS = 173 W
Thermal Resistance, Junction to Case
RθJC
1.07
˚C/W
CW, 85˚C, PDISS = 115.2 W
TC
-40, +150
˚C
1
Case Operating Temperature3
25˚C
Note:
1
Current limit for long term reliable operation.
2
Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
3
See also, the Power Dissipation De-rating Curve on Page 9.
Electrical Characteristics (Frequency = 9.6 GHz unless otherwise stated; TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(TH)
-3.8
-3.0
-2.3
V
VDS = 10 V, ID = 28.8 mA
Gate Quiscent Voltage
VGS(Q)
–
-2.7
–
V
VDS = 40 V, ID = 1000 mA
Saturated Drain Current2
IDS
21.0
26.0
–
A
VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBD
100
–
–
V
VGS = -8 V, ID = 28.8 mA
Small Signal Gain
S21
10.5
12.4
–
dB
VDD = 40 V, IDQ = 1000 mA, PIN = -20 dBm
Input Return Loss 1
S11
–
–5.2
-2.8
dB
Input Return Loss 2
S11
–
–
-3.3
dB
Output Return Loss
S22
–
–12.3
-6.0
dB
VDD = 40 V, IDQ = 1000 mA, PIN = -20 dBm
Power Output3,4
POUT
100
131.0
–
W
VDD = 40 V, IDQ = 1000 mA, PIN = 41 dBm
Power Added Efficiency3,4
PAE
30
45
–
%
VDD = 40 V, IDQ = 1000 mA, PIN = 41 dBm
PG
–
10.2
–
dB
VDD = 40 V, IDQ = 1000 mA, PIN = 41 dBm
VSWR
–
–
5:1
Y
No damage at all phase angles, VDD = 40 V, IDQ = 1000 mA,
DC Characteristics1
RF Characteristics3
Power Gain3,4
Output Mismatch Stress
VDD = 40 V, IDQ = 1000 mA, PIN = -20 dBm,
8.4 - 9.4 GHz
VDD = 40 V, IDQ = 1000 mA, PIN = -20 dBm,
9.4 - 9.6 GHz
Notes:
1
Measured on-wafer prior to packaging.
2
Scaled from PCM data.
3
Measured in CGHV96100F2-AMP (838179) under 100 µS pulse width, 10% duty
4
Fixture loss de-embedded using the following offsets: Frequency = 9.6 GHz. Input = 0.5 dB and Output = 0.5 dB.
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
2
CGHV96100F2 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV96100F2 Typical Performance
Figure 1. - Small Signal Gain and Return Loss vs Frequency
Typical small signal gain and retrurn loss vs. frequncy
of CGHV96100F2
measured in CGHV96100F2-AMP
of CGHV96100F2 Measured in a CGHV96100F2 TB
VDS =Vds
40 =40
V, IDQ
1000mA
V, =Idq
=1000 mA
20
Gain (dB), Return Losses (dB)
15
10
5
0
-5
-10
S11
-15
S21
S22
-20
-25
7
7.5
8
8.5
9
9.5
10
10.5
11
Frequency (GHz)
Figure 2. - Power Gain vs. Frequency and Input Power
PG=vs.
Freq.
& Pin
100
µsec,
Duty Cycle = 10%
VDD = 40 V, Pulse Width
Pulse 100 us / 10 % duty
15
14
13
Power Gain (dB)
12
11
10
9
8
Pin 39
Pin 40
7
Pin 41
Pin 42
6
Psat
5
7.6
7.8
8.0
8.2
8.4
8.6
8.8
9.0
Frequency (GHz)
9.2
9.4
9.6
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
3
CGHV96100F2 Rev 2.0
9.8
10.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV96100F2 Typical Performance
Figure 3. - Output Power vs. Input Power
Pin Duty Cycle = 10%
VDD = 40 V, Pulse Width =Pout
100vs.
µsec,
Pulsed 100 us / 10 % Duty
54
52
Output Power (dBm)
50
48
46
44
42
40
38
9.0 GHz
36
9.2 GHz
9.4 GHz
34
9.6 GHz
32
30
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
Input Power (dBm)
Figure 4. - Power Gain vs. Frequency and Input Power
PG vs. Pin
VDD = 40 V, Pulse Pulsed
Width 100
= 100
Duty Cycle = 10%
us / µsec,
10 % Duty
15
14
13
Power Gain (dB)
12
11
10
9
8
9.0 GHz
7
9.2 GHz
6
9.6 GHz
9.4 GHz
5
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
Input Power (dBm)
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
4
CGHV96100F2 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV96100F2 Typical Performance
Figure 5. - Power Added
Efficiency
vs. Input Power
PAE
vs. Pin
100
us /µsec,
10 % Duty
VDD = 40 V, Pulse Pulsed
Width =
100
Duty Cycle = 10%
60
55
Power Added Efficiency (%)
50
45
40
35
30
25
20
9.0 GHz
9.2 GHz
15
9.4 GHz
9.6 GHz
10
5
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
Input Power (dBm)
Figure 6. - Output Power vs. Time
Power
vs. Time
VDD = 40 V, PIN =Output
41 dBm,
Duty
Cycle = 10%
Pin 41 dBm
52.00
51.90
51.80
Power (dBm)
51.70
51.60
51.50
10us
50uS
51.40
100uS
300uS
51.30
51.20
51.10
51.00
0
50
100
150
200
250
300
350
400
450
Pulse Length (µS)
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
5
CGHV96100F2 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV96100F2 Typical Performance
Figure 7. - Output Power vs. Input Power & Frequency
VDD = 40 V, Pulse Width
= 100 µsec, Duty Cycle = 10%
Pout vs. Freq. & Pin
Pulse 100 us / 10 % duty
53.00
52.50
Output Power (dBm)
52.00
51.50
51.00
50.50
Pin 39
50.00
Pin 40
Pin 41
49.50
Pin 42
Psat
49.00
7.6
7.8
8.0
8.2
8.4
8.6
8.8
9.0
9.2
9.4
9.6
9.8
10.0
Frequency (GHz)
Figure 8. - Power Added Efficiency vs. Input Power & Frequency
VDD = 40 V, Pulse Width
= 100
µsec,
Duty Cycle = 10%
PAE
vs. Freq.
& Pin
Pulse 100 us / 10 % duty
60
55
Power Added Efficiency (%)
50
45
40
35
30
Pin 39
25
Pin 40
Pin 41
20
Pin 42
Psat
15
10
7.6
7.8
8.0
8.2
8.4
8.6
8.8
9.0
9.2
9.4
9.6
9.8
10.0
Frequency (GHz)
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
6
CGHV96100F2 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV96100F2-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
R1
C1, C11
Description
Qty
RES, 47 OHM +/-1%, 1/16 W, 0603, SMD
1
CAP, 1.6pF, +/- 0.1 pF, 200V, 0402, ATC 600L
2
C2, C12
CAP, 1.0pF, +/- 0.1 pF, 200V, 0402 ATC 600L
2
C3, C13
CAP, 10 pF +/-5%, 0603, ATC
2
C4, C14
CAP, 470 pF +/-5%, 100 V, 0603
2
C5, C15
CAP, 33,000 pF, 0805, 100 V, X7R
2
C6
CAP, 10 uF, 16 V, TANTALUM
1
C18
CAP, 470 uF +/-20%, ELECTROLYTIC
1
CONNECTOR, SMA, PANEL MOUNT JACK, FLANGE,
4-HOLE, BLUNT POST, 20MIL
2
J3
CONNECTOR, HEADER, RT>PLZ .1CEN LK 9POS
1
J4
CONNECTOR, SMB, STRAIGHT JACK
1
-
PCB, TEST FIXTURE, TACONICS RF35P, 20 MIL THK,
440210 PKG
1
-
2-56 SOC HD SCREW 1/4 SS
4
-
#2 SPLIT LOCKWASHER SS
4
CGHV96100F2
1
J1,J2
Q1
CGHV96100F2-AMP Demonstration Amplifier Circuit
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
7
CGHV96100F2 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV96100F2-AMP Demonstration Amplifier Circuit Schematic
CGHV96100F2-AMP Demonstration Amplifier Circuit Outline
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
8
CGHV96100F2 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV96100F2 Power Dissipation De-rating Curve
Power dissipation derating curve vs. Max Tcase
CW & Pulse (100 uS/ 10% duty)
260
240
220
Power Dissipation (W)
200
180
Pulse 100uS / 10%
CW
160
140
Note 1
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature (C)
Note 1 : Shaded area exceeds Maximum Case Operating Temperature (See Page 2)
CGHV96100F2 Transient Curve
CGHV96100F
6 W/mm
1.2
1.1
ThetaJC ((⁰C/W)
1
0.9
0.8
0.7
10% Duty Cycle
0.6
0.5
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
Time (sec)
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
9
CGHV96100F2 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Dimensions CGHV96100F2 (Package Type —
­ 440210)
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
10
CGHV96100F2 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Part Number System
CGHV96100F2
Package, Power Test
Power Output (W)
Upper Frequency (GHz)
Cree GaN HEMT High Voltage
Parameter
Upper Frequency
1
Power Output
Package
Value
Units
9.6
GHz
100
W
Flange
-
Table 1.
Note1: Alpha characters used in frequency code
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code
Code Value
A
0
B
1
C
2
D
3
E
4
F
5
G
6
H
7
J
8
K
9
Examples:
1A = 10.0 GHz
2H = 27.0 GHz
Table 2.
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
11
CGHV96100F2 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Ordering Information
Order Number
Description
Unit of Measure
CGHV96100F2
GaN HEMT
Each
CGHV96100F2-TB
GaN HEMT
Each
CGHV96100F2-AMP
Test board without GaN HEMT
Each
CGHV96100F2-JMT
Delivered in a JEDEC Matrix tray
TBD parts / tray
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
12
CGHV96100F2 Rev 2.0
Image
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes
no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the
average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in
different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical
experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal
injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE
logo are registered trademarks of Cree, Inc.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/rf
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
13
CGHV96100F2 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Cree, Inc.:
CGHV96100F2 CGHV96100F2-TB
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