datasheet for HMC311SC70 by Hittite Microwave

datasheet for HMC311SC70 by Hittite Microwave
HMC311SC70 / 311SC70E
v02.1108
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 8 GHz
Typical Applications
Features
The HMC311SC70(E) is ideal for:
P1dB Output Power: +15 dBm
• Cellular / PCS / 3G
Output IP3: +30 dBm
• WiBro / WiMAX / 4G
Gain: 15 dB
• Fixed Wireless & WLAN
Cascadable, 50 Ohm I/O’s
• CATV & Cable Modem
Single Supply: +5V
• Microwave Radio & Test Equipment
Industry Standard SC70 Package
Functional Diagram
General Description
The HMC311SC70(E) is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC SMT
DC to 8 GHz ampliier. Packaged in an industry
standard SC70, the ampliier can be used as either
a cascadable 50 Ohm gain stage or to drive the LO
port of HMC mixers with up to +15 dBm output power.
The HMC311SC70(E) offers 15 dB of gain and an
output IP3 of +30 dBm while requiring only 54 mA
from a +5V supply. The Darlington topology results in
reduced sensitivity to normal process variations, and
yields excellent gain stability over temperature while
requiring a minimal number of external bias
components.
Electrical Specii cations, Vs= 5V, Rbias= 22 Ohm, TA = +25° C
Parameter
Min.
Typ.
14.0
13.0
12.5
11.0
15.0
15.0
14.5
13.0
Gain
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 6.0 GHz
6.0 - 8.0 GHz
Gain Variation Over Temperature
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 6.0 GHz
6.0 - 8.0 GHz
0.004
0.007
0.012
0.018
Return Loss Input / Output
DC - 8.0 GHz
15
Reverse Isolation
DC - 8.0 GHz
Output Power for 1 dB Compression (P1dB)
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
6.0 - 8.0 GHz
Output Third Order Intercept (IP3)
DC - 2.0 GHz
2.0 - 6.0 GHz
6.0 - 8.0 GHz
Noise Figure
DC - 8.0 GHz
Supply Current (Icq)
13.5
12.0
10.0
8.0
Max.
dB
dB
dB
dB
0.007
0.012
0.016
0.022
dB/ °C
dB/ °C
dB/ °C
dB
18
dB
15.5
15.0
13.0
11.0
dBm
dBm
dBm
dBm
30
27
24
dBm
dBm
dBm
5
55
dB
74
Note: Data taken with broadband bias tee on device output.
9 - 14
Units
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
mA
HMC311SC70 / 311SC70E
v02.1108
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 8 GHz
Gain vs. Temperature
20
15
18
10
16
5
0
S21
S11
S22
-5
-10
9
14
12
10
+25C
-40C
+85C
8
-15
6
-20
4
-25
0
1
2
3
4
5
6
7
8
9
0
10
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
RETURN LOSS (dB)
RETURN LOSS (dB)
-5
+25C
+85C
-40C
-5
-10
-15
+25C
+85C
-40C
-10
-15
-20
-25
-20
-30
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
FREQUENCY (GHz)
4
5
6
7
8
9
10
9
10
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
Noise Figure vs. Temperature
0
10
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
20
GAIN (dB)
RESPONSE (dB)
Broadband Gain & Return Loss
8
NOISE FIGURE (dB)
REVERSE ISOLATION (dB)
9
-5
+25C
+85C
-40C
-10
-15
-20
+25C
+85C
-40C
7
6
5
4
3
2
1
-25
0
0
1
2
3
4
5
6
FREQUENCY (GHz)
7
8
9
10
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 15
HMC311SC70 / 311SC70E
v02.1108
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 8 GHz
P1dB vs. Temperature
18
16
16
14
14
Psat (dBm)
P1dB (dBm)
18
12
10
+25C
+85C
-40C
8
10
+25C
+85C
-40C
6
4
4
0
1
2
3
4
5
6
7
8
9
10
0
1
2
FREQUENCY (GHz)
Power Compression @ 1 GHz
16
Pout (dBm), GAIN (dB), PAE (%)
18
16
14
12
10
8
6
4
2
Pout
Gain
PAE
0
-2
-6
-4
-2
0
2
4
22
20
18
+25C
+85C
-40C
12
10
5
FREQUENCY (GHz)
6
7
8
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
24
4
10
10
Pout
Gain
PAE
8
6
4
2
0
-6
-4
-2
0
2
4
6
80
40
35
60
30
25
40
20
15
10
5
Gain
P1dB
Psat
IP3
Icq
0
0
4.5
20
4.75
5
5.25
Vs (Vdc)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5.5
Icq (mA)
IP3 (dBm)
26
3
9
Gain, Power, IP3 & Supply Current vs.
Supply Voltage @ 1 GHz
28
2
8
INPUT POWER (dBm)
30
1
7
12
-4
-20 -18 -16 -14 -12 -10 -8
6
34
0
6
-2
Output IP3 vs. Temperature
14
5
14
INPUT POWER (dBm)
16
4
Power Compression @ 6 GHz
18
-4
-20 -18 -16 -14 -12 -10 -8
3
FREQUENCY (GHz)
32
9 - 16
12
8
6
Pout (dBm), GAIN (dB), PAE (%)
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
Psat vs. Temperature
HMC311SC70 / 311SC70E
v02.1108
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 8 GHz
Absolute Maximum Ratings
+7V
RF Input Power (RFIN)(Vcc = +3.9V)
+10 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 5.21 mW/°C above 85 °C)
0.34 W
Thermal Resistance
(junction to lead)
191 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD MATERIAL: COPPER ALLOY
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Collector Bias Voltage (Vcc)
3. LEAD PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC311SC70
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
HMC311SC70E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
Package Marking
[1]
311
[2]
311
[1] Max peak relow temperature of 235 °C
[2] Max peak relow temperature of 260 °C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 17
HMC311SC70 / 311SC70E
v02.1108
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 8 GHz
Pin Descriptions
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
Pin Number
Function
Description
Interface Schematic
1, 2, 4, 5
GND
These pins must be connected to RF/DC ground.
3
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
6
RFOUT
RF output and DC Bias for the output stage.
Application Circuit
Note:
1. Select Rbias to achieve Icq using equation below,
Rbias > 22 Ohm.
2. External blocking capacitors are required on
RFIN and RFOUT.
Icq = Vs - 3.8
Rbias
Recommended Component Values
Frequency (MHz)
Component
9 - 18
50
900
1900
2200
2400
3500
5200
5800
L1
270 nH
56 nH
22 nH
22 nH
15 nH
8.2 nH
3.3 nH
3.3 nH
C1, C2
0.01 μF
100 pF
100 pF
100 pF
100 pF
100 pF
100 pF
100 pF
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC311SC70 / 311SC70E
v02.1108
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 8 GHz
Evaluation PCB
List of Materials for Evaluation PCB 118040 [1]
Item
Description
J1 - J2
PCB Mount SMA Connector
J3 - J4
DC Pin
C1 - C3
100 pF Capacitor, 0402 Pkg.
C4
1000 pF Capacitor, 0603 Pkg.
C5
2.2 μF Capacitor, Tantalum
R1
22 Ohm Resistor, 1210 Pkg.
L1
22 nH Inductor, 0603 Pkg.
U1
HMC311SC70 / HMC311SC70E
PCB [2]
117360 Evaluation PCB
The circuit board used in the inal application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads should be connected directly to the
ground plane similar to that shown. A sufficient
number of via holes should be used to connect
the top and bottom ground planes. The evaluation
board should be mounted to an appropriate heat
sink. The evaluation circuit board shown is available
from Hittite upon request.
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 19
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