datasheet for TPC6009-H by Toshiba Electronics Europe

datasheet for TPC6009-H by Toshiba Electronics Europe
TPC6009-H
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TPC6009-H
1. Applications
•
High-Efficiency DC-DC Converters
•
Notebook PCs
•
Mobile Handsets
2. Features
(1)
Small, thin package
(2)
High-speed switching
(3)
Small gate charge: QSW = 1.0 nC (typ.)
(4)
(5)
(6)
Low drain-source on-resistance: RDS(ON) = 66 mΩ (typ.) (VGS = 4.5 V)
Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)
Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
3. Packaging and Internal Circuit
1, 2, 5, 6: Drain
3: Gate
4: Source
VS-6
4. Absolute Maximum Ratings (Note) (Ta = 25
 unless otherwise specified)
25
Characteristics
Symbol
Rating
Unit
V
Drain-source voltage
VDSS
40
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
5.3
Drain current (pulsed)
(Note 1)
IDP
21.2
A
Power dissipation
(t = 5 s)
(Note 2)
PD
2.2
W
Power dissipation
(t = 5 s)
(Note 3)
PD
0.7
W
(Note 4)
EAS
5.21
mJ
IAR
5.3
A

Single-pulse avalanche energy
Avalanche current
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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5. Thermal Characteristics
Characteristics
Symbol
Max
Unit
Channel-to-ambient thermal resistance
(t = 5 s)
(Note 2)
Rth(ch-a)
56.8
/W
Channel-to-ambient thermal resistance
(t = 5 s)
(Note 3)
Rth(ch-a)
178
/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 4: VDD = 24 V, Tch = 25 (initial), L = 0.2 mH, RG = 1 Ω, IAR = 5.3 A
Fig. 5.1 Device Mounted on a Glass-Epoxy
Board (a)
Note:
Fig. 5.2 Device Mounted on a Glass-Epoxy
Board (b)
This transistor is sensitive to electrostatic discharge and should be handled with care.
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6. Electrical Characteristics
 unless otherwise specified)
6.1. Static Characteristics (Ta = 25
25
Characteristics
Symbol
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Test Condition
Min
Typ.
Max
Unit


±0.1
µA
IGSS
VGS = ±20 V, VDS = 0 V
IDSS
VDS = 40 V, VGS = 0 V


10
V(BR)DSS
ID = 10 mA, VGS = 0 V
40


V
V(BR)DSX
ID = 10 mA, VGS = -20 V
25


Vth
VDS = 10 V, ID = 0.1 mA
1.3

2.3
RDS(ON)
VGS = 4.5 V, ID = 2.7 A

66
98
VGS = 10 V, ID = 2.7 A

53
81
Min
Typ.
Max
Unit

225
290
pF
mΩ
 unless otherwise specified)
6.2. Dynamic Characteristics (Ta = 25
25
Test Condition
Symbol
Characteristics
Ciss
Input capacitance
VDS = 10 V, VGS = 0 V, f = 1 MHz
Reverse transfer capacitance
Crss

13
21
Output capacitance
Coss

54

Gate resistance
rg
VDS = 10 V, VGS = 0 V, f = 5 MHz

4.7
7.1
Ω
Switching time (rise time)
tr
See Figure 6.2.1.

2.2

ns
Switching time (turn-on time)
ton

6.8

tf

1.7

toff

11

Min
Typ.
Max
Unit
nC
Switching time (fall time)
Switching time (turn-off time)
Fig. 6.2.1 Switching Time Test Circuit
 unless otherwise specified)
6.3. Gate Charge Characteristics (Ta = 25
25
Characteristics
Symbol
Total gate charge (gate-source plus
gate-drain)
Qg
Test Condition
VDD ≈ 32 V, VGS = 10 V, ID = 5.3 A

4.7

VDD ≈ 32 V, VGS = 5 V, ID = 5.3 A

2.6

VDD ≈ 32 V, VGS = 10 V, ID = 5.3 A
Gate-source charge 1
Qgs1

0.8

Gate-drain charge
Qgd

1.3

Gate switch charge
QSW

1.0

 unless otherwise specified)
25
6.4. Source-Drain Characteristics (Ta = 25
Characteristics
Reverse drain current (pulsed)
Diode forward voltage
Symbol
(Note 5)
Test Condition
Min
Typ.
Max
Unit
IDRP



21.2
A
VDSF
IDR = 5.3 A, VGS = 0 V


-1.2
V
Note 5: Ensure that the channel temperature does not exceed 150.
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7. Marking
Fig. 7.1 Marking
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8. Characteristics Curves (Note)
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 RDS(ON) - ID
Fig. 8.6 RDS(ON) - Ta
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Fig. 8.7 IDR - VDS
Fig. 8.8 Capacitance - VDS
Fig. 8.9 Vth - Ta
Fig. 8.10 Dynamic Input/Output Characteristics
Fig. 8.11 PD - Ta
(Guaranteed Maximum)
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Fig. 8.12 rth - tw
(Guaranteed Maximum)
Fig. 8.13 Safe Operating Area
(Guaranteed Maximum)
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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Package Dimensions
Unit: mm
Weight: 0.011 g (typ.)
Package Name(s)
TOSHIBA: 2-3T1S
Nickname: VS-6
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RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
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written permission, reproduction is permissible only if reproduction is without alteration/omission.
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for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,
including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating
and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample
application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.
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noncompliance with applicable laws and regulations.
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