datasheet for AP9575AGH-HF by Advanced Power Electronics Corp.

datasheet for AP9575AGH-HF by Advanced Power Electronics Corp.
AP9575AGH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Higher Gate-Source Voltage
BVDSS
D
-60V
RDS(ON)
Simple Drive Requirement
Fast Switching Characteristic
64m
ID
G
-17A
RoHS Compliant & Halogen-Free
S
Description
G
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9575AGJ)
are available for low-profile applications.
G
D
D
S
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-60
V
VGS
Gate-Source Voltage
+30
V
ID@TC=25
Continuous Drain Current, VGS @ 10V
-17
A
ID@TC=100
Continuous Drain Current, VGS @ 10V
-11
A
1
IDM
Pulsed Drain Current
-60
A
PD@TC=25
Total Power Dissipation
36
W
Linear Derating Factor
0.29
W/
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
Rthj-c
Parameter
Value
Maximum Thermal Resistance, Junction-case
3
Units
3.5
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
62.5
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
/W
Data and specifications subject to change without notice
1
201105313
AP9575AGH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-60
-
-
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-12A
-
-
64
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-9A
-
12
-
S
IDSS
Drain-Source Leakage Current
VDS=-60V, VGS=0V
-
-
-10
uA
Drain-Source Leakage Current (T j=125oC) VDS=-48V, VGS=0V
-
-
-250
uA
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+100
nA
ID=-12A
-
35
56
nC
IGSS
2
V
m
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-48V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
12
-
nC
VDS=-30V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-12A
-
23
-
ns
td(off)
Turn-off Delay Time
RG=3.3 ,VGS=-10V
-
45
-
ns
tf
Fall Time
RD=2.5
-
60
-
ns
Ciss
Input Capacitance
VGS=0V
-
1440 2300
pF
Coss
Output Capacitance
VDS=-25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
120
-
pF
Min.
Typ.
IS=-12A, VGS=0V
-
-
-1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-12A, VGS=0V,
-
43
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
75
-
nC
Notes:
1.Pulse width limited Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9575AGH/J-HF
40
60
-10V
-7.0V
40
-5.0V
-4.5V
20
V G =-3.0V
30
-5.0V
20
-4.5V
V G =- 4 .0V
10
0
0
0
2
4
6
8
0
10
2
4
6
8
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
210
2.0
I D = -9 A
T C =25
I D = - 12 A
V G =-10V
1.8
)
Normalized RDS(ON)
170
RDS(ON) (m
-10V
-7.0V
TC=150oC
-ID , Drain Current (A)
-ID , Drain Current (A)
T C =25 o C
130
90
1.6
1.4
1.2
1.0
0.8
0.6
50
0.4
2
4
6
8
10
-50
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
16.0
3.0
12.0
2.5
-VGS(th) (V)
-IS(A)
Fig 3. On-Resistance v.s. Gate Voltage
T j =150 o C
0
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
T j =25 o C
8.0
4.0
2.0
1.5
0.0
1.0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
12
2400
10
2000
8
f=1.0MHz
1600
I D = -12A
V DS = -48V
C (pF)
-VGS , Gate to Source Voltage (V)
AP9575AGH/J-HF
6
C iss
1200
4
800
2
400
0
0
0
10
20
30
40
C oss
C rss
1
50
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthjc)
Operation in this
area limited by
RDS(ON)
100us
-ID (A)
10
1ms
10ms
100ms
DC
1
o
T C =25 C
Single Pulse
0.1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
-ID , Drain Current (A)
V DS = -5V
o
T j =25 C
VG
o
T j =150 C
QG
20
-10V
QGS
QGD
10
Charge
Q
0
0
2
4
6
8
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
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