bfg97

bfg97
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG97
NPN 5 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
DESCRIPTION
BFG97
PINNING
NPN planar epitaxial transistor
mounted in a plastic SOT223
envelope.
It features excellent output voltage
capabilities, and is primarily intended
for use in MATV applications.
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
4
age
PNP complement is the BFG31.
1
2
3
Top view
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−
20
V
VCEO
collector-emitter voltage
open base
−
−
15
V
IC
DC collector current
−
−
100
mA
Ptot
total power dissipation
up to Ts = 125 °C (note 1)
−
−
1
W
hFE
DC current gain
IC = 70 mA; VCE = 10 V; Tj = 25 °C
25
80
−
fT
transition frequency
IC = 70 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 °C
−
5.5
−
GHz
GUM
maximum unilateral power gain
IC = 70 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 °C
−
16
−
dB
IC = 70 mA; VCE = 10 V;
f = 800 MHz; Tamb = 25 °C
−
12
−
dB
IC = 70 mA; VCE = 10 V;
dim = −60 dB; RL = 75 Ω;
f(p+q−r) = 793.25 MHz; Tamb = 25 °C
−
700
−
mV
MAX.
UNIT
Vo
output voltage
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
DC collector current
−
100
mA
Ptot
total power dissipation
up to Ts = 125 °C (note 1)
−
1
W
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
175
°C
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG97
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to
soldering point
THERMAL RESISTANCE
up to Ts = 125 °C (note 1)
50 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 10 V
−
−
100
hFE
DC current gain
IC = 70 mA; VCE = 10 V
25
80
−
fT
transition frequency
IC = 70 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 °C
−
5.5
−
GHz
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
1.5
−
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
6.5
−
pF
Cre
feedback capacitance
IC = 0; VCE = 10 V; f = 1 MHz
−
1
−
pF
GUM
maximum unilateral power gain
(note 1)
IC = 70 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 °C
−
16
−
dB
IC = 70 mA; VCE = 10 V;
f = 800 MHz; Tamb = 25 °C
−
12
−
dB
note 2
−
750
−
mV
note 3
−
700
−
mV
note 4
−
−56
−
dB
note 5
−
−53
−
dB
Vo
output voltage
d2
second order intermodulation
distortion
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
G UM
S 21
- dB.
= 10 log ------------------------------------------------------------2 
2

 1 – S 11   1 – S 22 
2. dim = −60 dB (DIN 45004B); IC = 70 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C
Vp = Vo at dim = −60 dB;
Vq = Vo −6 dB; fp = 445.25 MHz;
Vr = Vo −6 dB; fq = 453.25 MHz; fr = 455.25 MHz;
measured at f(p+q−r) = 443.25 MHz.
3. dim = −60 dB (DIN 45004B); IC = 70 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C
Vp = Vo at dim = −60 dB;
Vq = Vo −6 dB; fp = 795.25 MHz;
Vr = Vo −6 dB; fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(p+q−r) = 793.25 MHz.
4.
IC = 70 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C;
Vp = Vq = Vo = 50 dBmV; f(p+q) = 450 MHz; fp = 50 MHz; fq = 400 MHz.
5. IC = 70 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C;
Vp = Vq = Vo = 50 dBmV; f(p+q) = 810 MHz; fp = 250 MHz; fq = 560 MHz.
September 1995
3
nA
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG97
,
VCC
handbook, full pagewidth
L2
VBB
C4
R1
C1
L4
L6
L5
C3
input
75 Ω
C7
L1
C8
R2
output
75 Ω
L3
DUT
C5
C2
C6
R3
R4
MBB807
Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit.
List of components (see test circuit)
DESIGNATION
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C2, C3, C7, C8
multilayer ceramic
capacitor
10 nF
2222 590 08627
C1, C4, C6
multilayer ceramic
capacitor
1.2 pF
2222 851 12128
C5 (note 1)
miniature ceramic plate
capacitor
10 nF
2222 629 08103
L1 (note 1)
0.5 turns 0.4 mm copper
wire
L2
microstripline
75 Ω
length 14 mm; width 2.5 mm
L3
microstripline
75 Ω
length 8 mm; width 2.5 mm
L4, L5 (note 1)
1.5 turns 0.4 mm copper
wire
L6
microstripline
75 Ω
L7
Ferroxcube choke
5 µH
3122 108 20153
R1
metal film resistor
10 kΩ
2322 180 73103
R2 (note 1)
metal film resistor
220 Ω
2322 180 73221
R3, R4
metal film resistor
30 Ω
2322 180 73309
int. dia. 3 mm
int. dia. 3 mm;
winding pitch 1 mm
length 19 mm; width 2.5 mm
Notes
The circuit has been built on a double copper-clad printed circuit board with PTFE dielectric (εr = 2.2); thickness 1⁄16 inch;
thickness of copper sheet 2 × 35 µm.
1. Components C5, L1, L4, L5, and R2 are mounted on the underside of the PCB.
September 1995
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG97
handbook, full pagewidth
VBB
VCC
C3
C7
R1
C2
75 Ω
input
L1
C1
L7
R3
C8
L5
L2
L3
L6
C4
75 Ω
output
C6
R4
C5
R2
L4
MEA971
80 mm
handbook, full pagewidth
60 mm
MEA969
80 mm
handbook, full pagewidth
60 mm
mounting
screws
M 2.5 (8x)
MEA970
Fig.3 Intermodulation distortion and second order intermodulation distortion printed circuit board.
September 1995
5
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG97
MBB797
MBB774
1.2
120
handbook,
halfpage
P
handbook, halfpage
tot
(W)
h FE
1.0
0.8
80
0.6
0.4
40
0.2
0
0
0
50
100
150
200
( o C)
Ts
0
40
80
120
I C (mA)
VCE = 10 V; Tj = 25 °C.
Fig.4 Power derating curve.
Fig.5
MBB798
3
DC current gain as a function of collector
current.
MBB773
8
handbook, halfpage
handbook, halfpage
fT
(GHz)
C re
(pF)
6
2
4
1
2
0
0
0
10
VCE (V)
20
0
40
IE = 0; f = 1 MHz; Tj = 25 °C.
VCE = 10 V; f = 500 MHz; Tj = 25 °C.
Fig.6
Fig.7
Feedback capacitance as a function of
collector-emitter voltage.
September 1995
6
80
I C (mA)
120
Transition frequency as a function of
collector current.
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG97
MBB799
45
handbook, halfpage
d im
(dB)
d im
(dB)
50
50
55
55
60
60
65
65
70
20
MBB796
45
handbook, halfpage
40
60
80
70
20
100
120
I C (mA)
40
60
80
VCE = 10 V; Vo = 750 mV; f(p+q−r) = 443.25 MHz;
Tamb = 25 °C.
VCE = 10 V; Vo = 700 mV; f(p+q−r) = 793.25 MHz;
Tamb = 25 °C.
Fig.8
Fig.9
Intermodulation distortion as a function of
collector current.
MBB800
45
MBB801
handbook, halfpage
d2
(dB)
d2
(dB)
50
50
55
55
60
60
65
65
70
20
Intermodulation distortion as a function of
collector current.
45
handbook, halfpage
100
120
I C (mA)
40
60
80
70
20
100
120
I C (mA)
VCE = 10 V; Vo = 50 dBmV; f(p+q) = 450 MHz;
Tamb = 25 °C.
60
80
100
120
I C (mA)
VCE = 10 V; Vo = 50 dBmV; f(p+q) = 810 MHz;
Tamb = 25 °C.
Fig.10 Second order intermodulation distortion as
a function of collector current.
September 1995
40
Fig.11 Second order intermodulation distortion as
a function of collector current.
7
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG97
MEA963
60
MEA964
60
handbook,
Z halfpage
handbook,
Z halfpage
L
(Ω) 50
L
(Ω)
50
RL
RL
40
40
30
30
20
20
10
10
0
0
–10
XL
–20
0
0.25
0.50
0.75
–10
1
POUT (W)
XL
0
0.25
0.50
0.75
1
POUT (W)
VCE = 6 V; f = 900 MHz.
VCE = 7.5 V; f = 900 MHz.
Fig.12 Load impedance as a function of output
power.
Fig.13 Load impedance as a function of output
power.
MEA965
60
handbook,
Z halfpage
L
(Ω)
RL
50
40
30
20
10
0
–10
XL
0
0.25
0.50
0.75
1
POUT (W)
VCE = 10 V; f = 900 MHz.
Fig.14 Load impedance as a function of output
power.
September 1995
8
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG97
MEA957
MEA958
20
20
handbook, halfpage
handbook, halfpage
Zi
(Ω)
Zi
(Ω)
15
15
xi
10
10
ri
ri
xi
5
5
0
0
–5
0
0.25
0.50
0.75
–5
1
POUT (W)
0
0.25
0.50
0.75
1
POUT (W)
VCE = 6 V; f = 900 MHz.
VCE = 7.5 V; f = 900 MHz.
Fig.15 Input impedance as a function of output
power.
Fig.16 Input impedance as a function of output
power.
MEA959
20
handbook, halfpage
Zi
(Ω)
15
ri
10
xi
5
0
5
–10
0
0.25
0.50
0.75
1
POUT (W)
VCE = 10 V; f = 900 MHz.
Fig.17 Input impedance as a function of output
power.
September 1995
9
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG97
MEA961
MEA962
80
1.5
handbook, halfpage
handbook, halfpage
η
(%)
P OUT
(W)
70
V CE =
10 V
1
V CE = 6 V
60
7.5 V
6V
7.5 V
0.5
10 V
50
40
0
0.5
1
0
POUT (W) 1.5
0
100
200
300
P IN (mW)
f = 900 MHz.
f = 900 MHz.
Fig.18 Efficiency as a function of output power.
Fig.19 Output power as a function of input power.
MEA960
MBB802
10
50
handbook, halfpage
handbook, halfpage
G UM
Gp
(dB)
(dB)
40
8
V CE =
10 V
6
30
7.5 V
20
4
6V
10
2
0
0
0
0.5
1
POUT (W) 1.5
10
103
f (MHz)
104
IC = 70 mA; VCE = 10 V; Tamb = 25 °C.
f = 900 MHz.
Fig.20 Power gain as a function of output power.
September 1995
102
Fig.21 Maximum unilateral power gain as a
function of frequency.
10
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG97
50
handbook, full pagewidth
25
100
40 MHz
10
250
+j
10
0
25
50
100
250
–j
250
2 GHz
10
100
25
MBB803
50
IC = 70 mA; VCE = 10 V; Tamb = 25 °C.
Zo = 50 Ω.
Fig.22 Common emitter input reflection coefficient (S11).
90 o
handbook, full pagewidth
60 o
120 o
150 o
30 o
2 GHz
ϕ
100
180 o
80
60
40
20
0o
40 MHz
ϕ
30 o
150 o
60 o
120 o
90 o
MBB806
IC = 70 mA; VCE = 10 V; Tamb = 25 °C.
Fig.23 Common emitter forward transmission coefficient (S21).
September 1995
11
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG97
90 o
handbook, full pagewidth
60 o
120 o
150 o
30 o
2 GHz
ϕ
180 o
0.5
0.4
0.3
0.2
0.1
0o
40 MHz
ϕ
30 o
150 o
60 o
120 o
90 o
MBB805
IC = 70 mA; VCE = 10 V; Tamb = 25 °C.
Fig.24 Common emitter reverse transmission coefficient (S12).
50
handbook, full pagewidth
25
100
10
250
2 GHz
+j
0
10
25
50
100
250
–j
250
10
40 MHz
100
25
50
MBB804
IC = 70 mA; VCE = 10 V; Tamb = 25 °C.
Zo = 50 Ω.
Fig.25 Common emitter output reflection coefficient (S22).
September 1995
12
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG97
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
96-11-11
97-02-28
SOT223
September 1995
EUROPEAN
PROJECTION
13
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG97
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
14
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