datasheet for AOD488 by Alpha and Omega Semiconductor

datasheet for AOD488 by Alpha and Omega Semiconductor
AOD488
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD488 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
VDS (V) = 40V
ID = 20 A
(VGS = 10V)
RDS(ON) < 26 mΩ (VGS = 10V)
RDS(ON) < 39 mΩ (VGS = 4.5V)
-RoHS Compliant
-Halogen Free*
100% UIS Tested!
100% Rg Tested!
12343
5678
19ABCDEF
2
99BCDEF
42
42
1
43
3
41
43
41
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current
C
Avalanche Current C
Repetitive avalanche energy L=0.3mH
TC=25°C
Power Dissipation
B
TC=100°C
Power Dissipation
A
TA=70°C
C
B
V
ID
23
50
IAR
12
A
EAR
22
mJ
2
W
1.3
°C
-55 to 175
Symbol
Alpha & Omega Semiconductor, Ltd.
W
25
TJ, TSTG
t 1 10s
Steady-State
Steady-State
A
50
PDSM
Junction and Storage Temperature Range
Maximum Junction-to-Case
±20
IDM
PD
TA=25°C
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Units
V
20
TC=100°C
Pulsed Drain Current
Maximum
40
RθJA
RθJC
Typ
17.4
50
2.3
Max
30
60
3
Units
°C/W
°C/W
°C/W
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AOD488
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
ID=10mA, VGS=0V
Min
Typ
40
45
VDS=32V, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
50
TJ=55°C
VGS=10V, ID=20A
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=8A
5
0.1
uA
3
V
21.5
26
A
34
31
Forward Transconductance
VDS=5V, ID=20A
25
VSD
Diode Forward Voltage
IS=1A, VGS=0V
0.76
IS
Maximum Body-Diode Continuous Current
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
404
VGS=0V, VDS=20V, f=1MHz
µA
2.3
gFS
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Units
V
1
IDSS
RDS(ON)
Max
41
mΩ
39
mΩ
1
V
20
A
500
pF
S
95
pF
37
pF
2.7
4
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
9.2
12
nC
Qg(4.5V) Total Gate Charge
4.5
nC
1.6
nC
2.6
nC
3.5
ns
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=20V, ID=20A
VGS=10V, VDS=20V, RL=1.0Ω,
RGEN=3Ω
6
ns
13.2
ns
3.5
ns
IF=20A, dI/dt=100A/µs
22.9
ns
nC
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
18.3
A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RthJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev3: July 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD488
20
60
55
50
45
40
35
30
VDS=5V
8V
10V
15
5V
ID(A)
ID (A)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4.5V
25
20
15
10
5
0
4V
10
125°C
5
25°C
VGS=3.5V
0
0
1
2
3
4
2
5
2.5
50
3.5
4
Normalized On-Resistance
40
VGS=4.5V
35
30
25
20
VGS=10V
15
4.5
500
150
60
1.8
45
RDS(ON) (mΩ )
3
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=10V
ID=20A
1.6
1.4
VGS=4.5V
ID=8A
1.2
1
10
0
5
10
15
20
0.8
25
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+02
100
ID=20A
90
1.0E+01
80
125°C
1.0E+00
70
125°C
IS (A)
RDS(ON) (mΩ )
25
60
1.0E-01
50
1.0E-02
40
1.0E-03
30
25°C
1.0E-04
25°C
20
1.0E-05
10
0.0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOD488
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
700
10
Capacitance (pF)
VGS (Volts)
600
VDS=20V
ID=20A
8
6
4
Ciss
500
400
300
Coss
200
Crss
2
100
0
0
2
4
6
8
0
10
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
5
10
15
20
25
30
35
VDS (Volts)
Figure 8: Capacitance Characteristics
40
500
150
60
200
10µs
160
10.0
ID (Amps)
100µs
DC
1ms
1.0
10ms
TJ(Max)=175°C,
TA=25°C
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Zθ JC Normalized Transient
Thermal Resistance
TJ(Max)=175°C
Tc=25°C
120
80
40
0
0.0001
0.1
0.1
Power (W)
RDS(ON)
limited
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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AOD488
14
60
12
50
Power Dissipation (W)
ID(A), Peak Avalanche Current
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
6
4
TA=25°C
2
40
30
20
10
0
0.00001
0
0.0001
0.001
0
25
25
50
20
40
75
100
125
150
175
500
150
60
TA=25°C
15
10
30
20
10
5
0
0.001
0
0
25
50
75
100
125
150
175
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note B)
Zθ JA Normalized Transient
Thermal Resistance
50
TCASE (°C)
Figure 13: Power De-rating (Note B)
Power (W)
Current rating ID(A)
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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AOD488
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
Vgs
Vgs
+ Vdd
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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