CM50BU 24H
MITSUBISHI IGBT MODULES
CM50BU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
A
B
S(4 - Mounting
Holes)
F
E
H
G
E
R
L
M
GvP
EvP
GuP
EuP
C
TC Measured
Point
D
TC
Measured
Point
U
GvN
EuN
EvN
V
E
Description:
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of four
IGBTs in an H-Bridge configuration, with each transistor having a
reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system
assembly and thermal management.
L
H
N
K
F
V
P
Q
J
J
4 - M4 NUTS
GuN
W
G
TAB#110 t=0.5
V
T
U
X
P
GuP
EuP
U
GvP
EvP
V
GuN
EuN
GvN
EvN
Features:
ⵧ Low Drive Power
ⵧ Low VCE(sat)
ⵧ Discrete Super-Fast Recovery
Free-Wheel Diode
ⵧ High Frequency Operation
ⵧ Isolated Baseplate for Easy
Heat Sinking
N
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
Dimensions
Inches
Millimeters
72.0
M
0.74
18.7
55±0.25
N
0.02
0.5
91.0
P
1.55
39.3
Q
0.63
16.0
Applications:
ⵧ AC Motor Control
ⵧ Motion/Servo Control
ⵧ UPS
ⵧ Welding Power Supplies
A
2.83
B
2.17±0.01
C
3.58
D
2.91±0.01
E
0.43
11.0
R
0.57
F
0.79
20.0
S
0.22 Dia.
G
0.69
17.5
T
0.32
8.1
H
0.75
19.1
U
1.02
26.0
J
0.39
10.0
V
0.59
15.0
Type
Current Rating
Amperes
VCES
Volts (x 50)
K
0.41
10.5
W
0.20
5.0
CM
50
24
L
0.05
X
1.61
41.0
74.0±0.25
1.25
14.4
5.5 Dia.
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM50BU-24H is a
1200V (VCES), 50 Ampere FourIGBT Module.
Mar.2002
MITSUBISHI IGBT MODULES
CM50BU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Symbol
Ratings
Units
Junction Temperature
Tj
-40 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
VGES
±20
Volts
IC
50
Amperes
ICM
100*
Amperes
Collector Current (Tc = 25°C)
Peak Collector Current (Tj ≤ 150°C)
Emitter Current** (Tc = 25°C)
IE
50
Amperes
Peak Emitter Current**
IEM
100*
Amperes
Maximum Collector Dissipation (Tc = 25°C)
Pc
400
Watts
Mounting Torque, M4 Main Terminal
–
1.3 ~ 1.7
N·m
Mounting Torque, M5 Mounting
–
2.5 ~ 3.5
N·m
Weight
–
390
Grams
Viso
2500
Vrms
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Collector-Cutoff Current
Gate Leakage Voltage
Test Conditions
ICES
VCE = VCES, VGE = 0V
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th)
IC = 5mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat)
Min.
Typ.
Max.
–
–
1
Units
mA
–
–
0.5
µA
4.5
6
7.5
Volts
IC = 50A, VGE = 15V, Tj = 25°C
–
2.9
3.7
Volts
IC = 50A, VGE = 15V, Tj = 125°C
–
2.85
–
Volts
Total Gate Charge
QG
VCC = 600V, IC = 50A, VGE = 15V
–
187
Emitter-Collector Voltage*
VEC
IE = 50A, VGE = 0V
–
–
3.2
–
Typ.
Max.
nC
Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Input Capacitance
Cies
Output Capacitance
Coes
Test Conditions
Min.
Units
–
–
7.5
nF
VCE = 10V, VGE = 0V
–
–
2.6
nF
–
–
1.5
nF
VCC = 600V, IC = 50A,
–
–
80
ns
tr
VGE1 = VGE2 = 15V,
–
–
200
ns
td(off)
RG = 6.3Ω, Resistive
–
–
150
ns
Reverse Transfer Capacitance
Cres
Resistive
Turn-on Delay Time
td(on)
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
tf
Load Switching Operation
–
–
350
ns
Diode Reverse Recovery Time
trr
IE = 50A, diE/dt = -100A/µs
–
–
300
ns
Diode Reverse Recovery Charge
Qrr
IE = 50A, diE/dt = -100A/µs
–
0.28
–
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Thermal Resistance, Junction to Case
Rth(j-c)Q
Thermal Resistance, Junction to Case
Rth(j-c)D
Rth(c-f)
Per Module, Thermal Grease Applied
Contact Thermal Resistance
Test Conditions
Min.
Typ.
Max.
Units
Per IGBT 1/4 Module
–
–
0.31
°C/W
Per FWDi 1/4 Module
–
–
0.7
°C/W
–
0.025
–
°C/W
Mar.2002
MITSUBISHI IGBT MODULES
CM50BU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
100
15
12
VGE = 20V
80
11
60
10
40
9
20
8
0
2
4
6
8
60
40
20
4
8
12
16
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
4
3
2
1
0
20
IC = 50A
4
2
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, IE, (AMPERES)
IC = 100A
60
100
80
VGE = 0V
Tj = 25°C
8
40
CAPACITANCE VS. VCE
(TYPICAL)
102
Tj = 25°C
20
COLLECTOR-CURRENT, IC, (AMPERES)
102
6
VGE = 15V
Tj = 25°C
Tj = 125°C
0
0
10
10
101
101
Cies
100
Coes
Cres
10-1
IC = 20A
0
4
8
12
16
20
1.5
2.0
2.5
3.0
3.5
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
103
td(on)
tr
101
100
100
101
COLLECTOR CURRENT, IC, (AMPERES)
102
REVERSE RECOVERY TIME, trr, (ns)
td(off)
102
102
101
Irr
101
100
101
EMITTER CURRENT, IE, (AMPERES)
101
102
GATE CHARGE, VGE
102
trr
100
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
di/dt = -100A/µsec
Tj = 25°C
tf
VCC = 600V
VGE = ±15V
RG = 6.3 Ω
Tj = 125°C
10-2
10-1
4.0
100
102
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
100
1.0
0
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
80
0
0
SWITCHING TIME, (ns)
5
VCE = 10V
Tj = 25°C
Tj = 125°C
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
Tj = 25oC
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
100
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
IC = 50A
15
VCC = 400V
VCC = 600V
10
5
0
0
50
100
150
200
250
GATE CHARGE, QG, (nC)
Mar.2002
MITSUBISHI IGBT MODULES
CM50BU-24H
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
( IGBT)
10-3
101
100
10-2
10-1
100
101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.31°C/W
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
10-3
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Zth = Rth • (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Zth = Rth • (NORMALIZED VALUE)
HIGH POWER SWITCHING USE
INSULATED TYPE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10-3
101
100
10-2
10-1
100
101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.7°C/W
10-1
10-1
10-2
10-2
10-3
10-5
10-4
10-3
10-3
TIME, (s)
Mar.2002
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