RJK4002DJE Data Sheet
Preliminary Datasheet
RJK4002DJE
400V - 3A - MOS FET
High Speed Power Switching
R07DS0842EJ0200
Rev.2.00
Aug 03, 2012
Features
 Low on-state resistance
RDS(on) = 2.4  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)
 High speed switching
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
D
1. Source
2. Drain
3. Gate
G
32
S
1
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to ambient thermal Impedance
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
Symbol
VDSS
VGSS
ID Note1
ID(pulse) Note4
IDR Note1
IDR(pulse) Note4
IAPNote3
EARNote3
Note 2
Pch
ch-a
Tch
Tstg
Value
400
30
3
6
3
6
2.5
0.357
Unit
V
V
A
A
A
A
A
mJ
2.54
49.2
150
–55 to +150
W
C/W
C
C
Limited by Tch max.
Value at Tc = 25C
STch = 25C, Tch  150C
Pulse width limited by safe operating area.
R07DS0842EJ0200 Rev.2.00
Aug 03, 2012
Page 1 of 6
RJK4002DJE
Preliminary
Electrical Characteristics
(Ta = 25C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note:
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
trr
Min
400
—
—
3.5
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
2.4
165
25
2.6
11
12
23
20
6.0
1.2
3.4
0.9
200
Max
—
1
0.1
4.5
2.9
—
—
—
—
—
—
—
—
—
—
1.5
—
Unit
V
A
A
V

pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test Conditions
ID = 10 mA, VGS = 0
VDS = 400 V, VGS = 0
VGS = 30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 1.5 A, VGS = 10 V Note 5
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 1.5 A
VGS = 10 V
RL = 133 
Rg = 10 
VDD = 320 V
VDS = 100 V
ID = 3 A
IF = 3 A, VGS = 0 Note 5
IF = 3 A, VGS = 0
diF/dt = 100 A/s
5. Pulse test
6. Since this device is equipped with high voltage FET chip (VDSS 400 V), high voltage may be supplied.
Therefore, please be sure to confirm about electric discharge between drain terminal and other terminal.
7. This device is sensitive to electrostatic discharge.
It is recommended to adopt appropriate cautions when handling this product.
R07DS0842EJ0200 Rev.2.00
Aug 03, 2012
Page 2 of 6
RJK4002DJE
Preliminary
Main Characteristics
Typical Output Characteristics
Maximum Safe Operation Area
5
100
10
PW
=
Drain Current
1
0.1
10
0
ID (A)
10
μs
μs
Operation in this
area is limited by
RDS(on)
0.01
0.001
0.1
Tc = 25°C
1 shot
1
100
10
Drain to Source Voltage
−25°C
0.01
0.001
6
Static Drain to Source on State Resistance
RDS(on) (Ω)
Gate to Source Voltage
5.6 V
2
5.4 V
5.2 V
VGS = 5 V
1
8
12
16
20
VDS (V)
1
VGS = 10 V
Ta = 25°C
Pulse Test
0.1
0.1
1
Drain Current
VGS (V)
10
ID (A)
Body-Drain Diode Reverse
Recovery Time (Typical)
10
1000
VGS = 10 V
Ta = 25°C
Pulse Test
6
ID = 3 A
4
1.5 A
2
0
−25
8
10
Static Drain to Source on State Resistance
vs. Temperature (Typical)
8
4
Drain to Source Voltage
Drain to Source on State Resistance
RDS(on) (Ω)
25°C
4
5.8 V
0
0
25
50
75
Case Temperature
R07DS0842EJ0200 Rev.2.00
Aug 03, 2012
100 125 150
Tc (°C)
Reverse Recovery Time trr (ns)
ID (A)
Drain Current
1
2
6V
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
VDS = 10 V
Pulse Test
0
10 V
VDS (V)
10
Tc = 75°C
7V
4
0
1000
Typical Transfer Characteristics
0.1
6.2 V
6.4 V
3
Drain Current
ID (A)
Ta = 25°C
Pulse Test
100
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
10
0.1
1
Reverse Drain Current
10
IDR (A)
Page 3 of 6
RJK4002DJE
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Ciss
100
Coss
10
Crss
Tc = 25°C
1
0
40
80
120
Drain to Source Voltage
160
200
800
600
400
12
200
4
VDD = 320 V
200 V
100 V
0
0
0
2
VDS (V)
4
6
Gate Charge
8
10
Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
5.0
VGS = 0
Ta = 25°C
Pulse Test
4
Gate to Source Cutoff Voltage
VGS(off) (V)
IDR (A)
VDD = 100 V
200 V 8
320 V
VDS
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Reverse Drain Current
16
VGS
ID = 3 A
Ta = 25°C
Gate to Source Voltage
Capacitance C (pF)
VGS = 0
f = 1 MHz
Drain to Source Voltage
VDS (V)
1000
VGS (V)
Dynamic Input Characteristics (Typical)
3
2
1
0
0
0.4
0.8
1.2
Source to Drain Voltage
R07DS0842EJ0200 Rev.2.00
Aug 03, 2012
1.6
2.0
VSD (V)
4.5
ID = 10 mA
4.0
3.5
1 mA
3.0
0.1 mA
2.5
VDS = 10 V
2.0
-25
0
25
50
75
Case Temperature
100 125 150
Tc (°C)
Page 4 of 6
RJK4002DJE
Preliminary
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
1
D=1
0.5
0.2
0.1
0.1
0.05
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 49.2°C/W, Tc = 25°C
0.02
0.01
0.01
o
1sh
t pu
lse
PDM
D=
PW
T
PW
T
0.001
10 μ
100 μ
1m
10 m
Pulse Width
100 m
1
10
100
PW (s)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
10 Ω
Vin
10 V
Vin
Vout
10%
10%
10%
VDD
= 200 V
90%
td(on)
R07DS0842EJ0200 Rev.2.00
Aug 03, 2012
tr
90%
td(off)
tf
Page 5 of 6
RJK4002DJE
Preliminary
Package Dimensions
Package Name
TO-92 Mod
JEITA Package Code
SC-51
RENESAS Code
PRSS0003DC-A
Previous Code
TO-92 Mod / TO-92 ModV
MASS[Typ.]
0.35g
4.8 ± 0.4
Unit: mm
2.3 Max
0.65 ± 0.1
0.75 Max
0.7
0.60 Max
0.55 Max
10.1 Min
8.0 ± 0.5
3.8 ± 0.4
0.5 Max
1.27
2.54
Ordering Information
Orderable Part No.
RJK4002DJE-00#Z0
Note:
Quantity
Shipping Container
Hold Box, Radial Taping
2500 pcs
Leads is forming applied as following figure.
Unit: mm
18.0
9.0
19.0
16.0
28.0 max.
12.7
2.5 2.5
6.35
12.7
R07DS0842EJ0200 Rev.2.00
Aug 03, 2012
4.0
Page 6 of 6
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