AOTF12T60 600V,12A N-Channel MOSFET General Description

AOTF12T60 600V,12A N-Channel MOSFET  General Description
AOTF12T60
600V,12A N-Channel MOSFET
General Description
Product Summary
• Latest Trench Power AlphaMOS-II technology
• Low RDS(ON)
• Low Ciss and Crss
• High Current Capability
• RoHS and Halogen Free Compliant
VDS @ Tj,max
700V
IDM
48A
RDS(ON),max
< 0.52Ω
Applications
Qg,typ
33nC
Eoss @ 400V
4.5µJ
100% UIS Tested
100% Rg Tested
• General Lighting for LED and CCFL
• AC/DC Power supplies for Industrial, Consumer, and
Telecom
Top View
TO-220F
D
G
AOTF12T60
G
D
S
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOTF12T60
AOTF12T60L
TO-220F Pb Free
TO-220F Green
Tube
Tube
1000
1000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
AOTF12T60
Symbol
Drain-Source Voltage
VDS
VGS
Gate-Source Voltage
Continuous Drain
Current
TC=25°C
TC=100°C
AOTF12T60L
600
±30
V
12*
ID
Units
V
12*
9*
9*
A
Pulsed Drain Current C
IDM
48
Avalanche Current C,J
IAR
12
A
Repetitive avalanche energy C,J
EAR
72
mJ
607
50
5
mJ
Single pulsed avalanche energy G
EAS
MOSFET dv/dt ruggedness
dv/dt
Peak diode recovery dv/dt
TC=25°C
PD
Power Dissipation B
Derate above 25oC
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
TL
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Symbol
RθJA
Maximum Junction-to-Ambient A,D
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev.2.0 October 2013
V/ns
50
35
W
0.4
0.3
-55 to 150
W/ oC
°C
300
°C
AOTF12T60
AOTF12T60L
Units
65
2.5
65
3.6
°C/W
°C/W
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Page 1 of 6
AOTF12T60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
600
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C
700
V
ID=250µA, VGS=0V
0.55
V/ oC
VDS=600V, VGS=0V
1
VDS=480V, TJ=125°C
10
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=6A
gFS
Forward Transconductance
VDS=40V, ID=6A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
ISM
4
5
nΑ
V
0.42
0.52
Ω
1
V
Maximum Body-Diode Continuous Current
12
A
Maximum Body-Diode Pulsed Current C
48
A
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related H
Crss
Effective output capacitance, time
related I
Reverse Transfer Capacitance
Rg
Gate resistance
Co(tr)
±100
µA
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
13
0.73
S
1954
pF
76
pF
52
pF
97
pF
VGS=0V, VDS=100V, f=1MHz
13
pF
f=1MHz
3.6
Ω
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
Qgs
3
33
VGS=10V, VDS=480V, ID=12A
50
nC
10
nC
9.5
nC
45
ns
VGS=10V, VDS=300V, ID=12A,
RG=25Ω
68
ns
76
ns
46
ns
IF=12A,dI/dt=100A/µs,VDS=100V
566
Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V
7.4
ns
µC
Body Diode Reverse Recovery Time
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=4.5A, VDD=150V, RG=25Ω, Starting TJ=25°C.
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. L=1.0mH, VDD=150V, RG=25Ω, Starting TJ=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0 October 2013
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Page 2 of 6
AOTF12T60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
25
-55°C
10V
7V
VDS=40V
20
10
6.5V
10
6V
ID(A)
ID (A)
15
125°C
1
5
25°C
VGS=5.5V
0
0
5
10
15
20
25
0.1
30
2
VDS (Volts)
Fig 1: On-Region Characteristics
6
8
10
VGS(Volts)
Figure 2: Transfer Characteristics
1.0
Normalized On-Resistance
3
0.8
RDS(ON) (Ω)
4
VGS=10V
0.6
0.4
0.2
5
10
15
20
VGS=10V
ID=6A
2
1.5
1
0.5
0
-100
0.0
0
2.5
25
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1E+02
1.2
40
125°C
1E+00
IS (A)
BVDSS (Normalized)
1E+01
1.1
1
1E-01
25°C
1E-02
0.9
1E-03
0.8
-100
1E-04
-50
0
50
100
150
200
TJ (°C)
Figure 5:Break Down vs. Junction Temperature
Rev.2.0 October 2013
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOTF12T60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
1000
Capacitance (pF)
VGS (Volts)
Ciss
VDS=480V
ID=12A
12
9
6
Coss
100
Crss
10
3
1
0
0
12
24
36
48
0.1
60
1
10
100
1000
VDS (Volts)
Figure 8: Capacitance Characteristics
10
15
8
12
Current rating ID(A)
Eoss(uJ)
Qg (nC)
Figure 7: Gate-Charge Characteristics
6
Eoss
4
2
9
6
3
0
0
0
100
200
300
400
500
0
600
25
50
75
100
125
VDS (Volts)
Figure 9: Coss stored Energy
100
100
10µs
10µs
RDS(ON)
limited
10
RDS(ON)
limited
10
100µs
1ms
1
10ms
DC
100µs
ID (Amps)
ID (Amps)
150
TCASE (°C)
Figure 10: Current De-rating (Note B)
1ms
1
10ms
DC
0.1s
0.1
0.1s
0.1
1s
TJ(Max)=150°C
TC=25°C
1s
TJ(Max)=150°C
TC=25°C
0.01
0.01
1
10
100
1000
VDS (Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOTF12T60 (Note F)
Rev.2.0 October 2013
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1
10
100
1000
VDS (Volts)
Figure 12: Maximum Forward Biased Safe
Operating Area for AOTF12T60L (Note F)
Page 4 of 6
AOTF12T60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF12T60 (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3.6°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF12T60L (Note F)
Rev.2.0 October 2013
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Page 5 of 6
AOTF12T60
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.2.0 October 2013
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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Page 6 of 6
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