RJP65S03DWA/RJP65S03DWS Datasheet (650V-30A

RJP65S03DWA/RJP65S03DWS Datasheet (650V-30A
Datasheet
RJP65S03DWA / RJP65S03DWS
650V - 30A - IGBT
Application: Inverter
R07DS0820EJ0400
Rev.4.00
Nov. 06, 2015
Features
 Low collector to emitter saturation voltage
VCE(sat) = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Tc = 25C)
 High speed Switching
 Short circuit withstands time (10 s min.)
Outline
Die: RJP65S03DWT-80
Wafer: RJP65S03DWA-80
2
C
2
3
1G
E
3
1. Gate
2. Collector (The back)
3. Emitter
1
3
Absolute Maximum Ratings
( Tc = 25°C unless otherwise noted )
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Junction temperature
Symbol
VCES
VGES
IC
IC
Tj
Ratings
650
±30
60
30
175 Note1
Unit
V
V
A
A
C
Notes: 1. Please use this device in the thermal conditions where the junction temperature does not exceed 175C.
IGBT Application Note is disclosed about reliability test and application condition up to Tj = 175C.
R07DS0820EJ0400 Rev.4.00
Nov. 06, 2015
Page 1 of 3
RJP65S03DWA / RJP65S03DWS
Electrical Characteristics (Datas below are measured values on a package configuration.)
(Tc = 25°C unless otherwise noted)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Switching time Note3
Short circuit withstand time Note4
Symbol
ICES
IGES
VGE(off)
VCE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Min
—
—
5.0
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
1.50
2800
130
90
140
30
75
20
20
170
100
Max
1
±1
6.8
1.80
—
—
—
—
—
—
—
—
—
—
Unit
A
A
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Test Conditions
VCE = 650 V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10 V, IC = 0.6mA
IC = 30 A, VGE = 15 V Note2
tsc
10
—
—
s
VCC  360 V , VGE = 15 V
Tc = 150 C
VCE = 25 V
VGE = 0
f = 1 MHz
VGE = 15 V
VCE = 300 V
IC = 30 A
VCC = 300 V
IC = 30 A
VGE =±15 V
Rg = 10 , Tc = 150 C
Inductive load
Notes: 2. Pulse test.
3. Switching time test circuit and waveform are shown below.
4. Verified by design.
Switching Time Test Circuit
Waveform
VGE
90%
Diode clamp
10%
L
VCC
IC
90%
D.U.T
90%
Rg
10%
td(off)
R07DS0820EJ0400 Rev.4.00
Nov. 06, 2015
tf
10%
td(on)
tr
Page 2 of 3
RJP65S03DWA / RJP65S03DWS
Die Dimension
0.81
1.56
2.19
Emitter bonding pad (1)
Emitter bonding pad (2)
1.56
Gate
bonding pad
1.13
4.9
1.13
1.31
3.55
Unit: mm
4.9
Note 1.
Definition
Illustration
Part of white
Al pattern
Part of dotted line
Bonding area
Part of gray
Final passivation
Note 2.
The back of the chip is processed with Au evaporation.
Note 3.
Recognition, target and any other patterns which are not related to
Diode operation, may be changed without notice.
Ordering Information
Orderable Part Number
RJP65S03DWA-80#W0
RJP65S03DWS-80#W0
R07DS0820EJ0400 Rev.4.00
Nov. 06, 2015
Shipment form
Unsawn wafer
Sawn wafer
Page 3 of 3
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