Phison Electronics Corporation TLC microSD 3.0 Memory Card Specification

Phison Electronics Corporation TLC microSD 3.0 Memory Card Specification
Phison Electronics Corporation
TLC microSD 3.0 Memory Card
Specification
(UHS-I)
Version 1.9
Document Number: S-14346
No.1, Qun-Yi Road, Jhunan, Miaoli County, Taiwan 350, R.O.C
Tel: +886-37-586-896
Fax: +886-37-587-868
E-mail : sales@phison.com /
suppport@phison.com
ALL RIGHTS ARE STRICTLY RESERVED. ANY PORTION OF THIS PAPER SHALL NOT BE REPRODUCED, COPIED,
OR TRANSLATED TO ANY OTHER FORMS WITHOUT PERMISSION FROM PHISON ELECTRONICS
CORPORATION.
TLC microSD Card (UHS-I)
Revision History
Revision
History
Draft Date
Remark
1.0
First release
2013/12/23
Yvonne
1.1
Add new configuration
2014/04/03
Lucas
1.2
Modify temperature range
2014/04/08
Lucas
1.3
Modify configuration & Modify power consumption
2014/05/19
Lucas
1.4
Modify power consumption
2014/05/21
Lucas
1.5
Add note in Temperature and Humidity
2014/05/22
Lucas
1.6
Modify absolute maximum rating
2014/06/03
Lucas
1.7
Add new configuration
2014/06/26
Lucas
1.8
1. Modify performance overview
2014/07/17
Lucas
2014/07/24
Lucas
2. Add Table 4-2
1.9
1. Modify performance overview
2. Add note in card capacitance for each signal pin
3. Add note in tIH of SDR50 and SDR104 input timing
TLC microSD Card (UHS-I)
Overview




Flash Type
■ Toshiba 19nm TLC
■ Toshiba A19nm TLC
Bus Speed Mode
■ UHS-I
Speed Class
■
Class 2/4/6/10
Power Consumption Note
■
Power Up Current < 250uA

Advanced Flash Management
■
Static and Dynamic Wear Leveling
■
Bad Block Management

Write Protect with mechanical switch


Supply Voltage 2.7 ~ 3.6V
Temperature Range
■
Operation: 0°C ~ 70°C
■
Storage: -25°C ~ 85°C
RoHS compliant
Standby Current < 1000uA
■
Read Current < 400mA
■
Write Current < 400mA
CPRM (Content Protection for Recordable

EMI compliant
■


Media)
NOTE: Please see Chapter 5.1 Power Consumption for details.
TLC microSD Card (UHS-I)
Performance Overview
Capacity
Class
UHS-I
Controller
Flash
HDBenchWINXP
TestMetrix Test
(Bit-per-cell: TLC)
(@1000MB) Kbytes
Test 500MB
Density
Process
Read
Write
Read
Write
(KB/s)
(KB/s)
(MB/s)
(MB/s)
4GB
CL4
UHS-I
PS8035
32Gb*1
19nm
25,323
5,016
30.00
5.39
8GB
CL4
UHS-I
PS8035
64Gb*1
A19nm
28,864
4,823
30.13
5.19
16GB
CL10
PS8035
64Gb*2
A19nm
43,325
10,512
45.09
13.46
32GB
CL10
PS8035
64Gb*4
A19nm
41,888
13,000
45.55
13.75
64GB
CL10
PS8035
64Gb*8
A19nm
41,126
14,201
43.13
15.36
4GB
CL4
UHS-I
PS8037
32Gb*1
19nm
42,265
5,039
46.00
5.40
8GB
CL4
UHS-I
PS8037
64Gb*1
19nm
41,967
5,248
45.97
5.66
8GB
CL4
UHS-I
PS8037
64Gb*1
A19nm
43,325
4,839
46.00
5.26
16GB
CL4
UHS-I
PS8037
64Gb*2
A19nm
44.772
4.795
46.01
5.17
16GB
CL10
PS8210
64Gb*2
A19nm
79,367
12,234
83.73
13.34
32GB
CL10
PS8210
64Gb*4
A19nm
79,657
18,223
82.44
21.66
64GB
CL10
PS8210
64Gb*8
A19nm
78,515
19,914
87.05
22.04
UHS-I
(Grade 1)
UHS-I
(Grade 1)
UHS-I
(Grade 1)
UHS-I
(Grade 1)
UHS-I
(Grade 1)
UHS-I
(Grade 1)
TLC microSD Card (UHS-I)
Table of Contents
1.
Introduction ................................................................................................ 1
1.1.
General Description ......................................................................................................... 1
1.2.
1.2.1.
1.2.2.
1.2.3.
Flash Management ........................................................................................................... 1
Error Correction Code (ECC) .............................................................................. 1
Wear Leveling ...................................................................................................... 1
Bad Block Management ....................................................................................... 2
2.
Product Specifications................................................................................. 3
3.
Environmental Specifications ..................................................................... 4
3.1.
Environmental Conditions ............................................................................................... 4
4.
SD Card Comparison ................................................................................... 7
5.
Electrical Specifications .............................................................................. 8
5.1.
Power Consumption ......................................................................................................... 8
5.2.
Absolute Maximum Rating .............................................................................................. 9
5.3.
5.3.1.
5.3.2.
5.3.3.
DC Characteristic ............................................................................................................. 9
Bus Operation Conditions for 3.3V Signaling ..................................................... 9
Bus Signal Line Load ......................................................................................... 10
Power Up Time .................................................................................................. 11
5.4.
5.4.1.
5.4.2.
5.4.3.
5.4.4.
AC Characteristic ........................................................................................................... 12
microSD Interface Timing (Default) .................................................................. 12
microSD Interface Timing (High-Speed Mode) ................................................ 13
SD Interface Timing (SDR12, SDR25, SDR50 and SDR104 Modes) .............. 14
microSD Interface Timing (DDR50 Mode) ....................................................... 16
6.
6.1.
7.
Interface.................................................................................................... 18
Pad Assignment and Descriptions.................................................................................. 18
Physical Dimension ................................................................................... 20
TLC microSD Card (UHS-I)
List of Tables
Table 3-1 High Temperature Test Condition ......................................................................................... 4
Table 3-2 Low Temperature Test Condition.......................................................................................... 4
Table 3-3 High Humidity Test Condition ............................................................................................... 4
Table 3-4 Temperature Cycle Test ........................................................................................................ 5
Table 3-5 Shock Specification ............................................................................................................... 5
Table 3-6 Vibration Specification ......................................................................................................... 5
Table 3-7 Drop Specification ................................................................................................................ 5
Table 3-8 Bending Specification ........................................................................................................... 5
Table 3-9 Torque Specification ............................................................................................................. 5
Table 3-10 Contact ESD Specification ................................................................................................... 6
Table 4-1 Comparing SD3.0 Standard, SD3.0 SDHC and SD3.0 SDXC ................................................... 7
Table 4-2 Comparing UHS Speed Grade Symbols ................................................................................ 7
Table 5-1 Power Consumption of microSD card .................................................................................. 8
Table 5-2 Threshold Level for High Voltage Range ............................................................................... 9
Table 5-3 Peak Voltage and Leakage Current ....................................................................................... 9
Table 5-4 Threshold Level for 1.8V Signaling ..................................................................................... 10
Table 5-5 Input Leakage Current for 1.8V Signaling ........................................................................... 10
Table 5-6 Clock Signal Timing ............................................................................................................. 14
Table 5-7 Output Timing of Fixed Data Window (SDR12, SDR25, SDR50 and SDR104 Modes) ......... 15
Table 5-8 Output Timing of Variable Window (SDR104) .................................................................... 16
Table 5-9 Bus Timings – Parameters Values (DDR50 Mode) .............................................................. 17
Table 6-1 microSD Memory Card Pad Assignment ............................................................................ 18
TLC microSD Card (UHS-I)
1. INTRODUCTION
1.1. General Description
The Micro Secure Digital (microSD) card version 3.0 is fully compliant with the standards released by the SD
Card Association. The Command List supports [Part 1 Physical Layer Specification Ver3.01 Final] definitions.
Card capacities of non-secure area and secure area support [Part 3 Security Specification Ver3.0 Final]
Specifications.
The microSD 3.0 card comes with an 8-pin interface, designed to operate at a maximum frequency of
208MHz. It can alternate communication protocol between the SD mode and SPI mode. It performs data
error detection and correction with very low power consumption. The Card capacity could be more than
64GB and up to 2TB in the future with ex-FAT file system, which is called SDXC (Extended Capacity SD
Memory Card).
Micro Secure Digital 3.0 cards are one of the most popular cards today due to its high performance, good
reliability and wide compatibility.
1.2. Flash Management
1.2.1. Error Correction Code (ECC)
Flash memory cells will deteriorate with use, which might generate random bit errors in the stored data.
Thus, microSD card applies the BCH ECC Algorithm, which can detect and correct errors occur during Read
process, ensure data been read correctly, as well as protect data from corruption.
1.2.2. Wear Leveling
NAND Flash devices can only undergo a limited number of program/erase cycles, and in most cases, the
flash media are not used evenly. If some area get updated more frequently than others, the lifetime of the
device would be reduced significantly. Thus, Wear Leveling technique is applied to extend the lifespan of
NAND Flash by evenly distributing write and erase cycles across the media.
Phison provides advanced Wear Leveling algorithm, which can efficiently spread out the flash usage through
the whole flash media area. Moreover, by implementing both dynamic and static Wear Leveling algorithms,
the life expectancy of the NAND Flash is greatly improved.
1
TLC microSD Card (UHS-I)
1.2.3. Bad Block Management
Bad blocks are blocks that include one or more invalid bits, and their reliability is not guaranteed. Blocks
that are identified and marked as bad by the manufacturer are referred to as “Initial Bad Blocks”. Bad blocks
that are developed during the lifespan of the flash are named “Later Bad Blocks”. Phison implements an
efficient bad block management algorithm to detect the factory-produced bad blocks and manages any bad
blocks that appear with use. This practice further prevents data being stored into bad blocks and improves
the data reliability.
2
TLC microSD Card (UHS-I)
2. PRODUCT SPECIFICATIONS

Support SD system specification version 3.0

Card capacity of non-secure area and secure area support [Part 3 Security Specification
Ver3.0 Final] Specifications

Support SD SPI mode

Designed for read-only and read/write cards

Bus Speed Mode (use 4 parallel data lines)
■
■
Non-UHS Mode

Default speed mode: 3.3V signaling, frequency up to 25MHz, up to 12.5 MB/sec

High speed mode: 3.3V signaling, frequency up to 50MHz, up to 25 MB/sec
UHS Mode

SDR12: SDR up to 25MHz, 1.8V signaling

SDR25: SDR up to 50MHz, 1.8V signaling

SDR50: 1.8V signaling, frequency up to 100MHz, up to 50 MB/sec

SDR104: 1.8V signaling, frequency up to 208MHz, up to 104MB/sec

DDR50: 1.8V signaling, frequency up to 50MHz, sampled on both clock edges, up to 50
MB/sec
NOTES: 1. Timing in 1.8V signaling is different from that of 3.3V signaling.
2. To properly run the UHS mode, please ensure the device supports UHS-I mode.

The command list supports [Part 1 Physical Layer Specification Ver3.1 Final] definitions

Copyrights Protection Mechanism
■
Compliant with the highest security of CPRM standard

Support CPRM (Content Protection for Recordable Media) of SD Card

Card removal during read operation will never harm the content

Password Protection of cards (optional)

Write Protect feature using mechanical switch

Built-in write protection features (permanent and temporary)

+4KV/-4KV ESD protection in contact pads

Operation voltage range: 2.7 ~ 3.6V

Support Dynamic and Static Wear Leveling

Dimension: 15mm (L) x 11mm (W) x 1mm (H)
3
TLC microSD Card (UHS-I)
3. ENVIRONMENTAL SPECIFICATIONS
3.1. Environmental Conditions
Temperature and Humidity

Temperature Range (NOTE)
■ Operational: 0°C ~ 70°C
■ Storage: -25°C ~ 85°C
NOTE: we suggest that customer use SD/micro SD card during the temperature range for better
reliability.

Humidity
■ Operational: RH = 93% under 25°C
■ Diamond grade: RH = 93% under 40°C
Table 3-1 High Temperature Test Condition
Temperature
Humidity
Test Time
Operation
85°C
0% RH
96 hours
Storage
85°C
0% RH
500 hours
Result: No any abnormality is detected.
Table 3-2 Low Temperature Test Condition
Temperature
Humidity
Test Time
Operation
-25°C
0% RH
96 hours
Storage
-40°C
0% RH
168 hours
Result: No any abnormality is detected.
Table 3-3 High Humidity Test Condition
Temperature
Humidity
Test Time
Operation
25°C
95% RH
1 hour
Storage
40°C
93% RH
500 hours
Result: No any abnormality is detected.
4
TLC microSD Card (UHS-I)
Table 3-4 Temperature Cycle Test
Operation
Storage
Temperature
Test Time
-25°C
30 min
85°C
30 min
-40°C
30 min
85°C
30 min
Cycle
10 Cycles
10 Cycles
Result: No any abnormality is detected.
Shock
Table 3-5 Shock Specification
Acceleration Force
Half Sin Pulse Duration
500G
2ms
microSD card
Result: No any abnormality is detected when power on.
Vibration
Table 3-6 Vibration Specification
Condition
microSD card
Frequency/Displacement
Frequency/Acceleration
20Hz~80Hz/1.52mm
80Hz~2000Hz/20G
Vibration Orientation
X, Y, Z axis/30 min for each
Result: No any abnormality is detected when power on.
Drop
Table 3-7 Drop Specification
microSD card
Height of Drop
Number of Drop
150cm free fall
6 face of each unit
Result: No any abnormality is detected when power on.
Bending
Table 3-8 Bending Specification
microSD card
Force
Action
≥ 10N
Hold 1min/5 times
Result: No any abnormality is detected when power on.
Torque
Table 3-9 Torque Specification
Force
microSD card
0.1N-m or +/-2.5 deg
Action
Hold 30 seconds/5 times
Result: No any abnormality is detected when power on.
5
TLC microSD Card (UHS-I)
Electrostatic Discharge (ESD)
Table 3-10 Contact ESD Specification
Condition
microSD card
Contact: +/- 4KV each item 5 times
Air: +/- 15KV 5 times
Result
PASS
EMI Compliance

FCC: CISPR22

CE: EN55022

BSMI 13438
6
TLC microSD Card (UHS-I)
4. SD CARD COMPARISON
Table 4-1 Comparing SD3.0 Standard, SD3.0 SDHC and SD3.0 SDXC
HCS/CCS bits of ACMD41
CMD8 (SEND_IF_COND)
SD3.0 SDSC
(Backward
compatible to 2.0
host)
FAT 12/16
Byte
(1 byte unit)
Support
Support
CMD16 (SET_BLOCKLEN)
Support
Partial Read
Lock/Unlock Function
Write Protect Groups
Supply Voltage 2.7v – 3.6v
(for operation)
Total Bus Capacitance for each
signal line
CSD Version
(CSD_STRUCTURE Value)
Support
Mandatory
Optional
FAT32
Block
(512 byte unit)
Support
Support
Support
(Only CMD42)
Not Support
Mandatory
Not Support
Support
Support
Support
40pF
40pF
40pF
1.0 (0x0)
2.0 (0x1)
2.0 (0x1)
Speed Class
Optional
Mandatory
(Class 2 / 4 / 6 / 10)
Mandatory
(Class 2 / 4 / 6 / 10)
File System
Addressing Mode
SD3.0 SDHC
(Backward compatible
to 2.0 host)
SD3.0 SDXC
exFAT
Block
(512 byte unit)
Support
Support
Support
(Only CMD42)
Not Support
Mandatory
Not Support
Table 4-2 Comparing UHS Speed Grade Symbols
Operable Under
SD Memory Card
Mark
U1 ( UHS Speed Grade 1)
U3 ( UHS Speed Grade 3)
*UHS-I Bus I/F, UHS-II Bus I/F
SDHC UHS-I and UHS-II, SDXC UHS-I and UHS-II
Performance
10 MB/s minimum write speed
30 MB/s minimum write speed
Applications
Full higher potential of recording real-time
broadcasts and capturing large-size HD
videos.
Capable of recording 4K2K
video.
*UHS (Ultra High Speed), the fastest performance category available today, defines bus-interface speeds up
to 312 Megabytes per second for greater device performance. It is available on SDXC and SDHC memory
cards and devices.
7
TLC microSD Card (UHS-I)
5. ELECTRICAL SPECIFICATIONS
5.1. Power Consumption
The table below is the power consumption of microSD card with different flash memory types.
Table 5-1 Power Consumption of microSD card
Max. Power Up
Max. Standby
Max. Read
Max. Write
Current (uA)
Current (uA)
Current (mA)
Current (mA)
Default Speed Mode
250
1000
150 @ 3.6V
150 @ 3.6V
High Speed Mode
250
1000
200 @ 3.6V
200 @ 3.6V
UHS50/DDR50
250
1000
400 @ 3.6V
400 @ 3.6V
UHS104
250
1000
400 @ 3.6V
400 @ 3.6V
Flash Mode
UHS-I Mode
NOTES:
1.
Power consumptions are measured at room temperature.
2.
Power consumption of Max. Standby Current is for microSD cards under and including 64GB only. For 128GB
and 256GB, the power consumption is to be determined.
8
TLC microSD Card (UHS-I)
5.2. Absolute Maximum Rating
Item
Symbol
Parameter
MIN
MAX
Unit
1
Ta
Operating Temperature
0
+70
℃
2
Tst
Storage Temperature
-25
+85
℃
Parameter
Symbol
Min
MAX
Unit
Operating Temperature
Ta
0
+70
℃
VDD Voltage
VDD
2.7
3.6
V
5.3. DC Characteristic
5.3.1. Bus Operation Conditions for 3.3V Signaling
Table 5-2 Threshold Level for High Voltage Range
Parameter
Symbol
Min.
Max
Unit
Supply Voltage
VDD
2.7
3.6
V
Output High Voltage
VOH
0.75*VDD
Output Low Voltage
VOL
Input High Voltage
VIH
Input Low Voltage
VIL
Condition
V
IOH=-2mA VDD Min
0.125*VDD
V
IOL=2mA VDD Min
0.625*VDD
VDD+0.3
V
VSS-0.3
0.25*VDD
V
250
ms
Power Up Time
From 0V to VDD min
Table 5-3 Peak Voltage and Leakage Current
Parameter
Peak voltage on all lines
Symbol
Min
Max.
Unit
-0.3
VDD+0.3
V
10
uA
10
uA
Remarks
All Inputs
Input Leakage Current
-10
All Outputs
Output Leakage Current
-10
9
TLC microSD Card (UHS-I)
Table 5-4 Threshold Level for 1.8V Signaling
Parameter
Symbol
Min.
Max
Unit
Condition
Supply Voltage
VDD
2.7
3.6
V
Regulator Voltage
VDDIO
1.7
1.95
V
Generated by VDD
Output High Voltage
VOH
1.4
-
V
IOH=-2mA
Output Low Voltage
VOL
-
0.45
V
IOL=2mA
Input High Voltage
VIH
1.27
2.00
V
Input Low Voltage
VIL
Vss-0.3
0.58
V
Table 5-5 Input Leakage Current for 1.8V Signaling
Parameter
Symbol
Min
Max.
Unit
-2
2
uA
Input Leakage Current
Remarks
DAT3 pull-up is
disconnected.
5.3.2. Bus Signal Line Load
Bus Operation Conditions – Signal Line’s Load
Total Bus Capacitance = CHOST + CBUS + N CCARD
Parameter
Pull-up resistance
Total bus capacitance for each signal
line
Card Capacitance for each signal pin
symbol
RCMD
RDAT
Min
Max
Unit
Remark
10
100
kΩ
to prevent bus floating
1 card
CL
40
pF
CHOST+CBUS shall
not exceed 30 pF
CCARD
Maximum signal line inductance
Pull-up resistance inside card (pin1)
RDAT3
Capacity Connected to Power Line
CC
10
101
pF
16
nH
90
kΩ
5
uF
May be used for card
detection
To prevent inrush current
<Note 1> PS8210 is SD and eMMC(4.51) controller, so the maximum of eMMC capacitance will be 12pF.
10
TLC microSD Card (UHS-I)
5.3.3. Power Up Time
Host needs to keep power line level less than 0.5V and more than 1ms before power ramp up.
Power On or Power Cycle
Followings are requirements for Power on and Power cycle to assure a reliable SD Card hard reset.
(1) Voltage level shall be below 0.5V.
(2) Duration shall be at least 1ms.
Power Supply Ramp Up
The power ramp up time is defined from 0.5V threshold level up to the operating supply voltage which is
stable between VDD (min.) and VDD (max.) and host can supply SDCLK.
Followings are recommendations of Power ramp up:
(1) Voltage of power ramp up should be monotonic as much as possible.
(2) The minimum ramp up time should be 0.1ms.
(3) The maximum ramp up time should be 35ms for 2.7-3.6V power supply.
(4) Host shall wait until VDD is stable.
(5) After 1ms VDD stable time, host provides at least 74 clocks before issuing the first command.
Power Down and Power Cycle
(1) When the host shuts down the power, the card VDD shall be lowered to less than 0.5Volt for a minimum
period of 1ms. During power down, DAT, CMD, and CLK should be disconnected or driven to logical 0 by
the host to avoid a situation that the operating current is drawn through the signal lines.
(2) If the host needs to change the operating voltage, a power cycle is required. Power cycle means the
power is turned off and supplied again. Power cycle is also needed for accessing cards that are already
in Inactive State. To create a power cycle the host shall follow the power down description before
power up the card (i.e. the card VDD shall be once lowered to less than 0.5Volt for a minimum period of
1ms).
11
TLC microSD Card (UHS-I)
5.4. AC Characteristic
5.4.1. microSD Interface Timing (Default)
Parameter
Symbol
Min
Max
Unit
Clock CLK (All values are referred to min(VIH) and max(VIL)
Clock frequency Data Transfer
fPP
0
25
MHz
Mode
Clock frequency Identification
fOD
400
kHz
0(1)/100
Mode
Clock low time
tWL
10
ns
Clock high time
tWH
10
ns
Clock rise time
tTLH
10
ns
Clock fall time
tTHL
10
ns
Remark
Ccard≤ 10 pF
(1 card)
Ccard≤ 10 pF
(1 card)
Ccard≤ 10 pF
(1 card)
Ccard≤ 10 pF
(1 card)
Ccard≤ 10 pF
(1 card)
Ccard≤ 10 pF
(1 card)
12
TLC microSD Card (UHS-I)
Inputs CMD, DAT (referenced to CLK)
Input set-up time
tISU
5
ns
Input hold time
tIH
5
ns
Outputs CMD, DAT (referenced to CLK)
Output Delay time during Data
tODLY
0
14
Transfer Mode
Output Delay time during
tODLY
0
50
Identification Mode
ns
ns
Ccard≤ 10 pF
(1 card)
Ccard≤ 10 pF
(1 card)
CL≤40 pF
(1 card)
CL≤40 pF
(1 card)
(1) 0Hz means to stop the clock. The given minimum frequency range is for cases where continuous
clock is required.
5.4.2. microSD Interface Timing (High-Speed Mode)
Parameter
Symbol
Min
Max
Unit
Clock CLK (All values are referred to min(VIH) and max(VIL)
Clock frequency Data Transfer
fPP
0
50
MHz
Mode
Clock low time
tWL
7
ns
Clock high time
tWH
7
ns
Clock rise time
tTLH
3
ns
Clock fall time
tTHL
3
ns
Inputs CMD, DAT (referenced to CLK)
tISU
6
ns
Input set-up time
Remark
Ccard ≤ 10 pF
(1 card)
Ccard ≤ 10 pF
(1 card)
Ccard ≤ 10 pF
(1 card)
Ccard ≤ 10 pF
(1 card)
Ccard ≤ 10 pF
(1 card)
Ccard ≤ 10 pF
13
TLC microSD Card (UHS-I)
Input hold time
tIH
2
ns
Outputs CMD, DAT (referenced to CLK)
Output Delay time during Data
tODLY
14
Transfer Mode
Output Hold time
TOH
Total System capacitance of each
line¹
CL
2.5
ns
ns
40
pF
(1 card)
Ccard ≤ 10 pF
(1 card)
CL ≤ 40 pF
(1 card)
CL ≤ 15 pF
(1 card)
CL ≤ 15 pF
(1 card)
(1) In order to satisfy severe timing, the host shall drive only one card.
5.4.3. SD Interface Timing (SDR12, SDR25, SDR50 and SDR104 Modes)
Input
Table 5-6 Clock Signal Timing
Symbol
tCLK
tCR, tCF
Clock Duty
Min
4.80
30
Max
0.2* tCLK
70
Unit
ns
ns
%
Remark
208MHz (Max.), Between rising edge, VCT= 0.975V
tCR, tCF < 2.00ns (max.) at 100MHz, CCARD=10pF
14
TLC microSD Card (UHS-I)
SDR50 and SDR104 Input Timing
Symbol
Min
Max
Unit
SDR104 Mode
tIS
1.40
ns
CCARD =10pF, VCT= 0.975V
1
tIH
0.80
ns
CCARD = 5pF, VCT= 0.975V
Symbol
Min
Max
Unit
SDR50 Mode
tIS
3.00
ns
CCARD =10pF, VCT= 0.975V
tIH
0.801
ns
CCARD = 5pF, VCT= 0.975V
<Note 1> PS8210 is SD and eMMC(4.51) controller, so the maximum CCARD becomes 12pF and minimum
of tIH will be 1.10 ns.
Output(SDR12, SDR25, SDR50 and SDR104 Modes)
Table 5-7 Output Timing of Fixed Data Window (SDR12, SDR25, SDR50 and SDR104 Modes)
Symbol
tODLY
Min
-
tODLY
-
TOH
1.5
Max
7.5
Unit
ns
14
ns
-
ns
Remark
tCLK>=10.0ns, CL=30pF, using driver Type B, for SDR50
tCLK>=20.0ns, CL=40pF, using driver Type B, for SDR25 and
SDR12,
Hold time at the tODLY (min.), CL=15pF
15
TLC microSD Card (UHS-I)
Output(SDR12, SDR25 and SDR50)
Table 5-8 Output Timing of Variable Window (SDR104)
Symbol
tOP
△ tOP
tODW
Min
0
-350
0.60
Max
2
+1550
-
Unit
Ul
ps
Ul
Remark
Card Output Phase
Delay variable due to temperature change after tuning
tODW = 2.88ns at 208MHz
5.4.4. microSD Interface Timing (DDR50 Mode)
Symbol
Min
Max
Unit
Remark
tCLK
20
-
ns
50MHz (Max.), Between rising edge
tCR, tCF
-
0.2* tCLK
ns
tCR, tCF < 4.00ns (max.) at 50MHz, CCARD=10pF
Clock Duty
45
55
%
16
TLC microSD Card (UHS-I)
Table 5-9 Bus Timings – Parameters Values (DDR50 Mode)
Parameter
Symbol
Min
Max
Input CMD (referenced to CLK rising edge)
Unit
Input set-up time
tISU
6
-
ns
Input hold time
tIH
0.8
-
ns
Output CMD (referenced to CLK rising edge)
Output Delay time during Data
tODLY
13.7
Transfer Mode
Output Hold time
TOH
1.5
-
ns
ns
Remark
Ccard≤ 10 pF
(1 card)
Ccard≤ 10 pF
(1 card)
CL≤30 pF
(1 card)
CL≥15 pF
(1 card)
Inputs DAT (referenced to CLK rising and falling edges)
Input set-up time
tISU2x
3
-
ns
Input hold time
tIH2x
0.8
-
ns
Outputs DAT (referenced to CLK rising and falling edges)
Output Delay time during Data
tODLY2x
7.0
ns
Transfer Mode
Output Hold time
TOH2x
1.5
-
ns
Ccard≤ 10 pF
(1 card)
Ccard≤ 10 pF
(1 card)
CL≤25 pF
(1 card)
CL≥15 pF
(1 card)
17
TLC microSD Card (UHS-I)
6. INTERFACE
6.1. Pad Assignment and Descriptions
Table 6-1 microSD Memory Card Pad Assignment
pin
SD Mode
1
SPI Mode
Name
Type
Description
Name
Type
Description
1
DAT2
I/O/PP
Data Line [bit2]
RSV
2
CD/DAT3 2
I/O/PP 3
CS
I3
Chip Select (net true)
3
CMD
PP
Command/Response
DI
I
Data In
4
VDD
S
Supply voltage
VDD
S
Supply voltage
5
CLK
I
Clock
SCLK
I
Clock
6
VSS
S
Supply voltage ground
VSS
S
Supply voltage ground
7
DAT0
I/O/PP
Data Line [bit0]
DO
O/PP
Data Out
8
DAT1
I/O/PP
Data Line [bit1]
RSV
Card Detect/
Data Line [bit3]
(1) S: power supply, I: input; O: output using push-pull drivers; PP: I/O using push-pull drivers.
(2) The extended DAT lines (DAT1-DAT3) are input on power up. They start to operate as DAT lines after
SET_BUS_WIDTH command. The Host shall keep its own DAT1-DAT3 lines in input mode as well while
they are not used. It is defined so in order to keep compatibility to MultiMedia Cards.
(3) At power up, this line has a 50KOhm pull up enabled in the card. This resistor serves two functions:
Card detection and Mode Selection. For Mode Selection, the host can drive the line high or let it be
pulled high to select SD mode. If the host wants to select SPI mode, it should drive the line low. For
Card detection, the host detects that the line is pulled high. This pull-up should be disconnected by the
user during regular data transfer with SET_CLR_CARD_DETECT (ACMD42) command.
18
TLC microSD Card (UHS-I)
Name
Width
CID
128bit
RCA1
16bit
DSR
16bit
CSD
128bit
SCR
64bit
OCR
32bit
SSR
512bit
OCR
32bit
Description
Card identification number; card individual number for identification.
Mandatory
Relative card address; local system address of a card, dynamically suggested
by the card and approved by the host during initialization. Mandatory
Driver Stage Register; to configure the card’s output drivers. Optional
Card Specific Data; information about the card operation conditions.
Mandatory
SD Configuration Register; information about the SD Memory Card's Special
Features capabilities Mandatory
Operation conditions register. Mandatory.
SD Status; information about the card proprietary features
Mandatory
Card Status; information about the card status
Mandatory
(1) RCA register is not used (or available) in SPI mode.
19
TLC microSD Card (UHS-I)
7. PHYSICAL DIMENSION
Dimension: 15mm(L) x 11mm(W) x 1mm(H)
20
TLC microSD Card (UHS-I)
21
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
4D Systems:
uSD-4GB
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