1MBI900VXA-120PC-54*
http://www.fujielectric.com/products/semiconductor/
1MBI900VXA-120PC-54
IGBT Modules
IGBT MODULE (V series)
1200V / 900A / 1 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
NPC 3-level Inverter
Inverter DB for Motor Drive
AC and DC Servo Drive Amplifier (DB)
Active PFC
Industrial machines
Maximum Ratings and Characteristics
Maximum Ratings (at TC =25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Collector current for IGBT and Inverse Diode
Collector Power Dissipation
Reverse voltage for FWD
Forword current for FWD
Junction temperature
Operating junction temperature
(under switching conditions)
Case temperature
Storage temperature
between terminal and copper base (*1)
Isolation voltage
between thermistor and others (*2)
Mounting
Screw Torque
Main Terminals
(*3)
Sense Terminals
Symbols
VCES
VGES
Conditions
IC
Continuous
IC pulse
-IC
-IC pulse
PC
VR
IF
IF pulse
Tj
1ms
1ms
1 device
Continuous
1ms
TC =25°C
TC =100°C
Maximum ratings
1200
±20
1200
900
1800
120
240
5100
1200
900
1800
175
Tjop
150
TC
Tstg
150
-40 ~ +150
Units
V
V
A
W
V
A
°C
Viso
AC : 1min.
4000
VAC
-
M5
M8
M4
6.0
10.0
2.1
Nm
Note *1: All terminals should be connected together during the test.
Note *2:Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3:Recommendable Value : Mounting
3.0 ~ 6.0 Nm (M5)
Recommendable Value : Main Terminals
8.0 ~ 10.0 Nm (M8)
Recommendable Value : Sense Terminals 1.8 ~ 2.1 Nm (M4)
1
8248
JUNE 2015
1MBI900VXA-120PC-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj = 25°C unless otherwise specified)
Items
Conditions
Zero gate voltage collector current
ICES
VCE = 1200V
VGE = 0V
-
-
8.0
mA
Gate-Emitter leakage current
IGES
VCE = 0V
VGE=±20V
-
-
1600
nA
Gate-Emitter threshold voltage
VGE(th)
VCE = 20V
IC = 900mA
6.0
6.5
7.0
V
-
1.75
2.10
2.15
1.65
2.00
2.05
1.19
83
1100
500
150
1200
150
1.70
1.80
1.75
1.65
1.75
1.70
1.70
1.80
1.75
1.60
1.70
1.65
200
5000
495
3375
2.20
2.10
2.15
2.10
8.0
2.15
2.05
520
3450
IGBT/Inverse Diode
VCE(sat)
(terminal) (*4)
Collector-Emitter saturation voltage
VCE(sat)
(chip)
Internal gate resistance
Input capacitance
Turn-on time
Turn-off time
RG (int)
Cies
ton
tr
tr (i)
toff
tf
VCC = 600V
IC = 900A
VGE = ±15V
RG = 1.6 Ω
LS = 70nH
Forward on voltage
VF
(chip)
FWD
Reverse Current
IR
VF
(chip)
Reverse recovery time
trr
Resistance
R
B value
B
IF = 120A
VGE=0V
Tj = 25°C
Tj =125°C
Tj =150°C
Tj = 25°C
Tj =125°C
Tj =150°C
VCE = 1200V
VF
(terminal) (*4)
Forward on voltage
IC = 900A
VGE=15V
Tj = 25°C
Tj =125°C
Tj =150°C
Tj = 25°C
Tj =125°C
Tj =150°C
VCE=10V, VGE=0V,f=1MHz
VF
(terminal) (*4)
Thermistor
Characteristics
min.
typ.
max.
Symbols
IF = 900A
VGE=0V
IF = 900A
T = 25°C
T = 100°C
T = 25/50°C
Tj = 25°C
Tj =125°C
Tj =150°C
Tj = 25°C
Tj =125°C
Tj =150°C
-
465
3305
Units
V
Ω
nF
nsec
V
mA
V
nsec
Ω
K
Note *4: Please refer to page 8, there is definition of on-state voltage at terminal.
Thermal resistance characteristics
Items
Symbols
Thermal resistance (1device)
Rth(j-c)
Contact thermal resistance (1device) (*5)
Rth(c-f)
Conditions
Inverter IGBT
Inverse Diode
FWD
with Thermal Compound
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
Characteristics
min.
typ.
max.
0.030
0.250
0.033
0.00625
Units
°C/W
1MBI900VXA-120PC-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
2000
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
2000
15V
VGE=20V
12V
12V
Collector current: IC [A]
1500
Collector current: IC [A]
15V
VGE= 20V
10V
1000
500
1500
10V
1000
500
8V
8V
0
1
2
3
4
0
5
0
Collector-Emitter voltage: VCE [V]
Collector-Emitter Voltage: VCE [V]
Collector Current: IC [A]
150˚C
1000
500
0
1
2
3
6
4
0
4
IC=1800A
IC= 900A
IC= 450A
2
5
10
20
800
20.00
Gate-Emitter voltage: VGE [V]
15.00
Cies
10
Cres
Coes
0
5
10
15
20
25
25
Dynamic Gate Charge (typ.)
VCC=600V, IC=900A, Tj= 25°C
1000
Gate Capacitance: Cies, Coes, Cres [nF]
***
15
Gate-Emitter Voltage: VGE [V]
Gate Capacitance vs. Collector-Emitter Voltage (typ.)
VGE= 0V, ƒ= 1MHz, Tj= 25°C
100
5
8
Collector-Emitter Voltage: VCE [V]
1
4
10
1500
0
3
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25°C / chip
125˚C
Tj=25 ˚C
2
Collector-Emitter voltage: VCE [V]
Collector current vs. Collector-Emitter voltage (typ.)
VGE= 15V / chip
2000
1
600
10.00
400
5.00
200
0
0.00
VGE
-5.00
-200
-10.00
-400
-15.00
-600
-20.00
-10000
30
VCE
-5000
0
5000
Gate charge: Qg [nC]
Collector-Emitter voltage: VCE [V]
3
Collector-Emitter voltage: VCE [V]
0
-800
10000
1MBI900VXA-120PC-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching time vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=1.6Ω, Tj=25°C
Switching time vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=1.6Ω, Tj=125°C, 150°C
10000
toff
Switching time: ton, tr, toff, tf [nsec]
Switching time: ton, tr, toff, tf [nsec]
10000
1000
ton
tr
100
10
tf
0
500
1000
1500
2000
toff
1000
ton
tr
100
tf
Tj=125 oC
Tj=150 oC
10
0
500
Collector current: IC [A]
Switching loss: Eon, Eoff, Err [mJ/pulse]
Switching time: ton, tr, toff, tf [nsec]
600
toff
1000
tr
tf
Tj=125 oC
Tj=150 oC
10
0.1
1
10
Tj=125 oC
Tj=150 oC
500
400
Eoff
300
Eon
200
Err
100
0
0
1000
1500
2000
Reverse bias safe operating area (max.)
+VGE=15V, -VGE=15V, RG=1.6Ω, Tj=150°C
Switching loss vs. Gate resistance (typ.)
VCC=600V, IC=900A, VGE=±15V, Tj=125°C, 150°C
2000
500
450
1800
Tj=125 oC
Tj=150 oC
400
1600
350
300
Collector current: IC [A]
Switching loss: Eon, Eoff, Err [mJ/pulse]
500
Collector current: IC [A]
Gate resistance: RG [ Ω]
Eoff
250
Eon
200
150
Err
100
50
0
2000
Switching loss vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=1.6Ω, Tj=125°C, 150°C
10000
100
1500
Collector current: IC [A]
Switching time vs. Gate resistance (typ.)
VCC=600V, IC=900A, VGE=±15V, Tj=125°C, 150°C
ton
1000
1400
1200
1000
Notice)
Please refer to page 8.
There is definision of VCE.
800
600
400
200
0
1
0
10
Gate resistance: RG [ Ω]
0
500
1000
Collector-Emitter voltage: VCE [V]
4
1500
1MBI900VXA-120PC-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[FWD]
Forward Current vs. Forward Voltage (typ.)
chip
[FWD]
Reverse Recovery Characteristics (typ.)
VCC=600V, VGE=±15V, RG=1.6Ω, Tj=25°C
10000
Tj=25 ˚C
1500
Reverse recovery current: Irr [A]
Reverse recovery time: trr [nsec]
Forward current: IF [A]
2000
1000
125˚C
500
150˚C
0
0
1
2
1000
trr
100
10
3
Irr
0
Reverse Recovery Characteristics (typ.)
VCC=600V, VGE=±15V, RG=1.6Ω, Tj=125°C, 150°C
300
Tj=125 oC
Tj=150 oC
250
Irr
1000
Forward current: IF [A]
Reverse recovery current: Irr [A]
Reverse recovery time: trr [nsec]
2000
Forward Current vs. Forward Voltage (typ.)
chip
10000
trr
100
Tj=25 °C
200
150
125°C
100
150°C
50
0
500
1000
1500
0
2000
Forward current: IF [A]
Tj=150°C
2000
1500
Pmax=900kW
1000
Notice)
Please refer to page 8.
There is definision of VCE.
500
0
200
0.0
1.0
2.0
Forward on voltage: VF [V]
[FWD]
FWD safe operating area (max.)
Reverse recovery current: Irr [A]
1500
[Inverse Diode]
[FWD]
0
1000
Forward current: IF [A]
Forward on voltage: VF [V]
10
500
400
600
800 1000 1200 1400
Collector-Emitter voltage: VCE [V]
5
3.0
1MBI900VXA-120PC-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[THERMISTOR]
Temperature characteristic (typ.)
Transient Thermal Resistance (max.)
100
Inverse Diode
0.1
FWD
Resistance : R [kΩ]
Thermal resistanse: Rth(j-c) [˚C/W]
1
IGBT
0.01
0.001
T
Rth
〔°C/W〕
0.0001
0.001
〔sec〕
IGBT
FWD
Inverse Diode
0.01
0.0023
0.00322
0.00354
0.02682
0.0301
0.00816
0.00897
0.06799
0.0598
0.01153
0.01268
0.09604
0.1
0.0708
0.00710
0.00781
0.05915
10
1
0.1
1
-60 -40 -20
Pulse Width : PW [sec]
0
20
40
60
80
100 120 140 160
Temperature [˚C]
Outline Drawings, mm
LABEL2 VCE(sat),VF
classification
LABEL1
LABEL2
Weight:850g(typ.)
6
1MBI900VXA-120PC-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Equivalent Circuit Schematic
[ Thermistor ]
Main C1 (9)
Sense C1 (5)
[ IGBT ]
[ Inverse Diode ]
G1 (4)
TH1(7)
TH2(6)
Sense C2E1 (3)
Main C2E1 (8)
NC
[ FWD ]
G2 (1)
Sense E2 (2)
Main E2 (10)
Notice) There is recommendation of wiring for NC terminal as follows
Fuji recommends wire connection of CASE1 or CASE2 to fix NC terminal voltage.
Case1
Case2
Main C1
Main C1
Sense C1
G1
Main C2E1
Sense C1
G1
Gate
Driver
Main C2E1
Sense C2E1
NC G2
Gate
Driver
Sense E2
Gate
Driver
Sense C2E1
NC G2
Sense E2
Main E2
Main E2
NC terminal (G2) and sense E2 should be
connected by Gate-Driver.
NC terminal (G2) and sense E2 should be
connected by wire.
7
1MBI900VXA-120PC-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Definition of on-state voltage at terminal and switching characteristics
Main C1
Fuji defined VCE value of terminal by using
Sense C1 and Sense C2E1 for Upper arm and
Sense C2E1 and Sense E2 for Lower arm .
Sense C1
G1
VCE (terminal)
of Upper arm
Switching characteristics of VCE also is defined
between Sense C1 and Sense C2E1 for Upper arm and
Sense C2E1 and Sense E2 for Lower arm .
Sense C2E1
Main C2E1
NC
G2
Please use these terminals whenever
measure spike voltage and on-state voltage .
VCE (terminal)
of Lower arm
Sense E2
Main E2
WARNING
1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of June 2015.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specifications.
2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property rights which may arise from the use of the applications described herein.
3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, flame retardant, and free of malfunction.
4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.
• Computers
• OA equipment
• Communications equipment (terminal devices)
• Measurement equipment
• Machine tools
• Audiovisual equipment • Electrical home appliances
• Personal equipment • Industrial robots etc.
5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,
it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment
becomes faulty.
• Transportation equipment (mounted on cars and ships)
• Trunk communications equipment
• Traffic-signal control equipment
• Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices
• Safety devices
• Medical equipment
6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment
(without limitation).
• Space equipment
• Aeronautic equipment
• Nuclear control equipment
• Submarine repeater equipment
7.Copyright ©1996-2015 by Fuji Electric Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.
8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions
set forth herein.
8
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