DATA SHEET Triacs and Diacs

DATA SHEET Triacs and Diacs
DATA SHEET
Triacs and Diacs
Order code
47-3412
Manufacturer code
DB3
Description
DB3 32V DIAC DO-35 (ST)
Triacs and Diacs
The enclosed information is believed to be correct, Information may change ‘without notice’ due to
product improvement. Users should ensure that the product is suitable for their use. E. & O. E.
Sales: 01206 751166
Sales@rapidelec.co.uk
Technical: 01206 835555
Tech@rapidelec.co.uk
Page 1 of 5
Revision A
04/07/2003
Fax: 01206 7551188
www.rapidelectronics.co.uk
DB3 /DB4 / DC34

TRIGGER DIODES
FEATURES
VBO : 32V / 34V / 40V VERSIONS
LOW BREAKOVER CURRENT
DESCRIPTION
DO 35
(Glass)
High reliability glass passivation insuring
parameter stability and protection against
junction contamination.
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
P
Power dissipation on printed circuit
(L = 10 mm)
Ta = 65 °C
150
mW
ITRM
Repetitive peak on-state current
tp = 20 µs
F= 100 Hz
2
A
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 125
- 40 to + 125
°C
°C
Value
Unit
THERMAL RESISTANCES
Symbol
Parameter
Rth (j-a)
Junction to ambient
400
°C/W
Rth (j-l)
Junction-leads
150
°C/W
April 1995
1/4
DB3 / DB4 / DC34
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
VBO
Parameter
Test Conditions
Breakover voltage *
Value
C = 22nF **
see diagram 1
Unit
DB3
DC34
DB4
MIN
28
30
35
TYP
32
34
40
MAX
36
38
45
V
[I+VBOI-I-VBOI]
Breakover voltage
symmetry
C = 22nF **
see diagram 1
MAX
±3
V
I∆V± I
Dynamic breakover
voltage *
∆I = [IBO to IF=10mA]
see diagram 1
MIN
5
V
see diagram 2
MIN
5
V
C = 22nF **
MAX
see diagram 3
TYP
1.5
µs
VB = 0.5 VBO max
see diagram 1
MAX
10
µA
VO
Output voltage *
IBO
Breakover current *
tr
Rise time *
IB
Leakage current *
100
50
µA
100
* Electrical characteristic applicable in both forward and reverse directions.
** Connected in parallel with the devices.
DIAGRAM 1 : Current-voltage characteristics
DIAGRAM 2 : Test circuit for output voltage
10 k
500 k
220 V
50 Hz
+ IF
D.U.T
VO
0.1 F
10mA
-V
IBO
IB
DIAGRAM 3 : Test circuit see diagram 2.
Adjust R for lp=0.5A
+ V
0,5 VBO
V
lp
90 %
VBO
- IF
10 %
tr
2/4

R = 20
DB3 / DB4 / DC34
Fig.1 : Power dissipation versus ambient temperature (maximum values)
Fig.2 : Relative variation of VBO versus junction
temperature (typical values)
VBO[Tj]
o
VBO[Tj=25 C]
P (mW)
160
1.08
140
120
1.06
100
80
1.04
60
40
1.02
o
20
0
Tj( C)
o
Tamb ( C)
o
0
10 20 30 40 50 60 70 80 90 100 110 120 130
1.00
25
50
75
100
125
Fig.3 : Peak pulse current versus pulse duration
(maximum values)
I TRM (A)
2
F = 100 Hz
o
Tj initial = 25 C
1
0.1
tp ( s)
0.01
10
100
1000
10000
3/4

DB3 / DB4 / DC34
PACKAGE MECHANICAL DATA (in millimeters)
DO 35 Glass
B
A
B
note 1 E
/C
O
E note 1
/D
O
O
/D
note 2
REF.
DIMENSIONS
Millimeters
NOTES
Inches
Min.
Max.
Min.
Max.
A
3.050
4.500
0.120
0.117
B
12.7
∅C
1.530
2.000
0.060
0.079
∅D
0.458
0.558
0.018
0.022
E
0.500
1.27
1 - The lead diameter ∅ D is not controlled over zone E
2 - The minimum axial lengh within which the device may be
placed with its leads bent at right angles is 0.59”(15 mm)
0.050
Cooling method by convection and conduction
Marking : type number
Weight : 0.15 g
Polarity : N A
Stud torque : N A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
 1995 SGS-THOMSON Microelectronics - All rights reserved.
2
Purchase of I C Components by SGS-THOMSON Microelectronics, conveys a license under the Philips
I2C Patent. Rights to use these components in an I2C system, is granted provided that the system conforms to
the I2C Standard Specifications as defined by Philips.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
4/4

Was this manual useful for you? yes no
Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Download PDF

advertising