BLF244 DATA SHEET

BLF244 DATA SHEET
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF244
VHF power MOS transistor
Product specification
September 1992
Philips Semiconductors
Product specification
VHF power MOS transistor
FEATURES
BLF244
PIN CONFIGURATION
• High power gain
• Low noise figure
• Easy power control
• Good thermal stability
k, halfpage
1
4
• Withstands full load mismatch
• Gold metallization ensures
excellent reliability.
d
g
MBB072
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range.
The transistor is encapsulated in a
4-lead SOT123 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
Matched gate-source voltage (VGS)
groups are available on request.
2
s
3
MSB057
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
PINNING - SOT123
PIN
DESCRIPTION
1
drain
2
source
3
gate
4
source
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION
CW, class-B
September 1992
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
175
28
15
> 13
> 50
2
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF244
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
65
V
±VGS
gate-source voltage
−
20
V
ID
DC drain current
−
3
A
Ptot
total power dissipation
−
38
W
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
200
°C
up to Tmb = 25 °C
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-mb
thermal resistance from
junction to mounting base
Tmb = 25 °C; Ptot = 38 W
4.6 K/W
Rth mb-h
thermal resistance from
mounting base to heatsink
Tmb = 25 °C; Ptot = 38 W
0.3 K/W
MRA919
10
MGP151
50
handbook, halfpage
handbook, halfpage
Ptot
(W)
40
ID
(A)
(1)
30
(1)
(2)
(2)
1
20
10
10−1
1
10
VDS (V)
0
102
0
(1) Current is this area may be limited by RDS(on).
(2) Tmb = 25 °C.
100
Th (°C)
150
(1) Short-time operation during mismatch.
(2) Continuous operation.
Fig.2 DC SOAR.
September 1992
50
Fig.3 Power/temperature derating curves.
3
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF244
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
VGS = 0; ID = 5 mA
65
−
−
V
V(BR)DSS
drain-source breakdown voltage
IDSS
drain-source leakage current
VGS = 0; VDS = 28 V
−
−
1
mA
IGSS
gate-source leakage current
±VGS = 20 V; VDS = 0
−
−
1
µA
VGS(th)
gate-source threshold voltage
ID = 5 mA; VDS = 10 V
2
−
4.5
V
∆VGS
gate-source voltage difference of
matched devices
ID = 5 mA; VDS = 10 V
−
−
100
mV
gfs
forward transconductance
ID = 0.75 A; VDS = 10 V
0.6
−
−
S
RDS(on)
drain-source on-state resistance
ID = 0.75 A; VGS = 10 V
−
0.8
1.5
Ω
IDSX
on-state drain current
VGS = 10 V; VDS = 10 V
−
5
−
A
Cis
input capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
60
−
pF
Cos
output capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
40
−
pF
Crs
feedback capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
4.5
−
pF
F
noise figure (see Fig. 13)
ID = 0.5 A; VDS = 28 V; R1 = 23 Ω;
Th = 25 °C; f = 175 MHz;
Rth mb-h = 0.3 K/W
−
4.3
−
dB
MGP152
MGP153
6
2
handbook, halfpage
handbook, halfpage
T.C.
(mV/K)
ID
(A)
0
4
−2
−4
2
−6
−8
0
1
10
102
ID (mA)
0
103
4
VDS = 10 V; valid for Tj = 25 to 125 °C.
VDS = 10 V.
solid line: Tj = 25 °C.
dotted line: Tj = 125 °C.
Fig.4
Fig.5
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
September 1992
4
8
12
VGS (V)
16
Drain current as a function of gate-source
voltage, typical values.
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF244
MGP154
2
MGP155
160
handbook, halfpage
handbook, halfpage
C
(pF)
RDS(on)
(Ω)
120
1
80
Cis
Cos
40
0
0
0
40
80
120
Tj (°C)
160
0
Drain-source on-state resistance as a
function of junction temperature, typical
values.
Fig.7
MGP156
20
handbook, halfpage
Crs
(pF)
10
0
0
20
VDS (V)
40
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of
drain-source voltage, typical values.
September 1992
20
30
VDS (V)
40
VGS = 0; f = 1 MHz.
VGS = 10 V; ID = 0.75 A.
Fig.6
10
5
Input and output capacitance as functions
of drain-source voltage, typical values.
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF244
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th = 25 °C; Rth mb-h = 3 K/W; unless otherwise specified.
RF performance in CW operation in a common source class-B circuit.
MODE OF OPERATION
CW, class-B
f
(MHz)
VDS
(V)
175
28
25
175
12.5
25
Zi
(Ω)
(note 1)
GP
(dB)
ηD
(%)
15
> 13
typ. 17
> 50
typ. 65
3.0 − j4.0
6.3 + j9.8
46.4//46.4
6
typ. 15
typ. 60
3.0 − j4.0
4.5 + j3.3
100
IDQ
PL
(mA) (W)
ZL
(Ω)
R1
(Ω)
Note
1. R1 included.
Ruggedness in class-B operation
The BLF244 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases under
the following conditions:
Th = 25 °C; Rth mb-h = 0.3 K/W; at rated load power.
MGP157
30
MGP158
20
handbook, halfpage
handbook, halfpage
PL
(W)
Gp
(dB)
Gp
100
ηD
(%)
ηD
20
10
10
0
1
PIN (W)
50
0
2
0
10
20
PL (W)
0
30
Class-B operation; VDS = 28 V; IDQ = 25 mA;
f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W.
Class-B operation; VDS = 28 V; IDQ = 25 mA;
f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W.
Fig.9
Fig.10 Power gain and efficiency as functions of
load power, typical values.
Load power as a function of input power,
typical values.
September 1992
6
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF244
MGP159
20
MGP160
20
handbook, halfpage
handbook, halfpage
100
ηD
(%)
Gp
(dB)
PL
(W)
16
10
12
Gp
80
ηD
60
8
40
4
0
0
1
2
PIN (W)
0
4
8
12
PL (W)
20
16
Class-B operation; VDS = 12.5 V; IDQ = 25 mA;
f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W.
Class-B operation; VDS = 12.5 V; IDQ = 25 mA;
f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W.
Fig.11 Load power as a function of input power,
typical values.
Fig.12 Power gain and efficiency as functions of
load power, typical values.
+VG
handbook, full pagewidth
R3
C14
L6
+VD
R2
C6
C13
C7
L5
C2
50 Ω
input
C1
R1
C5
L1
D.U.T.
L2
L4
C8
L7
L8
L3
C9
C3
C11
C12
50 Ω
output
C10
C4
MGP161
f = 175 MHz.
Fig.13 Test circuit for class-B operation.
September 1992
7
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF244
List of components (class-B test circuit)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
C1, C12
multilayer ceramic chip capacitor
(note 1)
680 nF
C2
multilayer ceramic chip capacitor
(note 1)
20 pF
C3, C4, C9
film dielectric trimmer
5 to 60 pF
C5
multilayer ceramic chip capacitor
(note 1)
75 pF
C6
multilayer ceramic chip capacitor
10 nF
C7
multilayer ceramic chip capacitor
(note 1)
100 pF
C8
multilayer ceramic chip capacitor
(note 1)
47 pF
C10, C11
multilayer ceramic chip capacitor
(note 1)
11 pF
C13
solid tantalum capacitor
2.2 µF
C14
multilayer ceramic chip capacitor
100 nF
L1
4 turns enamelled 1 mm copper wire 32 nH
length 6.3 mm
int. dia. 3 mm
leads 2 × 5 mm
L2
1 turn enamelled 1 mm copper wire
12.2 nH
int. dia. 5.6 mm
leads 2 × 5 mm
30 Ω
CATALOGUE NO.
2222 809 08003
2222 852 47103
2222 852 47104
15 × 6 mm
L3, L4
stripline (note 2)
L5
6 turns enamelled 1 mm copper wire 119 nH
L6
grade 3B Ferroxcube RF choke
L7
2 turns enamelled 1 mm copper wire 19 nH
length 2.4 mm
int. dia. 3 mm
leads 2 × 5 mm
L8
4 turns enamelled 1 mm copper wire 28.5 nH
length 8.5 mm
int. dia. 3 mm
leads 2 × 5 mm
R1
metal film resistor (note 3)
R2
0.4 W metal film resistor
1 MΩ
R3
0.4 W metal film resistor
10 Ω
length 10.4 mm
int. dia. 6 mm
leads 2 × 5 mm
4312 020 36640
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric (εr = 4.5),
thickness 1⁄16 inch.
3. Refer to Application Information for value.
September 1992
8
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF244
150
handbook, full pagewidth
strap
rivet
70
strap
L6
R2
C13
+VG
C2
C1
L1
C5
L2
+VD
C7 C14
C6
R3
L5
R1
L7
L3
C8
L8
C11
C12
L4
C10
C3
C9
C4
MGP162
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being
unetched copper to serve as ground plane. Earth connections are made by fixing screws, copper straps and
hollow rivets under the sources and around the edges to provide a direct contact between the copper on the
component side and the ground plane.
Dimensions in mm.
Fig.14 Component layout for 175 MHz class-B test circuit.
September 1992
9
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF244
MGP164
60
MGP165
25
handbook, halfpage
handbook, halfpage
Zi
ZL
(Ω)
20
(Ω)
RL
40
15
xi
10
20
XL
5
ri
0
20
40
60
80
0
20
100
120
f (MHz)
40
60
80
100
120
f (MHz)
Class-B operation; VDS = 28 V; IDQ = 25 mA;
PL = 15 W; Th = 25 °C; Rth mb-h = 0.3 K/W.
Class-B operation; VDS = 28 V; IDQ = 25 mA;
PL = 15 W; Th = 25 °C; Rth mb-h = 0.3 K/W.
Fig.15 Input impedance as a function of frequency
(series components), typical values.
Fig.16 Load impedance as a function of frequency
(series components), typical values.
MGP166
40
handbook, halfpage
Gp
(dB)
36
32
28
24
20
20
40
60
80
100
120
f (MHz)
Class-B operation; VDS = 28 V; IDQ = 25 mA;
PL = 15 W; Th = 25 °C; Rth mb-h = 0.3 K/W.
Fig.17 Power gain as function of frequency, typical
values.
September 1992
10
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF244
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT123A
D
A
F
q
C
B
U1
w2 M C
c
H
b
L
4
3
α
A
p
U3
U2
w1 M A B
1
2
H
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
F
H
L
p
Q
q
U1
U2
U3
w1
w2
mm
7.47
6.37
5.82
5.56
0.18
0.10
9.73
9.47
9.63
9.42
2.72
2.31
20.71
19.93
5.61
5.16
3.33
3.04
4.63
4.11
18.42
25.15
24.38
6.61
6.09
9.78
9.39
0.51
1.02
inches
0.294
0.251
0.229 0.007
0.219 0.004
0.182
0.725
0.162
0.99
0.96
0.26
0.24
0.385
0.370
0.02
0.04
OUTLINE
VERSION
0.383 0.397 0.107 0.815
0.373 0.371 0.091 0.785
0.221 0.131
0.203 0.120
REFERENCES
IEC
JEDEC
EIAJ
SOT123A
September 1992
α
45°
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
11
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF244
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1992
12
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