RJL5015DPK Datasheet

RJL5015DPK Datasheet
Preliminary Datasheet
RJL5015DPK
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1912-0100
Rev.1.00
May 27, 2010
Features
 Built-in fast recovery diode
 Low on-resistance
RDS(on) = 0.23  typ. (at ID = 11 A, VGS = 10 V, Ta = 25C)
 Low leakage current
 High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
D
1. Gate
2. Drain (Flange)
3. Source
G
1
2
S
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IDR (pulse)Note1
IAPNote3
Note3
EAR
Pch Note2
ch-c
Tch
Tstg
Ratings
500
±30
22
66
22
66
7
Unit
V
V
A
A
A
A
A
2.7
150
0.833
150
–55 to +150
mJ
W
C/W
C
C
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tc = 25C
3. STch = 25C, Tch  150C
REJ03G1912-0100 Rev.1.00
May 27, 2010
Page 1 of 6
RJL5015DPK
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
RDS(on)
Min
500
—
—
1.5
—
Typ
—
—
—
—
0.23
Max
—
10
±0.1
4.0
0.27
Unit
V
A
A
V

Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
—
—
—
—
—
—
—
—
—
—
—
2400
264
32
36
28
108
50
66
12
29
0.91
—
—
—
—
—
—
—
—
—
—
1.55
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
trr
—
140
—
ns
Test conditions
ID = 10 mA, VGS = 0
VDS = 500 V, VGS = 0
VGS = 30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 11 A, VGS = 10 V Note4
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 11 A
VGS = 10 V
RL = 22.7 
Rg = 10 
VDD = 400 V
VGS = 10 V
ID = 22 A
IF = 22 A, VGS = 0 Note4
IF = 22 A, VGS = 0
diF/dt = 100 A/s
Notes: 4. Pulse test
REJ03G1912-0100 Rev.1.00
May 27, 2010
Page 2 of 6
RJL5015DPK
Preliminary
Main Characteristics
Typical Output Characteristics
Maximum Safe Operation Area
50
μs
ID (A)
10
Operation in this
area is limited by
RDS(on)
0.1
Tc = 25°C
1 shot
0.01
0.1
1
10
100
Drain to Source Voltage
Drain to Source on State Resistance
RDS(on) (Ω)
25°C
−25°C
0.1
2
4
6
Gate to Source Voltage
Static Drain to Source on State Resistance
RDS(on) (Ω)
4.8 V
4.6 V
10
4.4 V
VGS = 4 V
0
8
12
16
20
VDS (V)
10
VGS = 10 V
Ta = 25°C
Pulse Test
1
0.1
8
1
0.6
ID = 22 A
0.4
3A
11 A
0.2
100
ID (A)
Body-Drain Diode Reverse
Recovery Time (Typical)
0.8
VGS = 10 V
Pulse Test
10
Drain Current
VGS (V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
0
-25
4
Drain to Source Voltage
Reverse Recovery Time trr (ns)
ID (A)
Drain Current
10
0
5V
20
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
VDS = 10 V
Pulse Test
0.01
5.2 V
VDS (V)
100
Tc = 75°C
5.4 V
0
1000
Typical Transfer Characteristics
1
40
30
Drain Current
1
10 V
Ta = 25°C
Pulse Test
00 μs
Drain Current
10
1
PW =
ID (A)
100
1000
100
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
10
0
25
50
75
Case Temperature
REJ03G1912-0100 Rev.1.00
May 27, 2010
100 125 150
Tc (°C)
1
10
Reverse Drain Current
100
IDR (A)
Page 3 of 6
RJL5015DPK
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
1000
Drain to Source Voltage
Capacitance C (pF)
Ciss
Coss
100
Crss
10
1
0
VGS = 0
f = 1 MHz
Ta = 25°C
50
100
150
Drain to Source Voltage
200
800
VDD = 400 V
250 V
100 V
600
8
200
4
VDD = 400 V
250 V
100 V
0
0
250
VDS (V)
20
40
ID = 22 A
Ta = 25°C
60
Gate Charge
80
0
100
Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
50
4
VGS = 0 V
Ta = 25°C
Pulse Test
40
Gate to Source Cutoff Voltage
VGS(off) (V)
IDR (A)
12
VDS
400
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Reverse Drain Current
16
VGS
Gate to Source Voltage
VDS (V)
10000
VGS (V)
Dynamic Input Characteristics (Typical)
30
20
10
0
0
0.4
0.8
1.2
Source to Drain Voltage
REJ03G1912-0100 Rev.1.00
May 27, 2010
1.6
2.0
VSD (V)
ID = 10 mA
3
1 mA
2
0.1 mA
1
VDS = 10 V
0
-25
0
25
50
75
Case Temperature
100 125 150
Tc (°C)
Page 4 of 6
RJL5015DPK
Preliminary
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 0.833°C/W, Tc = 25°C
0.1
0.05
0.03
PDM
D=
0.02
1
0.0
PW
T
PW
T
0.01
10 μ
100 μ
1m
10 m
Pulse Width
100 m
1
10
PW (s)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
10 Ω
Vin
10 V
VDD
= 250 V
Vin
Vout
10%
10%
10%
90%
td(on)
REJ03G1912-0100 Rev.1.00
May 27, 2010
tr
90%
td(off)
tf
Page 5 of 6
RJL5015DPK
Preliminary
Package Dimensions
JEITA Package Code
SC-65
Previous Code
TO-3P / TO-3PV
RENESAS Code
PRSS0004ZE-A
15.6 ± 0.3
MASS[Typ.]
5.0g
Unit: mm
4.8 ± 0.2
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
Package Name
TO-3P
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
5.45 ± 0.5
Ordering Information
Part No.
RJL5015DPK-00-T0
Quantity
360 pcs
REJ03G1912-0100 Rev.1.00
May 27, 2010
Shipping Container
Box (Tube)
Page 6 of 6
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