H5N5006DL H5N5006DS Datasheet

H5N5006DL H5N5006DS Datasheet

To our customers,

Old Company Name in Catalogs and Other Documents

On April 1

st

, 2010, NEC Electronics Corporation merged with Renesas Technology

Corporation, and Renesas

Electronics Corporation

took over all the business of both companies.

Therefore, although the old company name remains in this document, it is a valid

Renesas

Electronics document. We appreciate your understanding.

Renesas Electronics website: http://www.renesas.com

April 1

st

, 2010

Renesas Electronics Corporation

Issued by: Renesas Electronics Corporation ( http://www.renesas.com

)

Send any inquiries to http://www.renesas.com/inquiry .

Notice

1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.

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(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries.

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H5N5006DL, H5N5006DS

Silicon N Channel MOS FET

High Speed Power Switching

Features

Low on-resistance: R

DS(on)

Low leakage current: I

DSS

= 2.5

typ.

= 1

µ

A max. (at V

DS

= 500 V)

High speed switching: t f

= 15 ns typ. (at V

GS

= 10 V, V

DD

250 V, I

Low gate charge: Qg = 14 nC typ. (at V

DD

Avalanche ratings

= 400 V, V

GS

= 10 V, I

D

D

= 1.5 A)

= 3 A)

Outline

RENESAS Package code: PRSS0004ZD-B

(Package name: DPAK (L)-(2) )

4

RENESAS Package code: PRSS0004ZD-C

(Package name: DPAK (S) )

D

4

REJ03G0397-0100

Rev.1.00

May 30, 2006

G

1. Gate

2. Drain

3. Source

4. Drain

1

2

3

1

2

3

Absolute Maximum Ratings

S

(Ta = 25°C)

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Body-drain diode reverse drain peak current

Avalanche current

Channel dissipation

Channel to case thermal impedance

Channel temperature

Storage temperature

Notes: 1. PW 10

µ s, duty cycle

1%

2. Value at Tc = 25

°

C

3. 25

°

C, Tch

150

°

C

V

DSS

500 V

V

GSS

±30 V

I

D

3 A

I

D (pulse)

Note1

12 A

I

DR

3 A

I

DR (pulse)

Note1

12 A

I

AP

Note3

3 A

Pch

Note2

30 W

θ ch-c 4.17 C/W

Tch

Tstg

150

–55 to +150

°

C

°

C

Rev.1.00, May 30, 2006, page 1 of 7

H5N5006DL, H5N5006DS

Electrical Characteristics

Drain to source breakdown voltage

Zero gate voltage drain current

Gate to source leak current

Gate to source cutoff voltage

Forward transfer admittance

Static drain to source on state resistance

Input capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate to source charge

Gate to drain charge

Body-drain diode forward voltage

Body-drain diode reverse recovery time

Body-drain diode reverse recovery charge

Notes: 4. Pulse test

V

(BR)DSS

500 — — V I

D

= 10 mA, V

GS

= 0

I

DSS

— — 1

µ

A V

DS

= 500 V, V

GS

= 0

I

GSS

— — ±0.1 A V

GS

= ±30 V, V

DS

= 0

V

GS(off)

|y fs

R

DS(on)

— 2.5 3.0

= 10 V, I

D

= 1 mA

= 1.5 A, V

DS

= 10 V

Note4

I

D

= 1.5 A, V

GS

= 10 V

Note4

Ciss — 365 — pF V

DS

= 25 V

Coss — 35 — pF

= 0

Crss — 8 — pF f = 1 MHz t d(on)

— 20 — ns

250 V, I

D

= 1.5 A t r

— 12 — ns

= 10 V t d(off)

— 48 — ns

Ω t f

— 15 — ns

Qg

Qgs

14

2

— nC nC

V

DD

= 400 V

V

GS

= 10 V

I

D

= 3 A

Qgd

V

DF

— 8 — nC

= 3 A, V

GS

= 0

Note4 t rr

— — ns

GS

= 0 di

F

/dt = 100 A/

µ s

Q rr

— 0.8 —

µ

C

Rev.1.00, May 30, 2006, page 2 of 7

H5N5006DL, H5N5006DS

Main Characteristics

Power vs. Temperature Derating

40

30

20

10

0

0

50 100 150

Case Temperature Tc (°C)

200

Typical Output Characteristics

5

Pulse Test

8 V

10 V

4

6 V

3

5.5 V

2

1

0

0 12

5 V

V

GS

= 4.5 V

16 20 4 8

Drain to Source Voltage V

DS

(V)

20

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Pulse Test

16

12

I

D

= 3 A

8

2 A

4

1 A

0

0 4 8 12 16

Gate to Source Voltage V

GS

(V)

20

Rev.1.00, May 30, 2006, page 3 of 7

Maximum Safe Operation Area

50

20

10

5

2

1

0.5

1 ms

100

PW = 10 ms (1shot)

µs

DC Operation

(Tc = 25°C)

10

µs

0.2

0.1

0.05

Operation in this area is limited by R

DS(on)

0.02

0.01

Ta = 25°C

0.005

0.1 0.3

1 3 10 30 100 300 1000

Drain to Source Voltage V

DS

(V)

Typical Transfer Characteristics

5

4

V

DS

= 10 V

Pulse Test

3

2

Tc = 75°C

1

25°C

–25°C

0

0 2 4 6 8

Gate to Source Voltage V

GS

(V)

10

Static Drain to Source on State Resistance vs. Drain Current

10

Pulse Test

5

2

1

0.5

V

GS

= 10 V, 15 V

0.2

0.1

0.1

0.2

0.5

1 2

Drain Current I

D

(A)

5 10

H5N5006DL, H5N5006DS

Static Drain to Source on State Resistance vs. Temperature

10

Pulse Test

V

GS

= 10 V

8

I

D

= 3 A

6

4

2

1 A

2 A

0

–40 0 40 80 120

Case Temperature Tc (°C)

160

Body-Drain Diode Reverse

Recovery Time

1000

500

200

100

50

20

10

0.1

0.2

0.5

di / dt = 100 A /

µs

V

GS

= 0, Ta = 25°C

1 2 5 10

Reverse Drain Current I

DR

(A)

Dynamic Input Characteristics

1000

I

D

= 3 A

800

V

GS

600

V

DD

= 100 V

250 V

400 V

V

DS

400

20

16

12

8

200

0

0

V

DD

= 400 V

250 V

100 V

16 24 8 32

Gate Charge Qg (nC)

4

40

0

Rev.1.00, May 30, 2006, page 4 of 7

2

1

0.5

10

5

Forward Transfer Admittance vs.

Drain Current

Tc = –25°C

75°C

25°C

0.2

V

DS

= 10 V

Pulse Test

0.1

0.1

0.2

0.5

1 2

Drain Current I

D

(A)

5 10

Typical Capacitance vs.

Drain to Source Voltage

1000

500

Ciss

200

100

50

20

10

5

2

1

0

V

GS

= 0 f = 1 MHz

50

Coss

Crss

100 150 200 250

Drain to Source Voltage V

DS

(V)

Switching Characteristics

1000

300

V

R

GS

G

= 10 V, V

= 10

DD

= 250 V

PW = 5

µs, duty ≤ 1 % t f

100 t d(off)

30 t d(on)

10 t r

3

1

0.1 0.2

0.5

1 2 5 10 20

Drain Current I

D

(A)

H5N5006DL, H5N5006DS

Reverse Drain Current vs.

Source to Drain Voltage

5

4

3

2

1

5 V, 10 V

Pulse Test

V

GS

= 0 V

0

0 0.4

0.8

1.2

1.6

Source to Drain Voltage V

SD

(V)

2.0

5

4

Gate to Source Cutoff Voltage vs. Case Temperature

I

D

= 10 mA

1 mA

0.1 mA

3

2

1

0

–50

V

DS

= 10 V

0 50 100 150

Case Temperature Tc (°C)

200

3

Normalized Transient Thermal Impedance vs. Pulse Width

Tc = 25°C

1

D = 1

0.5

0.3

0.2

0.1

0.1

0.05

0.02

0.03

0.01

0.01

10

µ

1shot pulse

100

µ

1 m 10 m

θ ch – c (t) =

γ s (t) •

θ ch – c

θ ch – c = 4.17

°

C/W, Tc = 25

°

C

P

DM

Pulse Width PW (S)

PW

T

100 m 1

D =

PW

T

10

Switching Time Test Circuit

Vin Monitor

10

Vin

10 V

D.U.T.

R

L

Vout

Monitor

V

DD

= 250 V

Waveform

90% t

Vin

Vout

10%

10% d(on)

90% t r

90% t d(off)

10% t f

Rev.1.00, May 30, 2006, page 5 of 7

H5N5006DL, H5N5006DS

Package Dimensions

H5N5006DL

Package Name

DPAK(L)-(2)

JEITA Package Code

RENESAS Code

PRSS0004ZD-B

Previous Code

DPAK(L)-(2) / DPAK(L)-(2)V

MASS[Typ.]

0.42g

6.5 ± 0.5

5.4 ± 0.5

2.3 ± 0.2

0.55 ± 0.1

1.15 ± 0.1

0.8 ± 0.1

(0.7)

1.2 ± 0.3

0.55 ± 0.1

2.29 ± 0.5

2.29 ± 0.5

0.55 ± 0.1

H5N5006DS

Package Name

DPAK(S)

JEITA Package Code

SC-63

RENESAS Code

PRSS0004ZD-C

Previous Code

DPAK(S) / DPAK(S)V

MASS[Typ.]

0.28g

(0.1)

6.5 ± 0.5

5.4 ± 0.5

(0.1)

2.3 ± 0.2

0.55 ± 0.1

(5.1)

1.0 Max.

2.29 ± 0.5

0 – 0.25

(1.2)

0.8 ± 0.1

2.29 ± 0.5

0.55 ± 0.1

Unit: mm

Unit: mm

Rev.1.00, May 30, 2006, page 6 of 7

H5N5006DL, H5N5006DS

Ordering Information

Part Name

H5N5006DL-E 3200 pcs

Quantity

Box (Sack)

Shipping Container

Taping

Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.

Rev.1.00, May 30, 2006, page 7 of 7

Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Keep safety first in your circuit designs!

1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.

Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary

circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.

Notes regarding these materials

1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.

2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.

3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein.

The information described here may contain technical inaccuracies or typographical errors.

Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.

Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com).

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5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.

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7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination.

Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.

8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.

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http://www.renesas.com

Refer to "http://www.renesas.com/en/network" for the latest and detailed information.

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Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501

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Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900

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Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999

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© 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.

Colophon .6.0

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