HAT2096H Datasheet

HAT2096H Datasheet
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HAT2096H
Silicon N Channel Power MOS FET
Power Switching
REJ03G1186-0400
(Previous: ADE-208-1431B)
Rev.4.00
Sep 07, 2005
Features
•
•
•
•
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS (on) = 4.2 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
D
5
4
G
12
1, 2, 3
4
5
34
S S S
1 2 3
Rev.4.00 Sep 07, 2005 page 1 of 6
Source
Gate
Drain
HAT2096H
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Symbol
VDSS
Value
30
Unit
V
VGSS
ID
±20
40
V
A
160
40
A
A
20
150
W
°C
–55 to +150
°C
ID (pulse)
IDR
Note 1
Note 2
Channel dissipation
Channel temperature
Pch
Tch
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25 °C
Tstg
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Symbol
V (BR) DSS
Min
30
Typ
—
Max
—
Unit
V
Test Conditions
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
Gate to source leak current
V (BR) GSS
IGSS
±20
—
—
—
—
±10
V
µA
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
IDSS
VGS (off)
—
1.0
—
—
1
2.5
µA
V
VDS = 30 V, VGS = 0
VDS = 10 V, ID = 1 mA
RDS (on)
RDS (on)
—
—
4.2
7.0
5.3
10
mΩ
mΩ
ID = 20 A, VGS = 10 V
Note 3
ID = 20 A, VGS = 4.5 V
Forward transfer admittance
Input capacitance
|yfs|
Ciss
30
—
50
2200
—
—
S
pF
Output capacitance
Reverse transfer capacitance
Coss
Crss
—
—
600
330
—
—
pF
pF
ID = 20 A, VDS = 10 V
VDS = 10 V
VGS = 0
f = 1 MHz
Total gate charge
Gate to source charge
Qg
Qgs
—
—
40
7
—
—
nC
nC
Gate to drain charge
Turn-on delay time
Qgd
td (on)
—
—
8
20
—
—
nC
ns
tr
49
62
—
—
ns
ns
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Rise time
Turn-off delay time
td (off)
—
—
Fall time
Body-drain diode forward voltage
tf
VDF
—
—
15
0.85
—
1.11
ns
V
trr
—
60
—
ns
Body-drain diode reverse recovery time
Note:
3. Pulse test
Rev.4.00 Sep 07, 2005 page 2 of 6
Note 3
Note 3
VDD = 10 V
VGS = 10 V
ID = 40 A
VGS = 10 V, ID = 20 A
VDD ≅ 10 V
RL = 0.5 Ω
Rg = 4.7 Ω
IF = 40 A, VGS = 0
IF = 40 A, VGS = 0
diF/dt = 50 A/µs
Note 3
HAT2096H
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
500
ID (A)
100
30
Drain Current
Channel Dissipation
Pch (W)
40
20
10
10
1m
PW
s
=
Op 10
era ms
tio
n
Operation in
this area is
limited by RDS (on)
DC
10
1
0.1
Tc = 25°C
1 shot Pulse
0
0
50
100
0.01
0.1
200
150
Case Temperature
3
10
3.5 V
100
VDS (V)
VDS = 10 V
Pulse Test
40
ID
40
30
30
3V
20
10
20
25°C
Tc = 75°C
10
–25°C
VGS = 2.5 V
0
0
0
2
4
6
Drain to Source Voltage
8
10
0
Pulse Test
0.16
0.12
0.08
ID = 10 A
0.04
5A
2A
0
0
4
8
12
Gate to Source Voltage
Rev.4.00 Sep 07, 2005 page 3 of 6
16
20
VGS (V)
2
3
4
5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS (on) (mΩ)
0.20
1
Gate to Source Voltage
VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
VDS (on) (V)
30
50
Pulse Test
(A)
10 V
4.5 V
1
Typical Transfer Characteristics
Drain Current
Drain Current
ID
(A)
50
0.3
Drain to Source Voltage
Tc (°C)
Typical Output Characteristics
Drain to Source Voltage
10
µ
0µ s
s
100
Pulse Test
50
20
10
VGS = 4.5 V
5
10 V
2
1
0.1 0.2 0.5 1
2
5 10 20
Drain Current
ID (A)
50 100
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (mΩ)
HAT2096H
20
Pulse Test
16
ID = 2 A, 5 A, 10 A
12
VGS = 4.5 V
8
4
2 A, 5 A, 10 A
10 V
0
–40
0
40
80
Case Temperature
120
Tc
160
100
Tc = –25°C
30
10
75°C
3
25°C
1
0.3
VDS = 10 V
Pulse Test
0.1
0.1
0.3
3000
Capacitance C (pF)
500
200
100
50
3
10
30
1000
Coss
300
Crss
100
VGS = 0
f = 1 MHz
0
100
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
16
VGS
VDD = 25 V
10 V
5V
VDS
12
8
20
10
4
VDD = 25 V
10 V
5V
0
20
40
Gate Charge
Rev.4.00 Sep 07, 2005 page 4 of 6
60
80
Qg (nc)
0
100
200
Switching Time t (ns)
40
VGS (V)
VDS (V)
Drain to Source Voltage
1
20
0
100
10
0.3
ID = 40 A
30
30
Ciss
30
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
Gate to Source Voltage
Reverse Recovery Time trr (ns)
10000
50
10
Typical Capacitance vs.
Drain to Source Voltage
1000
10
0.1
3
Drain Current ID (A)
(°C)
Body-Drain Diode Reverse
Recovery Time
20
1
100
td(off)
50
tr
20
td(on)
tf
10
5
VGS = 10 V, VDS = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
2
0.1 0.2
0.5
1
2
Drain Current
5
ID (A)
10
20
HAT2096H
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
50
Pulse Test
10 V
40
5V
30
VGS = 0
20
10
0
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
VSD
(V)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D=1
0.5
0.3
0.2
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 6.25°C/W, Tc = 25°C
0.1
0.05
D=
PDM
0.03
0.02
1
0.0
1s
h
p
ot
0.01
10 µ
ul
se
PW
T
PW
T
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Waveform
Switching Time Test Circuit
90%
Vout
Monitor
Vin Monitor
D.U.T.
Rg
Vin
Vout
Vin
10 V
VDS
= 10 V
10%
10%
90%
td(on)
Rev.4.00 Sep 07, 2005 page 5 of 6
10%
RL
tr
90%
td(off)
tf
HAT2096H
Package Dimensions
JEITA Package Code
RENESAS Code
SC-100
PTZZ0005DA-A
Package Name
MASS[Typ.]
LFPAK
Unit: mm
0.080g
4.9
5.3 Max
4.0 ± 0.2
+0.05
4.2
6.1 –0.3
+0.1
3.95
5
4
0° – 8°
+0.25
+0.05
0.20 –0.03
0.6 –0.20
1.3 Max
1
1.1 Max
+0.03
0.07 –0.04
3.3
1.0
0.25 –0.03
0.75 Max
0.10
1.27
0.40 ± 0.06
0.25 M
(Ni/Pd/Au plating)
Ordering Information
Part Name
Quantity
Shipping Container
HAT2096H-EL-E
2500 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.4.00 Sep 07, 2005 page 6 of 6
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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