H7P1002DL H7P1002DS Datasheet

H7P1002DL H7P1002DS Datasheet
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Old Company Name in Catalogs and Other Documents
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April 1st, 2010
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Notice
1.
2.
3.
4.
5.
6.
7.
All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
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“Standard”:
8.
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10.
11.
12.
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
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damages arising out of the use of Renesas Electronics products beyond such specified ranges.
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H7P1002DL, H7P1002DS
Silicon P Channel MOS FET
High Speed Power Switching
REJ03G1601-0100
Rev.1.00
Nov 16, 2007
Features
• Low on-resistance
RDS(on) = 85 mΩ typ.
• Low drive current
• 4.5 V gate drive device can driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK (L)-(2) )
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
4
4
D
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
G
H7P0601DS
1
2
S
3
H7P0601DL
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
REJ03G1601-0100 Rev.1.00 Nov 16, 2007
Page 1 of 8
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
Rating
–100
±20
–15
–60
–15
Unit
V
V
A
A
A
IAP Note3
EAR Note3
Pch Note2
Tch
Tstg
–12
14.4
30
150
–55 to +150
A
mJ
W
°C
°C
H7P1002DL, H7P1002DS
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Drain to source breakdown
voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
Static drain to source on state
resistance
RDS(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
Turn-off delay time
Fall time
Body-drain diode forward voltage
td(off)
tf
VDF
Body-drain diode reverse recovery
time
Note:
trr
4. Pulse test
REJ03G1601-0100 Rev.1.00 Nov 16, 2007
Page 2 of 8
Min
–100
Typ
—
Max
—
Unit
V
Test Conditions
ID = –10 mA, VGS = 0
±20
—
—
–1.0
—
—
7.2
—
—
—
—
—
—
—
—
—
—
—
—
85
105
12
2600
190
120
45
6.5
9.0
23
45
—
±10
–10
–2.5
105
150
—
—
—
—
—
—
—
—
—
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = –100 V, VGS = 0
ID = –1 mA, VDS = –10 V Note4
ID = –7.5 A, VGS = –10 V Note4
ID = –7.5 A, VGS = –4.5 V Note4
ID = –7.5 A, VDS = –10 V Note4
VDS = –10 V
VGS = 0
f = 1 MHz
—
—
—
—
80
13
–0.91
50
—
—
—
—
ns
ns
V
ns
VDD = –50 V
VGS = –10 V
ID = –15 A
VGS = –10 V, ID = –7.5 A
RL = 4.0 Ω
Rg = 4.7 Ω
IF = –15 A, VGS = 0
IF = –15 A, VGS = 0
diF/dt = 100 A/µs
H7P1002DL, H7P1002DS
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
–100
ID (A)
Drain Current
20
10
DC
0
25
50
75
100
Case Temperature
–20
µs
–1
–0.3
–0.1
125
Ta = 25°C
–0.01
–0.1 –0.3 –1 –3 –10 –30 –100 –300 –1000
150
Tc (°C)
Drain to Source Voltage
–10 V
–8 V
–20
Pulse Test
VDS = –10 V
Pulse Test
–3.5 V
ID (A)
–15
–5 V
–4 V
–3 V
–10
–5
–15
–10
–5
Tc = 75°C
25°C
VGS = –2 V
0
0
–2
–4
–6
Drain to Source Voltage
–8
–25°C
0
–10
VDS (V)
Pulse Test
ID = –10 A
–0.8
–0.6
–5 A
–0.4
–2 A
–0.2
0
0
–4
–8
–12
Gate to Source Voltage
–16
–20
VGS (V)
REJ03G1601-0100 Rev.1.00 Nov 16, 2007
Page 3 of 8
–1
–2
–3
–4
–5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Static Drain to Source on State Resistance
RDS (on) (mΩ)
–1.2
0
Gate to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
VDS (V)
Typical Transfer Characteristics
Drain Current
ID (A)
10
O
m
pe
s(
ra
1
tio
sh
n
ot
(T
)
c=
25
°C
)
Operation in
this area is
limited by RDS (on)
–3
Typical Output Characteristics
Drain to Source Saturation Voltage
VDS (on) (V)
0
–0.03
0
Drain Current
=
s
30
–10
10
µs
40
PW
m
Channel Dissipation
10
–30
1
Pch (W)
50
1000
Pulse Test
500
200
VGS = –4 V
100
–10 V
50
20
10
–1
–2
–5
–10
Drain Current
–20
–50 –100
ID (A)
H7P1002DL, H7P1002DS
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (mΩ)
Static Drain to Source on State Resistance
vs. Temperature
0.25
Pulse Test
–2 A, –5 A
0.20
ID = –10 A
0.15
VGS = –4.5 V
0.10
–2 A, –5 A
–10 A
–10 V
0.05
0
–50
0
50
100
Case Temperature
150
100
30
Tc = –25°C
10
25°C
3
75°C
1
0.3
VDS = –10 V
Pulse Test
0.1
–0.1
Tc (°C)
Capacitance C (pF)
Reverse Recovery Time trr (ns)
100
30
10
3
–1
–3
–10
Reverse Drain Current
–30
300
Crss
IDR (A)
0
–4
–8
VDD = –100 V
–50 V
–25 V
–12
–160
16
32
Gate Charge
48
64
Qg (nc)
REJ03G1601-0100 Rev.1.00 Nov 16, 2007
Page 4 of 8
–5
–10
–15
–20
–25
–30
–16
80
1000
Switching Time t (ns)
ID = –15 A
VGS
0
Switching Characteristics
VDS
–80
VGS = 0
f = 1 MHz
Drain to Source Voltage VDS (V)
VGS (V)
VDD = –25 V
–50 V
–100 V
Coss
100
10
–100
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
0
0
–100
1000
Dynamic Input Characteristics
–120
–30
Ciss
3000
30
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
–40
–10
10000
300
–0.3
–3
Typical Capacitance vs.
Drain to Source Voltage
Pulse Test
1
–0.1
–1
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time
1000
–0.3
300
td(off)
tr
100
td(on)
30
tf
10
3
VGS = –10 V, VDD = –30 V
PW = 5 µs, duty ≤ 1 %
RG = 4.7 Ω
1
–0.1 –0.3
–1
–3
Drain Current
–10
–30
ID (A)
–100
H7P1002DL, H7P1002DS
Reverse Drain Current vs.
Source to Drain Voltage
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current IDR (A)
–20
–15
–10 V
–10
–5 V
VGS = 0, 5 V
–5
Pulse Test
0
0
–0.4
–0.8
–1.2
–1.6
Source to Drain Voltage
–2.0
20
IAP = –12 A
VDD = –50 V
duty < 0.1 %
Rg ≥ 50 Ω
16
12
8
4
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
VSD (V)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
1
0.5
0.3
0.2
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 4.17°C/W, Tc = 25°C
0.05
2
0.0
0.1
0.03
1s
0.01
10 µ
ho
1
0.0
e
uls
tp
D=
PDM
PW
T
PW
T
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
VDS
Monitor
Avalanche Waveform
L
EAR =
1
• L • IAP2 •
2
VDSS
VDSS – VDD
IAP
Monitor
Rg
V(BR)DSS
IAP
D.U.T
VDD
VDS
ID
Vin
–15 V
50 Ω
0
REJ03G1601-0100 Rev.1.00 Nov 16, 2007
Page 5 of 8
VDD
H7P1002DL, H7P1002DS
Switching Time Test Circuit
Waveform
Vin
Vout
Monitor
Vin Monitor
10%
D.U.T.
Rg
90%
RL
90%
90%
Vin
–10 V
VDD
= –30 V
Vout
td(on)
REJ03G1601-0100 Rev.1.00 Nov 16, 2007
Page 6 of 8
10%
tr
10%
td(off)
tf
H7P1002DL, H7P1002DS
Package Dimensions
• H7P1002DL
JEITA Package Code

RENESAS Code
PRSS0004ZD-B
Previous Code
MASS[Typ.]
DPAK(L)-(2) / DPAK(L)-(2)V
0.42g
1.7 ± 0.5
Package Name
DPAK(L)-(2)
2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
16.2 ± 0.5
3.1 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
(0.7)
4.7 ± 0.5
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
Unit: mm
0.55 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
• H7P1002DS
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZD-C
Previous Code
DPAK(S) / DPAK(S)V
6.5 ± 0.5
5.4 ± 0.5
(0.1)
MASS[Typ.]
0.28g
2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
2.5 ± 0.5
(1.2)
1.0 Max.
2.29 ± 0.5
REJ03G1601-0100 Rev.1.00 Nov 16, 2007
Page 7 of 8
Unit: mm
(5.1)
(5.1)
(0.1)
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
Package Name
DPAK(S)
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
H7P1002DL, H7P1002DS
Ordering Information
Part No.
H7P1002DL-E
H7P1002DSTL-E
Quantity
3200 pcs
3000 pcs
REJ03G1601-0100 Rev.1.00 Nov 16, 2007
Page 8 of 8
Shipping Container
Hold Box, Radial Taping
Taping
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes:
1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes
warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property
rights or any other rights of Renesas or any third party with respect to the information in this document.
2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,
but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass
destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )
5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a
result of errors or omissions in the information included in this document.
6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability
of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular
application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products.
7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications
or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality
and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or
undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall
have no liability for damages arising out of the uses set forth above.
8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:
(1) artificial life support devices or systems
(2) surgical implantations
(3) healthcare intervention (e.g., excision, administration of medication, etc.)
(4) any other purposes that pose a direct threat to human life
Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing
applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all
damages arising out of such applications.
9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,
movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages
arising out of the use of Renesas products beyond such specified ranges.
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and
malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software
alone is very difficult, please evaluate the safety of the final products or system manufactured by you.
11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as
swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products.
Renesas shall have no liability for damages arising out of such detachment.
12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas.
13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have
any other inquiries.
http://www.renesas.com
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
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Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2007. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .7.0
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