RJF0604DPD Data Sheet (60V, 5A Silicon N Channel Thermal FET / Power Switching)

RJF0604DPD Data Sheet (60V, 5A Silicon N Channel Thermal FET / Power Switching)
Target Specifications Datasheet
RJF0604DPD
R07DS0713EJ0200
Rev.2.00
Nov 05, 2013
60V, 5A Silicon N Channel Thermal FET
Power Switching
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
•
•
•
•
•
•
•
Logic level operation (4 V Gate drive).
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
Power supply voltage applies 12 V and 24 V.
For Industrial applications
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
D
4
G
1
2
3
Gate Resistor
Temperature
Sensing
Circuit
Latch
Circuit
1. Gate
2. Drain
3. Source
4. Drain
Current
Limitation
Circuit
Gate
Shut-down
Circuit
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Gate to source voltage
VGSS
Drain current
ID Note3
Body-drain diode reverse drain current
IDR
Note 2
Avalanche current
IAP
Avalanche energy
EAR Note 2
Channel dissipation
Pch Note 1
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Value at Tc = 25°C
2. Tch = 25°C, Rg ≥ 50 Ω
3. It provides by the current limitation lower bound value.
R07DS0713EJ0200 Rev.2.00
Nov 05, 2013
Ratings
60
16
–2.5
5
5
4.7
94.7
30
150
–55 to +150
Unit
V
V
V
A
A
A
mJ
W
°C
°C
Page 1 of 7
RJF0604DPD
Target Specifications
Typical Operation Characteristics
(Ta = 25°C)
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current
(Current limitation value)
Note;
Symbol
VIH
VIL
IIH1
IIH2
IIL
IIH(sd)1
IIH(sd)2
Tsd
Vop
ID limt
Min
3.5
—
—
—
—
—
—
—
3.5
5
Typ
—
—
—
—
—
0.8
0.35
175
—
—
Max
—
1.2
100
50
1
—
—
—
12
—
Unit
V
V
μA
μA
μA
mA
mA
°C
V
A
Test Conditions
Vi = 8 V, VDS = 0
Vi = 3.5 V, VDS = 0
Vi = 1.2 V, VDS = 0
Vi = 8 V, VDS = 0
Vi = 3.5 V, VDS = 0
Channel temperature
VGS = 5 V, VDS = 10 V Note 4
4. Pulse test
Electrical Characteristics
(Ta = 25°C)
Item
Drain current
Symbol
Min
Typ
Max
Unit
ID1
ID2
ID3
—
—
5
60
—
—
—
—
17
10
—
—
A
mA
A
V
VGS = 3.5 V, VDS = 10 V Note 5
VGS = 1.2 V, VDS = 10 V
VGS = 5 V, VDS = 10 V Note 5
ID = 10 mA, VGS = 0
16
–2.5
—
—
—
—
—
—
—
1.1
4
—
—
—
—
—
—
—
—
—
0.8
0.35
—
—
9
58
42
276
—
—
100
50
1
–100
—
—
10
2.1
—
100
75
—
V
V
μA
μA
μA
μA
mA
mA
μA
V
S
mΩ
mΩ
pF
IG = 800 μA, VDS = 0
IG = –100 μA, VDS = 0
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
VGS = 1.2 V, VDS = 0
VGS = –2.4 V, VDS = 0
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
VDS = 32 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 2.5 A, VDS = 10 V Note 5
ID = 2.5 A, VGS = 4 V Note 5
ID = 2.5 A, VGS = 10 V Note 5
VDS = 10 V, VGS = 0, f = 1MHz
1.6
4.7
3.7
4.4
0.81
—
—
—
—
—
μs
μs
μs
μs
V
VGS = 10 V, ID= 2.5 A, RL = 12 Ω
IF = 5 A, VGS = 0
diF/dt = 50 A/μs
VGS = 5 V, VDD = 16 V
VGS = 5 V, VDD = 24 V
Drain to source breakdown
voltage
V(BR)DSS
Gate to source breakdown
voltage
V(BR)GSS
V(BR)GSS
IGSS1
IGSS2
IGSS3
IGSS4
IGS(OP)1
IGS(OP)2
IDSS
VGS(off)
|yfs|
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Forward transfer admittance
Output capacitance
RDS(on)
RDS(on)
Coss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
Body-drain diode forward
voltage
VDF
—
—
—
—
—
Body-drain diode reverse
recovery time
trr
—
67
—
ns
tos1
tos2
—
—
3.4
1.2
—
—
ms
ms
Static drain to source on state
resistance
Over load shut down
Note 6
operation time
Test Conditions
IF = 5 A, VGS = 0
Notes: 5. Pulse test
6. Including the junction temperature rise of the over loaded condition.
R07DS0713EJ0200 Rev.2.00
Nov 05, 2013
Page 2 of 7
RJF0604DPD
Target Specifications
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
100
ID (A)
Thermal shut down
Operation area
30
Drain Current
Channel Dissipation
Pch (W)
40
20
10
0
0
50
100
150
Case Temperature
10
DC Operation
(Tc = 25°C)
1
PW = 10 ms
Operation in
this area is
limited by RDS (on)
0.1
0.01
200
Pulse Test
VDS = 10 V
Pulse Test
ID (A)
5V
4
3
4V
10
VGS = 3 V
Drain Current
ID (A)
Drain Current
8V
7V
2
150°C
1
25°C
Tc = –40°C
0
0
2
4
6
Drain to Source Voltage
8
10
0
Pulse Test
200
ID = 2.5 A
100
1.0 A
0.5 A
0
2
4
6
8
Gate to Source Voltage VGS (V)
R07DS0713EJ0200 Rev.2.00
Nov 05, 2013
10
2
3
4
5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS (on) (mΩ)
300
1
Gate to Source Voltage
VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0
100
5
10 V
0
10
Typical Transfer Characteristics
9V
Drain to Source Saturation Voltage
VDS (on) (mV)
1
Drain to Source Voltage VDS (V)
Tc (°C)
Typical Output Characteristics
20
0.1
500
Pulse Test
200
100
VGS = 4 V
50
10 V
20
10
0.1
0.2
0.5
1
Drain Current
2
5
10
ID (A)
Page 3 of 7
Target Specifications
Static Drain to Source on State Resistance
vs. Temperature
120
Pulse Test
100
ID = 2 A, 0.5 A, 1 A
80
VGS = 4 V
60
40
ID = 2 A, 0.5 A, 1 A
10 V
20
0
–50 –25
0
25
50
75 100 125 150
Case Temperature
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (mΩ)
RJF0604DPD
100
VDS = 10 V
Pulse Test
10
Tc = –40°C
1
25°C
150°C
0.1
0.1
Switching Characteristics
100
1000
VGS = 10 V, VDD = 30 V
PW = 300 μs, duty ≤ 1 %
100
10
di / dt = 50 A / μs
VGS = 0, Ta = 25°C
1
0.1
1
10
Reverse Drain Current
Switching Time t (μs)
Reverse Recovery Time trr (ns)
10
Drain Current ID (A)
Tc (°C)
Body-Drain Diode Reverse
Recovery Time
td(off)
10
1 td(on)
0.1
0.1
100
0.5
1
Drain Current
2
5
ID (A)
Typical Capacitance vs.
Drain to Source Voltage
4
3000
Capacitance C (pF)
10000
VGS = 5 V
0V
2
0.2
IDR (A)
5
3
tr
tf
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
1
1
1000
Coss
300
100
30
VGS = 0
f = 1 MHz
Pulse Test
0
10
0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage VSD (V)
R07DS0713EJ0200 Rev.2.00
Nov 05, 2013
0
10
20
30
40
50
60
Drain to Source Voltage VDS (V)
Page 4 of 7
RJF0604DPD
Target Specifications
Shutdown Case Temperature vs.
Gate to Source Voltage
Shutdown Case Temperature Tc (°C)
Gate to Source Voltage
VGS (V)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
16
14
12
10
VDD = 16 V
8
6
24 V
4
2
0
100 μ
10 m
1m
Shutdown Time of Load-Short Test
100 m
200
180
160
140
120
ID = 0.5 A
100
0
Pw (S)
2
4
6
Gate to Source Voltage
8
10
VGS (V)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
1
D=1
0.5
0.2
0.1
θch - c(t) = γs (t) • θch - c
θch - c = 4.17°C/W, Tc = 25°C
0.1
0.05
0.02
PDM
.01
0
h
1s
0.01
10 μ
ot
pu
D=
lse
PW
T
PW
T
100 μ
1m
10 m
100 m
1
10
Pulse Width PW (S)
R07DS0713EJ0200 Rev.2.00
Nov 05, 2013
Page 5 of 7
RJF0604DPD
Target Specifications
Switching Time Test Circuit
Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Vin
10%
RL
Vout
Vin
10 V
50 Ω
10%
VDD
= 30 V
90%
td(on)
Avalanche Test Circuit
VDS
Monitor
10%
tr
90%
td(off)
tf
Avalanche Waveform
L
EAR =
1
2
L • IAP2 •
V(BR)DSS
V(BR)DSS – VDD
IAP
Monitor
V(BR)DSS
Rg
Vin
10 V
D. U. T
IAP
VDD
ID
50 Ω
0
R07DS0713EJ0200 Rev.2.00
Nov 05, 2013
VDS
VDD
Page 6 of 7
RJF0604DPD
Target Specifications
Package Dimensions
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZD-C
Previous Code
DPAK(S) / DPAK(S)V
MASS[Typ.]
0.28g
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
(5.1)
(5.1)
6.5 ± 0.3
5.6 ± 0.5
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
Package Name
DPAK(S)
0 – 0.25
2.5 ± 0.5
(1.2)
1.0 Max.
2.29 ± 0.5
0.8 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
Ordering Information
Orderable Part Number
RJF0604DPD-00-J3
Note:
Quantity
3000 pcs
Shipping Container
Taping
The symbol of 2nd "-" is occasionally presented as "#".
R07DS0713EJ0200 Rev.2.00
Nov 05, 2013
Page 7 of 7
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