BCR20CM-12LB Data Sheet (600V - 20A

BCR20CM-12LB Data Sheet (600V - 20A
Preliminary Datasheet
BCR20CM-12LB
R07DS1151EJ0100
Rev.1.00
Jan 29, 2014
600V - 20A - Triac
Medium Power Use
Features
• IT (RMS) : 20 A
• VDRM : 600 V
• IFGTI, IRGTI, IRGT III :30 mA(20mA) Note6
• Tj: 150 °C
• Planar Passivation Type
• Non-Insulated Type
N-G
Outline
Applications
Vacuum cleaner, electric heater, light dimmer, copying machine, and controller for other motor and heater
Maximum Ratings
Parameter
Voltage class
12
600
720
Symbol
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
VDRM
VDSM
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
20
Unit
A
Surge on-state current
ITSM
200
A
I2t
167
A2 s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
5
0.5
10
2
–40 to +150
–40 to +150
2.1
W
W
V
A
°C
°C
g
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
R07DS1151EJ0100 Rev.1.00
Jan 29, 2014
Unit
V
V
Conditions
Commercial frequency, sine full wave
360°conduction, Tc = 126°C Note3
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
Page 1 of 7
BCR20CM-12LB
Preliminary
Electrical Characteristics
Parameter
Symbol
Repetitive peak off-state current
IDRM
On-state voltage
VTM
Gate trigger voltageNote2
Gate trigger curentNote2
Max.
2.0
3.0
1.5
Unit
Test conditions
mA
Tj = 125°C, VDRM applied
Tj = 150°C, VDRM applied
V
Tc = 25°C, ITM = 30A,
instantaneous measurement
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Ι
VFGTΙ
—
—
1.5
V
ΙΙ
ΙΙΙ
VRGTΙ
VRGTΙΙΙ
—
—
—
—
1.5
1.5
V
V
Ι
IFGTΙ
—
—
30 Note6
mA
Note6
ΙΙ
ΙΙΙ
IRGTΙ
IRGTΙΙΙ
—
—
—
—
30
30 Note6
mA
mA
VGD
0.2
0.1
—
10
1
—
—
—
—
—
—
—
1.2
—
—
V
V
°C/W
V/μs
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltageNote5
Rated value
Min.
Typ.
—
—
—
—
—
—
Rth (j-c)
(dv/dt)c
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Tj = 125°C, VD = 1/2 VDRM
Tj = 150°C, VD = 1/2 VDRM
Junction to caseNote3, Note4
Tj = 125°C
Tj = 150°C
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T2 tab 1.5 mm apart from the molded case.
4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C /W.
5. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
6. High sensitivity (IGT≤20 mA) is also available. (IGT item: 1)
Test conditions
Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj = 125/150°C
2. Peak off-state voltage
VD = 400 V
3. Rate of decay of on-state commutating current
(di/dt)c = –10 A/ms
R07DS1151EJ0100 Rev.1.00
Jan 29, 2014
Page 2 of 7
BCR20CM-12LB
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
240
Surge On-State Current (A)
On-State Current (A)
103
102
Tj = 150°C
101
Tj = 25°C
100
0
1
2
3
80
40
101
102
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
PGM = 5W
101
PG(AV) =
0.5W
VGT = 1.5V
IGM =
2A
100
IFGT I, IRGT I, IRGT III
101
102
103
104
103
Typical Example
102
IFGT I
IRGT I
IRGT III
101
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
Typical Example
2
101
–40
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Conduction Time (Cycles at 60Hz)
0
40
80
120
Junction Temperature (°C)
R07DS1151EJ0100 Rev.1.00
Jan 29, 2014
Transient Thermal Impedance (°C/W)
Gate Voltage (V)
120
On-State Voltage (V)
10−1
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
160
0
100
4
VGM = 10V
10
200
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10−1
100
101
102
103
Conduction Time (Cycles at 60Hz)
Page 3 of 7
BCR20CM-12LB
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
Maximum On-State Power Dissipation
160
140
Case Temperature (°C)
On-State Power Dissipation (W)
40
30 360° Conduction
Resistive,
inductive loads
20
10
0
0
5
10
15
20
25
30
60
40
360° Conduction
20 Resistive,inductive
loads
0
0
10
20
30
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
140
Ambient Temperature (°C)
All fins are black painted
aluminum and greased
160 160 t2.3
120 120 t2.3
100 100 t2.3
120
100
80
60 Curves apply
regardless of
40 conduction angle.
Resistive,
20 inductive loads
Natural convection
0
0
5
10
15
20
25
Natural convection
No fins
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
140
120
100
80
60
40
20
0
0
30
1
2
3
4
5
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
106
Typical Example
105
104
103
102
–40
0
40
80
120
Junction Temperature (°C)
R07DS1151EJ0100 Rev.1.00
Jan 29, 2014
160
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Ambient Temperature (°C)
80
RMS On-State Current (A)
160
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
120 Curves apply regardless
of conduction angle
100
103
Typical Example
102
101
–40
0
40
80
120
160
Junction Temperature (°C)
Page 4 of 7
BCR20CM-12LB
Preliminary
Breakover Voltage vs.
Junction Temperature
Distribution T +, G–
2
Typical Example
102
101
T2+, G+
Typical Example
T2–, G–
–40
40
80
120
160
160
Typical Example
140
120
100
80
60
40
20
0
–40
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Typical Example
Tj = 125°C
140
120
III Quadrant
100
80
60
I Quadrant
40
20
0 1
10
102
103
104
160
Typical Example
Tj = 150°C
140
120
III Quadrant
100
80
60
I Quadrant
40
20
0 1
10
102
103
104
Rate of Rise of Off-State Voltage (V/μs)
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
Commutation Characteristics (Tj=150°C)
102
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
0
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
10
0
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
101
Minimum
Characteristics
Value
III Quadrant
I Quadrant
100
3
101
30
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS1151EJ0100 Rev.1.00
Jan 29, 2014
102
102
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Latching Current (mA)
103
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Latching Current vs.
Junction Temperature
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
Typical Example
Tj = 150°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
I Quadrant
III Quadrant
Minimum
Characteristics
Value
100
3
101
102
30
Rate of Decay of On-State
Commutating Current (A/ms)
Page 5 of 7
BCR20CM-12LB
Preliminary
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Gate Trigger Current vs.
Gate Current Pulse Width
103
Typical Example
IRGT I
IFGT I
IRGT III
102
101
100
101
102
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
Recommended Circuit Values Around The Triac
Load
C1
A
6V
V
Test Procedure I
R1
A
6V
330Ω
V
330Ω
Test Procedure II
C0
R0
C1 = 0.1 to 0.47μF C0 = 0.1μF
R0 = 100Ω
R1 = 47 to 100Ω
6Ω
A
6V
V
330Ω
Test Procedure III
R07DS1151EJ0100 Rev.1.00
Jan 29, 2014
Page 6 of 7
BCR20CM-12LB
Preliminary
Package Dimensions
Ordering Information
Orderable Part Number
BCR20CM-12LB#BB0
BCR20CM-12LB-1#BB0
BCR20CM-12LB#BB0
BCR20CM12LB1#BB0
Packing
Tube
Tube
Tube
Tube
Quantity
50 pcs.
50 pcs.
50 pcs.
50 pcs.
Remark
Straight type
Straight type, IGT item: 1
: Lead forming type
: Lead forming type, IGT item: 1
Note : Please confirm the specification about the shipping in detail.
R07DS1151EJ0100 Rev.1.00
Jan 29, 2014
Page 7 of 7
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