2SK2096 Datasheet

2SK2096 Datasheet
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2SK2096
Silicon N Channel MOS FET
REJ03G0997-0200
(Previous: ADE-208-1344)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for switching regulator, DC-DC converter
Avalanche ratings
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
1. Gate
2. Drain
(Flange)
3. Source
G
1
Rev.2.00 Sep 07, 2005 page 1 of 7
2
S
3
2SK2096
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
IAP*3
EAR*3
Pch*2
Tch
Tstg
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Ratings
60
±20
45
180
45
45
173
100
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
Static drain to source on state
resistance
RDS(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
Body to drain diode reverse recovery
time
Note:
4. Pulse Test
Rev.2.00 Sep 07, 2005 page 2 of 7
trr
Min
60
±20
20
—
—
1.0
—
—
25
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.018
0.023
37
3530
1480
300
33
160
450
230
1.3
130
Max
—
—
±10
250
2.25
0.022
0.028
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 50 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 25 A, VGS = 10 V*4
ID = 25 A, VGS = 4 V*4
ID = 25 A, VDS = 10 V*4
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 25 A, VGS = 10 V,
RL = 1.5 Ω
IF = 45 A, VGS = 0
IF = 45 A, VGS = 0,
diF / dt = 50 A / µs
2SK2096
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
500
300
ra
tio
3
)
0.3
1
3
10
30
100
Case Temperature TC (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
100
100
4.5 V
10 V
5V
80
Pulse Test
Drain Current ID (A)
Drain Current ID (A)
25
°C
Ta = 25°C
0.5
0.1
200
=
t)
Operation in
this area is
limited by RDS(on)
ho
150
(T
c
10
s
(1
100
s
n
m
50
s
m
pe
1
0
O
10
Drain Current ID (A)
C
30
µs
µs
D
1
40
100
=
80
0
10
120
10
PW
Channel Dissipation Pch (W)
160
4V
60
3.5 V
40
3V
20
Tc = –25°C
25°C
80
Pulse Test
60
75°C
VDS = 10 V
40
20
VGS = 2.5 V
2
4
6
8
2
4
3
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
2.0
Pulse Test
1.6
1.2
50 A
0.8
20 A
0.4
ID = 10 A
0
1
0
10
2
4
6
8
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 7
10
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage
VDS (on) (V)
0
5
0.5
Pulse Test
0.2
0.1
0.05
VGS = 4 V
10 V
0.02
0.01
0.005
2
5
10
20
50
100 200
Drain Current ID (A)
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance yfs (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
2SK2096
0.05
ID = 50 A
0.04
10 A, 20 A
VGS = 4 V
0.03
50 A
0.02
10 A, 20 A
10 V
0.01
0
–40
0
80
40
120
160
50
–25°C
20
75°C
10
5
2
1
0.5
1
2
5
10
20
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
50
10000
Ciss
di/dt = 50 A/µs, VGS = 0
Ta = 25°C
200
100
50
20
Coss
1000
Crss
100
10
VGS = 0
f = 1 MHz
5
10
2
5
10
20
50
100
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
VDD = 50 V
25 V
10 V
80
16
VGS
ID = 40 A
60
12
VDS
8
40
VDD = 50 V
25 V
10 V
20
40
80
120
4
160
Gate Charge Qg (nc)
Rev.2.00 Sep 07, 2005 page 4 of 7
0
200
1000
td(off)
Switching Time t (ns)
20
100
Gate to Source Voltage VGS (V)
1
0
Tc = 25°C
Drain Current ID (A)
Capacitance C (pF)
Reverse Recovery Time trr (ns)
Pulse Test
VDS = 10V
Case Temperature TC (°C)
500
Drain to Source Voltage VDS (V)
100
500
tf
200
tr
100
50
20
10
0.5
td(on)
VGS = 10 V, VDD =: 30 V
PW = 2 µs, duty ≤ 1%
1
2
5
10
20
Drain Current ID (A)
50
2SK2096
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
100
Pulse Test
80
VGS = 10 V
60
5V
40
0, –5 V
20
0
0.4
0.8
1.2
1.6
2.0
200
IAP = 45 A
VDD = 25 V
duty < 0.1 %
Rg > 50 Ω
160
120
80
40
0
25
50
Source to Drain Voltage VSD (V)
75
100
125
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γs (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 1.25°C/W, Tc = 25°C
0.1
0.05
0.03
PDM
0.02
1
lse
0.0 t pu
o
h
1s
0.01
10 µ
100 µ
D=
PW
T
PW
T
1m
10 m
Pulse Width
Rev.2.00 Sep 07, 2005 page 5 of 7
150
100 m
PW (S)
1
10
2SK2096
Avalanche Test Circuit and Waveform
L
VDS
Monitor
VDSS
1
EAR =
• L • IAP2 •
2
VDSS – VDS
IAP
Monitor
V(BR)DSS
IAP
Rg
VDS
VDD
D. U. T
ID
Vin
15 V
50 Ω
V DD
0
Waveforms
Switching Time Test Circuit
Vin Monitor
90%
Vout Monitor
Vin
D.U.T
RL
50 Ω
Vin
10 V
Rev.2.00 Sep 07, 2005 page 6 of 7
VDD
.
=. 30 V
Vout
td (on)
10%
10%
90%
tr
10%
90%
td (off)
tf
2SK2096
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]
SC-65
PRSS0004ZE-A
TO-3P / TO-3PV
5.0g
4.8 ± 0.2
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
Unit: mm
5.0 ± 0.3
15.6 ± 0.3
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
5.45 ± 0.5
Ordering Information
Part Name
2SK2096-E
Quantity
30 pcs
Shipping Container
Plastic magazine
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div.
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