BCR6CM-12RA Data Sheet (600V - 6A

BCR6CM-12RA Data Sheet (600V - 6A
Preliminary Datasheet
BCR6CM-12RA
R07DS1150EJ0100
Rev.1.00
Jan 24, 2014
600V - 6A - Triac
Medium Power Use
Features
• IT (RMS) : 6 A
• VDRM : 600 V
• IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6
• Non-Insulated Type
• Planar Passivation Type
Outline
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
4
2, 4
1.
2.
3.
4.
3
1
T1 Terminal
T2 Terminal
Gate Terminal
T2 Terminal
1
2
3
Applications
Electric rice cooker, electric pot, and controller for other heater
Maximum Ratings
Parameter
Note1
Repetitive peak off-state voltage
Non-repetitive peak off-state voltageNote1
Parameter
Voltage class
Symbol
Unit
12
600
720
VDRM
VDSM
V
V
Symbol
Ratings
Unit
RMS on-state current
IT (RMS)
6
A
Commercial frequency, sine full wave
Note3
360° conduction, Tc = 103°C
Surge on-state current
ITSM
60
A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t
15
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
5
0.5
10
2
– 40 to +125
– 40 to +125
2.1
W
W
V
A
°C
°C
g
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
R07DS1150EJ0100 Rev.1.00
Jan 24, 2014
Conditions
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Page 1 of 6
R07DS1150EJ0100
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.7
Unit
mA
V
Test conditions
Tj = 125°C, VDRM applied
Tc = 25°C, ITM = 9 A,
Instantaneous measurement
Gate trigger voltageNote2
Ι
ΙΙ
ΙΙΙ
VFGTΙ
VRGTΙ
VRGTΙΙΙ
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate trigger currentNote2
Ι
ΙΙ
ΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
—
—
—
—
—
—
30Note6
30Note6
30Note6
mA
mA
mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
VGD
0.2
—
—
V
Rth (j-c)
—
—
2.5
°C/W
Gate non-trigger voltage
Thermal resistance
Notes: 1.
2.
3.
4.
5.
Tj = 125°C,
VD = 1/2 VDRM
Junction to caseNote3 Note4
Gate open.
Measurement using the gate trigger characteristics measurement circuit.
Case temperature is measured at the T2 tab 1.5 mm away from the molded case.
The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
High sensitivity (IGT ≤ 20 mA) is also available. (IGT item: 1)
R07DS1150EJ0100 Rev.1.00
Jan 24, 2014
Page 2 of 6
R07DS1150EJ0100
Preliminary
Performance Curves
Maximum On-State Characteristics
3
2
Tj = 150°C
101
7
5
3
2
Tj = 25°C
100
7
5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
80
70
60
50
40
30
20
10
2 3 4 5 7 101
2 3 4 5 7 102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
3
2 VGM = 10V PG(AV) = 0.5W
PGM = 5W
101
7
5
IGM = 2A
3 VGT = 1.5V
2
100
7
5
3
2
10–1
7 IFGT I IRGT I, IRGT III
VGD = 0.2V
5
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
90
0
100
4.0
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Voltage (V)
Surge On-State Current (A)
100
103
7
5
4
3
2
102
7
5
4
3
2
Typical Example
IRGT III
IFGT I
IRGT I
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
7
5
4
3
2
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
R07DS1150EJ0100 Rev.1.00
Jan 24, 2014
Transient Thermal Impedance (°C/W)
On-State Current (A)
102
7
5
Rated Surge On-State Current
102 2 3 5 7 103
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60Hz)
Page 3 of 6
R07DS1150EJ0100
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
160
18
140
16
360° Conduction
14 Resistive,
12 inductive loads
10
8
6
4
2
0
1
2
3
4
5
6
7
9 10
8
120
100 Curves apply regardless
of conduction angle
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
1
2
3
4
5
6
7
8
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
160
140
140
Ambient Temperature (°C)
Ambient Temperature (°C)
0
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Case Temperature (°C)
20
120 × 120 × t2.3
120
100 × 100 × t2.3
100
60 × 60 × t2.3
80
60 All fins are black painted
aluminum and greased
40 Curves apply regardless
of conduction angle
20 Resistive, inductive loads
Natural convection
0
0
1
2
3
4
5
6
7
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
120
100
80
60
40
20
0
8
0
0.5
1.0
1.5
2.0
2.5
3.0
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
106
7
5
3
2
Typical Example
105
7
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
R07DS1150EJ0100 Rev.1.00
Jan 24, 2014
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
On-State Power Dissipation (W)
Maximum On-State Power Dissipation
103
7
5
4
3
Typical Example
2
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Page 4 of 6
R07DS1150EJ0100
Preliminary
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Latching Current vs.
Junction Temperature
103
7
5
Distribution
T2+, G–
Typical Example
102
7
5
3
2
101
7
5
3
2
T2+, G+
Typical Example
T2–, G–
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
100
–60 –40 –20 0 20 40 60 80 100 120 140 160
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Gate Trigger Current vs.
Gate Current Pulse Width
160
Typical Example
Tj = 125°C
140
120
100
III Quadrant
80
60
I Quadrant
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/μs)
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Latching Current (mA)
3
2
Breakover Voltage vs.
Junction Temperature
103
7
5
4
3
2
Typical Example
IFGT I
IRGT I
IRGT III
102
7
5
4
3
2
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
A
6V
V
A
6V
330Ω
Test Procedure I
V
330Ω
Test Procedure II
6Ω
A
6V
V
330Ω
Test Procedure III
R07DS1150EJ0100 Rev.1.00
Jan 24, 2014
Page 5 of 6
R07DS1150EJ0100
Preliminary
Package Dimensions
RENESAS Code
PRSS0004AG-A
Previous Code
TO-220ABS
MASS[Typ.]
2.1g
Unit: mm
4.5 ± 0.2
9.9 ± 0.2
+ 0.10
φ3.6 ± 0.2
(3.00)
9.2 ± 0.2
15.7 ± 0.2
1.30 – 0.05
1.62 Max
0.80 ± 0.10
13.08 ± 0.20
JEITA Package Code
SC-46
2.8 ± 0.1
Package Name
TO-220AB
2.6 Max
2.54
2.54
+ 0.10
0.50 – 0.05
10.0 ± 0.2
Ordering Information
Orderable Part Number
BCR6CM-12RA#BB0
Note:
Packing
Tube
Quantity
50 pcs.
Remark
Straight type
Please confirm the specification about the shipping in detail.
R07DS1150EJ0100 Rev.1.00
Jan 24, 2014
Page 6 of 6
Notice
1.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
2.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
3.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
4.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or
5.
Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on
third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product.
the product's quality grade, as indicated below.
"Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic
equipment; and industrial robots etc.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc.
Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical
implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it
in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses
incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics.
6.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
7.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or systems manufactured by you.
8.
Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
9.
Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or
regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the
development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and
regulations and follow the procedures required by such laws and regulations.
10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the
contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics
products.
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.com
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 301, Tower A, Central Towers, 555 LanGao Rd., Putuo District, Shanghai, China
Tel: +86-21-2226-0888, Fax: +86-21-2226-0999
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
12F., 234 Teheran-ro, Gangnam-Gu, Seoul, 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2014 Renesas Electronics Corporation. All rights reserved.
Colophon 3.0
Was this manual useful for you? yes no
Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Download PDF

advertisement