NSC 54F219

NSC 54F219
54F/74F219
64-Bit Random Access Memory with TRI-STATEÉ
Outputs
General Description
Features
The ’F219 is a high-speed 64-bit RAM organized as a
16-word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs are
TRI-STATE and are in the high-impedance state whenever
the Chip Select (CS) input is HIGH. The outputs are active
only in the Read mode. This device is similar to the ’F189
but features non-inverting, rather than inverting, data outputs.
Y
Commercial
Y
Y
Y
Y
TRI-STATE outputs for data bus applications
Buffered inputs minimize loading
Address decoding on-chip
Diode clamped inputs minimize ringing
Available in SOIC (300 mil only)
Package
Number
Military
Package Description
N16E
16-Lead (0.300× Wide) Molded Dual-In-Line
J16A
16-Lead Ceramic Dual-In-Line
74F219SC (Note 1)
M16B
16-Lead (0.300× Wide) Molded Small Outline, JEDEC
74F219SJ (Note 1)
M16D
16-Lead (0.300× Wide) Molded Small Outline, EIAJ
54F219FL (Note 2)
W16A
16-Lead Cerpack
54F219LL (Note 2)
E20A
20-Lead Ceramic Leadless Chip Carrier, Type C
74F219PC
54F219DL (Note 2)
Note 1: Devices also available in 13× reel. Use suffix e SCX and SJX.
Note 2: Military grade device with environmental and burn-in processing. Use suffix e DLQB, FLQB and LLQB.
Logic Symbol
Connection Diagrams
Pin Assignment for
DIP, SOIC and Flatpak
Pin Assignment
for LCC
TL/F/9500–1
TL/F/9500 – 2
TL/F/9500 – 3
TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.
C1995 National Semiconductor Corporation
TL/F/9500
RRD-B30M105/Printed in U. S. A.
54F/74F219 64-Bit Random Access Memory with TRI-STATE Outputs
November 1994
Unit Loading/Fan Out
54F/74F
Pin Names
A0 – A3
CS
WE
D0 – D3
O 0 – O3
Description
U.L.
HIGH/LOW
Input IIH/IIL
Output IOH/IOL
Address Inputs
Chip Select Input (Active LOW)
Write Enable Input (Active LOW)
Data Inputs
TRI-STATE Data Outputs
1.0/1.0
1.0/2.0
1.0/1.0
1.0/1.0
150/40 (33.3)
20 mA/b0.6 mA
20 mA/b1.2 mA
20 mA/b0.6 mA
20 mA/b0.6 mA
b 3 mA/24 mA (20 mA)
Function Table
Inputs
CS
WE
L
L
H
L
H
X
Operation
Write
Read
Inhibit
Condition of Outputs
High Impedance
True Stored Data
High Impedance
H e HIGH Voltage Level
L e LOW Voltage Level
X e Immaterial
Block Diagram
TL/F/9500 – 4
2
Absolute Maximum Ratings (Note 1)
Current Applied to Output
in LOW State (Max)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Storage Temperature
b 65§ C to a 150§ C
Ambient Temperature under Bias
Junction Temperature under Bias
Plastic
b 55§ C to a 125§ C
Note 2: Either voltage limit or current limit is sufficient to protect inputs.
b 55§ C to a 175§ C
b 55§ C to a 150§ C
VCC Pin Potential to
Ground Pin
Recommended Operating
Conditions
b 0.5V to a 7.0V
Free Air Ambient Temperature
Military
Commercial
b 0.5V to a 7.0V
Input Voltage (Note 2)
Input Current (Note 2)
Voltage Applied to Output
in HIGH State (with VCC e 0V)
Standard Output
TRI-STATE Output
twice the rated IOL (mA)
Note 1: Absolute maximum ratings are values beyond which the device may
be damaged or have its useful life impaired. Functional operation under
these conditions is not implied.
b 30 mA to a 5.0 mA
b 55§ C to a 100§ C
0§ C to a 70§ C
Supply Voltage
Military
Commercial
b 0.5V to VCC
b 0.5V to a 5.5V
a 4.5V to a 5.5V
a 4.5V to a 5.5V
DC Electrical Characteristics
Symbol
54F/74F
Parameter
Min
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
VCD
Input Clamp Diode Voltage
VOH
Output HIGH
Voltage
Typ
Units
2.0
54F 10% VCC
54F 10% VCC
74F 10% VCC
74F 10% VCC
74F 5% VCC
74F 5% VCC
VCC
Conditions
Max
V
0.8
V
b 1.2
V
2.5
2.4
2.5
2.4
2.7
2.7
Recognized as a HIGH Signal
Recognized as a LOW Signal
Min
IIN e b18 mA
V
Min
IOH
IOH
IOH
IOH
IOH
IOH
IOL e 20 mA
IOL e 24 mA
e
e
e
e
e
e
b 1 mA
b 3 mA
b 1 mA
b 3 mA
b 1 mA
b 3 mA
VOL
Output LOW
Voltage
54F 10% VCC
74F 10% VCC
0.5
0.5
V
Min
IIH
Input HIGH
Current
54F
74F
20.0
5.0
mA
Max
VIN e 2.7V
IBVI
Input HIGH Current
Breakdown Test
54F
74F
100
7.0
mA
Max
VIN e 7.0V
ICEX
Output HIGH
Leakage Current
54F
74F
250
50
mA
Max
VOUT e VCC
VID
Input Leakage
Test
74F
V
0.0
IID e 1.9 mA
All Other Pins Grounded
IOD
Output Leakage
Circuit Current
74F
3.75
mA
0.0
VIOD e 150 mV
All Other Pins Grounded
IIL
Input LOW
Current
b 0.6
b 1.2
mA
Max
VIN e 0.5V (An, WE, Dn)
VIN e 0.5V (CS)
IOZH
Output Leakage Current
50
mA
Max
VOUT e 2.7V
IOZL
Output Leakage Current
b 50
mA
Max
VOUT e 0.5V
IOS
Output Short-Circuit Current
b 150
mA
Max
VOUT e 0V
IZZ
Bus Drainage Test
500
mA
0.0V
VOUT e 5.25V
ICC
Power Supply Current
55
mA
Max
4.75
b 60
37
3
AC Electrical Characteristics
Symbol
Parameter
74F
54F
74F
TA e a 25§ C
VCC e a 5.0V
CL e 50 pF
TA e a 100§ C
VCC e Mil
CL e 50 pF
TA, VCC e Com
CL e 50 pF
Min
Typ
Max
Min
Max
Min
Max
tPLH
tPHL
Access Time, HIGH or LOW
An to On
10.0
8.0
18.5
13.5
26.0
19.0
9.0
8.0
32.0
23.0
10.0
8.0
27.0
20.0
tPZH
tPZL
Access Time, HIGH or LOW
CS to On
3.5
5.0
6.0
9.0
8.5
13.0
3.5
5.0
10.5
15.0
3.5
5.0
9.5
14.0
tPHZ
tPLZ
Disable Time, HIGH or LOW
CS to On
2.0
3.0
4.0
5.5
6.0
8.0
2.0
2.5
8.0
10.0
2.0
3.0
7.0
9.0
tPZH
tPZL
Write Recovery Time
HIGH or LOW, WE to On
6.5
6.5
20.0
11.0
28.0
15.5
6.5
6.5
37.5
17.5
6.5
6.5
29.0
16.5
tPHZ
tPLZ
Disable Time, HIGH or LOW
WE to On
4.0
5.0
7.0
9.0
10.0
13.0
3.5
5.0
12.0
15.0
4.0
5.0
11.0
14.0
Units
ns
ns
ns
AC Operating Requirements
Symbol
Parameter
74F
54F
74F
TA e a 25§ C
VCC e a 5.0V
TA e a 100§ C
VCC e Mil
TA, VCC e Com
Min
Min
Min
Max
Max
ts(H)
ts(L)
Setup Time, HIGH or LOW
An to WE
0
0
0
0
0
0
th(H)
th(L)
Hold Time, HIGH or LOW
An to WE
2.0
2.0
2.0
2.0
2.0
2.0
ts(H)
ts(L)
Setup Time, HIGH or LOW
Dn to WE
10.0
10.0
11.0
11.0
10.0
10.0
th(H)
th(L)
Hold Time, HIGH or LOW
Dn to WE
0
0
2.0
2.0
0
0
ts(L)
Setup Time, LOW
CS to WE
0
0
0
th(L)
Hold Time, LOW
CS to WE
6.0
7.5
6.0
tw(L)
WE Pulse Width, LOW
6.0
15.0
6.0
Units
Max
ns
ns
ns
4
ns
Ordering Information
The device number is used to form part of a simplified purchasing code where the package type and temperature range are
defined as follows:
74F
219
S
Temperature Range Family
74F e Commercial
54F e Military
C
X
Special Variations
QB e Military grade device with
environmental and burn-in
processing
X e Devices shipped in 13× reel
Device Type
Package Code
P e Plastic DIP
D e Ceramic DIP
F e Flatpak
L e Leadless Chip Carrier (LCC)
S e Small Outline SOIC JEDEC
SJ e Small Outline SOIC EIAJ
Temperature Range
C e Commercial (0§ C to a 70§ C)
L e Military (b55§ C to a 100§ C)
Physical Dimensions inches (millimeters)
20-Lead Ceramic Leadless Chip Carrier (L)
NS Package Number E20A
5
Physical Dimensions inches (millimeters) (Continued)
16-Lead Ceramic Dual-In-Line Package (D)
NS Package Number J16A
16-Lead (0.300× Wide) Molded Small Outline Package, JEDEC (S)
NS Package Number M16B
6
Physical Dimensions inches (millimeters) (Continued)
16-Lead (0.300× Wide) Molded Small Outline Package, EIAJ (SJ)
NS Package Number M16D
16-Lead (0.300× Wide) Molded Dual-In-Line Package (P)
NS Package Number N16E
7
54F/74F219 64-Bit Random Access Memory with TRI-STATE Outputs
Physical Dimensions inches (millimeters) (Continued)
16-Lead Ceramic Flatpak (F)
NS Package Number W16A
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