54F/74F219 64-Bit Random Access Memory with TRI-STATEÉ Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs are TRI-STATE and are in the high-impedance state whenever the Chip Select (CS) input is HIGH. The outputs are active only in the Read mode. This device is similar to the ’F189 but features non-inverting, rather than inverting, data outputs. Y Commercial Y Y Y Y TRI-STATE outputs for data bus applications Buffered inputs minimize loading Address decoding on-chip Diode clamped inputs minimize ringing Available in SOIC (300 mil only) Package Number Military Package Description N16E 16-Lead (0.300× Wide) Molded Dual-In-Line J16A 16-Lead Ceramic Dual-In-Line 74F219SC (Note 1) M16B 16-Lead (0.300× Wide) Molded Small Outline, JEDEC 74F219SJ (Note 1) M16D 16-Lead (0.300× Wide) Molded Small Outline, EIAJ 54F219FL (Note 2) W16A 16-Lead Cerpack 54F219LL (Note 2) E20A 20-Lead Ceramic Leadless Chip Carrier, Type C 74F219PC 54F219DL (Note 2) Note 1: Devices also available in 13× reel. Use suffix e SCX and SJX. Note 2: Military grade device with environmental and burn-in processing. Use suffix e DLQB, FLQB and LLQB. Logic Symbol Connection Diagrams Pin Assignment for DIP, SOIC and Flatpak Pin Assignment for LCC TL/F/9500–1 TL/F/9500 – 2 TL/F/9500 – 3 TRI-STATEÉ is a registered trademark of National Semiconductor Corporation. C1995 National Semiconductor Corporation TL/F/9500 RRD-B30M105/Printed in U. S. A. 54F/74F219 64-Bit Random Access Memory with TRI-STATE Outputs November 1994 Unit Loading/Fan Out 54F/74F Pin Names A0 – A3 CS WE D0 – D3 O 0 – O3 Description U.L. HIGH/LOW Input IIH/IIL Output IOH/IOL Address Inputs Chip Select Input (Active LOW) Write Enable Input (Active LOW) Data Inputs TRI-STATE Data Outputs 1.0/1.0 1.0/2.0 1.0/1.0 1.0/1.0 150/40 (33.3) 20 mA/b0.6 mA 20 mA/b1.2 mA 20 mA/b0.6 mA 20 mA/b0.6 mA b 3 mA/24 mA (20 mA) Function Table Inputs CS WE L L H L H X Operation Write Read Inhibit Condition of Outputs High Impedance True Stored Data High Impedance H e HIGH Voltage Level L e LOW Voltage Level X e Immaterial Block Diagram TL/F/9500 – 4 2 Absolute Maximum Ratings (Note 1) Current Applied to Output in LOW State (Max) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Storage Temperature b 65§ C to a 150§ C Ambient Temperature under Bias Junction Temperature under Bias Plastic b 55§ C to a 125§ C Note 2: Either voltage limit or current limit is sufficient to protect inputs. b 55§ C to a 175§ C b 55§ C to a 150§ C VCC Pin Potential to Ground Pin Recommended Operating Conditions b 0.5V to a 7.0V Free Air Ambient Temperature Military Commercial b 0.5V to a 7.0V Input Voltage (Note 2) Input Current (Note 2) Voltage Applied to Output in HIGH State (with VCC e 0V) Standard Output TRI-STATE Output twice the rated IOL (mA) Note 1: Absolute maximum ratings are values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. b 30 mA to a 5.0 mA b 55§ C to a 100§ C 0§ C to a 70§ C Supply Voltage Military Commercial b 0.5V to VCC b 0.5V to a 5.5V a 4.5V to a 5.5V a 4.5V to a 5.5V DC Electrical Characteristics Symbol 54F/74F Parameter Min VIH Input HIGH Voltage VIL Input LOW Voltage VCD Input Clamp Diode Voltage VOH Output HIGH Voltage Typ Units 2.0 54F 10% VCC 54F 10% VCC 74F 10% VCC 74F 10% VCC 74F 5% VCC 74F 5% VCC VCC Conditions Max V 0.8 V b 1.2 V 2.5 2.4 2.5 2.4 2.7 2.7 Recognized as a HIGH Signal Recognized as a LOW Signal Min IIN e b18 mA V Min IOH IOH IOH IOH IOH IOH IOL e 20 mA IOL e 24 mA e e e e e e b 1 mA b 3 mA b 1 mA b 3 mA b 1 mA b 3 mA VOL Output LOW Voltage 54F 10% VCC 74F 10% VCC 0.5 0.5 V Min IIH Input HIGH Current 54F 74F 20.0 5.0 mA Max VIN e 2.7V IBVI Input HIGH Current Breakdown Test 54F 74F 100 7.0 mA Max VIN e 7.0V ICEX Output HIGH Leakage Current 54F 74F 250 50 mA Max VOUT e VCC VID Input Leakage Test 74F V 0.0 IID e 1.9 mA All Other Pins Grounded IOD Output Leakage Circuit Current 74F 3.75 mA 0.0 VIOD e 150 mV All Other Pins Grounded IIL Input LOW Current b 0.6 b 1.2 mA Max VIN e 0.5V (An, WE, Dn) VIN e 0.5V (CS) IOZH Output Leakage Current 50 mA Max VOUT e 2.7V IOZL Output Leakage Current b 50 mA Max VOUT e 0.5V IOS Output Short-Circuit Current b 150 mA Max VOUT e 0V IZZ Bus Drainage Test 500 mA 0.0V VOUT e 5.25V ICC Power Supply Current 55 mA Max 4.75 b 60 37 3 AC Electrical Characteristics Symbol Parameter 74F 54F 74F TA e a 25§ C VCC e a 5.0V CL e 50 pF TA e a 100§ C VCC e Mil CL e 50 pF TA, VCC e Com CL e 50 pF Min Typ Max Min Max Min Max tPLH tPHL Access Time, HIGH or LOW An to On 10.0 8.0 18.5 13.5 26.0 19.0 9.0 8.0 32.0 23.0 10.0 8.0 27.0 20.0 tPZH tPZL Access Time, HIGH or LOW CS to On 3.5 5.0 6.0 9.0 8.5 13.0 3.5 5.0 10.5 15.0 3.5 5.0 9.5 14.0 tPHZ tPLZ Disable Time, HIGH or LOW CS to On 2.0 3.0 4.0 5.5 6.0 8.0 2.0 2.5 8.0 10.0 2.0 3.0 7.0 9.0 tPZH tPZL Write Recovery Time HIGH or LOW, WE to On 6.5 6.5 20.0 11.0 28.0 15.5 6.5 6.5 37.5 17.5 6.5 6.5 29.0 16.5 tPHZ tPLZ Disable Time, HIGH or LOW WE to On 4.0 5.0 7.0 9.0 10.0 13.0 3.5 5.0 12.0 15.0 4.0 5.0 11.0 14.0 Units ns ns ns AC Operating Requirements Symbol Parameter 74F 54F 74F TA e a 25§ C VCC e a 5.0V TA e a 100§ C VCC e Mil TA, VCC e Com Min Min Min Max Max ts(H) ts(L) Setup Time, HIGH or LOW An to WE 0 0 0 0 0 0 th(H) th(L) Hold Time, HIGH or LOW An to WE 2.0 2.0 2.0 2.0 2.0 2.0 ts(H) ts(L) Setup Time, HIGH or LOW Dn to WE 10.0 10.0 11.0 11.0 10.0 10.0 th(H) th(L) Hold Time, HIGH or LOW Dn to WE 0 0 2.0 2.0 0 0 ts(L) Setup Time, LOW CS to WE 0 0 0 th(L) Hold Time, LOW CS to WE 6.0 7.5 6.0 tw(L) WE Pulse Width, LOW 6.0 15.0 6.0 Units Max ns ns ns 4 ns Ordering Information The device number is used to form part of a simplified purchasing code where the package type and temperature range are defined as follows: 74F 219 S Temperature Range Family 74F e Commercial 54F e Military C X Special Variations QB e Military grade device with environmental and burn-in processing X e Devices shipped in 13× reel Device Type Package Code P e Plastic DIP D e Ceramic DIP F e Flatpak L e Leadless Chip Carrier (LCC) S e Small Outline SOIC JEDEC SJ e Small Outline SOIC EIAJ Temperature Range C e Commercial (0§ C to a 70§ C) L e Military (b55§ C to a 100§ C) Physical Dimensions inches (millimeters) 20-Lead Ceramic Leadless Chip Carrier (L) NS Package Number E20A 5 Physical Dimensions inches (millimeters) (Continued) 16-Lead Ceramic Dual-In-Line Package (D) NS Package Number J16A 16-Lead (0.300× Wide) Molded Small Outline Package, JEDEC (S) NS Package Number M16B 6 Physical Dimensions inches (millimeters) (Continued) 16-Lead (0.300× Wide) Molded Small Outline Package, EIAJ (SJ) NS Package Number M16D 16-Lead (0.300× Wide) Molded Dual-In-Line Package (P) NS Package Number N16E 7 54F/74F219 64-Bit Random Access Memory with TRI-STATE Outputs Physical Dimensions inches (millimeters) (Continued) 16-Lead Ceramic Flatpak (F) NS Package Number W16A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. 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