TSM2305CX
TSM2305
20V P-Channel MOSFET
SOT-23
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
Pin Definition:
1. Gate
2. Source
3. Drain
-20
ID (A)
55 @ VGS =-4.5V
-3.2
80 @ VGS =-2.5V
-2.7
130 @ VGS =-1.8V
-2.0
Block Diagram
Features
●
Advance Trench Process Technology
●
High Density Cell Design for Ultra Low On-resistance
Application
●
Battery Management
●
High Speed Switch
Ordering Information
Part No.
TSM2305CX RFG
Package
Packing
SOT-23
3Kpcs / 7” Reel
Note: “G” denotes Halogen Free Product.
P-Channel MOSFET
Absolute Maximum Rating (TA=25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±8
V
ID
-3.2
A
IDM
-10
A
IS
-1
A
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
a,b
TA=25°C
1.25
PD
TA=75°C
Operating Junction Temperature
W
0.8
TJ
+150
°C
TJ, TSTG
-55 to +150
°C
Symbol
Limit
Unit
Junction to Case Thermal Resistance
RӨJC
80
°C/W
Junction to Ambient Thermal Resistance (PCB mounted)
RӨJA
150
°C/W
Operating Junction and Storage Temperature Range
Thermal Performance
Parameter
Notes:
a. Pulse width limited by the Maximum junction temperature
2
b. Surface Mounted on a 1 in pad of 2oz Cu, t ≤ 10 sec.
Document Number: DS_P0000046
1
Version: E15
TSM2305
20V P-Channel MOSFET
Electrical Specifications (Ta = 25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
-20
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
-0.45
-0.7
-1
V
Gate Body Leakage
VGS = ±8V, VDS = 0V
IGSS
--
--
±100
nA
VDS = -16V, VGS = 0V
IDSS
µA
Zero Gate Voltage Drain Current
VGS = -4.5V, ID = -3.2A
Drain-Source On-State Resistance
VGS = -2.5V, ID = -2.7A
RDS(ON)
VGS = -1.8V, ID = -2.0A
--
--
1.0
--
44
55
--
65
80
--
90
130
mΩ
Diode Forward Voltage
b
Dynamic
IS = -1A, VGS = 0V
VSD
--
-0.8
-1.3
V
Gate Resistance
VGS = VDS =0V, f=1MHz
Rg
--
10
--
Ω
Qg
--
10
20
Qgs
--
0.7
--
Qgd
--
4
--
Ciss
--
990
--
Coss
--
125
--
Crss
--
100
--
td(on)
--
12
24
tr
--
23
50
td(off)
--
50
100
--
18
35
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
VDS = -10V, ID = -3.2A,
VGS = -4.5V
VDS = -10V, VGS = 0V,
f = 1.0MHz
nC
pF
b.c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VDD = -10V, RL = 15Ω,
ID = -1A, VGEN = -4.5V,
RG = 6Ω
Turn-Off Fall Time
tf
Notes:
a. pulse test: PW ≤ 300µS, duty cycle ≤ 2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Document Number: DS_P0000046
2
nS
Version: E15
TSM2305
20V P-Channel MOSFET
Electrical Characteristics Curve (Ta = 25°C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
Document Number: DS_P0000046
3
Version: E15
TSM2305
20V P-Channel MOSFET
Electrical Characteristics Curve (Ta = 25°C, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Capacitance
Normalized Thermal Transient Impedance, Junction-to-Ambient
Document Number: DS_P0000046
4
Version: E15
TSM2305
20V P-Channel MOSFET
SOT-23 Mechanical Drawing
DIM
A
A1
B
C
D
E
F
G
H
I
J
SOT-23 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
0.95 BSC
0.037 BSC
1.9 BSC
0.074 BSC
2.60
3.00
0.102
0.118
1.40
1.70
0.055
0.067
2.80
3.10
0.110
0.122
1.00
1.30
0.039
0.051
0.00
0.10
0.000
0.004
0.35
0.50
0.014
0.020
0.10
0.20
0.004
0.008
0.30
0.60
0.012
0.024
5º
10º
5º
10º
Marking Diagram
05 = Device Code
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
S =May T =Jun U =Jul
V =Aug
W =Sep X =Oct
Y =Nov Z =Dec
L = Lot Code
Document Number: DS_P0000046
5
Version: E15
TSM2305
20V P-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_P0000046
6
Version: E15
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