357 KB

357 KB
The following document contains information on Cypress products.
FUJITSU MICROELECTRONICS
DATA SHEET
DS04-27239-1Ea
ASSP For Power Supply Applications
(General-Purpose DC/DC Converter)
3-ch DC/DC Converter IC
MB39A112
■ DESCRIPTION
The MB39A112 is a 3-channel DC/DC converter IC using pulse width modulation (PWM) , and the MB39A112 is
suitable for down-conversion.
3-channel is built in TSSOP-20P package. Each channel can be controlled and soft-start.
The MB39A112 contains a constant voltage bias circuit for output block, capable of implementing an efficient
high-frequency DC/DC converter. It is ideal for built-in power supply such as ADSL modems.
■ REATURES
• Supports for down-conversion (CH1 to CH3)
• Power supply voltage range
: 7 V to 25 V
• Error amplifier threshold voltage : 1.00 V ± 1% (CH1)
: 1.23 V ± 1% (CH2, CH3)
• Oscillation frequency range
: 250 kHz to 2.6 MHz
• Built-in soft-start circuit independent of loads
• Built-in timer-latch short-circuit protection circuit
• Built-in totem-pole type output for P-channel MOS FET devices
• Built-in constant voltage (VCCO − 5 V) bias circuit for output block
■ PACKAGE
20-pin plastic TSSOP
(FPT-20P-M06)
Copyright©2003-2008 FUJITSU MICROELECTRONICS LIMITED All rights reserved
2003.11
MB39A112
■ PIN ASSIGNMENT
(TOP VIEW)
CS1 : 1
20 : VCCO
−INE1 : 2
19 : OUT1
FB1 : 3
18 : OUT2
VCC : 4
17 : OUT3
RT : 5
16 : VH
CT : 6
15 : GNDO
GND : 7
14 : CSCP
FB2 : 8
13 : FB3
−INE2 : 9
12 : −INE3
CS2 : 10
11 : CS3
(FPT-20P-M06)
2
MB39A112
■ PIN DESCRIPTION
Pin No.
Symbol
I/O
Descriptions
1
CS1

2
− INE1
I
CH1 error amplifer inverted input terminal.
3
FB1
O
CH1 error amplifer output terminal.
4
VCC

Control circuit power supply terminal.
5
RT

Triangular-wave oscillation frequency setting resistor connection terminal.
6
CT

Triangular-wave oscillation frequency setting capacitor connection terminal.
7
GND

Ground terminal.
8
FB2
O
CH2 error amplifier output terminal.
9
− INE2
I
CH2 error amplifier inverted input terminal.
10
CS2

CH2 soft-start setting capacitor connection terminal.
11
CS3

CH3 soft-start setting capacitor connection terminal.
12
− INE3
I
CH3 error amplifier inverted input terminal.
13
FB3
O
CH3 error amplifier output terminal.
14
CSCP

Timer-latch short-circuit protection capacitor connection terminal.
15
GNDO

Ground terminal.
16
VH
O
Power supply terminal for driving output circuit. (VH = VCCO − 5 V) .
17
OUT3
O
CH3 external Pch MOS FET gate driving terminal.
18
OUT2
O
CH2 external Pch MOS FET gate driving terminal.
19
OUT1
O
CH1 external Pch MOS FET gate driving terminal.
20
VCCO

Power supply terminal for driving output circuit. (Connect to same potential
as VCC terminal).
CH1 soft-start setting capacitor connection terminal.
3
MB39A112
■ BLOCK DIAGRAM
Threshold voltage
1.0 V ± 1%
−INE1 2
CH1
VREF
10 µA
−
+
+
CS1 1
L
priority
Error
Amp1
+
20 VCCO
PWM
Comp.1
Drive1
−
19 OUT1
Pch
1.0 V
FB1 3
IO = 150 mA
Threshold voltage
1.23 V ± 1%
−INE2 9
CH2
VREF
10 µA
−
+
+
CS2 10
L
priority
Error
Amp2
+
PWM
Comp.2
Drive2
−
18 OUT2
Pch
1.23 V
FB2 8
IO = 150 mA
Threshold voltage
1.23 V ± 1%
−INE3 12
CH3
VREF
10 µA
−
+
+
CS3 11
L
priority
Error
Amp3
+
PWM
Comp.3
Drive3
17 OUT3
Pch
−
1.23 V
FB3 13
IO = 150 mA
H
priority
SCP
Comp.
VCCO − 5 V
+
+
+
−
16 VH
Bias
Voltage
VH
2.7 V
15 GNDO
SCP
Error Amp Power Supply
SCP Comp. Power Supply
H: at SCP
CSCP 14
4 VCC
2.5 V
H: UVLO release
2.0 V
ErrorAmp Reference
1.0 V/1.23 V
bias
3.5 V
OSC
UVLO
VREF
VR
GND
5
RT
4
6
CT
7
GND
Power
ON/OFF
CTL
MB39A112
■ ABSOLUTE MAXIMUM RATINGS
Parameter
Power supply voltage
Symbol
Vcc
Rating
Conditions
Unit
Min
Max
VCC, VCCO terminal

28
V
Output current
Io
OUT1, OUT2, OUT3 terminal

20
mA
Peak output current
IOP
Duty ≤ 5 % (t = 1/fosc × Duty)

400
mA
Power dissipation
PD
Ta ≤ + 25 °C

1280*
mW
− 55
+ 125
°C
Storage temperature

TSTG
* : The package is mounted on the dual-sided epoxy board (10 cm × 10 cm) .
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Conditions
Value
Min
Typ
Max
Unit
Power supply voltage
Vcc
VCC, VCCO terminal
7
12
25
V
Input voltage
VIN
− INE terminal
0
-
Vcc − 1.8
V
IO
OUT1, OUT2, OUT3 terminal
− 15

15
mA
IVH
VH terminal
0

30
mA
Output current
fosc

250
1200
2600
kHz
Timing capacitor
CT

22
100
1000
pF
Timing resistor
RT

4.7
10
22
kΩ
VH terminal capacitor
CVH
VH terminal

0.1
1.0
µF
Soft-start capacitor
CS
CS1, CS2, CS3 terminal

0.1
1.0
µF
CSCP terminal

0.01
1.0
µF
− 30
+ 25
+ 85
°C
Oscillation frequency
Short-circuit detection
capacitor
Operating ambient
temperature
CSCP
Ta

WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
representatives beforehand.
5
MB39A112
■ ELECTRICAL CHARACTERISTICS
(VCC = VCCO = 12 V, Ta = + 25 °C)
Parameter
SymPin No.
bol
Conditions
VCC =
Value
Unit
Min
Typ
Max
6.35
6.55
6.75
V
VTH
4
VHYS
4


0.15

V
Threshold voltage
VTH
14

0.67
0.72
0.77
V
Input source current
ICSCP
14

− 1.4
− 1.0
− 0.6
µA
Reset voltage
VRST
4
6.2
6.4
6.6
V
Triangular
Wave
Oscillator
Block [OSC]
Oscillation
frequency
fosc
17 to 19
1080
1200
1320
kHz
Soft-start
Block
[CS1, CS2,
CS3]
Charge current
ICS
1, 10,
11
− 14
− 10
−6
µA
Threshold voltage
VTH
2
FB1 = 2.25 V
0.99
1.00
1.01
V
Input bias current
IB
2
− INE1 = 0 V
− 250
− 63

nA
Voltage gain
AV
3
DC
60
100

dB
Frequency band
width
BW
3
AV = 0dB

1.5*

MHz
VOH
3

3.2
3.4

V
VOL
3


40
200
mV
Undervoltage Threshold voltage
Lockout
Protection
Circuit Block Hysteresis width
[UVLO]
Short-circuit
Protection
Circuit Block
[SCP]
Error Amp
Block (CH1)
[Error Amp1]
Output voltage
Error Amp
Block
(CH2, CH3)
[Error Amp2,
Error Amp3]
VCC =
CT = 100 pF,
RT = 10 kΩ

Output source current ISOURCE
3
FB1 = 2.25 V

−2
−1
mA
Output sink current
ISINK
3
FB1 = 2.25 V
150
250

µA
Threshold voltage
VTH
9, 12
FB2 = FB3 = 2.25 V
1.218
1.230
1.242
V
Input bias current
IB
9, 12
− INE2 = − INE3 = 0 V
− 250
− 63

nA
Voltage gain
AV
8, 13
DC
60
100

dB
Frequency band
width
BW
8, 13
AV = 0 dB

1.5*

MHz
VOH
8, 13

3.2
3.4

V
VOL
8, 13


40
200
mV
Output voltage
Output source current ISOURCE
8, 13
FB2 = FB3 = 2.25 V

−2
−1
mA
Output sink current
8, 13
FB2 = FB3 = 2.25 V
150
250

µA
ISINK
* : Standard design value
(Continued)
6
MB39A112
(Continued)
(VCC = VCCO = 12 V, Ta = + 25 °C)
Parameter
PWM
Comparator
Threshold voltage
Block
[PWM Comp.]
Bias Voltage
Block [VH]
Output Block
[Drive]
SymPin No.
bol
Max
17 to 19 Duty cycle = 0 %
1.9
2.0

V
17 to 19 Duty cycle = 100 %

2.5
2.6
V
VCCO −
5.5
VCCO −
5.0
VCCO −
4.5
V
Duty ≤ 5 %
17 to 19 OUT1 = OUT2 =
OUT3 = 7 V

− 150*

mA
ISINK
Duty ≤ 5 %
17 to 19 OUT1 = OUT2 =
OUT3 = 12 V

150*

mA
ROH
17 to 19
OUT1 = OUT2 =
OUT3 = − 15 mA

13
19.5
Ω
ROL
17 to 19
OUT1 = OUT2 =
OUT3 = 15 mA

10
15
Ω
ICC
4

6
9
mA
VT0
VT100
VH
Output source
current
ISOURC
Power supply
current
Unit
Typ
E
16
Output ON resistor
General
Value
Min
Output voltage
Output sink current
Conditions


* : Standard design value
7
MB39A112
■ TYPICAL CHARCTERISTICS
Power supply current ICC (mA)
Power Supply Current vs. Power Supply Voltage
10
Ta = +25 °C
RT = OPEN
8
6
4
2
0
0
5
10
15
20
25
Power supply voltage VCC (V)
Error Amp (ERR2, ERR3)
Threshold Voltage vs. Ambient Temperature
2.0
2.0
VCC = 12 V
FB1 = 0 mA
1.5
1.0
0.5
0.0
−0.5
−1.0
−1.5
−2.0
−40 −20
0
20
40
60
80 100
Threshold voltage ∆VTH (%)
Threshold voltage ∆VTH (%)
Error Amp (ERR1)
Threshold Voltage vs. Ambient Temperature
1.0
0.5
0.0
−0.5
−1.0
−1.5
−2.0
−40 −20
CT = 22 pF
CT = 100 pF
CT = 1000 pF CT = 390 pF
100
10
10
100
Timing resistor RT (kΩ)
1000
Triangular wave oscillation frequency
fosc (kHz)
Triangular wave oscillation frequency
fosc (kHz)
Ta = +25 °C
VCC = 12 V
1
20
40
60
80
100
Triangular Wave Oscillation Frequency vs.
Timing Capacitor
Triangular Wave Oscillation Frequency vs.
Timing Resistor
1000
0
Ambient temperature Ta ( °C)
Ambient temperature Ta ( °C)
10000
VCC = 12 V
FB2(3) = 0 mA
1.5
10000
Ta = +25 °C
VCC = 12 V
1000
RT = 4.7 kΩ
RT = 22 kΩ
100
10
10
100
RT = 10 kΩ
1000
10000
Timing capacitor CT (pF)
(Continued)
8
MB39A112
2.8
Ta = +25 °C
VCC = 12 V
CT = 100 pF
2.6
Upper limit
2.4
2.2
Lower limit
2.0
1.8
0
500 1000 1500 2000 2500 3000
Triangular wave oscillation frequency
fosc (kHz)
Triangular Wave Upper/Lower Limit Voltage vs.
Ambient Temperature
Triangular wave upper/lower limit voltage
VCT (V)
Triangular wave upper/lower limit voltage
VCT (V)
Triangular Wave Upper/Lower Limit Voltage vs.
Triangular Wave Oscillation Frequency
1300
1250
1200
1150
1100
1050
1000
−40 −20
0
20
40
60
80
Ambient temperature Ta ( °C)
100
Triangular wave oscillation frequency
fosc (kHz)
Triangular wave oscillation frequency
fosc (kHz)
VCC = 12 V
RT = 10 kΩ
CT = 100 pF
1350
2.6
VCC = 12 V
RT = 10 kΩ
CT = 100 pF
Upper limit
2.4
2.2
Lower limit
2.0
1.8
−40 −20
0
20
40
60
80
100
Ambient temperature Ta ( °C)
Triangular Wave Oscillation Frequency vs.
Power Supply Voltage
Triangular Wave Oscillation Frequency vs.
Ambient Temperature
1400
2.8
1400
Ta = +25 °C
RT = 10 kΩ
CT = 100 pF
1350
1300
1250
1200
1150
1100
1050
1000
0
5
10
15
20
25
30
Power supply voltage VCC (V)
(Continued)
9
MB39A112
(Continued)
Error Amp (CH1)
Gain, Phase vs. Frequency
Ta = +25 °C
VCC = 12 V
40
AV
30
240 kΩ
90
10
0
0
−10
−90
−20
Phase ϕ (deg)
ϕ
20
Gain AV (dB)
180
10 kΩ
1 µF
+
IN
2
−
1
+
+
2.4 kΩ
10 kΩ
3.5 V
3
OUT
Error Amp1
1.0 V
−30
−180
−40
100
1k
10 k
100 k
1M
10 M
Frequency f (Hz)
Error Amp (CH2, CH3)
Gain, Phase vs. Frequency
40
AV
30
Ta = +25 °C
VCC = 12 V
240 kΩ
ϕ
10 kΩ
1 µF
+
10
0
0
−10
−90
−20
Phase ϕ (deg)
90
20
Gain AV (dB)
180
IN
2.4 k
10 kΩ
9
(12)
10
(11)
3.5 V
−
+
+
1.23 V
−30
−180
−40
100
1k
10 k
100 k
1M
10 M
Frequency f (Hz)
Maximum power dissipation PD (mW)
Maximum Power Dissipation vs. Ambient Temperature
1400
1300
1280
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
−40
−20
0
20
40
60
Ambient temperature Ta ( °C)
10
80
100
8
OUT
(13)
Error Amp2
(Error Amp3)
MB39A112
■ FUNCTION
1. DC/DC Converter Function
(1) Triangular Wave Oscillator Block (OSC)
The triangular wave oscillator incorporates a timing capacitor and a timing resistor connected respectively to
the CT terminl (pin 6) and RT terminl (pin 5) to generate triangular oscillation waveform amplitude of 2.0 V to
2.5 V. The triangular waveforms are input to the PWM comparator in the IC.
(2) Error Amplifier Block (Error Amp1, Error Amp2, Error Amp3)
The error amplifier detects the DC/DC converter output voltage and outputs PWM control signals. In addition,
an arbitrary loop gain can be set by connecting a feedback resistor and capacitor from the output terminal to
inverted input terminal of the error amplifier, enabling stable phase compensation to the system.
Also, it is possible to prevent rush current at power supply start-up by connecting a soft-start capacitor with the
CS1 terminl (pin 1) , CS2 terminl (pin10) and CS3 terminl (pin 11) which are the non-inverted input terminal for
Error Amp. The use of error Amp for soft-start detection makes it possible for a system to operate on a fixed
soft-start time that is independent of the output load on the DC/DC converter.
(3) PWM Comparator Block (PWM Comp.)
The PWM comparator is a voltage-to-pulse width modulator that controls the output duty depending on the input/
output voltage.
The comparator keeps output transistor on while the error amplifier output voltage remain higher than the
triangular wave voltage.
(4) Output Block
The output blobk is in the totem pole configulation, capable of driving an external P-channel MOS FET.
(5) Bias Voltage Block (VH)
This bias voltage circuit outputs VCC − 5 V (Typ) as minimum potential of the output circuit.
2. Protective Function
(1) Timer Latch Short-circuit Protection Circuit (SCP)
Each channel has a short-circuit detection comparator (SCP Comp.) which constantly compares the error Amp.
output level to the reference voltage.
While DC/DC converter load conditions are stable on all channels, the short-circuit detection comparator output
remains at “L”, and the CSCP terminal is held at “L” level.
If the load condition on a channel changes rapidly due to a short-circuit of the load, causing the output voltage
to drop, the output of the short-circuit detection comparator on that channel goes to “H” level. This causes the
external short-circuit protection capacitor CSCP connected to the CSCP terminal (pin 14) to be charged.
When the capacitor CSCP is charged to the threshold voltage (VTH =: 0.72 V) , the latch is set and the external
FET is turned off (dead time is set to 100 %) . At this point, the latch input is closed and the CSCP terminal is
held at “L” level.
The latch applied by the timer-latch short-circuit protection circuit can be reset by recycling the power supply
(VCC) (See “■ SETTING TIME CONSTANT FOR TIMER-LATCH SHORT-CIRCUIT PROTECTION CIRCUIT”) .
11
MB39A112
(2) Undervoltage Lockout Protection Circuit Block (UVLO)
The transient state or a momentary decrease in supply voltage, which occurs when the power supply is turned
on, may cause the IC to malfunction, resulting in breakdown or degradation of the system. To prevent such
malfunctions, under voltage lockout protection circuit detects a decrease in internal reference voltage with respect
to the power supply voltage, turns off the output transistor, and sets the dead time to 100% while holding the
CSCP terminal (pin 14) at the “L” level.
The circuit restores the output transistor to normal when the supply voltage reaches the threshold voltage of the
undervoltage lockout protection circuit.
(3) Protection Circuit Operating Function Table
This table refers to output condition when each protection circuit is operating.
CH1
CH2
Operating circuit
OUT1
OUT2
OUT3
Short-circuit protection circuit
H
H
H
Under-voltage lockout circuit
H
H
H
The latch can be reset as follows after the short-circuit protection circuit is actuated.
Recycling VCC resets the latch whenever the short-circuit protection circuit has been actuated.
12
CH3
MB39A112
■ SETTING THE OUTPUT VOLTAGE
• CH1
VO
R1
Error Amp
2
−INE1
−
VO (V) =
+
+
R2
1.00
R2
(R1 + R2)
1.00 V
CS1
1
• CH2, CH3
VO
R1
(−INE3)
12
9
−INE2
Error Amp
−
+
+
R2
VO (V) =
1.23
R2
(R1 + R2)
1.23 V
(CS3)
CS2
11
10
■ SETTING THE TRIANGULAR OSCILLATION FREQUENCY
The triangular oscillation frequency is determined by the timing capacitor (CT) connected to the CT terminal
(pin 6) and the timing resistor (RT) connected to the RT terminal (pin 5) .
Triangular oscillation frequency : fosc
fosc (kHz)=:
1200000
CT (pF) • RT (kΩ)
13
MB39A112
■ SETTING THE SOFT-START AND DISCHARGE TIMES
To prevent rush currents when the IC is turned on, you can set a soft-start by connecting soft-start capacitors
(CS1, CS2 and CS3) to the CS1 terminal (pin 1) for channel 1, CS2 terminal (pin 10) for channel 2 and CS3 terminal
(pin 11) for channel 3 respectively.
Setting each control terminal (CTLX) from “H” to “L” starts charging the external soft-start capacitors (CS1, CS2
and CS3) connected to the CS1, CS2 and CS3 terminal at about 10 µA. The DC/DC converter output voltage
rises in proportion to the CS terminal voltage. Also, soft-start time is obtained by the following formulas.
Soft-start time : ts (time to output 100%)
CH1
: ts1[s] =: 0.100 × CS1[µF]
CH2
: ts2[s] =: 0.123 × CS2[µF]
CH3
: ts3[s] =: 0.123 × CS3[µF]
• Soft-start circuit
−INE1
(−INE2)
(−INE3)
L
priority
VO
CS1
(CS2)
(CS3)
VREF
10 µA
CH1 ON/OFF signal
−
+
+
Error
Amp
(L : ON, H : OFF)
FB1
(FB2)
(FB3)
CTLX
1.23 V
/1.0 V
H : at SCP
SCP
UVLO
H: UVLO release
• Soft-start operation
CS terminal voltage
=: 3.4 V
Error Amp. reference voltage
=: 1.23 V/
1.00 V
=: 0 V
t
Soft-start time ts
H
CTLX signal
L
t
14
MB39A112
■ TREATMENT WITHOUT USING CS TERMINAL
When not using the soft-start function, open the CS1 terminal (pin 1) , CS2 terminal (pin 10) and CS3 terminal
(pin 11) .
• Without setting soft-start tme
“Open”
1 CS1
“Open”
10 CS2
“Open”
11 CS3
15
MB39A112
■ SETTING TIME CONSTANT FOR TIMER-LATCH SHORT-CIRCUIT PROTECTION CIRCUIT
Each channel uses the short-circuit detection comparator (SCP Comp.) to always compare the error amplifier’s
output level to the reference voltage.
While DC/DC converter load conditions are stable on all channels, the short-circuit detection comparator output
remains at “L” level, and the CSCP terminal (pin 14) is held at “L” level.
If the load condition on a channel changes rapidly due to a short-circuit of the load, causing the output voltage
to drop, the output of the short-circuit detection comparator goes to “H” level. This causes the extemal shortcircuit protection capacitor CSCP connected to the CSCP terminal to be charged at 1 µA.
Short-circuit detection time : tcscp
tcscp[s] =: 0.72 × CSCP [µF]
When the capacitor CSCP is charged to the threshold voltage (VTH =: 0.72 V) , the latch is set and the external FET
is turned off (dead time is set to 100 %) . At this time, the latch input is closed and the CSCP terminal
(pin 14) is held at “L” level.
If any of CH1 to CH3 detects a short circuit, all the channels are stopped.
• Timer-latch short-circuit protection circuit
VO
R1
−INE1
(−INE2)
(−INE3)
VREF
10 µA
R2
−
+
+
CS1
(CS2)
(CS3)
Error
Amp
1.23 V
/1.0 V
FB1
(FB2)
(FB3)
SCP
Comp.
+
+
+
−
[SCP]
2.7 V
1 µA
H: UVLO release
CSCP
14
VCC
S
R
Latch
UVLO
H: at SCP
16
MB39A112
■ TREATMENT WITHOUT USING CSCP TERMINAL
When not using the timer-latch short-circuit protection circuit, connect the CSCP terminal (pin 14) to GND with
the shortest distance.
• Treatment without using CSCP terminal
14 CSCP
7 GND
17
MB39A112
■ I/O EQUIVALENT CIRCUIT
<<Triangular wave oscillator block
(CT) >>
<<Triangular wave oscillator block
(RT) >>
<<Short-circuit detection block>>
VCC 4
VCC
VREF
(3.5 V)
ESD
protection
element
ESD
protection
element
2 kΩ
VCC
VREF
(3.5 V)
VREF
(3.5 V)
1.2 V
CT 6
−
14 CSCP
ESD
protection
element
GND 7
+
5 RT
GND
GND
<<Error amplifier block (CH1) >>
<<Soft-start block>>
VCC
VCC
VREF
(3.5 V)
VREF
(3.5 V)
CSX
−INE1 2
CS1
1.00 V
3 FB1
GND
GND
<<PWM comparator block>>
<<Error amplifier block (CH2, CH3) >>
VCC
VCC
VREF
(3.5 V)
CSX
1.23 V
FBX
FBX
GND
GND
<<Bias voltage block>>
VCC
<<Output block>>
VCCO
VCCO 20
OUTX
16 VH
VH
GND
X : Each channel No.
18
GNDO
GNDO 15
CT
MB39A112
■ APPLICATION EXAMPLE
R6
R7
2.2 kΩ 18 kΩ
A
−INE1
CH1
ON/OFF signal
10 µA
CS1
CTL1
C8
0.022 µF
R11 R12
4.7 kΩ 56 kΩ
B
R9
820 Ω
FB1
−INE2
L
priority
CTL2
R15 R16
680 Ω 30 kΩ
VIN
(12 V)
C
CTL3
FB2
−
+
+
L
priority
L2
Q2
CH2
Error
Amp2
+
PWM
Comp.2
Drive2
−
18
Pch
C3
2.2 µF
OUT2
C4
4.7 µF
D2
1.23 V
8
Stepdown
C
−INE3
Threshold voltage
1.23 V ± 1 %
12
−
+
+
11
R18
1 kΩ
L
priority
VO3
(5.0 V)
IO3 = 0.15 ∼ 0.3 A
10 µH
Error
Amp3
+
PWM
Comp.3
Drive3
17
Pch
−
C5
2.2 µF
OUT3
D3
C6
4.7 µF
1.23 V
13
C16
0.1 µF
IO = 150 mA
H
priority
VCCO − 5 V
+
+
+
−
16
15
H: UVLO release
2.0 V
ErrorAmp Reference
1.0 V/1.23 V
bias
3.5 V
OSC
GNDO
Error Amp Power Supply
SCP Comp. Power Supply
H: at SCP
14
2.5 V
VH
Bias
Voltage
VH
SCP
CSCP
L3
Q3
CH3
VREF
10 µA
FB3
VO2
(3.3 V)
IO2 = 0.15 ∼ 1 A
3.3 µH
2.7 V
C15
1000 pF
Stepdown
B
Threshold voltage
1.23 V ± 1 %
SCP
Comp.
Charge
current
1 µA
C2
4.7 µF
D1
IO = 150 mA
CS3
C14
0.01 µF
C1
2.2 µF
OUT1
IO = 150 mA
10
R14
820 Ω
(L : ON, H : OFF)
C13
0.1
µF
19
Pch
VO1
(1.2 V)
IO1 = 0.8 ∼ 1.5 A
2 µH
1.0 V
9
R17
10 kΩ
CH3
ON/OFF signal
Drive1
−
L1
Q1
VCCO
C17
0.1 µF
PWM
Comp.1
3
10 µA
CS2
C11
0.01 µF
+
20
VREF
(L : ON, H : OFF)
C12
0.1
µF
Error
Amp1
−
+
+
1
R13
36 kΩ
CH2
ON/OFF signal
CH1
VREF
(L : ON, H : OFF)
C7
0.1
µF
Threshold voltage
1.0 V ± 1 %
2
R8
100 kΩ
Stepdown
A
UVLO
VREF
VR
4
VCC
C9
0.1 µF
Power
ON/OFF
CTL
GND
5
RT
R10
5.1 kΩ
6
7
CT
GND
C10
100 pF
19
MB39A112
■ PARTS LIST
COMPONENT
ITEM
SPECIFICATION
VENDOR
PARTS No.
Q1, Q2,
Q3
Pch FET
Pch FET
VDS = − 30 V, ID = − 2.0 A
VDS = − 30 V, ID = − 1.0 A
SANYO
SANYO
MCH3312
MCH3308
D1, D2
D3
Diode
Diode
VF = 0.55 V (Max) , at IF = 2 A
VF = 0.4 V (Max) , at IF = 0.5 A
SANYO
SANYO
SBE001
SBE005
L1
L2
L3
Inductor
Inductor
Inductor
2 µH
3.3 µH
10 µH
3 A, 16 mΩ
2.57 A, 21.4 mΩ
1.49 A, 41.2 mΩ
TOKO
TOKO
TOKO
A916CY-2R0M
A916CY-3R3M
A916CY-100M
C1, C3, C5
C2, C4, C6
C7, C9, C12
C8
C10
C11, C14
C13, C16, C17
C15
Ceramics Condenser
Ceramics Condenser
Ceramics Condenser
Ceramics Condenser
Ceramics Condenser
Ceramics Condenser
Ceramics Condenser
Ceramics Condenser
2.2 µF
4.7 µF
0.1 µF
0.022 µF
100 pF
0.01 µF
0.1 µF
1000 pF
25 V
10 V
50 V
50 V
50 V
50 V
50 V
50 V
TDK
TDK
TDK
TDK
TDK
TDK
TDK
TDK
C3216JB1E225K
C3216JB1A475M
C1608JB1H104K
C1608JB1H223K
C1608CH1H101J
C1608JB1H103K
C1608JB1H104K
C1608JB1H102K
R6
R7
R8
R9
R10
R11
R12
R13
R14
R15
R16
R17
R18
Resistor
Resistor
Resistor
Resistor
Resistor
Resistor
Resistor
Resistor
Resistor
Resistor
Resistor
Resistor
Resistor
2.2 kΩ
18 kΩ
100 kΩ
820 Ω
5.1 kΩ
4.7 kΩ
56 kΩ
36 kΩ
820 Ω
680 Ω
30 kΩ
10 kΩ
1 kΩ
0.5 %
0.5 %
0.5 %
0.5 %
0.5 %
0.5 %
0.5 %
0.5 %
0.5 %
0.5 %
0.5 %
0.5 %
0.5 %
ssm
ssm
ssm
ssm
ssm
ssm
ssm
ssm
ssm
ssm
ssm
ssm
ssm
RR0816P-222-D
RR0816P-183-D
RR0816P-104-D
RR0816P-821-D
RR0816P-512-D
RR0816P-472-D
RR0816P-563-D
RR0816P-363-D
RR0816P-821-D
RR0816P-681-D
RR0816P-303-D
RR0816P-103-D
RR0816P-102-D
Note : SANYO
TOKO
TDK
ssm
20
: SANYO Electric Co., Ltd.
: TOKO Inc.
: TDK Corporation
: SUSUMU Co., Ltd.
MB39A112
■ SELECTION OF COMPONENTS
• Pch MOS FET
The Pch MOS FET for switching use should be rated for at least 20 % or more than the maximum input voltage.
To minimize continuity loss, use a FET with low RDS (ON) between the drain and source. For high input voltage
and high frequency operation, on-cycle switching loss will be higher so that power dissipation must be considered.
In this application, the SANYO MCH3312 and MCH3308 are used. Continuity loss, on/off-cycle switching loss
and total loss are determined by the following formulas. The selection must ensure that peak drain current does
not exceed rated values.
Continuity loss : Pc
PC =
ID2 × RDS (ON) × Duty
On-cycle switching loss : PS (ON)
PS (ON) =
VD (Max) × ID × tr × fosc
6
Off-cycle switching loss : PS (OFF)
PS (OFF) =
VD (Max) × ID (Max) × tf × fosc
6
Total loss : PT
PT = PC + PS (ON) + PS (OFF)
Example : Using the MCH3312
• CH1
Input voltage VIN = 12 V, output voltage VO = 1.2 V, drain current ID = 1.5 A, oscillation frequency fOSC = 2350 kHz,
L = 2 µH, drain-source on resistance RDS(ON) =: 180 mΩ, tr =: 2.9 ns, tf =: 8.7 ns.
Drain current (Max) : ID (Max)
ID (Max) =
Io +
= 1.5 +
=:
VIN − Vo
2L
tON
12 − 1.2
2 × 2.0 × 10
−6
×
1
2350 × 103
× 0.1
1.61 A
Drain current (Min) : ID (Min)
ID (Min) =
Io−
= 1.5 −
=:
VIN − Vo
2L
tON
12 − 1.2
2 × 2.0 × 10
−6
×
1
2350 × 103
× 0.1
1.39 A
21
MB39A112
PC = ID2 × RDS (ON) × Duty
= 1.52 × 0.18 × 0.1
=: 0.04 W
VD × ID × tr × fosc
6
12 × 1.5 × 2.9 × 10−9 × 2350 × 103
=
6
=: 0.02 W
PS (ON) =
VD × ID (Max) × tf × fosc
6
12 × 1.61 × 8.7 × 10−9 × 2350 × 103
=
6
=: 0.066 W
PS (OFF) =
PT = PC + PS (ON) + PS (OFF)
=: 0.04 + 0.02 + 0.066
=: 0.126 W
The above power dissipation figures for the MCH3312 are satisfied with ample margin at 1.0 W (Ta = +25 °C) .
• CH2
Input voltage VIN = 12 V, output voltage VO = 3.3 V, drain current ID = 1.0 A, oscillation frequency fOSC = 2350 kHz,
L = 3.3 µH, drain-source on resistance RDS(ON) =: 180 mΩ, tr =: 2.9 ns, tf =: 8.7 ns.
Drain current (Max) : ID (Max)
VIN − Vo
ID (Max) = Io +
tON
2L
12 − 3.3
= 1+
2 × 3.3 × 10−6
=: 1.15 A
Drain current (Min) : ID (Min)
VIN − Vo
ID (Min) = Io −
tON
2L
12 − 3.3
= 1−
2 × 3.3 × 10 −6
=: 0.85 A
PC = ID2 × RDS (ON) × Duty
= 12 × 0.18 × 0.275
=: 0.0495 W
22
×
1
2350 × 103
×
0.275
×
1
2350 × 103
×
0.275
MB39A112
PS (ON) =
=
=:
PS (OFF) =
=
=:
VD × ID × tr × fosc
6
12 × 1 × 2.9 × 10−9 × 2350 × 103
6
0.0136 W
VD × ID (Max) × tf × fosc
6
12 × 1.15 × 8.7 × 10−9 × 2350 × 103
6
0.047 W
PT = PC + PS (ON) + PS (OFF)
=: 0.0495 + 0.0136 + 0.047
=:
0.11 W
The above power dissipation figures for the MCH3312 are satisfied with ample margin at 1.0 W (Ta = +25 °C) .
Example : Using the MCH3308
• CH3
Input voltage VIN = 12 V, output voltage Vo = 5.0 V, drain current ID = 0.3 A, oscillation frequency fosc =
2350 kHz, L = 10 µH, drain-source on resistance RDS (ON) =: 600 mΩ, tr =: 4 ns, tf =: 4 ns.
Drain current (Max) : ID (Max)
ID (Max) =
Io +
VIN − Vo
2L
12 − 5
= 0.3 +
=:
tON
2 × 10 × 10
−6
×
1
2350 × 103
×
0.417
0.36 (A)
Drain current (Min) : ID (Min)
ID (Min) =
Io −
VIN − Vo
= 0.3 −
2L
tON
12 − 5
2 × 10 × 10
−6
×
1
2350 × 103
×
0.417
=: 0.24 (A)
PC = ID2 × RDS (ON) × Duty
= 0.32 × 0.6 × 0.417
=: 0.023 W
23
MB39A112
PS (ON) =
=
=:
VD × ID × tr × fosc
6
12 × 0.3 × 4 × 10−9 × 2350 × 103
6
0.0056 W
VD × ID (Max) × tf × fosc
6
12 × 0.36 × 4 × 10−9 × 2350 × 103
=
6
=: 0.0068 W
PS (OFF) =
PT = PC + PS (ON) + PS (OFF)
=: 0.023 + 0.0056 + 0.0068
=: 0.0354 W
The above power dissipation figures for the MCH3308 are satisfied with ample margin at 0.8 W (Ta = +25 °C) .
• Inductors
In selecting inductors, it is of course essential not to apply more current than the rated capacity of the inductor,
but also to note that the lower limit for ripple current is a critical point that if reached will cause discontinuous
operation and a considerable drop in efficiency. This can be prevented by choosing a higher inductance value,
which will enable continuous operation under light loads. Note that if the inductance value is too high, however,
direct current resistance (DCR) is increased and this will also reduce efficiency. The inductance must be set at
the point where efficiency is greatest.
Note also that the DC superimposition characteristics become worse as the load current value approaches the
rated current value of the inductor, so that the inductance value is reduced and ripple current increases, causing
loss of efficiency. The selection of rated current value and inductance value will vary depending on where the
point of peak efficiency lies with respect to load current.
Inductance values are determined by the following formulas.
The L value for all load current conditions is set so that the peak to peak value of the ripple current is 1/2 the
load current or less.
Inductance value : L
2 (VIN − Vo)
L≥
tON
Io
Example
• CH1
2 (VIN − Vo1)
L≥
Io
2 × (12 −1.2)
≥
1.5
≥ 0.61 µH
24
tON
×
1
2350 × 103
× 0.1
MB39A112
• CH2
2 (VIN − Vo2)
L≥
Io
2 × (12−3.3)
≥
1
≥ 2.04 µH
tON
×
• CH3
2 (VIN − Vo3)
L≥
Io
2 × (12 − 5)
≥
0.3
≥ 8.28 µH
1
2350 × 103
×
1
2350 × 103
× 0.417
0.275
tON
×
Inductance values derived from the above formulas are values that provide sufficient margin for continuous
operation at maximum load current, but at which continuous operation is not possible at light loads. It is therefore
necessary to determine the load level at which continuous operation becomes possible. In this application, the
TOKO A916CY-2R0M, A916CY-3R3M and A916CY-100M are used. At 2 µH, 3.3 µH and 10 µH, the load current
value under continuous operating conditions is determined by the following formula.
Load current value under continuous operating conditions : Io
Io ≥
Vo
tOFF
2L
Example : Using the A916CY-2R0M
2 µH (allowable tolerance ± 20 %), rated current = 3 A
• CH1
Vo1
Io ≥
2L
≥
tOFF
1.2
2 × 2 × 10
1
×
−6
2350 × 103
×
(1 − 0.1)
≥ 0.11 A
Example : Using the A916CY-3R3M
3.3 µH (allowable tolerance ± 20 %) , rated current = 2.57 A
• CH2
Vo2
Io ≥
2L
≥
tOFF
3.3
2 × 3.3 × 10
−6
×
1
2350 × 103
×
(1 − 0.275)
≥ 0.15 A
25
MB39A112
Example : Using the A916CY-100M
10.0 µH (allowable tolerance ± 20 %) , rated current = 1.49 A
• CH3
Vo3
Io ≥
2L
≥
tOFF
5
×
2 × 10 × 10−6
1
2350 × 103
×
(1 − 0.417)
≥ 62.0 mA
To determine whether the current through the inductor is within rated values, it is necessary to determine the
peak value of the ripple current as well as the peak-to-peak values of the ripple current that affect the output
ripple voltage. The peak value and peak-to-peak value of the ripple current can be determined by the following
formulas.
Peak value : IL
VIN − Vo
IL ≥ Io +
tON
2L
Peak-to-peak value : ∆IL
∆IL =
VIN − Vo
L
tON
Example : Using the A916CY-2R0M
2.0 µH (allowable tolerance ± 20 %) , rated current = 3.0 A
• CH1
Peak value
IL ≥ Io +
VIN − Vo1
≥ 1.5 +
≥
2L
tON
12 − 1.2
2 × 2.0 × 10
×
−6
1
2350 × 103
1.61 A
Peak-to-peak value
VIN − Vo1
tON
∆IL =
L
=
=:
26
12 − 1.2
2.0 × 10−6
0.23 A
×
1
2350 × 103
× 0.1
× 0.1
MB39A112
Example : Using the A916CY-3R3M
3.3 µH (allowable tolerance ± 20 %) , rated current = 2.57 A
• CH2
Peak value
IL ≥ Io +
VIN − Vo2
12 − 3.3
≥ 1.0 +
≥
tON
2L
×
2 × 3.3 × 10−6
1
2350 × 103
× 0.275
1.15 A
Peak-to-peak value
VIN − Vo2
tON
∆IL =
L
=
=:
12 − 3.3
×
3.3 × 10
−6
1
2350 × 103
× 0.275
0.309 A
Example : Using the A916CY-100M
10.0 µH (allowable tolerance ± 20 %) , rated current = 1.49 A
• CH3
Peak value
IL ≥ Io +
VIN − Vo3
≥ 0.3 +
≥
tON
2L
12 − 5
×
2 × 10 × 10
−6
1
2350 × 103
× 0.417
0.36 A
Peak-to-peak value
VIN − Vo3
tON
∆IL =
L
=
=:
12 − 5
10 × 10
−6
×
1
2350 × 103
× 0.417
0.124 A
27
MB39A112
• Flyback diode
The flyback diode is generally used as a Shottky barrier diode (SBD) when the reverse voltage to the diode is
less than 40 V. The SBD has the characteristics of higher speed in terms of faster reverse recovery time, and
lower forward voltage, and is ideal for archiving high efficiency. As long as the DC reverse voltage is sufficiently
higher than the input voltage, the average current flowing through the diode is within the average output current
level, and peak current is within peak surge current limits, there is no problem. In this application the SANYO
SBE001, SBS005 are used. The diode average current and diode peak current can be calculated by the following
formulas.
Diode mean current : IDi
IDi ≥ Io ×
( 1−
Vo
)
VIN
Diode peak current : IDip
IDip ≥
Vo
(Io +
2L
tOFF)
Example : Using the SBE001
VR (DC reverse voltage) = 30 V, average output current = 2.0 A, peak surge current = 20 A,
VF (forward voltage) = 0.55 V, at IF = 2.0 A
• CH1
Diode mean current
IDi ≥ Io ×
(1 −
≥ 1.5 ×
Vo1
VIN
)
(1 − 0.1)
≥ 1.35 A
Diode peak current
Vo1
IDip ≥ (Io +
2L
tOFF)
≥ 1.61 A
• CH2
Diode mean current
IDi ≥ Io ×
(1 −
Vo2
VIN
≥ 1.0 × (1 − 0.275)
≥ 0.725 A
28
)
MB39A112
Diode peak current
Vo2
IDip ≥ (Io +
2L
tOFF)
≥ 1.15 A
Example : Using the SBS005
VR (DC reverse voltage) = 30 V, average output current = 1.0 A, peak surge current = 10 A,
VF (forward voltage) = 0.4 V, at IF = 0.5 A
• CH3
Diode mean current
IDi ≥ Io ×
(1 −
Vo3
VIN
)
≥ 0.3 × (1 − 0.417)
≥
0.175 A
Diode peak current
Vo3
IDip ≥ (Io +
2L
tOFF)
≥ 0.36 A
29
MB39A112
■ REFERENCE DATA
Conversion Efficiency vs. Load Current Characteristics (CH1)
Conversion efficiency η (%)
100
Ta = + 25 °C
1.2 V output
CTL1 = “L”
CTL2 = “H”
CTL3 = “H”
RT = 5.1 kΩ
CT = 100 pF
90
80
70
VIN = 7 V
VIN = 10 V
VIN = 12 V
60
50
40
30
10 m
100 m
1
10
Load current IL (A)
Conversion Efficiency vs. Load Current Characteristics (CH2)
Conversion efficiency η (%)
100
Ta = + 25 °C
3.3 V output
CTL1 = “H”
CTL2 = “L”
CTL3 = “H”
RT = 5.1 kΩ
CT = 100 pF
90
80
70
VIN = 7 V
VIN = 10 V
VIN = 12 V
60
50
40
30
10 m
100 m
1
10
Load current IL (A)
Conversion Efficiency vs. Load Current Characteristics (CH3)
Conversion efficiency η (%)
100
Ta = + 25 °C
5.0 V output
CTL1 = “H”
CTL2 = “H”
CTL3 = “L”
RT = 5.1 kΩ
CT = 100 pF
90
80
70
VIN = 7 V
VIN = 10 V
VIN = 12 V
60
50
40
30
10 m
100 m
1
10
Load current IL (A)
(Continued)
30
MB39A112
Conversion Efficiency vs. Load Current Characteristics (CH1)
Conversion efficiency η (%)
100
Ta = + 25 °C
1.2 V output
CTL1 = “L”
CTL2 = “H”
CTL3 = “H”
RT = 10 kΩ
CT = 100 pF
90
80
70
VIN = 7 V
VIN = 10 V
VIN = 12 V
60
50
40
30
10 m
100 m
1
10
Load current IL (A)
Conversion Efficiency vs. Load Current Characteristics (CH2)
Conversion efficiency η (%)
100
Ta = + 25 °C
3.3 V output
CTL1 = “H”
CTL2 = “L”
CTL3 = “H”
RT = 10 kΩ
CT = 100 pF
90
80
70
VIN = 7 V
VIN = 10 V
VIN = 12 V
60
50
40
30
10 m
100 m
1
10
Load current IL (A)
Conversion Efficiency vs. Load Current Characteristics (CH3)
Conversion efficiency η (%)
100
Ta = + 25 °C
5.0 V output
CTL1 = “H”
CTL2 = “H”
CTL3 = “L”
RT = 10 kΩ
CT = 100 pF
90
80
70
VIN = 7 V
VIN = 10 V
VIN = 12 V
60
50
40
30
10m
100m
1
10
Load current IL (A)
(Continued)
31
MB39A112
(Continued)
Conversion Efficiency vs. Load Current Characteristics (CH1)
Conversion efficiency η (%)
100
Ta = + 25 °C
1.2 V output
CTL1 = “L”
CTL2 = “H”
CTL3 = “H”
RT = 24 kΩ
CT = 100 pF
90
80
70
VIN = 7 V
VIN = 10 V
VIN = 12 V
60
50
40
30
10 m
100 m
1
10
Load current IL (A)
Conversion Efficiency vs. Load Current Characteristics (CH2)
Conversion efficiency η (%)
100
Ta = + 25 °C
3.3 V output
CTL1 = “H”
CTL2 = “L”
CTL3 = “H”
RT = 24 kΩ
CT = 100 pF
90
80
70
VIN = 7 V
VIN = 10 V
VIN = 12 V
60
50
40
30
10 m
100 m
1
10
Load current IL (A)
Cconversion Efficiency vs. Load Current Characteristics (CH3)
Cconversion efficiency η (%)
100
Ta = + 25 °C
5.0 V output
CTL1 = “H”
CTL2 = “H”
CTL3 = “L”
RT = 24 kΩ
CT = 100 pF
90
80
70
60
50
40
30
10 m
100 m
1
Load current IL (A)
32
VIN = 7 V
VIN = 10 V
VIN = 12 V
10
MB39A112
■ USAGE PRECAUTION
• Printed circuit board ground lines should be set up with consideration for common impedance.
• Take appropriate static electricity measures.
• Containers for semiconductor materials should have anti-static protection or be made of conductive material.
• After mounting, printed circuit boards should be stored and shipped in conductive bags or containers.
• Work platforms, tools and instruments should be properly grounded.
• Working personnel should be grounded with resistance of 250 kΩ to 1 MΩ between body and ground.
• Do not apply negative voltages.
• The use of negative voltages below −0.3 V may create parasitic transistors on LSI lines, which can cause
abnormal operation.
■ ORDERING INFORMATION
Part number
MB39A112PFT
Package
Remarks
20-pin plastic TSSOP
(FPT-20P-M06)
33
MB39A112
■ PACKAGE DIMENSION
Note 1) *1 : Resin protrusion. (Each side : +0.15 (.006) Max) .
Note 2) *2 : These dimensions do not include resin protrusion.
Note 3) Pins width and pins thickness include plating thickness.
Note 4) Pins width do not include tie bar cutting remainder.
20-pin plastic TSSOP
(FPT-20P-M06)
*1 6.50±0.10(.256±.004)
0.17±0.05
(.007±.002)
11
20
*2 4.40±0.10 6.40±0.20
(.173±.004) (.252±.008)
INDEX
Details of "A" part
1.05±0.05
(Mounting height)
(.041±.002)
LEAD No.
1
10
0.65(.026)
"A"
0.24±0.08
(.009±.003)
0.13(.005)
M
0~8˚
+0.03
(0.50(.020))
0.10(.004)
C
0.60±0.15
(.024±.006)
+.001
0.07 –0.07 .003 –.003
(Stand off)
0.25(.010)
2003 FUJITSU LIMITED F20026S-c-3-3
Dimensions in mm (inches) .
Note : The values in parentheses are reference values.
34
MB39A112
MEMO
35
FUJITSU MICROELECTRONICS LIMITED
Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku,
Tokyo 163-0722, Japan
Tel: +81-3-5322-3347 Fax: +81-3-5322-3387
http://jp.fujitsu.com/fml/en/
For further information please contact:
North and South America
FUJITSU MICROELECTRONICS AMERICA, INC.
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Sunnyvale, CA 94085-5401, U.S.A.
Tel: +1-408-737-5600 Fax: +1-408-737-5999
http://www.fma.fujitsu.com/
Asia Pacific
FUJITSU MICROELECTRONICS ASIA PTE LTD.
151 Lorong Chuan, #05-08 New Tech Park,
Singapore 556741
Tel: +65-6281-0770 Fax: +65-6281-0220
http://www.fujitsu.com/sg/services/micro/semiconductor/
Europe
FUJITSU MICROELECTRONICS EUROPE GmbH
Pittlerstrasse 47, 63225 Langen,
Germany
Tel: +49-6103-690-0 Fax: +49-6103-690-122
http://emea.fujitsu.com/microelectronics/
FUJITSU MICROELECTRONICS SHANGHAI CO., LTD.
Rm.3102, Bund Center, No.222 Yan An Road(E),
Shanghai 200002, China
Tel: +86-21-6335-1560 Fax: +86-21-6335-1605
http://cn.fujitsu.com/fmc/
Korea
FUJITSU MICROELECTRONICS KOREA LTD.
206 KOSMO TOWER, 1002 Daechi-Dong,
Kangnam-Gu,Seoul 135-280
Korea
Tel: +82-2-3484-7100 Fax: +82-2-3484-7111
http://www.fmk.fujitsu.com/
FUJITSU MICROELECTRONICS PACIFIC ASIA LTD.
10/F., World Commerce Centre, 11 Canton Road
Tsimshatsui, Kowloon
Hong Kong
Tel: +852-2377-0226 Fax: +852-2376-3269
http://cn.fujitsu.com/fmc/tw
All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with sales representatives before ordering.
The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose
of reference to show examples of operations and uses of FUJITSU MICROELECTRONICS device; FUJITSU MICROELECTRONICS
does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information.
FUJITSU MICROELECTRONICS assumes no liability for any damages whatsoever arising out of the use of the information.
Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use
or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU MICROELECTRONICS
or any third party or does FUJITSU MICROELECTRONICS warrant non-infringement of any third-party's intellectual property right or
other right by using such information. FUJITSU MICROELECTRONICS assumes no liability for any infringement of the intellectual
property rights or other rights of third parties which would result from the use of information contained herein.
The products described in this document are designed, developed and manufactured as contemplated for general use, including without
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured
as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect
to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in
nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in
weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that FUJITSU MICROELECTRONICS will not be liable against you and/or any third party for any claims or damages arising
in connection with above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by
incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current
levels and other abnormal operating conditions.
Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of
the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.
The company names and brand names herein are the trademarks or registered trademarks of their respective owners.
Edited
Strategic Business Development Dept.
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