AOV20S60 αααα 600V 18A MOS

AOV20S60 αααα 600V 18A MOS
AOV20S60
600V 18A α MOS
TM
General Description
Product Summary
The AOV20S60 has been fabricated using the advanced
αMOSTM high voltage process that is designed to deliver
high levels of performance and robustness in switching
applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability this part can be adopted
quickly into new and existing offline power supply designs.
VDS @ Tj,max
700V
IDM
80A
RDS(ON),max
0.25Ω
Qg,typ
20nC
Eoss @ 400V
4.9µJ
Power Transistor
100% UIS Tested
100% Rg Tested
DFN8X8
Top View
Bottom View
D
D
G
S
Pin1:G
G
S
Pin2: Driver Source
S
AOV20S60
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
V
A
80
3.6
IDSM
TA=70°C
±30
13
IDM
TA=25°C
Continuous Drain
Current
Units
V
18
ID
TC=100°C
Maximum
600
A
2.9
Avalanche Current C
IAR
3.4
A
Repetitive avalanche energy C
EAR
23
mJ
Single pulsed avalanche energy G
EAS
188
mJ
TC=25°C
Power Dissipation
B
Derate above 25oC
TA=25°C
Power Dissipation A TA=70°C
MOSFET dv/dt ruggedness
H
Peak diode recovery dv/dt
Junction and Storage Temperature Range
Maximum lead temperature for soldering
J
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: September 2013
PD
PDSM
dv/dt
TJ, TSTG
TL
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJC
Typ
12
40
0.35
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278
W
2.2
8.3
W/ C
o
W
5.3
100
20
-55 to 150
V/ns
300
°C
°C
Max
15
50
0.45
Units
°C/W
°C/W
°C/W
Page 1 of 7
AOV20S60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
Units
600
-
-
650
700
-
V
µA
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
-
-
1
VDS=480V, TJ=150°C
-
10
-
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V,ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VSD
Diode Forward Voltage
IS
ISM
-
±100
3.4
4.1
nΑ
V
VGS=10V, ID=10A, TJ=25°C
-
0.21
0.25
Ω
VGS=10V, ID=10A, TJ=150°C
-
0.53
0.66
Ω
IS=10A,VGS=0V, TJ=25°C
-
0.84
-
V
Maximum Body-Diode Continuous Current
-
-
18
A
Maximum Body-Diode Pulsed CurrentC
-
-
80
A
-
1038
-
pF
-
68
-
pF
-
56.6
-
pF
-
176.5
-
pF
VGS=0V, VDS=100V, f=1MHz
-
2.1
-
pF
f=1MHz
-
9.3
-
Ω
-
20
-
nC
-
4.6
-
nC
nC
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related H
Crss
Effective output capacitance, time
related I
Reverse Transfer Capacitance
Rg
Gate resistance
Co(tr)
2.8
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
VGS=10V, VDS=480V, ID=10A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
-
7.6
-
tD(on)
Turn-On DelayTime
-
27.5
-
ns
tr
Turn-On Rise Time
-
32
-
ns
-
87.5
-
ns
-
30
-
ns
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
VGS=10V, VDS=400V, ID=10A,
RG=25Ω
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
IF=10A,dI/dt=100A/µs,VDS=400V
-
350
-
ns
Irm
IF=10A,dI/dt=100A/µs,VDS=400V
-
27
-
Qrr
Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=400V
-
5.7
-
A
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=2.5A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as C oss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as C oss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: September 2013
www.aosmd.com
Page 2 of 7
AOV20S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
40
10V
10V
35
25
30
7V
25
6V
7V
ID (A)
ID (A)
20
20
5.5V
15
10
VGS=4.5V
6V
15
5.5V
10
5V
5
5V
5
VGS=4.5V
0
0
0
5
10
15
0
20
5
VDS (Volts)
Figure 1: On-Region [email protected]°C
100
15
20
0.5
-55°C
VDS=20V
0.4
10
125°C
RDS(ON) (Ω )
ID(A)
10
VDS (Volts)
Figure 2: On-Region [email protected]°C
1
VGS=10V
0.3
0.2
25°C
0.1
0.1
0.0
0.01
2
4
6
8
0
10
20
30
40
50
ID (A)
Figure 4: On-Resistance vs. Drain Current and
Gate Voltage
VGS(Volts)
Figure 3: Transfer Characteristics
1.2
3
2.5
VGS=10V
ID=10A
BVDSS (Normalized)
Normalized On-Resistance
10
2
1.5
1
1.1
1
0.9
0.5
0
-100
-50
0
50
100
150
200
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
Rev.1.0: September 2013
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0.8
-100
-50
0
50
100
150
200
TJ (oC)
Figure 6: Break Down vs. Junction Temperature
Page 3 of 7
AOV20S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
1.0E+02
1.0E+01
125°C
12
VDS=480V
ID=10A
25°C
1.0E-01
9
VGS (Volts)
IS (A)
1.0E+00
1.0E-02
1.0E-03
6
1.0E-04
3
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
0
0
VSD (Volts)
Figure 7: Body-Diode Characteristics (Note E)
5
10
15
20
25
30
Qg (nC)
Figure 8: Gate-Charge Characteristics
10000
10
8
1000
Eoss(uJ)
Capacitance (pF)
Ciss
Coss
100
Eoss
6
4
Crss
10
2
0
1
0
100
200
300
400
500
VDS (Volts)
Figure 9: Capacitance Characteristics
0
600
100
200
300
400
VDS (Volts)
Figure 10: Coss stored Energy
500
600
200
10µs
RDS(ON)
limited
10
160
100µs
1ms
1
DC
10ms
EAS(mJ)
ID (Amps)
100
120
80
0.1
TJ(Max)=150°C
TC=25°C
40
0.01
1
10
100
1000
Figure 11: Maximum Forward Biased Safe
Operating Area for (Note F)
Rev.1.0: September 2013
0
25
VDS (Volts)
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50
75
100
125
TCASE (°C)
Figure 12: Avalanche energy
150
175
Page 4 of 7
AOV20S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5000
TJ(Max)=150°C
TC=25°C
4000
15
Power (W)
Current rating ID(A)
20
10
3000
2000
5
1000
0
0
25
50
75
100
125
TCASE (°C)
Figure 13: Current De-rating (Note B)
150
0
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.45°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
Ton
0.01
0.001
0.000001
Single Pulse
0.00001
0.0001
0.001
0.01
T
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: September 2013
www.aosmd.com
Page 5 of 7
AOV20S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
TJ(Max)=150°C
TA=25°C
Power (W)
80
60
40
20
0
0.01
0.1
1
10
100
1000
10000
Pulse Width (s)
Figure 16: Single Pulse Power Rating Junction-to-Ambient (Note G)
Zθ JC Normalized Transient
Thermal Resistance
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.1
PD
0.01
Ton
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
T
1000
10000
Pulse Width (s)
Figure 17: Normalized Maximum Transient Thermal Impedance (Note G)
Rev.1.0: September 2013
www.aosmd.com
Page 6 of 7
AOV20S60
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.1.0: September 2013
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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Page 7 of 7
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