datasheet for 2SB1143 by Sanyo Semiconductor

datasheet for 2SB1143 by Sanyo Semiconductor
2SB1143/2SD1683
Ordering number : EN2063C
SANYO Semiconductors
DATA SHEET
PNP/NPN Epitaxial Planar Silicon Transistor
2SB1143/2SD1683
50V/4A Switching
Applications
Applications
•
Voltage regulators, relay drivers, lamp drivers, electrical equipment
Features
•
•
Adoption of FBET, MBIT processes
Large current capacity and wide ASO
•
Low saturation voltage
Specifications ( ): 2SB1143
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
Unit
VCBO
VCEO
(--)60
(--)50
V
(--)6
V
Collector Current
VEBO
IC
(--)4
A
Collector Current (Pulse)
ICP
(--)6
A
1.5
W
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Tc=25°C
10
W
150
°C
--55 to +150
°C
Package Dimensions
Product & Package Information
unit : mm (typ)
7516A-002
• Package
: TO-126ML
• JEITA, JEDEC
: TO-126
• Minimum Packing Quantity : 200 pcs./bag
8.0
4.0
3.6
3.3
1.0
11.0
Marking
B1143
D1683
RANK LOT No.
RANK LOT No.
1.5
7.5
3.0
1.4
1.0
2SB1143S
2SB1143T
2SD1683S
2SD1683T
V
3.0
1.6
0.8
0.8
0.75
15.5
0.7
Electrical Connection
2
3
1.7
1
2
1 : Emitter
2 : Collector
3 : Base
3
2.4
4.8
2
3
SANYO : TO-126ML
2SB1143
1
2SD1683
1
http://www.sanyosemi.com/en/network/
90512 TKIM/O2003TN (KOTO)/92098HA (KT)/4137KI/D176TA, TS No.2063-1/7
2SB1143/2SD1683
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Conditions
ICBO
IEBO
VCB=(--)40V, IE=0A
VEB=(--)4V, IC=0A
hFE1
VCE=(--)2V, IC=(--)100mA
VCE=(--)2V, IC=(--)3A
hFE2
Ratings
min
typ
100*
Unit
max
(--)1
µA
(--)1
µA
560*
40
Gain-Bandwidth Product
fT
Output Capacitance
Cob
VCE=(--)10V, IC=(--)50mA
VCB=(--)10V, f=1MHz
Collector-to-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
IC=(--)2A, IB=(--)100mA
IC=(--)2A, IB=(--)100mA
V(BR)CBO
V(BR)CEO
IC=(--)10µA, IE=0A
IC=(--)1mA, RBE=∞
(--)60
V
(--)50
V
V(BR)EBO
t on
IE=(--)10µA, IC=0A
(--)6
t stg
tf
See specified Test Circuit.
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
150
MHz
(39)25
pF
(--350)190
(--700)500
(--)0.94
(--)1.2
mV
V
V
(70)70
ns
(450)650
ns
(30)35
ns
* : The 2SB1143/2SD1683 are classified by 100mA hFE as follows :
Rank
hFE
R
100 to 200
S
140 to 280
T
200 to 400
U
280 to 560
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
OUTPUT
IB2
INPUT
VR
RB
RL
25Ω
50Ω
+
100µF
+
470µF
VBE= --5V
VCC=25V
IC=10IB1= --10IB2=1A
(For PNP, the polarity is reversed.)
Ordering Information
Package
Shipping
2SB1143S
Device
TO-126ML
200pcs./bag
2SB1143T
TO-126ML
200pcs./bag
2SD1683S
TO-126ML
200pcs./bag
2SD1683T
TO-126ML
200pcs./bag
memo
Pb Free
No.2063-2/7
2SB1143/2SD1683
IC -- VCE
--5
IC -- VCE
5
2SB1143
2SD1683
A
100m
80mA
60mA
mA
--4
mA
--50mA
--3
--20mA
--2
--10mA
--5mA
--1
0
--0.4
--0.8
--1.2
mA
A
5mA
IB=0mA
0.4
0.8
1.2
1.6
2.0
Collector-to-Emitter Voltage, VCE -- V
ITR09047
ITR09048
IC -- VCE
2.0
2SD1683
8mA
7mA
--10mA
--1.6
10mA
2
0
2SB1143
--12m
--14
20mA
--2.0
IC -- VCE
--2.0
40mA
3
0
--1.6
Collector-to-Emitter Voltage, VCE -- V
4
1
IB=0mA
0
Collector Current, IC -- A
Collector Current, IC -- A
--100
Collector Current, IC -- A
Collector Current, IC -- A
0
--20
--8mA
--6mA
--1.2
--4mA
--0.8
--2mA
--0.4
1.6
6mA
5mA
1.2
4mA
3mA
0.8
2mA
0.4
1mA
IB=0mA
0
0
--4
--8
--12
IB=0mA
0
--16
--20
0
8
12
16
IC -- VBE
IC -- VBE
4.8
2SD1683
VCE=2V
2SB1143
VCE= --2V
--3.2
--2.4
--1.6
--0.8
3.2
2.4
1.6
Ta=
75
25° °C
C
--25
°C
Collector Current, IC -- A
4.0
Ta=
75
25° °C
--25 C
°C
Collector Current, IC -- A
--4.0
0.8
0
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-Emitter Voltage, VBE -- V
--1.4
0
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
1.4
ITR09052
2SD1683
VCE=2V
7
5
1.2
hFE -- IC
1000
2SB1143
VCE= --2V
7
0.2
ITR09051
hFE -- IC
1000
5
Ta=75°C
25°C
--25°C
3
2
DC Current Gain, hFE
DC Current Gain, hFE
20
Collector-to-Emitter Voltage, VCE -- V ITR09050
Collector-to-Emitter Voltage, VCE -- V ITR09049
--4.8
4
100
7
5
3
25°C
2
--25°C
100
7
5
3
3
2
2
10
Ta=75°C
10
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
Collector Current, IC -- A
2
3
5
ITR09053
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
Collector Current, IC -- A
2
3
5
ITR09054
No.2063-3/7
2SB1143/2SD1683
f T -- IC
1000
5
3
2SD
168
2
3
2SB
1143
100
7
5
3
2
10
0.01
For PNP, the minus sign is omitted.
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
--1000
7
5
3
2
--100
25°C
7
5
Ta=
3
--25°C
75°C
2
2SB1
143
2SD
168
3
5
3
2
For PNP, the minus sign is omitted.
2
3
5
7
2
10
3
5
7 100
ITR09056
VCE(sat) -- IC
2SD1642
IC / IB=20
3
2
1000
7
5
3
2
100
7
5
25°C
Ta=75°C
3
--25°C
2
--10
10
7 --0.01
2
3
5
7 --0.1
2
3
5 7 --1.0
Collector Current, IC -- A
2
3
5
7 0.01
7 0.1
2
3
5 7 1.0
3
2
25°C
7
75°C
2
3
5
ITR09058
VBE(sat) -- IC
2SD1683
IC / IB=20
7
5
5
5
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
7
Ta= --25°C
3
10
2SB1143
IC / IB=20
--1.0
2
ITR09057
VBE(sat) -- IC
--10
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
7
Collector-to-Base Voltage, VCB -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2
100
5
2SB1143
IC / IB=20
3
2
10
1.0
5 7 10
ITR09055
VCE(sat) -- IC
5
2SB1143 / 2SD1683
f=1MHz
3
Output Capacitance, Cob -- pF
Gain-Bandwidth Product, f T -- MHz
7
Cob -- VCB
5
2SB1143 / 2SD1683
VCE=10V
5
3
2
1.0
25°C
Ta= --25°C
7
75°C
5
3
2
3
2
7 --0.01
0.1
2
3
5
7 --0.1
2
3
5
7 --1.0
Collector Current, IC -- A
3
5
7 0.01
ms
DC
op
tio
s
DC
1.0
7
5
0m
era
2
nT
c=
25
°C
op
era
tio
nT
a=
3
25
°C
2
0.1
7
5
Tc=25°C
Single pulse
For PNP, the minus sign is omitted.
3
2
3
5
7 1.0
2
3
5
5
7 10
7 0.1
2
3
5
7 1.0
2
3
5
ITR09060
PC -- Ta
12
2SB1143 / 2SD1683
1m
s
10
IC=4A
3
10
3
Collector Current, IC -- A
Collector Dissipation, PC -- W
ICP=6A
7
5
2
ITR09059
ASO
10
Collector Current, IC -- A
2
2SB1143 / 2SD1683
10
8
6
4
2
1.5
No heat si
nk
0
2
3
Collector-to-Emitter Voltage, VCE -- V
5
7 100
ITR09061
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
ITR09062
No.2063-4/7
2SB1143/2SD1683
Bag Packing Specification
2SB1143S, 2SB1143T, 2SD1683S, 2SD1683T
No.2063-5/7
2SB1143/2SD1683
Outline Drawing
2SB1143S, 2SB1143T, 2SD1683S, 2SD1683T
Mass (g) Unit
0.97
mm
* For reference
No.2063-6/7
2SB1143/2SD1683
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
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solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
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SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
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In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of September, 2012. Specifications and information herein are subject
to change without notice.
PS No.2063-7/7
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