Документация 30eph03_eng_tds
VS-30EPH03PbF, VS-30EPH03-N3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 30 A FRED Pt®
FEATURES
Base
common
cathode
2
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Designed and
JEDEC-JESD47
1
Cathode
TO-247AC modified
3
Anode
qualified
according
to
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION/APPLICATION
300 V series are the state of the art ultrafast recovery
rectifiers designed with optimized performance of forward
voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package
TO-247AC modified (2 pins)
IF(AV)
30 A
VR
300 V
VF at IF
1.25 V
trr typ.
See Recovery table
TJ max.
175 °C
Diode variation
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
300
V
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 143 °C
30
Non-repetitive peak surge current
IFSM
TJ = 25 °C
300
Operating junction and storage temperatures
TJ, TStg
A
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
MIN.
TYP.
MAX.
300
-
-
IF = 30 A
-
1.08
1.25
IR = 100 μA
IF = 30 A, TJ = 125 °C
-
0.9
1.00
VR = VR rated
-
0.05
60
TJ = 125 °C, VR = VR rated
-
280
600
UNITS
V
μA
Reverse leakage current
IR
Junction capacitance
CT
VR = 300 V
-
90
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
3.5
-
nH
Revision: 26-Jun-12
Document Number: 94017
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30EPH03PbF, VS-30EPH03-N3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
Peak recovery current
Reverse recovery charge
SYMBOL
trr
IRRM
Qrr
TEST CONDITIONS
MIN.
TYP.
MAX.
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
-
-
55
TJ = 25 °C
-
38
-
TJ = 125 °C
-
52
-
-
2.8
-
-
7.3
-
TJ = 25 °C
TJ = 125 °C
IF = 30 A
dIF/dt = - 200 A/μs
VR = 200 V
TJ = 25 °C
-
53
-
TJ = 125 °C
-
190
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
MIN.
TYP.
MAX.
UNITS
TJ, TStg
- 65
-
175
°C
Thermal resistance,
junction to case per leg
RthJC
-
0.5
0.9
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
-
-
40
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and greased
-
0.4
-
-
6.0
-
-
0.22
-
oz.
-
12
(10)
kgf · cm
(lbf  in)
Maximum junction and
storage temperature range
SYMBOL
TEST CONDITIONS
Weight
6.0
(5.0)
Mounting torque
Marking device
Revision: 26-Jun-12
Case style TO-247AC modified
°C/W
g
30EPH03
Document Number: 94017
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30EPH03PbF, VS-30EPH03-N3
www.vishay.com
Vishay Semiconductors
1000
100
10
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
1
0.2
TJ = 175 °C
100
IR - Reverse Current (µA)
IF - Instantaneous
Forward Current (A)
1000
TJ = 150 °C
10
TJ = 125 °C
1
TJ = 100 °C
0.1
0.01
TJ = 25 °C
0.001
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
1.8
50
150
100
250
200
300
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
10
0
100
50
150
200
250
300
ZthJC - Thermal Impedance (°C/W)
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.1
PDM
0.01
Single pulse
(thermal resistance)
0.001
0.00001
0.0001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
t1
t2
Notes:
1. Duty factor D = t1/t2 ..
2. Peak TJ = PDM x ZthJC + TC
0.01
0.1
.
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 26-Jun-12
Document Number: 94017
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30EPH03PbF, VS-30EPH03-N3
www.vishay.com
Vishay Semiconductors
100
170
DC
160
150
trr (ns)
Allowable Case Temperature (°C)
180
Square wave (D = 0.50)
Rated VR applied
IF = 30 A, TJ = 125 °C
140
130
See note (1)
120
0
5
10
15
20
25
30
35
40
10
100
45
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
50
1000
40
IF = 30 A, TJ = 125 °C
RMS limit
30
Qrr (nC)
Average Power Loss (W)
IF = 30 A, TJ = 25 °C
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
20
10
DC
0
0
10
20
30
40
50
100
IF = 30 A, TJ = 25 °C
10
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
(1)
Revision: 26-Jun-12
Document Number: 94017
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30EPH03PbF, VS-30EPH03-N3
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 26-Jun-12
Document Number: 94017
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30EPH03PbF, VS-30EPH03-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
30
E
P
H
03
PbF
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (30 = 30 A)
3
-
Circuit configuration:
E = Single diode
4
-
Package:
P = TO-247AC modified
5
-
H = Hyperfast recovery
6
-
Voltage rating (03 = 300 V)
7
-
Environmental digit:
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
VS-30EPH03PbF
25
500
PACKAGING DESCRIPTION
Antistatic plastic tube
VS-30EPH03-N3
25
500
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Revision: 26-Jun-12
www.vishay.com/doc?95253
TO-247AC modified PbF
www.vishay.com/doc?95255
TO-247AC modified -N3
www.vishay.com/doc?95442
Document Number: 94017
6
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
DIMENSIONS in millimeters and inches
A
A
(3)
(6) ΦP
E
B
(2) R/2
N
A2
S
(Datum B)
Ø K M DBM
ΦP1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
A
See view B
2 x b2
3xb
Planting
View A - A
C
2x e
A1
b4
0.10 M C A M
(4)
E1
(b1, b3, b5)
Lead assignments
Base metal
D DE
(c)
c1
E
C
C
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.37
2.59
3.43
2.59
3.38
0.38
0.86
0.38
0.76
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.094
0.102
0.135
0.102
0.133
0.015
0.034
0.015
0.030
0.776
0.815
0.515
-
View B
NOTES
SYMBOL
3
4
D2
E
E1
e
K
L
L1
N
P
P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.72
5.46 BSC
2.54
14.20
16.10
3.71
4.29
7.62 BSC
3.56
3.66
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.540
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.3
0.14
0.144
0.275
0.209
0.224
1.78
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerance per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 21-Jun-11
Document Number: 95253
1
For technical questions within your region: [email protected]m, [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000
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