BAT81S, BAT82S, BAT83S Small Signal Schottky Diode Vishay Semiconductors www.vishay.com

BAT81S, BAT82S, BAT83S Small Signal Schottky Diode Vishay Semiconductors www.vishay.com
BAT81S, BAT82S, BAT83S
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diode
FEATURES
• Integrated protection ring against static
discharge
• Low capacitance
• Low leakage current
• Low forward voltage drop
• Very low switching time
• AEC-Q101 qualified
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
MECHANICAL DATA
APPLICATIONS
Case: DO-35
•
•
•
•
•
•
•
Weight: approx. 125 mg
Cathode band color: black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
General purpose and switching Schottky barrier diode
HF-detector
Protection circuit
Diode for low currents with a low supply voltage
Small battery charger
Power supplies
DC/DC converter for notebooks
PARTS TABLE
TYPE
DIFFERENTATION
ORDERING CODE
INTERNAL
CONSTRUCTION
BAT81S
VR = 40 V
BAT81S-TR or BAT81S-TAP
Single diode
BAT81S
Tape and reel/ammopack
BAT82S
VR = 50 V
BAT82S-TR or BAT82S-TAP
Single diode
BAT82S
Tape and reel/ammopack
BAT83S
VR = 60 V
BAT83S-TR or BAT83S-TAP
Single diode
BAT83S
Tape and reel/ammopack
PART
TYPE MARKING
REMARKS
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
PART
SYMBOL
VALUE
UNIT
BAT81S
VR
40
V
BAT82S
VR
50
V
BAT83S
VR
60
V
Forward continuous current
Peak forward surge current
Repetitive peak forward current
IF
30
mA
tp  10 ms
IFSM
500
mA
tp 1 s
IFRM
150
mA
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
TEST CONDITION
SYMBOL
VALUE
UNIT
I = 4 mm, TL = constant
RthJA
320
K/W
Tj
125
°C
Tstg
- 65 to + 150
°C
Junction temperature
Storage temperature range
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Diode capacitance
Rev. 1.9, 06-May-13
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 0.1 mA
VF
330
mV
IF = 1 mA
VF
410
mV
IF = 15 mA
VF
1000
mV
VR = VRmax.
IR
200
nA
VR = 1 V, f = 1 MHz
CD
1.6
pF
Document Number: 85512
1
For technical questions within your region: [email protected], [email protected]om, [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAT81S, BAT82S, BAT83S
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PR - Reverse Power Dissipation (mW)
14
1000
VR = 60 V
I F - Forward Current (mA)
12
RthJA = 540 K/W
10
8
6
Limit at
PPRR - Limit
at100
100%%VRVR
4
PR - Limit at 80 % VR
100
Tj = 125 °C
10
Tj = 25 °C
1
0.1
2
0.01
0
25
50
75
100
125
0
150
Tj - Junction Temperature (°C)
15794
1
1.5
2.0
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 1 - Max. Reverse Power Dissipation vs.
Junction Temperature
1000
2.0
CD - Diode Capacitance (pF)
V R = V RRM
I R - Reverse Current (µA)
0.5
V F - Forward Voltage (V)
15796
100
10
1
f = 1 MHz
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
25
50
75
100
125
0.1
150
15797
Tj - Junction Temperature (°C)
15795
Fig. 2 - Reverse Current vs. Junction Temperature
1
10
100
VR - Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): DO-35
3.9 max. [0.154]
3.1 min. [0.120]
26 min. [1.024]
1.3 [0.050]
26 min. [1.024]
1.7 [0.067]
Ø 0.4 min. [0.015]
Ø 0.6 max. [0.024]
Cathode Identification
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
94 9366
Rev. 1.9, 06-May-13
Document Number: 85512
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
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