AOS Semiconductor Product Reliability Report AOD406 /

AOS Semiconductor Product Reliability Report AOD406 /
AOS Semiconductor
Product Reliability Report
AOD406 / AOD406L,
rev A
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
495 Mercury Drive
Sunnyvale, CA 94085
U.S.
Tel: (408) 830-9742
www.aosmd.com
September 20, 2004
1
This AOS product reliability report summarizes the qualification result for AOD406/AOD406L.
Accelerated environmental tests are performed on a specific sample size, and then followed by
electrical test at end point. Review of final electrical test result confirms that AOD406/AOD406L
passes AOS quality and reliability requirements. The released product will be categorized by the
process family and be monitored on a quarterly basis for continuously improving the product
quality.
Table of Contents:
I.
II.
III.
IV.
V.
Product Description
Package and Die information
Environmental Stress Test Summary and Result
Reliability Evaluation
Quality Assurance Information
I. Product Description:
AOD406 / AOD406L, a n channel MOSFET, is ideally suited for used as a low side switch in CPU
core power conversion. The device uses the advanced trench technology to provide excellent
Rdson, shoot-through immunity and body diode characteristics.
Absolute Maximum Ratings T A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±12
V
TA=25°C
Continuous Drain
A
Current
TA=100°C
Pulsed Drain Current
B
Power Dissipation
Junction and Storage
Temperature Range
ID
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-toAmbient
Maximum Junction-toAmbient
Maximum Junction-to-Lead
200
100
PD
W
50
TJ , TSTG
-55 to 175
Symbol
t = 10s
SteadyState
SteadyState
A
75
IDM
TA=25°C
A
85
RθJA
RθJL
°C
Typ
Max
Units
14.2
20
°C/W
40
50
°C/W
0.8
1.5
°C/W
2
II. Die / Package Information:
Die Size
Process
Package Type
Lead Frame
Die Attach
Bondwire
Mold Material
Filler % (Spherical/Flake)
Flammability Rating
Backside Metallization
Moisture Level
AOD406
140 X 83 mils
Standard sub-micron
low voltage N channel process
3 lead TO252
Copper with Solder Plate
Silver-filled Epoxy
5 & 8 mils Al wire
Epoxy resin with silica filler
50/50
UL-94 V-0
Ti / N / Ag
Up to Level 1 *
AOD406L (Green Compound)
140 X83 mils
Standard sub-micron
low voltage N channel process
3 lead TO252
Copper with Solder Plate
Silver-filled Epoxy
5 & 8 mils Al wire
Epoxy resin with silica filler
100/0
UL-94 V-0
Ti / N / Ag
Up to Level 1*
Note * based on info provided by assembler and mold compound supplier
III. Result of Reliability Stress for AOD406 (Standard) & AOD406L (Green)
Test Item
HTGB
Test Condition
Temp = 150 C,
Vgs=100% of
Vgsmax
Time Point
Lot Attribution
Total
Sample size
168 / 500
hrs
AOD406: 4 lots
328 pcs
0
(note A*)
1000 hrs
HTRB
Temp = 150 C,
Vds=80% of
Vdsmax
168 / 500
hrs
1000 hrs
HAST
Pressure Pot
Temperature
Cycle
130 +/- 2 C, 85%,
33.3 psi, Vgs =
80% of Vgs max
121 C, 15+/-1
PSIG, RH=100%
-65 to 150 deg C,
air to air, 0.5hr per
cycle
Number of
Failures
100 hrs
96 hrs
250 / 500
cycles
77+5 pcs / lot
AOD406: 3 lots
246 pcs
0
(note A*)
Standard compound:
1 lot
Green compound:
3 lots
(note B**)
Standard compound:
1 lot
Green compound:
3 lots **
(note B**)
Standard compound:
1 lot
Green compound:
3 lots **
(note B**)
77+5 pcs / lot
220 pcs
(3 lots)
0
50+5 pcs / lot
220 pcs
(3 lots)
1
50+5 pcs / lot
220 pcs
(3 lots)
0
50+5 pcs / lot
3
III. Result of Reliability Stress for AOD406 (Standard) & AOD406L (Green),
Cotinues
Internal Vision
Cross-section
X-ray
DPA
CSAM
NA
5
5
5
5
5
5
0
NA
5
5
0
Bond Integrity
Room Temp
150°C bake
150°C bake
0hr
250hr
500hr
40
40
40
40 wires
40 wires
40 wires
0
Solderability
230°C
5 sec
15
15 leads
0
0hr
10
10
0
3500V
10 pcs each from
AOD406 and AOD406L
Die Shear
ESD Rating
Human Body Mode
MIL-STD 883D
Method 3025.7
20 pcs
0
Note A: The HTGB and HTRB reliability data presents total of available AOD406 and AOD406L
burn-in data up to the published date.
Note B: The pressure pot, temperature cycle and HAST reliability data for AOD406L comes from
the AOS generic green compound package qualification data.
IV. Reliability Evaluation
FIT rate (per billion): 36.3
MTBF = 3144 years
500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years of lifetime at 55
deg C operating conditions (by applying the Arrhenius equation with an activation energy of 0.7eV
and 60% of upper confidence level on the failure rate calculation). AOS reliability group also
routinely monitors the product reliability up to 1000 hr at and performs the necessary failure
analysis on the units failed for reliability test(s).
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size of the selected product (AO3401). Failure Rate Determination is based on JEDEC
Standard JESD 85. FIT means one failure per billion hours.
2
9
Failure Rate = Chi x 10
/ [2 (N) (H) (Af)] = 1.83 x 109 / [2 (574) (168) (258.24)] = 36.3
9
MTBF = 10 / 36.3 = 27548209 hours = 3144 years
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55C)
V. Quality Assurance Information
4
Acceptable Quality Level for outgoing inspection: 0.1% for electrical and visual.
Guaranteed Outgoing Defect Rate: < 25 ppm
Quality Sample Plan: conform to Mil-Std-105D
Contacts:
Jackey Wang
Fred Chang,
Wilson Ma,
Engineer of Failure Analysis and Reliability
[email protected]
Manager of Failure Analysis and Reliability
[email protected]
Senior Director of Quality Assurance
[email protected]
5
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