datasheet for ACE4409BFM+H by Ace Technology Co. Ltd

datasheet for ACE4409BFM+H by Ace Technology Co. Ltd
ACE4409B
P-Channel Enhancement Mode Field Effect Transistor
Description
The ACE4409B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate
charge. This device is suitable for use as a load switch or in PWM applications.
Features




VDS(V)=-30V
ID=-14A (VGS=-10V)
RDS(ON)<11mΩ (VGS=-10V)
RDS(ON)<13mΩ (VGS=-4.5V)
Absolute Maximum Ratings
Parameter
Symbol
Max
Unit
Drain-Source Voltage
VDS
-30
V
VGS
±20
V
Gate-Source Voltage
O
Drain Current (Continuous) * AC
TA=25 C
O
TA=70 C
Drain Current (Pulse) * B
ID
IDM
O
Power Dissipation
TA=25 C
O
TA=70 C
Operating and Storage Temperature Range
PD
-14
-11
A
-70
3
2.1
TJ,TSTG -55 to 150
W
O
C
Packaging Type
SOP-8
Ordering information
ACE4409B XX + H
Halogen - free
Pb - free
FM : SOP-8
VER 1.2
1
ACE4409B
P-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics
O
TA=25 C unless otherwise noted
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V, ID=-250uA
-30
V
Zero Gate Voltage Drain Current
IDSS
VDS=-30V, VGS=0V
-1
uA
Gate Leakage Current
IGSS
VGS=±20V, VDS=0V
100
nA
Static Drain-Source On-Resistance
RDS(ON)
Gate Threshold Voltage
VGS(th)
VDS=VGS, IDS=-250µA
Forward Transconductance
gFS
VGS=-5V, ID=-15A
50
Diode Forward Voltage
Maximum Body-Diode Continuous
Current
VSD
ISD=-1A, VGS=0V
-0.71
VGS=-10V, ID=-15A
8
11
VGS=-4.5V, ID=-10A
10
13
-1.3
-2
-1
IS
mΩ
V
S
-1
V
-2.7
A
Switching
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
Td(on)
Turn-On Rise Time
tf
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
VDS=-15V, ID=-15A
VGS=-10V
VDS=-15V, RL=15Ω,
VGS=-10V, RGEN=6Ω
37.08
48.2
10.12
13.16
11.24
14.61
19.52
39.04
10.12
20.34
137.6
275.2
55.32
110.64
nC
ns
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=-15V, VGS=0V
f=1MHz
3887.7
577.33
pF
42.72
Note: 1. The value of R θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with TA=25°C. The value in any given application depends on the user's specific board design.
2. Repetitive rating, pulse width limited by junction temperature.
3. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
VER 1.2
2
ACE4409B
P-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
3
ACE4409B
P-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
4
ACE4409B
P-Channel Enhancement Mode Field Effect Transistor
Packing Information
SOP-8
Unit: mm
VER 1.2
5
ACE4409B
P-Channel Enhancement Mode Field Effect Transistor
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2
6
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