datasheet for IPB80N06S2L

datasheet for IPB80N06S2L
IPB80N06S2L-07
IPP80N06S2L-07
OptiMOS® Power-Transistor
Product Summary
Features
• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
V DS
55
V
R DS(on),max (SMD version)
6.7
mΩ
ID
80
A
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
PG-TO263-3-2
• Green package (lead free)
PG-TO220-3-1
• Ultra low Rds(on)
• 100% Avalanche tested
Type
Package
Ordering Code
Marking
IPB80N06S2L-07
PG-TO263-3-2
SP0002-18867
2N06L07
IPP80N06S2L-07
PG-TO220-3-1
SP0002-18831
2N06L07
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
Conditions
T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Value
80
Unit
A
80
Pulsed drain current2)
I D,pulse
T C=25 °C
320
Avalanche energy, single pulse2)
E AS
I D= 80 A
450
mJ
Gate source voltage4)
V GS
±20
V
Power dissipation
P tot
210
W
Operating and storage temperature
T j, T stg
-55 ... +175
°C
Rev. 1.0
T C=25 °C
page 1
2005-12-27
IPB80N06S2L-07
IPP80N06S2L-07
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
-
-
0.7
Thermal resistance, junction ambient, leaded
R thJA
-
-
62
SMD version, device on PCB
R thJA
minimal footprint
-
-
62
6 cm2 cooling area5)
-
-
40
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
55
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=150 µA
1.2
1.6
2.0
Zero gate voltage drain current
I DSS
V DS=55 V, V GS=0 V,
T j=25 °C
-
0.01
1
-
1
100
V DS=55 V, V GS=0 V,
T j=125 °C2)
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=60 A
-
7.1
10
mΩ
V GS=4.5 V, I D=60 A,
SMD version
-
6.8
9.7
V GS=10 V, I D=60 A,
-
5.6
7.0
V GS=10 V, I D=60 A,
SMD version
-
5.3
6.7
Drain-source on-state resistance
Rev. 1.0
RDS(on)
page 2
mΩ
2005-12-27
IPB80N06S2L-07
IPP80N06S2L-07
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
3160
-
-
740
-
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
210
-
Turn-on delay time
t d(on)
-
18
-
Rise time
tr
-
35
-
Turn-off delay time
t d(off)
-
28
-
Fall time
tf
-
31
-
Gate to source charge
Q gs
-
11
14
Gate to drain charge
Q gd
-
32
48
Gate charge total
Qg
-
95
130
Gate plateau voltage
V plateau
-
3.5
-
V
-
-
80
A
-
-
320
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=30 V, V GS=10 V,
I D=80 A, R G=2 Ω
pF
ns
Gate Charge Characteristics2)
V DD=44 V, I D=80 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continous forward current2)
IS
Diode pulse current2)
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=80 A,
T j=25 °C
-
0.9
1.3
V
Reverse recovery time2)
t rr
V R=30 V, I F=I S,
di F/dt =100 A/µs
-
59
75
ns
Reverse recovery charge2)
Q rr
-
80
100
nC
T C=25 °C
1)
Current is limited by bondwire; with an R thJC = 0.7 K/W the chip is able to carry 121 A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2)
Defined by design. Not subject to production test.
3)
See diagram 13
4)
Qualified at -20V and +20V.
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2005-12-27
IPB80N06S2L-07
IPP80N06S2L-07
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 4 V
I D = f(T C); V GS ≥ 10 V
100
200
80
150
60
I D [A]
P tot [W]
250
100
40
50
20
0
0
0
50
100
150
200
0
50
T C [°C]
100
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
100
0.5
1 µs
10 µs
100
10-1
100 µs
I D [A]
Z thJC [K/W]
1 ms
0.05
10-2
10
0.1
0.01
single pulse
10-3
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
V DS [V]
Rev. 1.0
10-7
page 4
2005-12-27
IPB80N06S2L-07
IPP80N06S2L-07
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C
R DS(on) = (I D); T j = 25 °C
parameter: V GS
parameter: V GS
300
16
10 V
3.5 V
3V
14
250
12
4V
R DS(on) [mΩ]
I D [A]
200
150
10
4V
8
4.5 V
3.5 V
100
6
10 V
50
4
3V
2.5 V
0
0
2
4
2
6
8
10
0
20
40
60
80
100
120
I D [A]
V DS [V]
7 Typ. transfer characteristics
8 Typ. Forward transconductance
I D = f(V GS); V DS = 6V
g fs = f(I D); T j = 25°C
parameter: T j
parameter: g fs
200
250
180
160
200
140
150
g fs [S]
I D [A]
120
100
80
100
60
40
50
175 °C
20
25 °C
-55 °C
0
0
1
2
3
4
Rev. 1.0
0
50
100
150
200
I D [A]
V GS [V]
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2005-12-27
IPB80N06S2L-07
IPP80N06S2L-07
10 Typ. gate threshold voltage
R DS(ON) = f(T j)
V GS(th) = f(T j); V GS = V DS
parameter: I D = 80 A; VGS = 10 V
parameter: I D
12
2.5
10
2
8
1.5
750 µA
V GS(th) [V]
R DS(on) [mΩ]
9 Typ. Drain-source on-state resistance
6
4
150 µA
1
0.5
2
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Typical forward diode characteristicis
C = f(V DS); V GS = 0 V; f = 1 MHz
IF = f(VSD)
parameter: T j
104
103
Ciss
I F [A]
C [pF]
102
Coss
103
175 °C
101
25 °C
Crss
102
100
0
5
10
15
20
25
30
V DS [V]
Rev. 1.0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD [V]
page 6
2005-12-27
IPB80N06S2L-07
IPP80N06S2L-07
13 Typical avalanche energy
14 Typ. gate charge
E AS = f(T j)
V GS = f(Q gate); I D = 80 A pulsed
parameter: I D
800
12
50 A
700
11 V 44 V
10
600
60 A
8
500
V GS [V]
E AS [mJ]
80 A
400
6
300
4
200
2
100
0
0
0
50
100
150
200
0
20
40
T j [°C]
60
80
100
120
Q gate [nC]
15 Typ. drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS) = f(T j); I D = 1 mA
66
64
V GS
Qg
62
V BR(DSS) [V]
60
58
56
54
52
50
Q gate
48
Q gs
Q gd
46
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.0
page 7
2005-12-27
IPB80N06S2L-07
IPP80N06S2L-07
Published by
Infineon Technologies AG
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies Office (www.infineon.com)
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies Office.
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2005-12-27
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