AOC2417 20V P-Channel MOSFET General Description Product Summary

AOC2417 20V P-Channel MOSFET General Description Product Summary
AOC2417
20V P-Channel MOSFET
General Description
Product Summary
The AOC2417 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V while retaining a 12V
VGS(MAX) rating.
VDS
ID (at VGS=-10V)
-20V
-3.5A
RDS(ON) (at VGS=-10V)
< 32mΩ
RDS(ON) (at VGS=-4.5V)
< 38mΩ
RDS(ON) (at VGS=-2.5V)
< 50mΩ
Typical ESD protection
AlphaDFN 1.57x1.57_4
Top View
HBM Class 2
D
Bottom View
Top View
Bottom View
3
2
D
D
S
G
G
Pin1(G)
4
1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Source Current (DC) Note1
TA=25°C
Source Current (Pulse) Note2
TA=25°C
Power Dissipation Note1
Junction and Storage Temperature Range
VGS
ID
Rev.1.0 : December 2013
±12
V
A
-50
TJ, TSTG
www.aosmd.com
Units
V
-3.5
IDM
PD
Thermal Characteristics
Parameter
Symbol
t ≤ 10s
Maximum Junction-to-Ambient A
RθJA
Maximum Junction-to-Ambient A D Steady-State
Note 1. Mounted on minimum pad PCB
Note 2. PW <300 µs pulses, duty cycle 0.5% max
Maximum
-20
Typ
140
190
0.55
W
-55 to 150
°C
Max
170
230
Units
°C/W
°C/W
Page 1 of 6
AOC2417
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-20
-1
TJ=55°C
Gate-Body leakage current
VDS=0V, VGS=±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
TJ=125°C
VGS=-4.5V, ID=-1A
Total Gate Charge
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Qrr
mΩ
mΩ
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Qgs
32
44
50
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Qg(4.5V)
26
36
37
IS=-1A,VGS=0V
Gate resistance
V
12
Diode Forward Voltage
Rg
µA
mΩ
VSD
Reverse Transfer Capacitance
±10
-1.4
38
VDS=-5V, ID=-1.5A
Crss
-0.98
µA
29
Forward Transconductance
Output Capacitance
Units
VGS=-2.5V, ID=-1A
gFS
Coss
-5
-0.6
VGS=-10V, ID=-1.5A
Static Drain-Source On-Resistance
Max
V
VDS=-20V, VGS=0V
IGSS
RDS(ON)
Typ
VGS=-10V, VDS=-10V, ID=-1.5A
-0.68
S
-1
V
1355
pF
225
pF
150
pF
15
Ω
28
40
14
20
nC
nC
2.5
nC
Gate Drain Charge
4
nC
Turn-On DelayTime
7
ns
VGS=-10V, VDS=-10V,
RL=6.67Ω, RGEN=3Ω
6
ns
190
ns
Turn-Off Fall Time
60
ns
IF=-1.5A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-1.5A, dI/dt=100A/µs
20
ns
nC
6
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0 : December 2013
www.aosmd.com
Page 2 of 6
AOC2417
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
-10V
60
-4.5V
50
VDS=-5V
50
-3.0V
40
-2.5V
-ID(A)
-ID (A)
40
30
30
20
20
-2.0V
125°C
10
10
25°C
VGS=-1.5V
0
0
0
1
2
3
4
0
5
50
2
3
4
Normalized On-Resistance
1.6
VGS=-2.5V
40
RDS(ON) (mΩ
Ω)
1
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
VGS=-4.5V
30
VGS=-10V
20
VGS=-10V
ID=-1.5A
1.4
VGS=-4.5V
ID=-1A
1.2
VGS=-2.5V
ID=-1A
1
0.8
10
0
1
0
2
3
4
5
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
60
1.0E+01
ID=-1.5A
1.0E+00
50
1.0E-01
-IS (A)
RDS(ON) (mΩ
Ω)
125°C
40
125°C
1.0E-02
30
1.0E-03
25°C
20
25°C
1.0E-04
1.0E-05
10
0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0 : December 2013
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOC2417
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2500
VDS=-10V
ID=-1.5A
2000
Capacitance (pF)
-VGS (Volts)
8
6
4
1000
2
500
0
0
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
Ciss
1500
30
Coss
Crss
0
5
10
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
50
100.0
TJ(Max)=150°C
TA=25°C
10µs
40
Power (W)
100µs
RDS(ON)
limited
10.0
-ID (Amps)
20
1ms
1.0
10ms
TJ(Max)=150°C
TA=25°C
0.1
30
20
10
10s
DC
0
0.0
0.00001
0.01
0.1
1
-VDS (Volts)
10
0.001
0.1
10
1000
100
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area
Figure 10: Single Pulse Power Rating Junction-toAmbient
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=230°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Rev.1.0 : December 2013
www.aosmd.com
Page 4 of 6
AOC2417
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D iode R ecovery T est C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
V ds -
Isd
V gs
Ig
Rev.1.0 : December 2013
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
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Page 5 of 6
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