datasheet for R1150H+VD by Ricoh
R1 1 5 0 H SERI ES
VOLTAGE REGULATOR (with Wide Input Voltage Range) with RESET
NO.EA-081-111027
OUTLINE
The R1150H series are CMOS-based voltage regulator (VR) ICs equipped with a voltage detector (VDET). VR
function of the R1150Hxxxx has features of low dropout voltage, high output voltage accuracy, and ultra-low
supply current. Each of the R1150HxxxA series includes also a chip enable circuit. The output of built-in voltage
detector is Nch open drain type. The R1150HxxxC/D have a pin for connecting external capacitor to set a certain
reset delay time instead of chip enable control pin.
The regulator output voltage and the detector threshold voltage are fixed in the IC, Output Voltage Accuracy is
±2.0%, while Detector Threshold Accuracy is ±2.5%. The R1150HxxxA (with chip enable function) and
R1150HxxxC series can supervise input voltage by the built-in detector. R1150HxxxB can supervise SENSE pin
voltage by the built-in detector. R1150HxxxD type can supervise VOUT voltage, or Regulator Output Voltage of this
IC itself.
Since the package for these ICs is the SOT-89-5 package, high density mounting of the ICs on boards is
possible.
FEATURES
• Supply Current ..................................................Typ. 7.0μA
• Input Voltage .....................................................Max. 24.0V
• Output Voltage (VR)..........................................2.1V to 14.0V (0.1V steps)
(For other voltages, please refer to MARK INFORMATIONS.)
• Detector Threshold Voltage (VDET) ....................2.0V to 15.0V (R1150HxxxB/C/D)
2.3V to 15.0V (R1150HxxxA)
• Output Voltage Accuracy...................................±2.0% (VR), ±2.5% (VD)
• Output Current ..................................................Min. 150mA (VOUT=5.0V)
• Package ............................................................SOT-89-5
• Built-in Fold-Back Protection Circuit .................Typ. 45mA (Current at short mode)
• Built-in Thermal Shutdown Circuit (VR) ............Thermal Shutdown Temperature ; Typ. 150°C
Released Temperature ; Typ. 120°C
• Monitoring VDD voltage ......................................R1150HxxxA/C
• Monitoring sense pin (SENSE) voltage ............R1150HxxxB
• Monitoring VOUT pin voltage...............................R1150HxxxD
APPLICATIONS
• Power source and Reset circuit for cameras, videos and mobile telecommunication equipment.
• Power source and Reset circuit for battery-operated equipment.
• Power source and Reset circuit for home appliances.
1
R1150H
BLOCK DIAGRAMS
R1150HxxxA
With CE pin, VIN detect
VDD
R1150HxxxB
With SENSE pin
1 VOUT
5
VDD
1 VOUT
5
Vref
Vref
Thermal
Shutdown
CE
Thermal
Shutdown
Current Limit
2 GND
3
Current Limit
SENSE 3
2 GND
4 VDET
4 VDET
Vref
Vref
R1150HxxxC
With CD pin, VIN detect
R1150HxxxD
With CD pin, VOUT detect
1 VOUT
VDD 5
1 VOUT
VDD 5
Vref
Vref
Thermal
Shutdown
Thermal
Shutdown
Current Limit
2 GND
CD 3
2 GND
CD 3
4 VDET
Vref
2
Current Limit
4 VDET
Vref
R1150H
SELECTION GUIDE
The output voltage, detector threshold and the usage of pin No.3 (as a kind of types in the R1150H Series ) for
the ICs can be selected at the user’s request.
Product Name
R1150Hxxx∗-T1-FE
Package
Quantity per Reel
Pb Free
Halogen Free
SOT-89-5
1,000 pcs
Yes
Yes
xxx : Specify a combination of output voltage and detector threshold.
∗
: Designation of the usage of pin No.3 and detector function;
(A) with CE pin and VIN detect
(B) with SENSE pin
(C) with CD pin and VIN detect
(D) with CD pin and VOUT detect
PIN CONFIGURATION
SOT-89-5
5
1
4
2
3
PIN DESCRIPTION
Pin No.
Symbol
Description
1
VOUT
Voltage Regulator Output Pin
2
GND
Ground Pin
CE
3
SENSE
CD
Chip Enable Pin (A Ver.)
Sense Pin for Voltage Detector (B Ver.)
Pin for Capacitor for Setting Output Delay of Voltage Detector (C/D Ver.)
4
VDET
Voltage Detector Output Pin
5
VDD
Input Pin
3
R1150H
ABSOLUTE MAXIMUM RATINGS
Symbol
Item
Rating
Unit
26.0
V
VIN
Input Voltage
VCE
Input Voltage (CE Input Pin, A Version)
−0.3 to VIN+0.3
V
Input Voltage (SENSE Input Pin, B Version)
−0.3 to VIN+0.3
V
VCD
Input Voltage (CD Input Pin, C/D Version)
−0.3 to VIN+0.3
V
VDET
Output Voltage (VDET Output Pin)
−0.3 to 26.0
V
VOUT
Output Voltage
−0.3 to VIN+0.3
V
IOUT1
Output Current (VR)
250
mA
IOUT2
Output Current (VD)
10
mA
900
mW
VSENSE
PD
Power Dissipation (SOT-89-5)
∗
Topt
Operating Temperature
−40 to 85
°C
Tstg
Storage Temperature
−55 to 125
°C
∗) For Power Dissipation, please refer to PACKAGE INFORMATION.
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the
permanent damages and may degrade the life time and safety for both device and system using the device
in the field.
The functional operation at or over these absolute maximum ratings is not assured.
4
R1150H
ELECTRICAL CHARACTERISTICS
•
R1150HxxxA
Symbol
Topt=25°C
Item
Conditions
VIN
Input Voltage
ISS
Supply Current
VIN=VCE
VOUT ≥ (-VDET): VIN=VOUT+2.0V
VOUT < (-VDET): VIN=(-VDET)+2.0V
Istandby
Standby Current
VDD=24V, VCE=0V
TTSD
TTSR
VR
Symbol
Thermal Shutdown
Temperature
Thermal Shutdown
Released Temperature
7
Max.
Unit
24.0
V
14
μA
Refer to Supply Current Table
150
°C
Junction Temperature
120
°C
Topt=25°C
Item
Conditions
Output Voltage
VIN=VOUT+2.0V, IOUT=20mA
IOUT1
Output Current
VIN=VOUT+2.0V
VIN=VOUT+2.0V
1mA ≤ IOUT ≤ 40mA
VIN=VOUT+2.0V, IOUT=20 mA
VOUT+1V ≤ VIN ≤ 24V
ΔVOUT/ΔIOUT
Load Regulation
ΔVOUT/ΔVIN
Line Regulation
VDIF
Dropout Voltage
IOUT=20mA
Output Voltage
Temperature Coefficient
VIN=VOUT+2.0V, IOUT=20mA
−40°C ≤ Topt ≤ 85°C
Short Current Limit
VOUT=0V
ISC
Typ.
Junction Temperature
VOUT
ΔVOUT/ΔTopt
Min.
Min.
Typ.
×0.98
Max.
Unit
×1.02
V
Refer to Output Current Table
Refer to Load Regulation Table
0.05
0.15
%/V
Refer to Dropout Voltage Table
±100
ppm/°C
45
mA
VCEH
CE "H" Input Voltage
1.5
VIN
V
VCEL
CE "L" Input Voltage
0
0.25
V
VD
Symbol
Topt=25°C
Item
Conditions
Min.
-VDET
Detector Threshold
×0.975
VHYS
Detector Threshold
Hysteresis
-VDET
×0.03
IOUT2
VDDL
Δ-VDET/ΔTopt
tPLH
Output Current
(Driver Output Pin)
Minimum Operating
Voltage
Detector Threshold
Temperature Coefficient
Refer to Test Conditions for
Output Current Table
*Note 1
Output Delay Time
*Note 2
−40°C ≤ Topt ≤ 85°C
Typ.
-VDET
×0.05
Max.
Unit
×1.025
V
-VDET
×0.07
V
0.17
mA
0.9
1.2
±100
0.5
V
ppm/°C
1.0
ms
Note 1) This item means VDD Voltage when Output Voltage is equal or less than 0.1V.
(Pull-up Resistor=470kW, Pull up Voltage=5V)
Note 2) VDET pin is pulled up to VDD via 470kW. tPLH means time interval from rising edge of VDD from
(-VDET)−2.0V to (-VDET)+2.0V to the point of Output Voltage being 80% of pull-up voltage.
5
R1150H
•
Standby Current (Topt=25°C)
Supply Current (µA)
Detector Threshold Voltage
-VDET (V)
Typ.
Max.
2.3V ≤ (-VDET) ≤ 3.0V
2.5
5.0
3.1V ≤ (-VDET) ≤ 15.0V
3.0
6.0
VR part
Output Current (Topt=25°C)
•
Output Voltage VOUT (V)
•
Min.
Typ.
2.1V ≤ VOUT ≤ 2.9V
90
140
3.0V ≤ VOUT ≤ 4.0V
120
170
4.1V ≤ VOUT ≤ 14.0V
150
200
Load Regulation (Topt=25°C)
Output Voltage VOUT (V)
•
Output Current (mA)
Load Regulation (mV)
Typ.
Max.
2.1V ≤ VOUT ≤ 3.0V
15
35
3.1V ≤ VOUT ≤ 5.0V
25
45
5.1V ≤ VOUT ≤ 10.0V
40
65
10.1V ≤ VOUT ≤ 14.0V
50
80
Dropout Voltage (Topt=25°C)
Output Voltage VOUT (V)
Dropout Voltage (V)
Typ.
Max.
2.1V ≤ VOUT ≤ 2.4V
0.40
0.60
2.5V ≤ VOUT ≤ 3.0V
0.30
0.40
3.1V ≤ VOUT ≤ 7.0V
0.25
0.35
7.1V ≤ VOUT ≤ 10.0V
0.27
0.45
10.1V ≤ VOUT ≤ 14.0V
0.30
0.50
VD part
Test Conditions for Output Current
•
Detector Threshold Voltage
-VDET (V)
Conditions
2.3V ≤ (-VDET) ≤ 15.0V
VIN=2V, VDS=0.05V
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue
to operate over the recommended operating conditions.
6
R1150H
•
R1150HxxxB
Symbol
VIN
ISS
TTSD
TTSR
VR
Symbol
Topt=25°C
Item
Conditions
Supply Current
Thermal Shutdown
Temperature
Thermal Shutdown
Temperature
VOUT≥ (-VDET):
VIN=SENSE=VOUT+2.0V
VOUT < (-VDET):
VIN=SENSE=(-VDET)+2.0V
V
14
µA
Junction Temperature
120
°C
Topt=25°C
Item
Conditions
Output Current
VIN=VOUT+2.0V
VIN=VOUT+2.0V
1mA ≤ IOUT ≤ 40mA
IOUT=20mA
VOUT+1V ≤ VIN ≤ 24V
ΔVOUT/ΔIOUT
Load Regulation
ΔVOUT/ΔVIN
Line Regulation
VDIF
Dropout Voltage
IOUT=20mA
Output Voltage
Temperature Coefficient
VIN=VOUT+2.0V
IOUT=20mA
−40°C ≤ Topt ≤ 85°C
Short Current Limit
VOUT=0V
Min.
Typ.
×0.98
Max.
Unit
×1.02
V
Refer to Output Current Table
Refer to Load Regulation Table
0.05
0.15
%/V
Refer to Dropout Voltage Table
±100
ppm/°C
45
mA
Topt=25°C
Item
Conditions
Min.
-VDET
Detector Threshold
×0.975
VHYS
Detector Threshold
Hysteresis
-VDET
×0.03
IOUT2
Output Current
(Driver Output Pin)
VDDL
Minimum Operating Voltage *Note 1
tPLH
24.0
°C
IOUT1
Δ-VDET/ΔTopt
Unit
150
VIN=VOUT+2.0V
IOUT=20mA
VD
Symbol
7
Max.
Junction Temperature
Output Voltage
ISC
Typ.
Input Voltage
VOUT
ΔVOUT/ΔTopt
Min.
Refer to Test Conditions for
Output Current Table
Detector Threshold
Temperature Coefficient
−40°C ≤ Topt ≤ 85°C
Output Delay Time
*Note 2
Typ.
-VDET
×0.05
Max.
Unit
×1.025
V
-VDET
×0.07
V
0.17
mA
0.9
1.2
±100
1.0
V
ppm/°C
1.5
ms
Note 1) This item means VDD Voltage when Output Voltage is equal or less than 0.1V.
(Pull-up Resistor=470kW, Pull up Voltage=5V)
Note 2) VDET pin is pulled up to VDD via 470kW. tPLH means time interval from rising edge of VDD from
(-VDET)−2.0V to (-VDET)+2.0V to the point of Output Voltage being 80% of pull-up voltage.
7
R1150H
•
Output Current (Topt=25°C)
Output Voltage VOUT (V)
Output Current (mA)
Min.
Typ.
2.1V ≤ VOUT ≤ 2.9V
90
140
3.0V ≤ VOUT ≤ 4.0V
120
170
4.1V ≤ VOUT ≤ 14.0V
150
200
VR part
Load Regulation (Topt=25°C)
•
Output Voltage VOUT (V)
•
Load Regulation (mV)
Typ.
Max.
2.1V ≤ VOUT ≤ 3.0V
15
35
3.1V ≤ VOUT ≤ 5.0V
25
45
5.1V ≤ VOUT ≤ 10.0V
40
65
10.1V ≤ VOUT ≤ 14.0V
50
80
Dropout Voltage (Topt=25°C)
Output Voltage VOUT (V)
Dropout Voltage (V)
Typ.
Max.
2.1V ≤ VOUT ≤ 2.4V
0.40
0.60
2.5V ≤ VOUT ≤ 3.0V
0.30
0.40
3.1V ≤ VOUT ≤ 7.0V
0.25
0.35
7.1V ≤ VOUT ≤ 10.0V
0.27
0.45
10.1V ≤ VOUT ≤ 14.0V
0.30
0.50
VD part
• Test Conditions for Output Current
Detector Threshold Voltage
-VDET (V)
Conditions
2.1V ≤ (-VDET) ≤ 15.0V
VIN=2V, VDS=0.05V
(-VDET)=2.0
VIN=1.9V, VDS=0.05V
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue
to operate over the recommended operating conditions.
8
R1150H
•
R1150HxxxC
Symbol
Topt=25°C
Item
VIN
Input Voltage
ISS
Supply Current
TTSD
TTSR
VR
Symbol
Thermal Shutdown
Temperature
Thermal Shutdown
Released Temperature
Conditions
VOUT ≥ (-VDET):VIN=VOUT+2.0V
VOUT < (-VDET):VIN=(-VDET)+2.0V
V
14
µA
120
°C
Topt=25°C
Item
Conditions
Output Current
VIN=VOUT+2.0V
VIN=VOUT+2.0V
1mA ≤ IOUT ≤ 40mA
IOUT=20mA
VOUT+1V ≤ VIN ≤ 24V
ΔVOUT/ΔIOUT
Load Regulation
ΔVOUT/ΔVIN
Line Regulation
VDIF
Dropout Voltage
IOUT=20mA
Output Voltage
Temperature Coefficient
VIN=VOUT+2.0V
IOUT=20mA
−40°C ≤ Topt ≤ 85°C
Short Current Limit
VOUT=0V
Min.
Typ.
×0.98
Max.
Unit
×1.02
V
Refer to Output Current Table
Refer to Load Regulation Table
0.05
0.15
%/V
Refer to Dropout Voltage Table
±100
ppm/°C
45
mA
Topt=25°C
Item
Conditions
Min.
-VDET
Detector Threshold
×0.975
VHYS
Detector Threshold
Hysteresis
-VDET
×0.03
IOUT2
Output Current
(Driver Output Pin)
VDDL
Minimum Operating Voltage *Note 1
tPLH
24.0
Junction Temperature
IOUT1
Δ-VDET/ΔTopt
Unit
°C
VIN=VOUT+2.0V
IOUT=20mA
VD
Symbol
7
Max.
150
Output Voltage
ISC
Typ.
Junction Temperature
VOUT
ΔVOUT/ΔTopt
Min.
Refer to Test Conditions for
Output Current Table
Detector Threshold
Temperature Coefficient
−40°C ≤ Topt ≤ 85°C
Output Delay Time
CD=4.7nF, *Note 2
Typ.
-VDET
×0.05
Max.
Unit
×1.025
V
-VDET
×0.07
V
0.17
mA
0.9
1.2
±100
20
30
V
ppm/°C
50
ms
Note 1) This item means VDD Voltage when Output Voltage is equal or less than 0.1V.
(Pull-up Resistor=470kW, Pull up Voltage=5V)
Note 2) VDET pin is pulled up to VDD via 470kW. tPLH means time interval from rising edge of VDD from
(-VDET)−2.0V to (-VDET)+2.0V to the point of Output Voltage being 80% of pull-up voltage.
9
R1150H
•
Output Current (Topt=25°C)
Output Voltage VOUT (V)
•
Min.
Typ.
2.1V ≤ VOUT ≤ 2.9V
90
140
3.0V ≤ VOUT ≤ 4.0V
120
170
4.1V ≤ VOUT ≤ 14.0V
150
200
Load Regulation (Topt=25°C)
Output Voltage VOUT (V)
•
Load Regulation (mV)
Typ.
Max.
2.1V ≤ VOUT ≤ 3.0V
15
35
3.1V ≤ VOUT ≤ 5.0V
25
45
5.1V ≤ VOUT ≤ 10.0V
40
65
10.1V ≤ VOUT ≤ 14.0V
50
80
Dropout Voltage (Topt=25°C)
Output Voltage VOUT (V)
•
Output Current (mA)
Dropout Voltage (V)
Typ.
Max.
2.1V ≤ VOUT ≤ 2.4V
0.40
0.60
2.5V ≤ VOUT ≤ 3.0V
0.30
0.40
3.1V ≤ VOUT ≤ 7.0V
0.25
0.35
7.1V ≤ VOUT ≤ 10.0V
0.27
0.45
10.1V ≤ VOUT ≤ 14.0V
0.30
0.50
Test Conditions for Output Current
Detector Threshold Voltage
-VDET (V)
Conditions
2.1V ≤ (-VDET) ≤ 15.0V
VIN=2V, VDS=0.05V
(-VDET)=2.0
VIN=1.9V, VDS=0.05V
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue
to operate over the recommended operating conditions.
10
R1150H
•
R1150HxxxD
Symbol
Topt=25°C
Item
VIN
Input Voltage
ISS
Supply Current
TSD
TSR
VR
Symbol
Thermal Shutdown
Temperature
Thermal Shutdown
Released Temperature
Conditions
VIN=VOUT+2.0V
Item
Conditions
Output Voltage
IOUT
Output Current
VIN=VOUT+2.0V
VIN=VOUT+2.0V
1mA ≤ IOUT ≤ 40mA
IOUT=20mA
VOUT+1V ≤ VIN ≤ 24V
ΔVOUT/ΔIOUT
Load Regulation
ΔVOUT/ΔVIN
Line Regulation
VDIF
Dropout Voltage
IOUT=20mA
Output Voltage
Temperature Coefficient
VIN=VOUT+2.0V
IOUT=20mA
−40°C ≤ Topt ≤ 85°C
Short Current Limit
VOUT=0V
VD
Symbol
Min.
14
µA
°C
120
°C
Typ.
0.05
Max.
Unit
×1.02
V
0.15
%/V
Refer to Dropout Voltage Table
±100
ppm/°C
45
mA
Topt=25°C
Item
Conditions
Min.
VHYS
Detector Threshold
Hysteresis
-VDET
×0.03
tPLH
V
Refer to Load Regulation Table
×0.975
Δ-VDET/ΔTopt
24.0
Refer to Output Current Table
Detector Threshold
VDDL
Unit
150
×0.98
-VDET
IOUT2
Max.
Topt=25°C
VOUT
ISC
Typ.
7
Junction Temperature
VIN=VOUT+2.0V
IOUT=20mA
ΔVOUT/ΔTopt
Min.
Output Current
(Driver Output Pin)
Minimum Operating
Voltage
Detector Threshold
Temperature Coefficient
Refer to Test Conditions for
Output Current Table
*Note 1
Output Delay Time
CD=4.7nF, *Note 2
20
Release Margin
VOUT−0.2−(-VDET)−VHYS
50
Typ.
-VDET
×0.05
Max.
Unit
×1.025
V
-VDET
×0.07
V
0.17
mA
0.9
−40°C ≤ Topt ≤ 85°C
1.2
±100
30
V
ppm/°C
50
ms
mV
Note 1) This item means VDD Voltage when Output Voltage is equal or less than 0.1V.
(Pull-up Resistor=470kW, Pull up Voltage=5V)
Note 2) VDET pin is pulled up to VDD via 470kW. tPLH means time interval from rising edge of VDD from
(-VDET)−2.0V to (-VDET)+2.0V to the point of Output Voltage being 80% of pull-up voltage.
11
R1150H
•
Output Current (Topt=25°C)
Output Voltage VOUT (V)
•
Min.
Typ.
2.1V ≤ VOUT ≤ 2.9V
90
140
3.0V ≤ VOUT ≤ 4.0V
120
170
4.1V ≤ VOUT ≤ 14.0V
150
200
Load Regulation (Topt=25°C)
Output Voltage VOUT (V)
•
Load Regulation (mV)
Typ.
Max.
2.1V ≤ VOUT ≤ 3.0V
15
35
3.1V ≤ VOUT ≤ 5.0V
25
45
5.1V ≤ VOUT ≤ 10.0V
40
65
10.1V ≤ VOUT ≤ 14.0V
50
80
Dropout Voltage (Topt=25°C)
Output Voltage VOUT (V)
•
Output Current (mA)
Dropout Voltage (V)
Typ.
Max.
2.1V ≤ VOUT ≤ 2.4V
0.40
0.60
2.5V ≤ VOUT ≤ 3.0V
0.30
0.40
3.1V ≤ VOUT ≤ 7.0V
0.25
0.35
7.1V ≤ VOUT ≤ 10.0V
0.27
0.45
10.1V ≤ VOUT ≤ 14.0V
0.30
0.50
Test Conditions for Output Current
Detector Threshold Voltage
-VDET (V)
Conditions
2.1V ≤ (-VDET) ≤ 15.0V
VIN=2V, VDS=0.05V
(-VDET)=2.0
VIN=1.9V, VDS=0.05V
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue
to operate over the recommended operating conditions.
12
R1150H
TEST CIRCUITS
•
R1150HxxxA
470kΩ
5
VDET 4
VDD
5
R1150HxxxA
SERIES
3
1
3
2
CIN
VIN
R1150HxxxA
SERIES
IOUT
GND VOUT
CE
COUT
VDET 4
VDD
VIN
GND VOUT 1
CE
2
CIN
COUT
CIN=0.1µF, COUT=1µF
CIN=0.1µF, COUT=1µF
Standard Test Circuit
Supply Current Test Circuit
5
5
VDD
R1150HxxxA
SERIES
R1150HxxxA
SERIES
3
P.G.
CE
IOUT
GND VOUT 1
3
VIN
2
VIN
VDET 4
VDD
VDET 4
IOUT
GND VOUT 1
CE
2
CIN
COUT
COUT
I1
CIN=0.1µF, COUT=1µF
CIN=0.1µF, COUT=1µF
Input Transient Response/
Ripple Rejection Test Circuit
5
VDET
VDD
3
VIN
CIN
CE
GND VOUT
2
Load Transient Response Test Circuit
4
5
R1150HxxxA
SERIES
I2
1
3
CIN=0.1µF
Minimum Operating Voltage Test Circuit
4
R1150HxxxA
SERIES
470kΩ
5V
VDET
VDD
2V
CIN
CE
GND VOUT
2
1
0.05V
CIN=0.1µF
VD Output Current Test Circuit
13
R1150H
•
R1150HxxxB
470kΩ
5
VDET
VDD
4
R1150HxxxB
SERIES
SENSE
3
VOUT
SENSE
3
VIN2
VOUT
VIN1 CIN
CIN=0.1µF, COUT=1µF
CIN=0.1µF, COUT=1µF
Supply Current Test Circuit
5
VDET
P.G.
VIN1
VIN2
VDET 4
VDD
4
R1150HxxxB
SERIES
R1150HxxxB
SERIES
3
COUT
2
Standard Test Circuit
VDD
1
GND
2
5
4
R1150HxxxB
SERIES
1
COUT
VDET
VDD
IOUT
GND
VIN1 CIN
VIN2
5
IOUT
VOUT
SENSE
GND
3
1
VIN2
VOUT 1
SENSE
GND
VIN1 CIN
2
COUT
2
IOUT
COUT
I1
CIN=0.1µF, COUT=1µF
CIN=0.1µF, COUT=1µF
Input Transient Response/
Ripple Rejection Test Circuit
5
VDET
VDD
3
VIN
CIN
VOUT
SENSE
GND
Load Transient Response Test Circuit
4
5
R1150HxxxB
SERIES
1
3
5V
VDET
VDD
4
R1150HxxxB
SERIES
470kΩ
2
2V
CIN
VOUT
SENSE
GND
1
0.05V
2
CIN=0.1µF
VDET Minimum Operating Voltage Test Circuit
14
I2
CIN=0.1µF
VD Output Current Test Circuit
R1150H
•
R1150HxxxC/D
470kΩ
5
VDET
VDD
4
5
R1150HxxxC/D
SERIES
3
CD
VIN CIN
CD
VOUT
1
CD
3
VOUT
VIN CIN
COUT
CIN=0.1µF, COUT=1µF
CIN=0.1µF, COUT=1µF
Supply Current Test Circuit
5
VDET
P.G.
VIN
VOUT
CD
4
R1150HxxxC/D
SERIES
IOUT
3
GND VOUT
CD
1
IOUT
1
2
GND
CD
VDET
VDD
4
R1150HxxxC/D
SERIES
3
COUT
2
Standard Test Circuit
VDD
1
GND
2
5
4
R1150HxxxC/D
SERIES
IOUT
GND
VDET
VDD
COUT
2
VIN
CIN
COUT
I1
CIN=0.1µF, COUT=1µF
CIN=0.1µF, COUT=1µF
Input Transient Response/
Ripple Rejection Test Circuit
5
VDET
VDD
3
CD
VIN
CIN
CD
GND VOUT
2
Load Transient Response Test Circuit
4
5
R1150HxxxC/D
SERIES
I2
4
R1150HxxxC/D
SERIES
470kΩ
1
3
5V
VDET
VDD
CD
2V
CIN
CD
GND VOUT
2
1
0.05V
CIN=0.1µF
VDET Minimum Operating Voltage Test Circuit
CIN=0.1µF
VD Output Current Test Circuit
15
R1150H
TYPICAL CHARACTERISTICS
1) Output Voltage vs. Temperature
R1150H (VR=3.0V)
R1150H (VR=5.0V)
5.10
Output Voltage VOUT(V)
Output Voltage VOUT(V)
3.06
3.03
3.00
2.97
2.94
-50
0
50
5.05
5.00
4.95
4.90
-50
100
Temperature Topt(°C)
0
50
100
Temperature Topt(°C)
R1150H (VR=10.0V)
Output Voltage VOUT(V)
10.2
10.1
10.0
9.9
9.8
-50
0
50
100
Temperature Topt(°C)
2) Output Voltage vs. Input Voltage
R1150H (VR=3.0V)
R1150H (VR=5.0V)
Topt=25°C
Topt=25°C
6.0
Output Voltage VOUT(V)
Output Voltage VOUT(V)
4.0
3.5
IOUT=1mA
3.0
IOUT=20mA
2.5
5.5
IOUT=1mA
5.0
IOUT=20mA
4.5
IOUT=40mA
IOUT=40mA
2.0
4.0
0
5
10
15
Input Voltage VIN(V)
16
20
25
0
5
10
15
Input Voltage VIN(V)
20
25
R1150H
R1150H (VR=10.0V)
Topt=25°C
Output Voltage VOUT(V)
11.0
10.5
IOUT=1mA
IOUT=20mA
10.0
IOUT=40mA
9.5
9.0
0
5
10
15
20
25
Input Voltage VIN(V)
3) Output Voltage vs. Output Current
R1150H (VR=3.0V)
R1150H (VR=5.0V)
Topt=25°C
Topt=25°C
6.0
3.0
Output Voltage VOUT(V)
Output Voltage VOUT(V)
3.5
VIN=5V
2.5
VIN=4V
2.0
1.5
1.0
0.5
0.0
VIN=7V
5.0
4.0
3.0
VIN=6V
2.0
1.0
0.0
0
100
200
300
Output Current IOUT(mA)
0
100
200
300
Output Current IOUT(mA)
R1150H (VR=10.0V)
Topt=25°C
Output Voltage VOUT(V)
12
VIN=12V
10
8
VIN=11V
6
4
2
0
0
100
200
300
Output Current IOUT(mA)
17
R1150H
4) Dropout Voltage vs. Output Current
R1150H (VR=3.0V)
R1150H (VR=5.0V)
3.0
Dropout Voltage VDIF(V)
Dropout Voltage VDIF(V)
3.0
2.5
2.0
85°C
1.5
25°C
1.0
-40°C
0.5
0.0
2.5
2.0
85°C
1.5
25°C
1.0
-40°C
0.5
0.0
0
30
60
90
120
0
Output Current IOUT(mA)
30
60
90
120
150
Output Current IOUT(mA)
R1150H (VR=10.0V)
Dropout Voltage VDIF(V)
3.0
2.5
2.0
85°C
1.5
25°C
1.0
-40°C
0.5
0.0
0
30
60
90
120
150
Output Current IOUT(mA)
5) Supply Current vs. Input Voltage
R1150H (VR=3.0V)
R1150H (VR=5.0V)
Topt=25°C
Topt=25°C
10
Supply Current ISS(µA)
Supply Current ISS(µA)
10
8
6
4
2
6
4
2
0
0
0
5
10
15
Input Voltage VIN(V)
18
8
20
25
0
5
10
15
20
Input Voltage VIN(V)
25
R1150H
R1150H (VR=10.0V)
Topt=25°C
Supply Current ISS(µA)
10
8
6
4
2
0
0
5
10
15
20
25
Input Voltage VIN(V)
6) Supply Current vs. Temperature
R1150H (VR=3.0V, VDET=2.5V)
R1150H (VR=5.0V, VDET=4.5V)
10
Supply Current ISS(µA)
Supply Current ISS(µA)
10
8
6
4
2
0
-50
0
50
100
Temperature Topt(°C)
8
6
4
2
0
-50
0
50
100
Temperature Topt(°C)
R1150H (VR=10.0V, VDET=11.0V)
Supply Current ISS(µA)
10
8
6
4
2
0
-50
0
50
100
Temperature Topt(°C)
19
R1150H
7) Ripple Rejection vs. Frequency
R1150H (VR=5.0V)
Topt=25°C
VIN=5.0VDC+0.5Vp-p, IOUT=20mA, COUT=1µF
80
Topt=25°C
VIN=7.0VDC+0.5Vp-p, IOUT=20mA, COUT=1µF
80
70
70
Ripple Rejection RR(dB)
Ripple Rejection RR(dB)
R1150H (VR=3.0V)
60
50
40
30
20
10
0
0.01
0.1
1
10
100
Frequency f(kHz)
Ripple Rejection RR(dB)
Topt=25°C
VIN=12.0VDC+0.5Vp-p, IOUT=20mA, COUT=1µF
80
70
60
50
40
30
20
10
0.1
1
10
Frequency f(kHz)
20
50
40
30
20
10
0
0.01
0.1
1
10
Frequency f(kHz)
R1150H (VR=10.0V)
0
0.01
60
100
100
R1150H
8) Input Transient Response
R1150H (VR=3.0V)
20
3.3
15
Input Voltage
3.2
10
3.1
5
Output Voltage
3.0
0
2.9
-5
2.8
0
40
80
120
160
Input Voltage VIN(V)
Output Voltage VOUT(V)
IOUT=20mA, COUT=1µF
3.4
-10
200
Time T(ms)
R1150H (VR=5.0V)
IOUT=20mA, COUT=1µF
20
5.3
15
Input Voltage
5.2
10
5.1
5
Output Voltage
5.0
0
4.9
-5
4.8
0
40
80
120
160
Input Voltage VIN(V)
Output Voltage VOUT(V)
5.4
-10
200
Time T(ms)
R1150H (VR=10.0V)
IOUT=20mA, COUT=1µF
25
10.8
20
Input Voltage
10.6
15
10
10.4
10.2
5
Output Voltage
10.0
0
9.8
-5
9.6
0
40
80
120
160
Input Voltage VIN(V)
Output Voltage VOUT(V)
11.0
-10
200
Time T(ms)
21
R1150H
9) Load Transient Response
R1150H (VR=3.0V)
30
Output Voltage VOUT (V)
20mA
20
Output Current
10
1mA
4.0
0
3.5
Output Voltage
3.0
Output Current IOUT (mA)
Topt=25°C
VIN=5.0V, COUT=1µF
2.5
0
5
10
15
20
25
30
Time T (ms)
R1150H (VR=5.0V)
30
Output Voltage VOUT (V)
20mA
20
Output Current
10
1mA
0
5.4
Output Voltage
5.0
Output Current IOUT (mA)
Topt=25°C
VIN=7.0V, COUT=1µF
4.6
0
5
10
15
20
25
30
Time T (ms)
R1150H (VR=10.0V)
30
Output Voltage VOUT (V)
20mA
20
Output Current
10
1mA
0
10.5
Output Voltage
10.0
9.5
0
5
10
15
Time T (ms)
22
20
25
30
Output Current IOUT (mA)
Topt=25°C
VIN=12.0V, COUT=1µF
R1150H
10) Detector Threshold vs. Temperature
R1150H (-VDET=4.5V)
R1150H (-VDET=11.0V)
4.8
11.8
+VDET
Input Voltage VIN(V)
Input Voltage VIN(V)
+VDET
4.7
4.6
-VDET
4.5
4.4
-50
0
50
11.6
11.4
11.2
-VDET
11.0
10.8
-50
100
0
Temperature Topt(°C)
50
100
Temperature Topt(°C)
11) Detector Threshold vs. Input Voltage
R1150H (-VDET=4.5V)
R1150H (-VDET=4.5V)
Pull up to VIN
Pull up to 5V
6
Output Voltage VDOUT(V)
Output Voltage VDOUT(V)
6
5
4
3
-40°C
25°C
2
1
5
85°C
4
25°C
3
-40°C
2
1
85°C
0
0
0
1
2
3
4
0
5
1
Input Voltage VIN(V)
2
3
5
Input Voltage VIN(V)
R1150H (-VDET=11.0V)
R1150H (-VDET=11.0V)
Pull up to VIN
Pull up to 5V
6
Output Voltage VDOUT(V)
14
Output Voltage VDOUT(V)
4
12
10
8
6
-40°C
4
25°C
2
5
4
85°C
3
25°C
2
-40°C
1
85°C
0
0
0
2
4
6
8
Input Voltage VIN(V)
10
12
0
2
4
6
8
10
12
Input Voltage VIN(V)
23
R1150H
12) Nch Driver Output Current vs. VDS
R1150H (-VDET=4.5V)
R1150H (-VDET=11.0V)
60
16
Output Current IOUT(mA)
Output Current IOUT(mA)
18
VIN=4.0V
14
3.5V
12
10
3.0V
8
6
2.5V
4
2.0V
2
1.5V
0
0
1
2
VIN=10V
50
9.0V
8.0V
7.0V
40
30
6.0V
5.0V
20
4.0V
10
3.0V
2.0V
0
3
4
5
6
0
2
4
VDS(V)
6
8
10
12
14
VDS(V)
13) Nch Driver Output Current vs. Input Voltage
R1150H (-VDET=4.5V)
R1150H (-VDET=11.0V)
60
Output Current IOUT(mA)
Output Current IOUT(mA)
30
25
-40°C
20
15
25°C
10
85°C
5
0
1
2
3
4
5
Input Voltage VIN(V)
25°C
30
85°C
20
10
R1150H (-VDET=4.5V)
30
25
20
15
10
5
0
-50
0
50
Temperature Topt(°C)
0
3
6
9
Input Voltage VIN(V)
14) Detector Output Delay Time vs. Temperature
Detector Output Delay Time
tpHL(µs)
40
0
0
24
-40°C
50
100
12
R1150H
15) Thermal Shutdown Temperature vs. Output Voltage
R1150H (VR=5.0V)
VIN=10V, IOUT=1mA
Output Voltage VOUT(V)
8
7
6
5
4
3
2
1
0
0
20 40 60 80 100 120 140 160 180
Junction Temperature Tjct(°C)
16) Output Delay Time vs. Temperature
R1150H (-VDET=4.5V)
Output Delay Time tpLH(ms)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-50
0
50
100
Temperature Topt(°C)
17) CD pin Threshold Voltage vs. Temperature
R1150H (VDET=9.0V)
CD pin Threshold Voltage VTCD(V)
CD pin Threshold Voltage VTCD(V)
R1150H (VDET=4.0V)
1.4
1.3
L→H
1.2
1.1
H→L
1.0
0.9
-50
0
50
Temperature Topt(°C)
100
1.4
1.3
L→H
1.2
1.1
H→L
1.0
0.9
-50
0
50
100
Temperature Topt(°C)
25
R1150H
18) CD pin Sink Current vs. Input Voltage
R1150H (VDET=4.0V)
R1150HxxxD (VDET=9.0V)
100
CD pin Sink Current ICD(µA)
CD pin Sink Current ICD(µA)
100
80
-40°C
60
25°C
40
85°C
20
0
-40°C
80
60
25°C
85°C
40
20
0
0
1
2
3
4
5
0
2
Input Voltage VIN(V)
4
6
8
10
Input Voltage VIN(V)
R1150H (VDET=15.0V)
CD pin Sink Current ICD(µA)
100
Topt=-40°C
80
25°C
60
85°C
40
20
0
0
2
4
6
8
10 12 14 16 18 20
Input Voltage VIN(V)
19) CD pin Sink Current vs. VDS
R1150H (VDET=4.0V)
R1150H (VDET=9.0V)
VDD=3.5V
1.2
1.0
VDD=3.0V
0.8
0.6
VDD=2.5V
0.4
VDD=2.0V
0.2
VDD=1.5V
0.0
0.0
1.0
2.0
3.0
Source-Drain Voltage VDS(V)
26
4.0
6.0
CD pin Sink Current ICD(mA)
CD pin Sink Current ICD(mA)
1.4
VDD=8.0V
5.0
VDD=7.0V
4.0
VDD=6.0V
3.0
VDD=5.0V
2.0
VDD=4.0V
1.0
VDD=3.0V
0.0
0.0
2.0
4.0
6.0
8.0
Source-Drain Voltage VDS(V)
10.0
R1150H
R1150H (VDET=15.0V)
CD pin Sink Current ICD(mA)
12.0
14.0V
10.0
8.0
6.0
4.0
2.0
0.0
0
VDD=14.5V
13.0V
12.0V
11.0V
10.0V
9.0V
8.0V
7.0V
6.0V
5.0V
4.0V
3.0V
2.0V
4
8
12
16
Source-Drain Voltage VDS(V)
20) Output Delay Time vs. External Capacitance
R1150H (VDET=4.0V)
Output Delay Time tp(ms)
1000
100
tpLH
10
1
tpHL
0.1
0.01
0.001
0.1
1
10
100
External Capacitance CD(nF)
21) tPLHdelay vs. Temperature
R1150HxxxD (VDET=4.0V)
R1150HxxxD (VDET=9.0V)
CD=4.7nF
40
40
35
35
tpLH (ms)
tpLH (ms)
CD=4.7nF
30
25
20
-50
30
25
0
50
Temperature Topt(°C)
100
20
-50
0
50
100
Temperature Topt(°C)
27
R1150H
TYPICAL APPLICATIONS
470kΩ
470kΩ
5
VDET
VDD
4
R1150HxxxA
SERIES
3
CE
GND VOUT
3
1
COUT
VDET
VDD
4
R1150HxxxB
SERIES
IOUT
2
VIN CIN
5
VIN2
VIN1 CIN
SENSE
VOUT
GND
IOUT
1
COUT
2
CIN=0.1µF, COUT=1µF
R1150HxxxA
R1150HxxxB
470kΩ
5
VDET
VDD
4
R1150HxxxC/D
SERIES
3
CD
VIN CIN
CD
VOUT
GND
IOUT
1
COUT
2
CIN=0.1µF, COUT=1µF
R1150HxxxC
TECHNICAL NOTES
Phase Compensation
Phase Compensation of the R1150H Series has been made internally for stable operation even though the
load current would vary. Therefore, without the capacitors, CIN and COUT, Output Voltage is regulated, but for
more stable operation, use 0.1µF or more capacitors as CIN and COUT. Wiring should be made as short as
possible.
PCB layout
Current flows into wiring for VDD or GND, thus, if the impedance of the wiring is rather high, it may cause of
making noise or unstable operation, thus width and pattern should be enough wide to avoid such problems.
Connect the capacitor, CIN between VDD pin and GND pin as close as possible.
About the output voltage and the detector threshold setting (In case of R1150HxxxD)
When the value difference between release voltage of voltage detector and the output voltage of voltage
regulator is little, the release function may not operate after detective, due to change the output voltage of
voltage detector. Pay attention for setting of the release voltage.
28
R1150H
Refer to the following formula for setting the voltage of output and detective value.
(VOUT × 0.975) − (-VDET × 1.10) > 0.2
Thermal Shutdown
Thermal shutdown function is included in the R1150HxxxA/B/C/D Series, when the junction temperature is
equal or more than +150°C (Typ.), the operation of regulator would stop. After that, when the junction
temperature is equal or less than +120°C (Typ.), the oper ation of regulator would restart. Unless the cause of
rising temperature would remove, the regulator repeats on and off, and output waveform would be like
consecutive pulses.
Chip Enable Circuit
Do not make voltage level of chip enable pin keep floating level, or in between VIH and VIL. Unless otherwise,
Output voltage would be unstable or indefinite, or unexpected current would flow internally.
Output Delay Time for Release VDET
In the R1150Hxx1C/D can set an output delay time for release voltage detector with connecting a capacitor to
CD pin. When an input voltage (in the case of R1150Hxx1C) or an output voltage (in the case of R1150Hxx1D)
surpasses the release voltage of its voltage detector (+VDET), the capacitor which is connected to CD pin is started
to be charged, as a result, CD pin voltage rises. When the CD pin voltage surpasses CD pin threshold voltage, the
output voltage of the voltage detector outputs “H”.
Released Voltage (+VDET)
Input Voltage or Output Voltage
CD Pin Threshold Voltage
CD Pin Voltage
GND
Output Voltage
GND
Output Delay Time (tpLH)
Output delay time for release voltage detector can be calculated with the next formula:
tPLH=1.25/200×109×CD (sec)
Input Transient Response
If the input transient speed is equal or faster than 80mV/μs and the transient level difference is equal or more
than 1.5V, the output response may be extremely worse than normal operation. In that case, add a capacitor
between VIN and GND, and make the transient speed of VIN slower than 80mV/µs.
29
1. The products and the product specifications described in this document are subject to change or
discontinuation of production without notice for reasons such as improvement. Therefore, before
deciding to use the products, please refer to Ricoh sales representatives for the latest
information thereon.
2. The materials in this document may not be copied or otherwise reproduced in whole or in part
without prior written consent of Ricoh.
3. Please be sure to take any necessary formalities under relevant laws or regulations before
exporting or otherwise taking out of your country the products or the technical information
described herein.
4. The technical information described in this document shows typical characteristics of and
example application circuits for the products. The release of such information is not to be
construed as a warranty of or a grant of license under Ricoh's or any third party's intellectual
property rights or any other rights.
5. The products listed in this document are intended and designed for use as general electronic
components in standard applications (office equipment, telecommunication equipment,
measuring instruments, consumer electronic products, amusement equipment etc.). Those
customers intending to use a product in an application requiring extreme quality and reliability,
for example, in a highly specific application where the failure or misoperation of the product
could result in human injury or death (aircraft, spacevehicle, nuclear reactor control system,
traffic control system, automotive and transportation equipment, combustion equipment, safety
devices, life support system etc.) should first contact us.
6. We are making our continuous effort to improve the quality and reliability of our products, but
semiconductor products are likely to fail with certain probability. In order to prevent any injury to
persons or damages to property resulting from such failure, customers should be careful enough
to incorporate safety measures in their design, such as redundancy feature, firecontainment
feature and fail-safe feature. We do not assume any liability or responsibility for any loss or
damage arising from misuse or inappropriate use of the products.
7. Anti-radiation design is not implemented in the products described in this document.
8. Please contact Ricoh sales representatives should you have any questions or comments
concerning the products or the technical information.
RICOH COMPANY., LTD. Electronic Devices Company
■Ricoh presented with the Japan Management Quality Award for 1999.
■Ricoh awarded ISO 14001 certification.
Ricoh continually strives to promote customer satisfaction, and shares the achievements
of its management quality improvement program with people and society.
The Ricoh Group was awarded ISO 14001 certification, which is an international standard for
environmental management systems, at both its domestic and overseas production facilities.
Our current aim is to obtain ISO 14001 certification for all of our business offices.
http://www.ricoh.com/LSI/
RICOH COMPANY, LTD.
Electronic Devices Company
● Higashi-Shinagawa Office (International Sales)
3-32-3, Higashi-Shinagawa, Shinagawa-ku, Tokyo 140-8655, Japan
Phone: +81-3-5479-2857 Fax: +81-3-5479-0502
RICOH EUROPE (NETHERLANDS) B.V.
● Semiconductor Support Centre
Prof. W.H.Keesomlaan 1, 1183 DL Amstelveen, The Netherlands
P.O.Box 114, 1180 AC Amstelveen
Phone: +31-20-5474-309 Fax: +31-20-5474-791
RICOH ELECTRONIC DEVICES KOREA Co., Ltd.
11 floor, Haesung 1 building, 942, Daechidong, Gangnamgu, Seoul, Korea
Phone: +82-2-2135-5700 Fax: +82-2-2135-5705
RICOH ELECTRONIC DEVICES SHANGHAI Co., Ltd.
Room403, No.2 Building, 690#Bi Bo Road, Pu Dong New district, Shanghai 201203,
People's Republic of China
Phone: +86-21-5027-3200 Fax: +86-21-5027-3299
RICOH COMPANY, LTD.
Electronic Devices Company
● Taipei office
Room109, 10F-1, No.51, Hengyang Rd., Taipei City, Taiwan (R.O.C.)
Phone: +886-2-2313-1621/1622 Fax: +886-2-2313-1623
Ricoh completed the organization of the Lead-free production for all of our products.
After Apr. 1, 2006, we will ship out the lead free products only. Thus, all products that
will be shipped from now on comply with RoHS Directive.
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