2SB857 2SB858

2SB857 2SB858
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2SB857, 2SB858
Silicon PNP Triple Diffused
ADE-208-859 (Z)
1st. Edition
September 2000
Application
Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134
Outline
TO-220AB
1
1. Base
2. Collector
(Flange)
3. Emitter
2 3
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
2SB857
2SB858
Unit
Collector to base voltage
VCBO
–70
–70
V
Collector to emitter voltage
VCEO
–50
–60
V
Emitter to base voltage
VEBO
–5
–5
V
Collector current
IC
–4
–4
A
Collector peak current
I C(peak)
–8
–8
A
40
40
W
1
Collector power dissipation
PC *
Junction temperature
Tj
150
150
°C
Storage temperature
Tstg
–45 to +150
–45 to +150
°C
Note:
1. Value at TC = 25°C
2SB857, 2SB858
Electrical Characteristics (Ta = 25°C)
2SB857
2SB858
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V(BR)CBO
–70
—
—
–70
—
—
V
I C = –10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
–50
—
—
–60
—
—
V
I C = –50 mA, RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO
–5
—
—
–5
—
—
V
I E = –10 µA, IC = 0
Collector cutoff current
I CBO
—
—
–1
—
—
–1
µA
VCB = –50 V, IE = 0
60
—
320
60
—
320
VCE =
I C = –1 A*2
hFE2
35
—
—
35
—
—
–4 V
I C = –0.1 A*2
VCE(sat)
—
—
–1
—
—
–1
V
I C = –2 A, IB = –0.2 A*2
Base to emitter voltage VBE
—
—
–1
—
—
–1
V
VCE = –4 V, IC = –1 A*2
Gain bandwidth product f T
—
15
—
—
15
—
MHz
VCE = –4 V,
I C = –0.5 A*2
DC current transfer ratio hFE1*
Collector to emitter
saturation voltage
1
Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows.
2. Pulse test
B
C
D
60 to 120
100 to 200
160 to 320
Maximum Collector Dissipation Curve
Area of Safe Operation
(–10 V, –4 A)
D
C
O
pe
ra
tio
(–20 V, –2 A)
n
40
TC = 25°C
–1.0
–0.5
50
100
Case Temperature TC (°C)
150
–0.05
–1
A)
–0.1
.15
(–50 V, –0.24 A)
–0.2
, –0
20
–2
0V
Collector Current IC (A)
IC max (Continuous)
0
2
–5
(–6
Collector power dissipation Pc (W)
60
2SB857
2SB858
–2
–5 –10 –20
–50 –100
Collector to emitter Voltage VCE (V)
2SB857, 2SB858
Typical Transfer Characteristics
Typical Output Characteristics
–5
VCE = –4 V
–2
–30
–2
–20
–10 mA
–1
Collector to Emitter Saturation
Voltage vs. Collector Current
VCE = –4 V
100
25
50
Collector to emitter saturation voltage
VCE (sat) (V)
DC current transfer ratio hFE
1,000
TC = 75°C
–25
20
10
5
–0.01–0.02 –0.05–0.1 –0.2 –0.5 –1.0 –2
Collector current IC (A)
–0.05
0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4
Base to emitter voltage VBE (V)
DC Current Transfer Ratio vs.
Collector Current
200
–0.1
–0.01
–2
–4
–6
–8
–10
Collector to emitter Voltage VCE (V)
500
–0.2
–0.02
IB = 0
0
–0.5
TC = 75
°C
–40
–3
–1.0
25
–25
Collector current IC (A)
Collector Current IC (A)
–4
–70
–60
–50
0W
=4
Pc
TC = 25°C
–5
–4
–1.4
–1.2
–1.0
IC = 10 IB
TC = 75°C
25
–0.8
–25
–0.6
–0.4
–0.2
0
–0.01–0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2
Collector current IC (A)
–5
3
2SB857, 2SB858
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
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4
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